JP6835291B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP6835291B2
JP6835291B2 JP2020507786A JP2020507786A JP6835291B2 JP 6835291 B2 JP6835291 B2 JP 6835291B2 JP 2020507786 A JP2020507786 A JP 2020507786A JP 2020507786 A JP2020507786 A JP 2020507786A JP 6835291 B2 JP6835291 B2 JP 6835291B2
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semiconductor substrate
crystal defect
concentration
semiconductor device
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JPWO2019181852A1 (ja
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吉村　尚
尚 吉村
勇一 小野澤
勇一 小野澤
博 瀧下
博 瀧下
美佐稀 目黒
美佐稀 目黒
源宜 窪内
源宜 窪内
奈緒子 兒玉
奈緒子 兒玉
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
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    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

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Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016051973A1 (ja) 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2016204227A1 (ja) * 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2019181852A1 (ja) 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法
CN110504167A (zh) * 2018-05-17 2019-11-26 上海先进半导体制造股份有限公司 绝缘栅双极型晶体管及其制造方法
CN112219263B (zh) 2018-11-16 2024-09-27 富士电机株式会社 半导体装置及制造方法
US11257943B2 (en) 2019-06-17 2022-02-22 Fuji Electric Co., Ltd. Semiconductor device
US11450734B2 (en) 2019-06-17 2022-09-20 Fuji Electric Co., Ltd. Semiconductor device and fabrication method for semiconductor device
DE102019118803A1 (de) * 2019-07-11 2021-01-14 Infineon Technologies Ag Verfahren zum herstellen einer halbleitervorrichtung und halbleitervorrichtung
JP7404703B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 窒化物半導体装置の製造方法及び窒化物半導体装置
WO2021049499A1 (ja) * 2019-09-11 2021-03-18 富士電機株式会社 半導体装置および製造方法
CN113711364B (zh) * 2019-10-11 2025-07-15 富士电机株式会社 半导体装置和半导体装置的制造方法
JP6981582B2 (ja) * 2019-12-17 2021-12-15 富士電機株式会社 半導体装置
JP7400834B2 (ja) * 2019-12-18 2023-12-19 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7215599B2 (ja) * 2019-12-18 2023-01-31 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021145397A1 (ja) 2020-01-17 2021-07-22 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021166980A1 (ja) * 2020-02-18 2021-08-26 富士電機株式会社 半導体装置
JP7452632B2 (ja) * 2020-04-01 2024-03-19 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102020110072A1 (de) * 2020-04-09 2021-10-14 Infineon Technologies Ag Vertikale leistungs-halbleitervorrichtung und herstellungsverfahren
WO2022014624A1 (ja) * 2020-07-14 2022-01-20 富士電機株式会社 半導体装置
JP7469201B2 (ja) * 2020-09-18 2024-04-16 株式会社デンソー 半導体装置とその製造方法
JP7501663B2 (ja) * 2020-11-11 2024-06-18 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2022107727A1 (ja) * 2020-11-17 2022-05-27 富士電機株式会社 半導体装置
JP7517466B2 (ja) * 2020-11-17 2024-07-17 富士電機株式会社 半導体装置
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JP7632142B2 (ja) * 2021-07-14 2025-02-19 株式会社デンソー 半導体装置
TWI908837B (zh) * 2021-07-23 2025-12-21 晶元光電股份有限公司 半導體元件
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JP7729171B2 (ja) 2021-10-21 2025-08-26 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN118056280A (zh) * 2022-04-27 2024-05-17 富士电机株式会社 半导体装置
JP7683822B2 (ja) * 2022-05-18 2025-05-27 富士電機株式会社 半導体装置
WO2024214461A1 (ja) * 2023-04-14 2024-10-17 富士電機株式会社 半導体装置
WO2025258263A1 (ja) * 2024-06-10 2025-12-18 株式会社ジャパンディスプレイ 酸化物半導体膜、積層構造体、薄膜トランジスタ、および電子機器

