JPH06268015A - 集積回路装置 - Google Patents
集積回路装置Info
- Publication number
- JPH06268015A JPH06268015A JP5049172A JP4917293A JPH06268015A JP H06268015 A JPH06268015 A JP H06268015A JP 5049172 A JP5049172 A JP 5049172A JP 4917293 A JP4917293 A JP 4917293A JP H06268015 A JPH06268015 A JP H06268015A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- integrated circuit
- semiconductor substrate
- columnar body
- package substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 229910000679 solder Inorganic materials 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 230000008018 melting Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
(57)【要約】
【目的】 長寿命を得ることのできる集積回路装置を提
供すること。 【構成】 半導体基体1とパッケージ用基板2とを電気
的に接続し、機械的に結合するはんだ微小柱状体3の内
部に金属製の芯4を設けた。
供すること。 【構成】 半導体基体1とパッケージ用基板2とを電気
的に接続し、機械的に結合するはんだ微小柱状体3の内
部に金属製の芯4を設けた。
Description
【0001】
【産業上の利用分野】本発明は、半導体集積回路のパッ
ケージ構造体に係り、特に、集積回路の半導体基体とパ
ッケージ用基板との電気的、機械的結合にはんだの微小
柱状体を用いた集積回路装置に関する。
ケージ構造体に係り、特に、集積回路の半導体基体とパ
ッケージ用基板との電気的、機械的結合にはんだの微小
柱状体を用いた集積回路装置に関する。
【0002】
【従来の技術】集積回路装置を完成させるためには、集
積回路が形成された半導体基体をパッケージ用基板に取
り付け、かつ、これらの間での電気的な接続を行なう必
要がある。
積回路が形成された半導体基体をパッケージ用基板に取
り付け、かつ、これらの間での電気的な接続を行なう必
要がある。
【0003】このような取付けと接続のための技法とし
ては、従来、種々の方法が提案され、実用に供されてい
るが、その中ではんだの微小柱状体を用い、半導体基体
とパッケージ用基板との電気的な結合と機械的な結合と
を同時に得るようにした方法がある。
ては、従来、種々の方法が提案され、実用に供されてい
るが、その中ではんだの微小柱状体を用い、半導体基体
とパッケージ用基板との電気的な結合と機械的な結合と
を同時に得るようにした方法がある。
【0004】この方法は、例えば図2に示す様に、半導
体基体1とパッケージ用基板2の相互に接続すべき端子
部5,6のうちの一方、例えば半導体基体1側の端子部
5に、あらかじめ約5〜40重量%の錫と95〜60重
量%の鉛を成分とするはんだ組成物を形成しておく。そ
して、半導体基体1とパッケージ用基板2とを所定の間
隔を隔てて面対向させた状態で加熱し、上記はんだ組成
物を溶融(リフロー)せしめ、双方の端子部間にはんだ
の微小柱状体3を形成せしめることにより端子部5,6
間での電気的接続と、半導体基体1とパッケージ用基板
2との間での機械的結合とが得られる。
体基体1とパッケージ用基板2の相互に接続すべき端子
部5,6のうちの一方、例えば半導体基体1側の端子部
5に、あらかじめ約5〜40重量%の錫と95〜60重
量%の鉛を成分とするはんだ組成物を形成しておく。そ
して、半導体基体1とパッケージ用基板2とを所定の間
隔を隔てて面対向させた状態で加熱し、上記はんだ組成
物を溶融(リフロー)せしめ、双方の端子部間にはんだ
の微小柱状体3を形成せしめることにより端子部5,6
間での電気的接続と、半導体基体1とパッケージ用基板
2との間での機械的結合とが得られる。
【0005】このようなはんだの微小柱状体による結合
方法によれば、電気的に接続すべき端子部が複数あって
も、これと無関係に、ただ一度の溶融処理で全て同時に
接続処理が完了し、かつ機械的な結合も同時に得られ
る。このため、接続端子数の多い集積回路装置に、近
年、この方法が広く採用されるようになってきた。
