JP7452632B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP7452632B2 JP7452632B2 JP2022511136A JP2022511136A JP7452632B2 JP 7452632 B2 JP7452632 B2 JP 7452632B2 JP 2022511136 A JP2022511136 A JP 2022511136A JP 2022511136 A JP2022511136 A JP 2022511136A JP 7452632 B2 JP7452632 B2 JP 7452632B2
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Description
特許文献1 US2015/0050754号
NF0=NH+NB0 ・・・式(1)
一方、実際のドナー濃度NFreは、実際のバルク・ドナー濃度NBreに、水素ドナー濃度NHを加算したものであるので、下式で与えられる。
NFre=NH+NBre ・・・式(2)
β=NBre/NB0 ・・・式(3)
パラメータβは、実際のバルク・ドナー濃度NBreと仕様値NB0との比であり、1から離れるほど実際のバルク・ドナー濃度NBreが仕様値NB0からずれていることを示す。
γ=NFre/NF0 ・・・式(4)
パラメータγは、実際のドナー濃度NFreと目標値NF0との比であり、1から離れるほど実際のドナー濃度NFreが目標値NF0からずれていることを示す。つまり、γが十分に1に近ければ、実際のバルク・ドナー濃度NBreが仕様値NB0に対してβ倍ずれた場合でも、βにほとんど依らずに、実際のドナー濃度NFreが目標値NF0とほぼ一致していることを示している。
・中性子照射FZウエハ・・・±8%(比では0.92から1.08)
・ガスドープFZウエハ・・・±12%(比では0.88から1.12)
このため、γが0.85以上、1.15以下であれば、最終的なドナー濃度NFreのばらつきが、上述したFZ法のシリコンウエハのバルク・ドナー濃度と同程度になる。本明細書では、γの許容値を0.85以上、1.15以下とする。
NB0=ε'×NF0 ・・・式(5)
ただし、0<ε'<1。パラメータε'は、ドナー濃度の目標値NF0に対して、バルク・ドナー濃度の仕様値NB0をε'だけ小さく設定する、という意味のパラメータである。
ε'を、0にならない範囲で1よりもどれだけ小さい値とすれば、γがβによらずに、且つ、十分1に近づくかを検討する。
ε=1/ε' ・・・式(6)
式(5)および式(6)から、下式が得られる。
NB0=NF0/ε ・・・式(7)
式(1)に式(7)を代入して、下式が得られる。
NF0=NH+NF0/ε つまり、NH=(1-1/ε)NF0 ・・・式(8)
式(2)に式(8)および式(3)を代入して、下式が得られる。
NFre=(1-1/ε)NF0+βNB0 ・・・式(9)
式(9)に式(7)を代入して、下式が得られる。
NFre=(1-1/ε)NF0+(β/ε)NF0
=(1-1/ε+β/ε)NF0 ・・・式(10)
式(4)に式(10)を代入して、下式が得られる。
γ=1-1/ε+β/ε
=1+(β―1)/ε ・・・式(11)
式(6)および式(11)から、下式が得られる。
γ=1+ε'(β―1) ・・・式(12)
(範囲A)
ε'が0.001以上、0.5以下。ε'が0.5の場合、βが0.7~1.3の範囲内であれば、γが許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.001の場合、ドナー濃度の目標値NF0は1×1011/cm3であり、約46000Ωcmに相当する。
ε'が0.01以上、0.333以下。ε'が0.333の場合、βが0.5~1.5の範囲内であれば、γが許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.01の場合、ドナー濃度の目標値NF0は1×1012/cm3であり、約4600Ωcmに相当する。
ε'が0.03以上、0.25以下。ε'が0.25の場合、βが概ね0.4~1.6の範囲内であれば、γが許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.03の場合、ドナー濃度の目標値NF0は3×1012/cm3であり、約1500Ωcmに相当する。
ε'が0.1以上、0.2以下。ε'が0.2の場合、βが概ね0.2~1.8の範囲内であれば、γが許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.1の場合、ドナー濃度の目標値NF0は1×1013/cm3であり、約460Ωcmに相当する。
