JPH10506755A - エンハンストドリフト領域を備える高電圧横型ｄｍｏｓデバイス - Google Patents

エンハンストドリフト領域を備える高電圧横型ｄｍｏｓデバイス

Info

Publication number
JPH10506755A
JPH10506755A JP8511865A JP51186596A JPH10506755A JP H10506755 A JPH10506755 A JP H10506755A JP 8511865 A JP8511865 A JP 8511865A JP 51186596 A JP51186596 A JP 51186596A JP H10506755 A JPH10506755 A JP H10506755A
Authority
JP
Japan
Prior art keywords
region
transistor
regions
conductivity type
dopant concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8511865A
Other languages
English (en)
Japanese (ja)
Inventor
アール． シン，マイケル
イー． ガーネット，マーティン
シー． モイヤー，ジェイムズ
ジェイ． オルター，マーティン
アール． リフティン，ヘルムート
Original Assignee
マイクレル，インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26978899&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH10506755(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US08/313,471 external-priority patent/US5447876A/en
Application filed by マイクレル，インコーポレーテッド filed Critical マイクレル，インコーポレーテッド
Publication of JPH10506755A publication Critical patent/JPH10506755A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H10W20/484—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP8511865A 1994-09-27 1995-09-25 エンハンストドリフト領域を備える高電圧横型ｄｍｏｓデバイス Pending JPH10506755A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08/313,471 US5447876A (en) 1993-11-19 1994-09-27 Method of making a diamond shaped gate mesh for cellular MOS transistor array
US313,471 1994-09-27
US384,168 1995-02-06
US08/384,168 US5517046A (en) 1993-11-19 1995-02-06 High voltage lateral DMOS device with enhanced drift region
PCT/US1995/011959 WO1996010267A1 (en) 1994-09-27 1995-09-25 High voltage lateral dmos device with enhanced drift region

Publications (1)

Publication Number Publication Date
JPH10506755A true JPH10506755A (ja) 1998-06-30

Family

ID=26978899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8511865A Pending JPH10506755A (ja) 1994-09-27 1995-09-25 エンハンストドリフト領域を備える高電圧横型ｄｍｏｓデバイス

Country Status (6)

Country Link
US (1) US5517046A (OSRAM)
EP (1) EP0788659B1 (OSRAM)
JP (1) JPH10506755A (OSRAM)
AU (1) AU3593395A (OSRAM)
DE (1) DE69513680T2 (OSRAM)
WO (1) WO1996010267A1 (OSRAM)

Cited By (8)

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JP2003303961A (ja) * 2002-04-09 2003-10-24 Sanyo Electric Co Ltd Ｍｏｓ半導体装置
US6638827B2 (en) 2000-04-26 2003-10-28 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing it
JPWO2005029590A1 (ja) * 2003-09-18 2006-11-30 新電元工業株式会社 横型短チャネルｄｍｏｓ及びその製造方法並びに半導体装置
WO2009091840A3 (en) * 2008-01-14 2009-09-24 Volterra Semiconductor Corporation Power transistor with protected channel
JP2009239096A (ja) * 2008-03-27 2009-10-15 Renesas Technology Corp 半導体装置
JP2011508978A (ja) * 2007-12-28 2011-03-17 ヴォルテラ セミコンダクター コーポレイション 二重拡散型ソースｍｏｓｆｅｔ（ｌｄｍｏｓ）トランジスタの高ドープ領域及びその作製方法
JP2011103376A (ja) * 2009-11-11 2011-05-26 Renesas Electronics Corp 半導体装置及びその製造方法
JP2014209634A (ja) * 2007-03-28 2014-11-06 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ａｎａｌｏｇｉｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 絶縁分離された集積回路装置

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JP3387782B2 (ja) 1997-07-14 2003-03-17 松下電器産業株式会社 半導体装置
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US6093585A (en) * 1998-05-08 2000-07-25 Lsi Logic Corporation High voltage tolerant thin film transistor
US6252278B1 (en) * 1998-05-18 2001-06-26 Monolithic Power Systems, Inc. Self-aligned lateral DMOS with spacer drift region
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US6271552B1 (en) * 1999-10-04 2001-08-07 Xemod, Inc Lateral RF MOS device with improved breakdown voltage
US6784059B1 (en) * 1999-10-29 2004-08-31 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing thereof
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US6638827B2 (en) 2000-04-26 2003-10-28 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing it
US7087961B2 (en) 2000-04-26 2006-08-08 Sanyo Electric Co., Ltd. Semiconductor device with reduced on-state resistance
JP2003303961A (ja) * 2002-04-09 2003-10-24 Sanyo Electric Co Ltd Ｍｏｓ半導体装置
JPWO2005029590A1 (ja) * 2003-09-18 2006-11-30 新電元工業株式会社 横型短チャネルｄｍｏｓ及びその製造方法並びに半導体装置
JP2014209634A (ja) * 2007-03-28 2014-11-06 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ａｎａｌｏｇｉｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 絶縁分離された集積回路装置
JP2011508978A (ja) * 2007-12-28 2011-03-17 ヴォルテラ セミコンダクター コーポレイション 二重拡散型ソースｍｏｓｆｅｔ（ｌｄｍｏｓ）トランジスタの高ドープ領域及びその作製方法
WO2009091840A3 (en) * 2008-01-14 2009-09-24 Volterra Semiconductor Corporation Power transistor with protected channel
US8664728B2 (en) 2008-01-14 2014-03-04 Volterra Semiconductor Corporation Power transistor with protected channel
US9224603B2 (en) 2008-01-14 2015-12-29 Volterra Semiconductor LLC Method of fabricating power transistor with protected channel
JP2009239096A (ja) * 2008-03-27 2009-10-15 Renesas Technology Corp 半導体装置
JP2011103376A (ja) * 2009-11-11 2011-05-26 Renesas Electronics Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US5517046A (en) 1996-05-14
AU3593395A (en) 1996-04-19
DE69513680D1 (de) 2000-01-05
EP0788659A1 (en) 1997-08-13
WO1996010267A1 (en) 1996-04-04
EP0788659A4 (OSRAM) 1997-09-10
DE69513680T2 (de) 2000-05-11
EP0788659B1 (en) 1999-12-01

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