方法によれば、電気的に接続すべき端子部が複数あって
も、これと無関係に、ただ一度の溶融処理で全て同時に
接続処理が完了し、かつ機械的な結合も同時に得られ
る。このため、接続端子数の多い集積回路装置に、近
年、この方法が広く採用されるようになってきた。
【0006】これとは別に、集積回路の集積度も増加の
一途をたどり、特にLSIと呼ばれるものでは端子引出
数は数百本にも達するようになってきた。ところが、こ
のような端子引出数の多い半導体基体とパッケージ用基
板との接続に、上記のはんだ微小柱状体による方法を適
用すると、集積回路装置に故障が発生し易いという問題
点が生じるようになってきた。この故障は、主としては
んだ微小柱状体によって電気的に接続した半導体基体と
パッケージ用基板のそれぞれの端子部間での導通不良の
発生という形で現われる。これは、半導体基体とパッケ
ージ用基板との間での熱膨張係数の差に起因して、はん
だ微小柱状体に与えられる繰り返し応力の結果、この部
分が熱疲労により破壊し、電気的な断線に至るためであ
る。そこで、このような問題点の解決のため、従来、以
下に示すようないくつかの提案がなされている。
一途をたどり、特にLSIと呼ばれるものでは端子引出
数は数百本にも達するようになってきた。ところが、こ
のような端子引出数の多い半導体基体とパッケージ用基
板との接続に、上記のはんだ微小柱状体による方法を適
用すると、集積回路装置に故障が発生し易いという問題
点が生じるようになってきた。この故障は、主としては
んだ微小柱状体によって電気的に接続した半導体基体と
パッケージ用基板のそれぞれの端子部間での導通不良の
発生という形で現われる。これは、半導体基体とパッケ
ージ用基板との間での熱膨張係数の差に起因して、はん
だ微小柱状体に与えられる繰り返し応力の結果、この部
分が熱疲労により破壊し、電気的な断線に至るためであ
る。そこで、このような問題点の解決のため、従来、以
下に示すようないくつかの提案がなされている。
【0007】第1の方法は、ICチップ等の電気部品の
はんだバンプ形成面もしくは基板の導体面のいずれか一
方の面のはんだバンプとは干渉しない個所に、融点がは
んだ端子よりも高いペーストはんだをはんだ端子の高さ
よりも低く、かつ、1個のはんだバンプよりも多い量を
塗布しておく。そして、実装時には、はんだバンプのリ
フローに続いて上記ペーストはんだを融点以上に加熱し
て融解させた後、はんだ端子を硬化させることにより、
はんだバンプを引き延ばし、つづみ状に成形させる。こ
の第1の方法は、特公平2−206138号公報に示さ
れている。
はんだバンプ形成面もしくは基板の導体面のいずれか一
方の面のはんだバンプとは干渉しない個所に、融点がは
んだ端子よりも高いペーストはんだをはんだ端子の高さ
よりも低く、かつ、1個のはんだバンプよりも多い量を
塗布しておく。そして、実装時には、はんだバンプのリ
フローに続いて上記ペーストはんだを融点以上に加熱し
て融解させた後、はんだ端子を硬化させることにより、
はんだバンプを引き延ばし、つづみ状に成形させる。こ
の第1の方法は、特公平2−206138号公報に示さ
れている。
【0008】第2の方法は、特公昭61−156745
公報に示されており、この方法では、ICチップ裏面に
磁性体からなる部分を形成し、はんだリフローの際にI
Cチップを磁石により上方に吸引することにより、基板
に対するチップの高さを高くするようにしている。ま
た、特公昭62−013817公報に示された第3の方
法では、IC基板に設けられた電極部以外をマスクする
厚い絶縁体を形成し、電気メッキ、あるいは蒸着等によ
り、上記電極部にはんだバンプを形成し、IC基板側の
電極とセラミック基板側の電極とをはんだの融解により
接続した後、上記絶縁体を除去することにより、はんだ
バンプを細長く形成するようにしている。
公報に示されており、この方法では、ICチップ裏面に
磁性体からなる部分を形成し、はんだリフローの際にI
Cチップを磁石により上方に吸引することにより、基板
に対するチップの高さを高くするようにしている。ま
た、特公昭62−013817公報に示された第3の方
法では、IC基板に設けられた電極部以外をマスクする
厚い絶縁体を形成し、電気メッキ、あるいは蒸着等によ
り、上記電極部にはんだバンプを形成し、IC基板側の
電極とセラミック基板側の電極とをはんだの融解により
接続した後、上記絶縁体を除去することにより、はんだ
バンプを細長く形成するようにしている。
【0009】
【発明が解決しようとする課題】しかしながら、これら
の従来の技術では、半導体基体内の素子の集積度の向上
にともなって、チップが大型化され、熱膨張差の影響が
大きく現れる場合には熱疲労によるはんだ微小柱状体で
