DE112019000094T5 - Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung - Google Patents

Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung Download PDF

Info

Publication number
DE112019000094T5
DE112019000094T5 DE112019000094.2T DE112019000094T DE112019000094T5 DE 112019000094 T5 DE112019000094 T5 DE 112019000094T5 DE 112019000094 T DE112019000094 T DE 112019000094T DE 112019000094 T5 DE112019000094 T5 DE 112019000094T5
Authority
DE
Germany
Prior art keywords
semiconductor substrate
area
semiconductor device
concentration
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112019000094.2T
Other languages
German (de)
English (en)
Inventor
Takashi Yoshimura
Yuichi Onozawa
Hiroshi TAKISHITA
Misaki MEGURO
Motoyoshi KUBOUCHI
Naoko Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112019000094T5 publication Critical patent/DE112019000094T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE112019000094.2T 2018-03-19 2019-03-18 Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung Pending DE112019000094T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-051655 2018-03-19
JP2018051655 2018-03-19
PCT/JP2019/011180 WO2019181852A1 (ja) 2018-03-19 2019-03-18 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE112019000094T5 true DE112019000094T5 (de) 2020-09-24

Family

ID=67987212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112019000094.2T Pending DE112019000094T5 (de) 2018-03-19 2019-03-18 Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung

Country Status (5)

Country Link
US (4) US11239324B2 (https=)
JP (4) JP6835291B2 (https=)
CN (1) CN111095569B (https=)
DE (1) DE112019000094T5 (https=)
WO (1) WO2019181852A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12051591B2 (en) 2019-12-17 2024-07-30 Fuji Electric Co., Ltd. Semiconductor device
US12302617B2 (en) 2019-10-11 2025-05-13 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US12300726B2 (en) 2018-03-19 2025-05-13 Fuji Electric Co., Ltd. Semiconductor device and semiconductor device manufacturing method
US12593478B2 (en) 2021-03-17 2026-03-31 Fuji Electric Co., Ltd. Semiconductor device
US12593462B2 (en) 2021-10-21 2026-03-31 Mitsubishi Electric Corporation IGBT and diode with lifetime control regions

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016051973A1 (ja) 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2016204227A1 (ja) * 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
CN110504167A (zh) * 2018-05-17 2019-11-26 上海先进半导体制造股份有限公司 绝缘栅双极型晶体管及其制造方法
CN112219263B (zh) 2018-11-16 2024-09-27 富士电机株式会社 半导体装置及制造方法
US11257943B2 (en) 2019-06-17 2022-02-22 Fuji Electric Co., Ltd. Semiconductor device
US11450734B2 (en) 2019-06-17 2022-09-20 Fuji Electric Co., Ltd. Semiconductor device and fabrication method for semiconductor device
DE102019118803A1 (de) * 2019-07-11 2021-01-14 Infineon Technologies Ag Verfahren zum herstellen einer halbleitervorrichtung und halbleitervorrichtung
JP7404703B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 窒化物半導体装置の製造方法及び窒化物半導体装置
WO2021049499A1 (ja) * 2019-09-11 2021-03-18 富士電機株式会社 半導体装置および製造方法
JP7400834B2 (ja) * 2019-12-18 2023-12-19 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7215599B2 (ja) * 2019-12-18 2023-01-31 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021145397A1 (ja) 2020-01-17 2021-07-22 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021166980A1 (ja) * 2020-02-18 2021-08-26 富士電機株式会社 半導体装置
JP7452632B2 (ja) * 2020-04-01 2024-03-19 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102020110072A1 (de) * 2020-04-09 2021-10-14 Infineon Technologies Ag Vertikale leistungs-halbleitervorrichtung und herstellungsverfahren
WO2022014624A1 (ja) * 2020-07-14 2022-01-20 富士電機株式会社 半導体装置
JP7469201B2 (ja) * 2020-09-18 2024-04-16 株式会社デンソー 半導体装置とその製造方法
JP7501663B2 (ja) * 2020-11-11 2024-06-18 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2022107727A1 (ja) * 2020-11-17 2022-05-27 富士電機株式会社 半導体装置
JP7517466B2 (ja) * 2020-11-17 2024-07-17 富士電機株式会社 半導体装置
JP7658117B2 (ja) * 2021-03-05 2025-04-08 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN113054041B (zh) * 2021-03-05 2023-01-31 中国科学院苏州纳米技术与纳米仿生研究所 用于光导开关的衬底及其制作方法、光导开关
JP7632142B2 (ja) * 2021-07-14 2025-02-19 株式会社デンソー 半導体装置
TWI908837B (zh) * 2021-07-23 2025-12-21 晶元光電股份有限公司 半導體元件
CN113921395A (zh) * 2021-10-13 2022-01-11 南瑞联研半导体有限责任公司 一种低损耗igbt芯片集电极结构及其制备方法
CN118056280A (zh) * 2022-04-27 2024-05-17 富士电机株式会社 半导体装置
JP7683822B2 (ja) * 2022-05-18 2025-05-27 富士電機株式会社 半導体装置
WO2024214461A1 (ja) * 2023-04-14 2024-10-17 富士電機株式会社 半導体装置
WO2025258263A1 (ja) * 2024-06-10 2025-12-18 株式会社ジャパンディスプレイ 酸化物半導体膜、積層構造体、薄膜トランジスタ、および電子機器

