JP6517030B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6517030B2 JP6517030B2 JP2015020195A JP2015020195A JP6517030B2 JP 6517030 B2 JP6517030 B2 JP 6517030B2 JP 2015020195 A JP2015020195 A JP 2015020195A JP 2015020195 A JP2015020195 A JP 2015020195A JP 6517030 B2 JP6517030 B2 JP 6517030B2
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- JP
- Japan
- Prior art keywords
- transistor
- layer
- oxide semiconductor
- region
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Liquid Crystal (AREA)
- Non-Volatile Memory (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015020195A JP6517030B2 (ja) | 2014-02-05 | 2015-02-04 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014020061 | 2014-02-05 | ||
| JP2014020061 | 2014-02-05 | ||
| JP2014041446 | 2014-03-04 | ||
| JP2014041446 | 2014-03-04 | ||
| JP2015020195A JP6517030B2 (ja) | 2014-02-05 | 2015-02-04 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019078321A Division JP2019165230A (ja) | 2014-02-05 | 2019-04-17 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015181151A JP2015181151A (ja) | 2015-10-15 |
| JP2015181151A5 JP2015181151A5 (ja) | 2018-03-15 |
| JP6517030B2 true JP6517030B2 (ja) | 2019-05-22 |
Family
ID=53755531
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015020195A Active JP6517030B2 (ja) | 2014-02-05 | 2015-02-04 | 半導体装置 |
| JP2019078321A Withdrawn JP2019165230A (ja) | 2014-02-05 | 2019-04-17 | 半導体装置の作製方法 |
| JP2019185357A Active JP6708777B2 (ja) | 2014-02-05 | 2019-10-08 | 半導体装置 |
| JP2019222787A Active JP6708779B2 (ja) | 2014-02-05 | 2019-12-10 | 半導体装置 |
| JP2021022356A Withdrawn JP2021077917A (ja) | 2014-02-05 | 2021-02-16 | 半導体装置 |
| JP2022069290A Withdrawn JP2022105053A (ja) | 2014-02-05 | 2022-04-20 | 半導体装置 |
| JP2024041017A Active JP7696469B2 (ja) | 2014-02-05 | 2024-03-15 | 半導体装置 |
| JP2025096874A Pending JP2025123279A (ja) | 2014-02-05 | 2025-06-10 | 半導体装置 |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019078321A Withdrawn JP2019165230A (ja) | 2014-02-05 | 2019-04-17 | 半導体装置の作製方法 |
| JP2019185357A Active JP6708777B2 (ja) | 2014-02-05 | 2019-10-08 | 半導体装置 |
| JP2019222787A Active JP6708779B2 (ja) | 2014-02-05 | 2019-12-10 | 半導体装置 |
| JP2021022356A Withdrawn JP2021077917A (ja) | 2014-02-05 | 2021-02-16 | 半導体装置 |
| JP2022069290A Withdrawn JP2022105053A (ja) | 2014-02-05 | 2022-04-20 | 半導体装置 |
| JP2024041017A Active JP7696469B2 (ja) | 2014-02-05 | 2024-03-15 | 半導体装置 |
| JP2025096874A Pending JP2025123279A (ja) | 2014-02-05 | 2025-06-10 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (7) | US9929279B2 (https=) |
| JP (8) | JP6517030B2 (https=) |
Families Citing this family (59)
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| KR102113160B1 (ko) * | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2015188062A (ja) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9640669B2 (en) | 2014-03-13 | 2017-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module |
| US10002971B2 (en) | 2014-07-03 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| TW201624708A (zh) * | 2014-11-21 | 2016-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置及記憶體裝置 |
| US9837547B2 (en) * | 2015-05-22 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide conductor and display device including the semiconductor device |
| CN106409919A (zh) * | 2015-07-30 | 2017-02-15 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| WO2017029576A1 (en) * | 2015-08-19 | 2017-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2017064590A1 (en) * | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6851166B2 (ja) | 2015-10-12 | 2021-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6821982B2 (ja) * | 2015-10-27 | 2021-01-27 | 天馬微電子有限公司 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| JPWO2017085591A1 (ja) | 2015-11-20 | 2018-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器 |
| CN108292684B (zh) | 2015-11-20 | 2022-06-21 | 株式会社半导体能源研究所 | 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置 |
| US10243010B2 (en) * | 2015-11-30 | 2019-03-26 | Sharp Kabushiki Kaisha | Semiconductor substrate and display device |
| JP2018032839A (ja) * | 2015-12-11 | 2018-03-01 | 株式会社半導体エネルギー研究所 | トランジスタ、回路、半導体装置、表示装置および電子機器 |
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| KR102448587B1 (ko) * | 2016-03-22 | 2022-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
| JP6863803B2 (ja) * | 2016-04-07 | 2021-04-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
| WO2017208119A1 (en) * | 2016-06-03 | 2017-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide and field-effect transistor |
| TW201804613A (zh) * | 2016-07-26 | 2018-02-01 | 聯華電子股份有限公司 | 氧化物半導體裝置 |
| TWI875538B (zh) | 2016-08-29 | 2025-03-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置及控制程式 |
| JP6736430B2 (ja) * | 2016-09-05 | 2020-08-05 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP6987188B2 (ja) * | 2016-09-05 | 2021-12-22 | 株式会社ジャパンディスプレイ | 半導体装置 |
| KR102403389B1 (ko) * | 2016-09-12 | 2022-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| CN106373967B (zh) * | 2016-10-27 | 2017-12-22 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
| CN107146816B (zh) * | 2017-04-10 | 2020-05-15 | 华南理工大学 | 一种氧化物半导体薄膜及由其制备的薄膜晶体管 |
| KR20190142344A (ko) * | 2017-04-28 | 2019-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US10446681B2 (en) | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
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| JP7161529B2 (ja) * | 2018-06-08 | 2022-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102507288B1 (ko) | 2018-09-13 | 2023-03-08 | 삼성전자주식회사 | 패드 영역을 갖는 게이트 패턴을 포함하는 반도체 소자 |
| WO2020053697A1 (ja) * | 2018-09-13 | 2020-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US10483287B1 (en) | 2018-09-21 | 2019-11-19 | Qualcomm Incorporated | Double gate, flexible thin-film transistor (TFT) complementary metal-oxide semiconductor (MOS) (CMOS) circuits and related fabrication methods |
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| KR102655208B1 (ko) * | 2018-12-21 | 2024-04-04 | 엘지디스플레이 주식회사 | 다층의 게이트 절연막을 갖는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
| CN113491006B (zh) * | 2019-02-28 | 2025-09-23 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
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| US20200052127A1 (en) | 2020-02-13 |
| US20230307547A1 (en) | 2023-09-28 |
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