の断線故障を防止するには不十分であり、充分な長寿命
を得ることができないという問題点があった。
の従来の技術では、半導体基体内の素子の集積度の向上
にともなって、チップが大型化され、熱膨張差の影響が
大きく現れる場合には熱疲労によるはんだ微小柱状体で
の断線故障を防止するには不十分であり、充分な長寿命
を得ることができないという問題点があった。
【0010】本発明の課題は上記の問題点を解消して長
寿命を得ることのできる集積回路装置を提供することに
ある。
寿命を得ることのできる集積回路装置を提供することに
ある。
【0011】
【課題を解決するための手段】本発明による集積回路装
置は、半導体基体とパッケージ用基板とを電気的に接続
し、機械的に結合するはんだ微小柱状体の内部に金属製
の芯を設けたことを特徴とする。
置は、半導体基体とパッケージ用基板とを電気的に接続
し、機械的に結合するはんだ微小柱状体の内部に金属製
の芯を設けたことを特徴とする。
【0012】
【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の一実施例を示す断面図である。図1
において、1は半導体基体、2はパッケージ用基板、3
ははんだの微小柱状体、4は金属製の芯、5,6はそれ
ぞれ、半導体基体1、パッケージ用基板2の対向端面に
形成された端子部である。
る。図1は本発明の一実施例を示す断面図である。図1
において、1は半導体基体、2はパッケージ用基板、3
ははんだの微小柱状体、4は金属製の芯、5,6はそれ
ぞれ、半導体基体1、パッケージ用基板2の対向端面に
形成された端子部である。
【0013】半導体基体1は、例えば十数mm角の大き
さのシリコン基板に大型電子計算機用プロセッサを構成
する固体回路を形成してなるLSIチップで、その一方
の面に多数の端子部5がマトリクス状に配列してある。
さのシリコン基板に大型電子計算機用プロセッサを構成
する固体回路を形成してなるLSIチップで、その一方
の面に多数の端子部5がマトリクス状に配列してある。
【0014】パッケージ用基板2は、例えばアルミナを
母材として、表面に有機絶縁層8をもつ多層配線基板で
あり、半導体基体1に対向する面には、端子部5に対応
して相互に向い合う位置に端子部6がマトリクス状に配
列してある。
母材として、表面に有機絶縁層8をもつ多層配線基板で
あり、半導体基体1に対向する面には、端子部5に対応
して相互に向い合う位置に端子部6がマトリクス状に配
列してある。
【0015】端子部5は半導体基体1の面に形成した積
層金属層で、金属製の芯4との結合界面として機能す
る。同様に、端子部6は、パッケージ用基板2の表面に
形成した積層金属層で、はんだの微小柱状体3との結合
界面として機能する。
層金属層で、金属製の芯4との結合界面として機能す
る。同様に、端子部6は、パッケージ用基板2の表面に
形成した積層金属層で、はんだの微小柱状体3との結合
界面として機能する。
【0016】金属製の芯4は端子部5との間に供給され
た高融点はんだ7を加熱溶融させることにより電気的な
接続と機械的な結合とを行なう。
た高融点はんだ7を加熱溶融させることにより電気的な
接続と機械的な結合とを行なう。
【0017】はんだの微小柱状体3は端子部5,6の間
に、内部に金属製の芯4を有した状態で配置された上で
加熱溶融され、金属製の芯4と、端子部6との結合界面
で合金化したあとで常温に戻される。これにより、半導
体基体1とパッケージ用基板2との間での電気的な接続
と機械的な結合とを行なう。
に、内部に金属製の芯4を有した状態で配置された上で
加熱溶融され、金属製の芯4と、端子部6との結合界面
で合金化したあとで常温に戻される。これにより、半導
体基体1とパッケージ用基板2との間での電気的な接続
と機械的な結合とを行なう。
【0018】ここで、半導体基体1の端子部5と端子部
6と金属製の芯4は共に平面形状が円形をなし、それら
が数100μmの均一なピッチで相互に対応する位置に
配列されている。
6と金属製の芯4は共に平面形状が円形をなし、それら
が数100μmの均一なピッチで相互に対応する位置に
配列されている。
【0019】一方、はんだの微小柱状体3は、以下の様
にして形成される。まず、半導体基体1側の端子部5に
接続された金属製の芯4にあらかじめめっき法、蒸着法
などの周知の方法と、それに続く加熱、冷却処理によ
り、側面投影形状が内側にくぼんだつづみ形状になる様
なある一定の体積のはんだ量を供給して、はんだバンプ
を形成させる。その後、この半導体基体1をあらかじめ
水平に保ってあるパッケージ用基板2の上に載置し、端
子部5と6と金属製の芯4の互いに対応するものが正確