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3951738B2 (ja) * 2001-02-23 2007-08-01 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
DE10349582B4 (de) 2003-10-24 2008-09-25 Infineon Technologies Ag Halbleiterdiode sowie dafür geeignetes Herstellungsverfahren
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
JP5396689B2 (ja) 2006-09-07 2014-01-22 富士電機株式会社 半導体装置およびその製造方法
JP5326217B2 (ja) 2007-03-15 2013-10-30 富士電機株式会社 半導体装置およびその製造方法
JP5374883B2 (ja) 2008-02-08 2013-12-25 富士電機株式会社 半導体装置およびその製造方法
JP2010147239A (ja) 2008-12-18 2010-07-01 Toshiba Corp 半導体装置及びその製造方法
US8766413B2 (en) 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
DE102011113549B4 (de) 2011-09-15 2019-10-17 Infineon Technologies Ag Ein Halbleiterbauelement mit einer Feldstoppzone in einem Halbleiterkörper und ein Verfahren zur Herstellung einer Feldstoppzone in einem Halbleiterkörper
JP5776485B2 (ja) * 2011-10-12 2015-09-09 三菱電機株式会社 半導体装置
EP2793266B1 (en) 2011-12-15 2020-11-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device
CN103946985B (zh) 2011-12-28 2017-06-23 富士电机株式会社 半导体装置及半导体装置的制造方法
WO2013108911A1 (ja) 2012-01-19 2013-07-25 富士電機株式会社 半導体装置およびその製造方法
JP6020553B2 (ja) 2012-03-19 2016-11-02 富士電機株式会社 半導体装置の製造方法
US9947761B2 (en) 2012-03-19 2018-04-17 Fuji Electric Co., Ltd. Production method for semiconductor device
US9466689B2 (en) 2012-03-30 2016-10-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device and semiconductor device manufactured thereby
WO2013147274A1 (ja) 2012-03-30 2013-10-03 富士電機株式会社 半導体装置の製造方法
EP2913854B1 (en) 2012-10-23 2020-05-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
US9263271B2 (en) 2012-10-25 2016-02-16 Infineon Technologies Ag Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device
JP6291981B2 (ja) * 2013-04-08 2018-03-14 富士電機株式会社 半導体装置の製造方法
EP2930741B1 (en) 2013-06-26 2022-06-01 Fuji Electric Co., Ltd. Method for manufacturing semiconductor device
DE102013216195B4 (de) 2013-08-14 2015-10-29 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
JP6225649B2 (ja) * 2013-11-12 2017-11-08 株式会社デンソー 絶縁ゲートバイポーラトランジスタおよびその製造方法
US10211325B2 (en) 2014-01-28 2019-02-19 Infineon Technologies Ag Semiconductor device including undulated profile of net doping in a drift zone
JP2015153784A (ja) 2014-02-10 2015-08-24 トヨタ自動車株式会社 半導体装置の製造方法及び半導体装置
US9312135B2 (en) 2014-03-19 2016-04-12 Infineon Technologies Ag Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects
JP6277814B2 (ja) 2014-03-25 2018-02-14 株式会社デンソー 半導体装置
US9887125B2 (en) 2014-06-06 2018-02-06 Infineon Technologies Ag Method of manufacturing a semiconductor device comprising field stop zone
US9754787B2 (en) 2014-06-24 2017-09-05 Infineon Technologies Ag Method for treating a semiconductor wafer
JP2016046480A (ja) 2014-08-26 2016-04-04 トヨタ自動車株式会社 半導体装置の製造方法
CN106062960B (zh) * 2014-09-30 2019-12-10 富士电机株式会社 半导体装置及半导体装置的制造方法
WO2016051973A1 (ja) * 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102014116666B4 (de) 2014-11-14 2022-04-21 Infineon Technologies Ag Ein Verfahren zum Bilden eines Halbleiterbauelements
DE102014117538A1 (de) 2014-11-28 2016-06-02 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen unter Verwendung von Implantation leichter Ionen und Halbleitervorrichtung
JP6109432B2 (ja) 2015-04-02 2017-04-05 三菱電機株式会社 電力用半導体装置の製造方法
WO2016204227A1 (ja) 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6272799B2 (ja) * 2015-06-17 2018-01-31 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2017047276A1 (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
DE112016001611B4 (de) 2015-09-16 2022-06-30 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
WO2017048275A1 (en) 2015-09-18 2017-03-23 Intel Corporation Deuterium-based passivation of non-planar transistor interfaces
JP6676988B2 (ja) * 2016-01-29 2020-04-08 株式会社デンソー 半導体装置
CN107851584B (zh) 2016-02-23 2021-06-11 富士电机株式会社 半导体装置
WO2017155122A1 (ja) * 2016-03-10 2017-09-14 富士電機株式会社 半導体装置
JP6508099B2 (ja) 2016-03-18 2019-05-08 三菱電機株式会社 半導体素子
DE102016112139B3 (de) 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
CN108604602B (zh) 2016-08-12 2021-06-15 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6733739B2 (ja) 2016-10-17 2020-08-05 富士電機株式会社 半導体装置
DE102016120771B3 (de) 2016-10-31 2018-03-08 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen und Halbleitervorrichtung, die wasserstoff-korrelierte Donatoren enthält
CN109219870B (zh) 2016-12-08 2021-09-10 富士电机株式会社 半导体装置的制造方法
DE102017118975B4 (de) 2017-08-18 2023-07-27 Infineon Technologies Ag Halbleitervorrichtung mit einem cz-halbleiterkörper und verfahren zum herstellen einer halbleitervorrichtung mit einem cz-halbleiterkörper
WO2019181852A1 (ja) 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
DE112019001123B4 (de) 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
CN118676194A (zh) 2018-12-28 2024-09-20 富士电机株式会社 半导体装置
CN113711364B (zh) 2019-10-11 2025-07-15 富士电机株式会社 半导体装置和半导体装置的制造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12300726B2 (en) 2018-03-19 2025-05-13 Fuji Electric Co., Ltd. Semiconductor device and semiconductor device manufacturing method
US12302617B2 (en) 2019-10-11 2025-05-13 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
DE112020001029B4 (de) * 2019-10-11 2025-06-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
US12051591B2 (en) 2019-12-17 2024-07-30 Fuji Electric Co., Ltd. Semiconductor device
US12593478B2 (en) 2021-03-17 2026-03-31 Fuji Electric Co., Ltd. Semiconductor device
US12593462B2 (en) 2021-10-21 2026-03-31 Mitsubishi Electric Corporation IGBT and diode with lifetime control regions