(範囲E)
ε'が0.001以上、0.1以下。ε'が0.1の場合、βが概ね0.05(図示しない)~3.0の範囲内であれば、γが十分許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.1の場合、ドナー濃度の目標値NF0は1×1013/cm3であり、約460Ωcmに相当する。
ε'が0.002以上、0.05以下。ε'が0.05の場合、βが概ね0.01(図示しない)~5.0の範囲内であれば、γが十分許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.05の場合、ドナー濃度の目標値NF0は5×1012/cm3であり、約920Ωcmに相当する。
ε'が0.005以上、0.02以下。ε'が0.02の場合、βが概ね0.01(図示しない)~10.0の範囲内であれば、γが十分許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.02の場合、ドナー濃度の目標値NF0は2×1012/cm3であり、約2300Ωcmに相当する。
ε'が0.01±0.002(20%)の幅を有する場合。ε'が0.01の場合、βが概ね0.01(図示しない)~20.0(図示しない)の範囲内であれば、γが十分許容範囲内となる。例えばバルク・ドナー濃度の仕様値NB0が1×1014/cm3であり、ε'が0.01の場合、ドナー濃度の目標値NF0は1×1012/cm3であり、約4600Ωcmに相当する。
・下限314:(9.20245×1012)/x
・上限313:(4.60123×1016)/x
・下限314:(9.20245×1013)/x
・上限313:(3.06442×1016)/x
・下限314:(2.76074×1014)/x
・上限313:(2.30061×1016)/x
・下限314:(9.20245×1014)/x
・上限313:(1.84049×1016)/x
・下限314:(9.20245×1012)/x
・上限313:(9.20245×1015)/x
・下限314:(1.84049×1013)/x
・上限313:(4.60123×1015)/x
・下限314:(4.60123×1013)/x
・上限313:(1.84049×1015)/x
・下限314:(9.20245×1013)/x
・上限313:(9.20245×1014)/x
なお、各範囲における上限313および下限314は、±20%の幅を有してよい。
Claims (21)
- 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記半導体基板の前記下面側に配置され、水素ドナーを含み、前記半導体基板の深さ方向におけるドーピング濃度分布が単一の第1のドーピング濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記半導体基板の前記上面との間に配置され、水素ドナーを含み、バルク・ドナー濃度よりもドナー濃度が高い第1導電型の高濃度領域と、
前記バッファ領域と前記半導体基板の前記下面との間に配置され、前記高濃度領域よりもドーピング濃度の高い第1導電型または第2導電型の下面領域と
を備え、
前記バッファ領域の前記第1のドーピング濃度ピークは、水素ドナー以外のN型ドーパントの濃度ピークである
半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記半導体基板の前記下面側に配置され、水素ドナーを含み、前記半導体基板の深さ方向におけるドーピング濃度分布が単一の第1のドーピング濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記半導体基板の前記上面との間に配置され、水素ドナーを含み、バルク・ドナー濃度よりもドナー濃度が高い第1導電型の高濃度領域と、
前記バッファ領域と前記半導体基板の前記下面との間に配置され、前記高濃度領域よりもドーピング濃度の高い第1導電型または第2導電型の下面領域と、
前記半導体基板の前記上面側に配置された不純物化学濃度ピークを備え、
前記高濃度領域は、前記バッファ領域の前記第1のドーピング濃度ピークから前記不純物化学濃度ピークまで設けられている
半導体装置。 - 前記不純物化学濃度ピークの頂点から前記上面側に向かって不純物化学濃度が減少する上側裾は、前記不純物化学濃度ピークの頂点から前記下面側に向かって前記不純物化学濃度が減少する下側裾よりも、前記不純物化学濃度が急峻に減少する
請求項2に記載の半導体装置。 - 前記バッファ領域の前記第1のドーピング濃度ピークと同一の深さ位置に配置された水素化学濃度ピークと、