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3951738B2 (ja) * 2001-02-23 2007-08-01 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
DE10349582B4 (de) 2003-10-24 2008-09-25 Infineon Technologies Ag Halbleiterdiode sowie dafür geeignetes Herstellungsverfahren
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
JP5396689B2 (ja) 2006-09-07 2014-01-22 富士電機株式会社 半導体装置およびその製造方法
JP5326217B2 (ja) 2007-03-15 2013-10-30 富士電機株式会社 半導体装置およびその製造方法
JP5374883B2 (ja) 2008-02-08 2013-12-25 富士電機株式会社 半導体装置およびその製造方法
JP2010147239A (ja) 2008-12-18 2010-07-01 Toshiba Corp 半導体装置及びその製造方法
US8766413B2 (en) 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
DE102011113549B4 (de) 2011-09-15 2019-10-17 Infineon Technologies Ag Ein Halbleiterbauelement mit einer Feldstoppzone in einem Halbleiterkörper und ein Verfahren zur Herstellung einer Feldstoppzone in einem Halbleiterkörper
JP5776485B2 (ja) * 2011-10-12 2015-09-09 三菱電機株式会社 半導体装置
EP2793266B1 (en) 2011-12-15 2020-11-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device
CN103946985B (zh) 2011-12-28 2017-06-23 富士电机株式会社 半导体装置及半导体装置的制造方法
WO2013108911A1 (ja) 2012-01-19 2013-07-25 富士電機株式会社 半導体装置およびその製造方法
JP6020553B2 (ja) 2012-03-19 2016-11-02 富士電機株式会社 半導体装置の製造方法
US9947761B2 (en) 2012-03-19 2018-04-17 Fuji Electric Co., Ltd. Production method for semiconductor device
US9466689B2 (en) 2012-03-30 2016-10-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device and semiconductor device manufactured thereby
WO2013147274A1 (ja) 2012-03-30 2013-10-03 富士電機株式会社 半導体装置の製造方法
EP2913854B1 (en) 2012-10-23 2020-05-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
US9263271B2 (en) 2012-10-25 2016-02-16 Infineon Technologies Ag Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device
JP6291981B2 (ja) * 2013-04-08 2018-03-14 富士電機株式会社 半導体装置の製造方法
EP2930741B1 (en) 2013-06-26 2022-06-01 Fuji Electric Co., Ltd. Method for manufacturing semiconductor device
DE102013216195B4 (de) 2013-08-14 2015-10-29 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
JP6225649B2 (ja) * 2013-11-12 2017-11-08 株式会社デンソー 絶縁ゲートバイポーラトランジスタおよびその製造方法
US10211325B2 (en) 2014-01-28 2019-02-19 Infineon Technologies Ag Semiconductor device including undulated profile of net doping in a drift zone
JP2015153784A (ja) 2014-02-10 2015-08-24 トヨタ自動車株式会社 半導体装置の製造方法及び半導体装置
US9312135B2 (en) 2014-03-19 2016-04-12 Infineon Technologies Ag Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects
JP6277814B2 (ja) 2014-03-25 2018-02-14 株式会社デンソー 半導体装置
US9887125B2 (en) 2014-06-06 2018-02-06 Infineon Technologies Ag Method of manufacturing a semiconductor device comprising field stop zone
US9754787B2 (en) 2014-06-24 2017-09-05 Infineon Technologies Ag Method for treating a semiconductor wafer
JP2016046480A (ja) 2014-08-26 2016-04-04 トヨタ自動車株式会社 半導体装置の製造方法
CN106062960B (zh) * 2014-09-30 2019-12-10 富士电机株式会社 半导体装置及半导体装置的制造方法
WO2016051973A1 (ja) * 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102014116666B4 (de) 2014-11-14 2022-04-21 Infineon Technologies Ag Ein Verfahren zum Bilden eines Halbleiterbauelements
DE102014117538A1 (de) 2014-11-28 2016-06-02 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen unter Verwendung von Implantation leichter Ionen und Halbleitervorrichtung
JP6109432B2 (ja) 2015-04-02 2017-04-05 三菱電機株式会社 電力用半導体装置の製造方法
WO2016204227A1 (ja) 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6272799B2 (ja) * 2015-06-17 2018-01-31 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2017047276A1 (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
DE112016001611B4 (de) 2015-09-16 2022-06-30 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
WO2017048275A1 (en) 2015-09-18 2017-03-23 Intel Corporation Deuterium-based passivation of non-planar transistor interfaces
JP6676988B2 (ja) * 2016-01-29 2020-04-08 株式会社デンソー 半導体装置
CN107851584B (zh) 2016-02-23 2021-06-11 富士电机株式会社 半导体装置
WO2017155122A1 (ja) * 2016-03-10 2017-09-14 富士電機株式会社 半導体装置
JP6508099B2 (ja) 2016-03-18 2019-05-08 三菱電機株式会社 半導体素子
DE102016112139B3 (de) 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
CN108604602B (zh) 2016-08-12 2021-06-15 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6733739B2 (ja) 2016-10-17 2020-08-05 富士電機株式会社 半導体装置
DE102016120771B3 (de) 2016-10-31 2018-03-08 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen und Halbleitervorrichtung, die wasserstoff-korrelierte Donatoren enthält
CN109219870B (zh) 2016-12-08 2021-09-10 富士电机株式会社 半导体装置的制造方法
DE102017118975B4 (de) 2017-08-18 2023-07-27 Infineon Technologies Ag Halbleitervorrichtung mit einem cz-halbleiterkörper und verfahren zum herstellen einer halbleitervorrichtung mit einem cz-halbleiterkörper
WO2019181852A1 (ja) 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
DE112019001123B4 (de) 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
CN118676194A (zh) 2018-12-28 2024-09-20 富士电机株式会社 半导体装置
CN113711364B (zh) 2019-10-11 2025-07-15 富士电机株式会社 半导体装置和半导体装置的制造方法

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