に向い合った状態で空気中でのフラックスを用いた加熱
処理、或いは水素、窒素、アルゴンなどの制御された雰
囲気中でのフラックスを用いない加熱処理によりはんだ
バンプの溶融と、それに続く常温への復帰処理が行なわ
れ、結合界面での合金化により金属製の芯4と端子部6
との間にはんだの微小柱状体3を形成する。
にして形成される。まず、半導体基体1側の端子部5に
接続された金属製の芯4にあらかじめめっき法、蒸着法
などの周知の方法と、それに続く加熱、冷却処理によ
り、側面投影形状が内側にくぼんだつづみ形状になる様
なある一定の体積のはんだ量を供給して、はんだバンプ
を形成させる。その後、この半導体基体1をあらかじめ
水平に保ってあるパッケージ用基板2の上に載置し、端
子部5と6と金属製の芯4の互いに対応するものが正確
に向い合った状態で空気中でのフラックスを用いた加熱
処理、或いは水素、窒素、アルゴンなどの制御された雰
囲気中でのフラックスを用いない加熱処理によりはんだ
バンプの溶融と、それに続く常温への復帰処理が行なわ
れ、結合界面での合金化により金属製の芯4と端子部6
との間にはんだの微小柱状体3を形成する。
【0020】図3は本発明の有効性を検証するために有
限要素法により応力シミュレーションを行った際のシミ
ュレーションモデルを示し、シミュレーションの結果、
図4に示すような結果が得られた。シミュレーションモ
デルにおいては、最外周バンプのみをモデル化し、シミ
ュレーションの条件としては、23℃で応力0、125
℃に温度上昇した時の応力を求めた。図中Max で示す箇
所は応力最大の箇所を示し、図2のような従来の場合の
応力を1とすると、本発明のようなはんだの微小柱状体
の側面投影形状(つづみ状)で芯無しの場合、0.62
となり、金属製の芯のみの場合、0.63であり、本発
明では0.51という値が得られた。
限要素法により応力シミュレーションを行った際のシミ
ュレーションモデルを示し、シミュレーションの結果、
図4に示すような結果が得られた。シミュレーションモ
デルにおいては、最外周バンプのみをモデル化し、シミ
ュレーションの条件としては、23℃で応力0、125
℃に温度上昇した時の応力を求めた。図中Max で示す箇
所は応力最大の箇所を示し、図2のような従来の場合の
応力を1とすると、本発明のようなはんだの微小柱状体
の側面投影形状(つづみ状)で芯無しの場合、0.62
となり、金属製の芯のみの場合、0.63であり、本発
明では0.51という値が得られた。
【0021】
【発明の効果】以上説明したように本発明は、半導体基
体とパッケージ用基板との間に設けられるはんだの微小
柱状体の内部に金属製の芯を有し、内側にくぼんだつづ
み状の側面投影形状になるようにしたので、単にはんだ
微小柱状体のみで半導体基体とパッケージ用基板とを接
続し、その側面投影形状を内側にくぼんだ側面投影形状
にした場合よりも、接続部に加わる応力が低減される。
また、半導体基体とパッケージ用基板との間を金属製の
芯のみで接続した場合よりも応力を低減させることがで
きる。よって、本発明によれば従来のものよりも寿命特
性を充分に改善することができる。
体とパッケージ用基板との間に設けられるはんだの微小
柱状体の内部に金属製の芯を有し、内側にくぼんだつづ
み状の側面投影形状になるようにしたので、単にはんだ
微小柱状体のみで半導体基体とパッケージ用基板とを接
続し、その側面投影形状を内側にくぼんだ側面投影形状
にした場合よりも、接続部に加わる応力が低減される。
また、半導体基体とパッケージ用基板との間を金属製の
芯のみで接続した場合よりも応力を低減させることがで
きる。よって、本発明によれば従来のものよりも寿命特
性を充分に改善することができる。
【図1】本発明による集積回路装置の断面図である。
【図2】従来技術による集積回路装置の断面図である。
【図3】本発明の有効性を検証するためのシミュレーシ
ョンモデルを示した図である。
ョンモデルを示した図である。
【図4】図3に示したシミュレーションモデルによるシ
ミュレーション結果を、従来例の場合と共に示した図で
ある。
ミュレーション結果を、従来例の場合と共に示した図で
ある。
1 半導体基体 2 パッケージ用基板 3 はんだの微小柱状体 4 金属製の芯 5,6 端子部 7 高融点はんだ 8 有機絶縁層
Claims (3)
- 【請求項1】 集積回路の半導体基体とパッケージ用基
板との間にはんだの微小柱状体を配置し、上記微小柱状
体の溶着により上記半導体基体と上記パッケージ用基板
との電気的接続と機械的結合を得るフリップチップ実装
構造の集積回路装置において、上記微小柱状体の内部に
金属製の芯を設けたことを特徴とする集積回路装置。 - 【請求項2】 請求項1記載の集積回路装置において、