前記不純物化学濃度ピークと同一の深さ位置に配置された第2のドーピング濃度ピークと
を更に備え、
前記不純物化学濃度ピークは、水素の化学濃度ピークであり、
それぞれの濃度ピークは、前記半導体基板の前記下面から前記上面に向かうにつれて濃度が増大する下側裾を有し、
前記第2のドーピング濃度ピークの前記下側裾の傾きを、前記不純物化学濃度ピークの前記下側裾の傾きで規格化した値が、前記第1のドーピング濃度ピークの前記下側裾の傾きを、前記水素化学濃度ピークの前記下側裾の傾きで規格化した値よりも小さい
請求項3に記載の半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板を備える半導体装置であって、
前記半導体装置は、
前記半導体基板の前記下面側に配置され、水素ドナーを含み、前記半導体基板の深さ方向におけるドーピング濃度分布が単一の第1のドーピング濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記半導体基板の前記上面との間に配置され、水素ドナーを含み、バルク・ドナー濃度よりもドナー濃度が高い第1導電型の高濃度領域と、
前記バッファ領域と前記半導体基板の前記下面との間に配置され、前記高濃度領域よりもドーピング濃度の高い第1導電型または第2導電型の下面領域と
を更に備え、
前記半導体装置の定格電圧をx(V)とした場合に、前記バルク・ドナー濃度(atoms/cm3)が、(9.20245×1012)/x以上、(4.60123×1016)/x以下である
半導体装置。 - 前記バルク・ドナー濃度(atoms/cm3)が、(9.20245×1014)/x以上、(1.84049×1016)/x以下である
請求項5に記載の半導体装置。 - 前記半導体基板の前記深さ方向の中央におけるドナー濃度(/cm3)が、(9.20245×1015)/x以上、(9.20245×1016)/x以下である
請求項5または6に記載の半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記半導体基板の前記下面側に配置され、水素ドナーを含み、前記半導体基板の深さ方向におけるドーピング濃度分布が単一の第1のドーピング濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記半導体基板の前記上面との間に配置され、水素ドナーを含み、バルク・ドナー濃度よりもドナー濃度が高い第1導電型の高濃度領域と、
前記バッファ領域と前記半導体基板の前記下面との間に配置され、前記高濃度領域よりもドーピング濃度の高い第1導電型または第2導電型の下面領域と
を備え、
前記半導体基板の前記上面側に配置され、前記高濃度領域よりもドーピング濃度の高い蓄積領域を更に備え、
前記高濃度領域は、前記蓄積領域と接する位置まで設けられる
半導体装置。 - 前記バッファ領域の前記第1のドーピング濃度ピークは、水素ドナーの濃度ピークである
請求項2から8のいずれか一項に記載の半導体装置。 - 前記高濃度領域は、前記半導体基板の深さ方向において、前記半導体基板の厚みの50%以上の長さを有する
請求項1から9のいずれか一項に記載の半導体装置。 - 前記高濃度領域は、前記半導体基板の深さ方向において、70μm以上の長さを有する
請求項1から10のいずれか一項に記載の半導体装置。 - 前記高濃度領域のドナー濃度は、前記バルク・ドナー濃度の2倍以上である
請求項1から11のいずれか一項に記載の半導体装置。 - 前記高濃度領域のドナー濃度は、前記バルク・ドナー濃度の5倍以上である
請求項12に記載の半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板の前記下面から、第2の位置に荷電粒子を注入し、且つ、前記第2の位置よりも前記下面側の領域において水素化学濃度分布が単一のピークを有するように、第1の位置に水素イオンを注入する第1注入段階と、
前記半導体基板をアニールして、前記第1の位置と前記第2の位置との間に、バルク・ドナー濃度よりもドナー濃度が高い高濃度領域を形成する第1アニール段階と、
前記第1アニール段階の後に、前記半導体基板の前記下面側を研削して、前記第1の位置を含む領域を除去する研削段階を備える
半導体装置の製造方法。 - 前記研削段階の後に、前記半導体基板の前記下面から、前記第2の位置よりも前記下面側に、N型のドーパントを注入する第2注入段階を更に備える
請求項14に記載の半導体装置の製造方法。 - 前記研削段階の後に、前記半導体基板の前記下面から、前記第2の位置よりも前記下面側に、水素イオンを注入する第2注入段階を更に備える