Also Published As

Publication number Publication date
JP7327541B2 (ja) 2023-08-16
JP2023145675A (ja) 2023-10-11
JP2022062217A (ja) 2022-04-19
JP7024896B2 (ja) 2022-02-24
US11239324B2 (en) 2022-02-01
JPWO2019181852A1 (ja) 2020-10-01
US20250311341A1 (en) 2025-10-02
US12300726B2 (en) 2025-05-13
US20240047535A1 (en) 2024-02-08
US11824095B2 (en) 2023-11-21
JP7655354B2 (ja) 2025-04-02
US20200194562A1 (en) 2020-06-18
CN111095569A (zh) 2020-05-01
JP2021073733A (ja) 2021-05-13
WO2019181852A1 (ja) 2019-09-26
CN111095569B (zh) 2023-11-28
US20220140091A1 (en) 2022-05-05
JP6835291B2 (ja) 2021-02-24

Similar Documents

Publication Publication Date Title
DE112019000094T5 (de) Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung
DE112017000064B4 (de) Halbleitervorrichtung
DE112016000168B4 (de) Halbleitervorrichtung
DE112019001741B4 (de) Halbleitervorrichtung und herstellungsverfahren
DE112020002205B4 (de) Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung
DE102021114181A1 (de) Halbleitervorrichtung
DE112017002382T5 (de) Halbleitervorrichtung und herstellungsverfahren derselben
DE102019119020A1 (de) Siliziumcarbid-vorrichtung mit kompensationsschicht und verfahren zur herstellung
DE102012210053A1 (de) Halbleitervorrichtung, die einen Bipolartransistor mit isolierter Gate-Elektrode und eine Diode beinhaltet
DE112021002169T5 (de) Halbleitervorrichtung
DE102021122335A1 (de) Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE112021000166B4 (de) Halbleitervorrichtung
DE102021110549A1 (de) Halbleitervorrichtung
DE112020002227T5 (de) Halbleitervorrichtung
DE112019000166T5 (de) Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
DE112021000205T5 (de) Halbleitervorrichtung
DE112020002890T5 (de) Halbleitervorrichtung
DE112021004603T5 (de) Halbleitervorrichtung
DE112021001364B4 (de) Halbleitervorrichtung
DE102022129749A1 (de) Elektronische vorrichtung einschliesslich einer transistorstruktur
DE112022000977T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
DE112021004621T5 (de) Halbleitervorrichtung
DE112017003314T5 (de) Halbleitervorrichtung
DE112022000087T5 (de) Halbleitervorrichtung
DE102021123453A1 (de) Halbleitervorrichtung und deren Herstellungsverfahren

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029861000

Ipc: H10D0008000000

R016 Response to examination communication