上記金属製の芯は上記半導体基体側に設けられることを
特徴とする集積回路装置。 - 【請求項3】 請求項1あるいは2記載の集積回路装置
において、上記微小柱状体の側面形状を内側にくぼんだ
つづみ形状としたことを特徴とする集積回路装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5049172A JP2716336B2 (ja) | 1993-03-10 | 1993-03-10 | 集積回路装置 |
DE69428819T DE69428819T2 (de) | 1993-03-10 | 1994-03-07 | Verbindungsstruktur für elektronische Bauteile, welche Lötperlen mit Metallseelen enthalten |
EP94103427A EP0615283B1 (en) | 1993-03-10 | 1994-03-07 | Interconnection structure of electronic parts comprising solder bumps with metal core members |
CA002118649A CA2118649C (en) | 1993-03-10 | 1994-03-09 | Interconnection structure of electronic parts |
AU57713/94A AU675273B2 (en) | 1993-03-10 | 1994-03-09 | Interconnection structure of electronic parts |
KR1019940004651A KR0153212B1 (ko) | 1993-03-10 | 1994-03-10 | 반도체 장치의 상호 접속 구조 및 상호 접속 방법 |
US08/642,410 US5640052A (en) | 1993-03-10 | 1996-05-03 | Interconnection structure of electronic parts |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5049172A JP2716336B2 (ja) | 1993-03-10 | 1993-03-10 | 集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06268015A true JPH06268015A (ja) | 1994-09-22 |
JP2716336B2 JP2716336B2 (ja) | 1998-02-18 |
Family
ID=12823654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5049172A Expired - Lifetime JP2716336B2 (ja) | 1993-03-10 | 1993-03-10 | 集積回路装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5640052A (ja) |
EP (1) | EP0615283B1 (ja) |
JP (1) | JP2716336B2 (ja) |
KR (1) | KR0153212B1 (ja) |
AU (1) | AU675273B2 (ja) |
CA (1) | CA2118649C (ja) |
DE (1) | DE69428819T2 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
US5640052A (en) | 1997-06-17 |
CA2118649C (en) | 2000-05-02 |
JP2716336B2 (ja) | 1998-02-18 |
EP0615283A1 (en) | 1994-09-14 |
KR940022765A (ko) | 1994-10-21 |
DE69428819D1 (de) | 2001-12-06 |
AU5771394A (en) | 1994-09-15 |
DE69428819T2 (de) | 2002-06-20 |
AU675273B2 (en) | 1997-01-30 |
EP0615283B1 (en) | 2001-10-31 |
CA2118649A1 (en) | 1994-09-11 |
KR0153212B1 (ko) | 1998-12-01 |
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