JP6517030B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6517030B2 JP6517030B2 JP2015020195A JP2015020195A JP6517030B2 JP 6517030 B2 JP6517030 B2 JP 6517030B2 JP 2015020195 A JP2015020195 A JP 2015020195A JP 2015020195 A JP2015020195 A JP 2015020195A JP 6517030 B2 JP6517030 B2 JP 6517030B2
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- oxide semiconductor
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Non-Volatile Memory (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本実施の形態では、本発明の一態様のトランジスタについて図面を用いて説明する。
本実施の形態では、実施の形態1に示したトランジスタの構成要素について詳細を説明する。
本実施の形態では、本発明の一態様であるトランジスタに使用することができる酸化物半導体膜について説明する。
以下では、酸化物半導体の構造について説明する。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
本実施の形態では、本発明の一態様の表示装置について図面を用いて説明する。
本実施の形態では、本発明の一態様である表示装置に含まれるトランジスタについて説明する。
本実施の形態では、本発明の一態様のトランジスタを利用した表示装置の構成例について説明する。
図27(A)は、本発明の一態様の表示装置の上面図であり、図27(B)は、本発明の一態様の表示装置の画素に液晶素子を適用する場合に用いることができる画素回路を説明するための回路図である。また、図27(C)は、本発明の一態様の表示装置の画素に有機EL素子を適用する場合に用いることができる画素回路を説明するための回路図である。
また、画素の回路構成の一例を図27(B)に示す。ここでは、一例としてVA型液晶表示装置の画素に適用することができる画素回路を示す。
画素の回路構成の他の一例を図27(C)に示す。ここでは、有機EL素子を用いた表示装置の画素構造を示す。
本実施の形態では、本発明の一態様の半導体装置を適用した表示モジュールについて、図28を用いて説明を行う。
本実施の形態では、本発明の一態様のトランジスタを利用した回路の一例について図面を参照して説明する。
図29(A)に本発明の一態様の半導体装置の断面図を示す。図29(A)に示す半導体装置は、下部に第1の半導体材料を用いたトランジスタ2200を有し、上部に第2の半導体材料を用いたトランジスタ2100を有している。図29(A)では、第2の半導体材料を用いたトランジスタ2100として、先の実施の形態で例示したトランジスタを適用した例を示している。なお、一点鎖線より左側がトランジスタのチャネル長方向の断面、右側がチャネル幅方向の断面である。
上記構成において、トランジスタ2100やトランジスタ2200の電極の接続構成を異ならせることにより、様々な回路を構成することができる。以下では、本発明の一態様の半導体装置を用いることにより実現できる回路構成の例を説明する。
図29(B)に示す回路図は、pチャネル型のトランジスタ2200とnチャネル型のトランジスタ2100を直列に接続し、且つそれぞれのゲートを接続した、いわゆるCMOS回路の構成を示している。
また、図29(C)に示す回路図は、トランジスタ2100とトランジスタ2200のそれぞれのソースとドレインを接続した構成を示している。このような構成とすることで、いわゆるアナログスイッチとして機能させることができる。
本発明の一態様であるトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図30に示す。
本実施の形態では、先の実施の形態で説明したトランジスタ、または記憶装置を含むRFタグについて、図31を参照して説明する。
本実施の形態では、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本実施の形態では、本発明の一態様のトランジスタの変形例について、図34乃至図38を用いて説明する。
以下では、本発明の一態様のトランジスタの任意断面におけるバンド構造について説明する。
本実施の形態では、酸化物半導体層中の酸素欠損および当該酸素欠損に入る水素の効果について説明する。
酸化物半導体膜(以下、IGZOと示す。)が完全な結晶の場合、室温では、Hは、優先的にab面に沿って拡散する。また、450℃の加熱処理の際には、Hは、ab面及びc軸方向それぞれに拡散する。そこで、ここでは、IGZOに酸素欠損Voが存在する場合、Hは酸素欠損Vo中に入りやすいか否かについて説明する。ここで、酸素欠損Vo中にHがある状態をVoHと表記する。
IGZO中において酸素欠損VoとHが存在する場合、<(1). VoHの形成しやすさ及び安定性>で示した、NEB法を用いた計算より、酸素欠損VoとHはVoHを形成しやすく、さらにVoHは安定であるといえる。そこで、VoHがキャリアトラップに関与するかを調べるため、VoHの遷移レベルの算出を行った。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図46に示す。
