DE69513680T2 - Laterale hochspannungs-dmos-anordnung mit höherer driftzone - Google Patents

Laterale hochspannungs-dmos-anordnung mit höherer driftzone

Info

Publication number
DE69513680T2
DE69513680T2 DE69513680T DE69513680T DE69513680T2 DE 69513680 T2 DE69513680 T2 DE 69513680T2 DE 69513680 T DE69513680 T DE 69513680T DE 69513680 T DE69513680 T DE 69513680T DE 69513680 T2 DE69513680 T2 DE 69513680T2
Authority
DE
Germany
Prior art keywords
regions
dmos transistor
doping concentration
region
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513680T
Other languages
German (de)
English (en)
Other versions
DE69513680D1 (de
Inventor
Martin Alter
Martin Garnett
Michael Hsing
Helmuth Liftin
James Moyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
Original Assignee
Micrel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26978899&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69513680(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US08/313,471 external-priority patent/US5447876A/en
Application filed by Micrel Inc filed Critical Micrel Inc
Publication of DE69513680D1 publication Critical patent/DE69513680D1/de
Application granted granted Critical
Publication of DE69513680T2 publication Critical patent/DE69513680T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H10W20/484—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69513680T 1994-09-27 1995-09-25 Laterale hochspannungs-dmos-anordnung mit höherer driftzone Expired - Fee Related DE69513680T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/313,471 US5447876A (en) 1993-11-19 1994-09-27 Method of making a diamond shaped gate mesh for cellular MOS transistor array
US08/384,168 US5517046A (en) 1993-11-19 1995-02-06 High voltage lateral DMOS device with enhanced drift region
PCT/US1995/011959 WO1996010267A1 (en) 1994-09-27 1995-09-25 High voltage lateral dmos device with enhanced drift region

Publications (2)

Publication Number Publication Date
DE69513680D1 DE69513680D1 (de) 2000-01-05
DE69513680T2 true DE69513680T2 (de) 2000-05-11

Family

ID=26978899

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513680T Expired - Fee Related DE69513680T2 (de) 1994-09-27 1995-09-25 Laterale hochspannungs-dmos-anordnung mit höherer driftzone

Country Status (6)

Country Link
US (1) US5517046A (OSRAM)
EP (1) EP0788659B1 (OSRAM)
JP (1) JPH10506755A (OSRAM)
AU (1) AU3593395A (OSRAM)
DE (1) DE69513680T2 (OSRAM)
WO (1) WO1996010267A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7151318B2 (en) 2001-11-16 2006-12-19 Eupec Europaische Gesellschaft Fur Leistungshalbleiter Gmbh & Co. Kg Semiconductor component and method for contacting said semiconductor component

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US7151318B2 (en) 2001-11-16 2006-12-19 Eupec Europaische Gesellschaft Fur Leistungshalbleiter Gmbh & Co. Kg Semiconductor component and method for contacting said semiconductor component
US7462557B2 (en) 2001-11-16 2008-12-09 Infineon Technologies Ag Semiconductor component and method for contracting said semiconductor component
USRE47854E1 (en) 2001-11-16 2020-02-11 Infineon Technologies Ag Semiconductor component and method for contacting said semiconductor component

Also Published As

Publication number Publication date
JPH10506755A (ja) 1998-06-30
US5517046A (en) 1996-05-14
AU3593395A (en) 1996-04-19
DE69513680D1 (de) 2000-01-05
EP0788659A1 (en) 1997-08-13
WO1996010267A1 (en) 1996-04-04
EP0788659A4 (OSRAM) 1997-09-10
EP0788659B1 (en) 1999-12-01

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