請求項14に記載の半導体装置の製造方法。 - 上面および下面を有し、バルク・ドナーを含む半導体基板の前記下面から、第2の位置に水素イオンを注入し、且つ、前記第2の位置よりも前記下面側の領域において水素化学濃度分布が単一のピークを有するように、第1の位置に水素イオンを注入する第1注入段階と、
前記半導体基板をアニールして、前記第1の位置と前記第2の位置との間に、バルク・ドナー濃度よりもドナー濃度が高い高濃度領域を形成する第1アニール段階と
を備え、
前記第2の位置は、前記半導体基板の前記上面の側に配置されている
半導体装置の製造方法。 - 上面および下面を有し、バルク・ドナーを含む半導体基板の前記下面から、第2の位置に水素イオンを注入し、且つ、前記第2の位置よりも前記下面側の領域において水素化学濃度分布が単一のピークを有するように、第1の位置に水素イオンを注入する第1注入段階と、
前記半導体基板をアニールして、前記第1の位置と前記第2の位置との間に、バルク・ドナー濃度よりもドナー濃度が高い高濃度領域を形成する第1アニール段階と
を備え、
前記第1アニール段階を行った後の前記半導体基板が、前記第2の位置にドーピング濃度ピークを備える
半導体装置の製造方法。 - 前記第1アニール段階を行った後の前記半導体基板が、前記第2の位置に設けられる前記ドーピング濃度ピークよりも前記上面の側に、ドーピング濃度が前記バルク・ドナー濃度であるバルク・ドナー領域を有する
請求項18に記載の半導体装置の製造方法。 - 上面および下面を有し、バルク・ドナーを含む半導体基板の前記下面から、第2の位置に水素イオンを注入し、且つ、前記第2の位置よりも前記下面側の領域において水素化学濃度分布が単一のピークを有するように、第1の位置に水素イオンを注入する第1注入段階と、
前記半導体基板をアニールして、前記第1の位置と前記第2の位置との間に、バルク・ドナー濃度よりもドナー濃度が高い高濃度領域を形成する第1アニール段階と
を備え、
前記第1アニール段階を行った後の前記半導体基板が、前記第2の位置よりも前記上面の側に、ドーピング濃度が前記バルク・ドナー濃度であるバルク・ドナー領域を有する
半導体装置の製造方法。 - 前記第2の位置は、前記半導体基板の前記上面の側に配置されている
請求項18から20のいずれか一項に記載の半導体装置の製造方法。
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WO2007055352A1 (ja) | 2005-11-14 | 2007-05-18 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
JP2013138172A (ja) | 2011-11-30 | 2013-07-11 | Denso Corp | 半導体装置 |
WO2017047285A1 (ja) | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2017047276A1 (ja) | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2019181852A1 (ja) | 2018-03-19 | 2019-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2020036015A1 (ja) | 2018-08-14 | 2020-02-20 | 富士電機株式会社 | 半導体装置および製造方法 |
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WO2007055352A1 (ja) | 2005-11-14 | 2007-05-18 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
JP2013138172A (ja) | 2011-11-30 | 2013-07-11 | Denso Corp | 半導体装置 |
WO2017047285A1 (ja) | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2017047276A1 (ja) | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2019181852A1 (ja) | 2018-03-19 | 2019-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2020036015A1 (ja) | 2018-08-14 | 2020-02-20 | 富士電機株式会社 | 半導体装置および製造方法 |
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