JP7400834B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP7400834B2 JP7400834B2 JP2021565577A JP2021565577A JP7400834B2 JP 7400834 B2 JP7400834 B2 JP 7400834B2 JP 2021565577 A JP2021565577 A JP 2021565577A JP 2021565577 A JP2021565577 A JP 2021565577A JP 7400834 B2 JP7400834 B2 JP 7400834B2
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- 239000004065 semiconductor Substances 0.000 title claims description 362
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims description 480
- 239000001257 hydrogen Substances 0.000 claims description 480
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 421
- 239000000758 substrate Substances 0.000 claims description 256
- 239000000126 substance Substances 0.000 claims description 155
- 238000009826 distribution Methods 0.000 claims description 92
- 238000002347 injection Methods 0.000 claims description 89
- 239000007924 injection Substances 0.000 claims description 89
- 238000002513 implantation Methods 0.000 claims description 72
- -1 hydrogen ions Chemical class 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 47
- 238000010438 heat treatment Methods 0.000 claims description 32
- 238000009825 accumulation Methods 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 3
- 239000000386 donor Substances 0.000 description 138
- 238000010586 diagram Methods 0.000 description 35
- 230000007547 defect Effects 0.000 description 31
- 239000000370 acceptor Substances 0.000 description 28
- 239000000852 hydrogen donor Substances 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 10
- 230000001133 acceleration Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 101150017296 ddi-1 gene Proteins 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L21/8232—Field-effect technology
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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Description
特許文献1 米国特許出願公開第2015/0050754号明細書
特許文献2 再公表特許第2016-204227号
特許文献3 特開2007-266233号公報
Claims (19)
- 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの30%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記水素増加部は、キャリアのライフタイムを調整するライフタイム調整部を含む
半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの30%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記半導体基板において前記水素増加部以外の領域に設けられた水素濃度ピークを有し、
前記半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の前記上面と前記ドリフト領域との間に設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型の蓄積領域と、
前記半導体基板の前記上面と前記蓄積領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面と前記ベース領域との間に設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の前記上面から前記ドリフト領域に達する深さ位置まで設けられたゲートトレンチ部と
を備え、
前記蓄積領域は、前記水素濃度ピークを含み、
前記水素増加部は、前記ゲートトレンチ部の下端と、前記半導体基板の前記下面の間に配置されている
半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの30%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記半導体基板において前記水素増加部以外の領域に設けられた水素濃度ピークを有し、
前記水素濃度ピークが、前記水素増加部よりも前記半導体基板の下面側に配置され、
前記水素濃度ピークよりも前記半導体基板の下面側に配置された、水素化学濃度の谷部を更に備える
半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの30%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記水素増加部は、水素化学濃度の分布形状を近似した直線に対して、±7%以下の変動を有する
半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの30%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記水素増加部は、前記半導体基板の下面側において、深さ方向の水素化学濃度分布の傾きが前記下面に近づくほど増加する部分を有し、
前記半導体基板は、水素濃度ピークを有さない
半導体装置。 - 局所的な水素濃度ピークが設けられた部分を除き、前記上面から前記下面まで前記水素化学濃度が単調に増加している
請求項1から5のいずれか一項に記載の半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの30%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記水素増加部の前記上面側の端部における水素化学濃度より、前記水素増加部の前記下面側の端部における水素化学濃度のほうが高く、
前記水素増加部は、前記半導体基板の下面側において、深さ方向の水素化学濃度分布の傾きが前記下面に近づくほど増加する部分を有する
半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの70%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記水素増加部の前記上面側の端部における水素化学濃度より、前記水素増加部の前記下面側の端部における水素化学濃度のほうが高い
半導体装置。 - 上面および下面を有し、バルク・ドナーを含む半導体基板と、
前記上面から前記下面に向かって、水素化学濃度が単調に増加する水素増加部と、
前記半導体基板において前記水素増加部以外の領域に設けられた水素濃度ピークと、
前記半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の前記上面と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面と前記ベース領域との間に設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の前記下面と前記ドリフト領域との間に設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のバッファ領域と、
前記半導体基板の前記上面から前記ドリフト領域に達する深さ位置まで設けられたゲートトレンチ部と
を備え、
前記水素増加部は、前記半導体基板の深さ方向における厚みの30%以上に渡って設けられ、
前記水素増加部におけるドナー濃度は、バルク・ドナー濃度よりも高く、
前記水素増加部の前記上面側の端部における水素化学濃度より、前記水素増加部の前記下面側の端部における水素化学濃度のほうが高く、
前記バッファ領域は、前記水素濃度ピークを含み、
前記水素増加部は、前記ゲートトレンチ部の下端から、前記バッファ領域の上端まで設けられている
半導体装置。 - 前記バッファ領域における前記水素化学濃度の分布は、前記水素濃度ピークから前記下面に向かう下側裾と、前記水素濃度ピークから前記上面に向かう上側裾を有し、
前記上側裾は、前記下側裾よりも急峻に水素化学濃度が変化し、
前記ゲートトレンチ部の下端から前記上側裾まで、前記水素化学濃度が単調に増加している
請求項9に記載の半導体装置。 - 前記バッファ領域における前記水素化学濃度の分布は、前記水素濃度ピークから前記下面に向かう下側裾と、前記水素濃度ピークから前記上面に向かう上側裾を有し、
前記下側裾は、前記上側裾よりも急峻に水素化学濃度が変化し、
前記ゲートトレンチ部の下端から前記上側裾まで、前記水素化学濃度が単調に増加している
請求項9に記載の半導体装置。 - 上面および下面を有する半導体基板を備える半導体装置の製造方法であって、
前記半導体基板の前記上面から、前記半導体基板の内部の予め定められた第1注入位置に水素イオンを注入する第1水素注入段階と、
前記半導体基板の前記下面を研削して、水素が存在する領域の一部を除去する研削段階と、
前記半導体基板を熱処理する熱処理段階と
を備え、
前記第1注入位置は、前記研削段階の後の前記半導体基板の深さ方向の中央よりも下方に配置されている
半導体装置の製造方法。 - 上面および下面を有する半導体基板を備える半導体装置の製造方法であって、
前記半導体基板の前記下面を研削する研削段階と、
前記半導体基板の前記上面から、前記半導体基板の内部の予め定められた第1注入位置に水素イオンを注入する第1水素注入段階と、
前記半導体基板を熱処理する熱処理段階と
を備え、
前記第1注入位置は、前記研削段階の後の前記半導体基板の深さ方向の中央よりも下方に配置されている
半導体装置の製造方法。 - 前記研削段階において、前記第1注入位置を含む領域を除去する
請求項12に記載の半導体装置の製造方法。 - 前記第1注入位置は、前記半導体基板が研削されて除去された領域内の位置である
請求項13に記載の半導体装置の製造方法。 - 前記熱処理段階の前に、前記半導体基板の前記上面または前記下面から、前記半導体基板の内部の予め定められた第2注入位置に水素イオンを注入する第2水素注入段階を備える
請求項12から15のいずれか一項に記載の半導体装置の製造方法。 - 前記研削段階において、前記第2注入位置を含む領域を除去する
請求項16に記載の半導体装置の製造方法。 - 前記第1水素注入段階により注入された水素の第1水素濃度ピークと、前記第2水素注入段階により注入された水素の第2水素濃度ピークとが重なるように、前記第2注入位置に水素を注入する
請求項16または17に記載の半導体装置の製造方法。 - 前記第2注入位置は、前記研削段階で研削されない位置に配置されている
請求項16に記載の半導体装置の製造方法。
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