本実施の形態では、本発明の一態様に係るRFタグの使用例について図47を用いながら説明する。RFタグの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図47(A)参照)、乗り物類(自転車等、図47(B)参照)、包装用容器類(包装紙やボトル等、図47(C)参照)、記録媒体(DVD(図47(D)参照)やビデオテープ等)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、若しくは各物品に取り付ける荷札(図47(E)、(F)参照)等に設けて使用することができる。
(実施の形態16)
以下では、CAAC−OSおよびnc−OSの成膜モデルについて説明する。
以下では、CAAC−OSの成膜モデルにおいて記載のターゲットの劈開面について説明する。
102 トランジスタ
103 トランジスタ
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
108 トランジスタ
109 トランジスタ
110 基板
120 絶縁層
130 酸化物半導体層
130a 酸化物半導体層
130b 酸化物半導体層
130B 酸化物半導体膜
130c 酸化物半導体層
130C 酸化物半導体膜
140 ソース電極層
141 導電層
142 導電層
150 ドレイン電極層
151 導電層
152 導電層
160 ゲート絶縁膜
160a 絶縁膜
170 ゲート電極層
171 導電層
171a 導電膜
172 導電層
172a 導電膜
175 絶縁層
180 絶縁層
185 絶縁層
190 絶縁層
231 領域
232 領域
233 領域
304 回路部
331 領域
332 領域
333 領域
334 領域
335 領域
400 基板
401 絶縁層
402 絶縁層
402a 絶縁層
402b 絶縁層
404 導電層
404a 導電層
404b 導電層
406 半導体層
406a 半導体層
406b 半導体層
407a 領域
407a1 領域
407a2 領域
407b 領域
407b1 領域
407b2 領域
408 絶縁層
412 絶縁層
414 導電層
414a 導電層
414b 導電層
416a 導電層
416a1 導電層
416a2 導電層
416b 導電層
416b1 導電層
416b2 導電層
418 絶縁層
428 絶縁層
500 表示装置
500a 液晶表示装置
500b EL表示装置
501 基板
502 画素部
504 回路部
505 回路部
507 基板
508 FPC端子部
510 信号線
511 配線部
512 シール材
516 FPC
530 絶縁膜
534 絶縁膜
536 着色層
538 遮光層
550 トランジスタ
552 トランジスタ
560 接続電極
570 平坦化絶縁膜
572 導電膜
574 導電膜
575 液晶素子
576 液晶層
578 スペーサ
580 異方性導電膜
610 素子層
611 素子層
632 封止層
644 導電膜
646 EL層
648 導電膜
680 発光素子
700 基板
701 画素部
702 走査線駆動回路
703 走査線駆動回路
704 信号線駆動回路
710 容量配線
712 ゲート配線
713 ゲート配線
714 データ線
716 トランジスタ
717 トランジスタ
718 液晶素子
719 液晶素子
720 画素
721 スイッチング用トランジスタ
722 駆動用トランジスタ
723 容量素子
724 発光素子
725 信号線
726 走査線
727 電源線
728 共通電極
751 基板
753 絶縁層
753a 絶縁層
753b 絶縁層
755 酸化物半導体層
755a チャネル領域
755b 低抵抗領域
755c 低抵抗領域
755d 領域
755e 領域
755f 低抵抗領域
755g 低抵抗領域
755h 低抵抗領域
755i 低抵抗領域
757 絶縁層
757a 絶縁層
757b 絶縁層
759 導電層
759a 導電層
759b 導電層
765 窒化物絶縁層
767 絶縁層
768 導電層
769 導電層
775 絶縁層
800 RFタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
821 レジストマスク
822 レジストマスク
823 レジストマスク
824 レジストマスク
830 不純物
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 表示部
933 リストバンド
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2100 トランジスタ
2200 トランジスタ
2201 絶縁膜
2202 配線
2203 プラグ
2204 絶縁膜
2205 配線
2206 配線
2207 絶縁膜
2208 ブロック膜
2211 半導体基板
2212 絶縁膜
2213 ゲート電極
2214 ゲート絶縁膜
2215 ドレイン領域
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4000 RFタグ
5100 ペレット
5100a ペレット
5100b ペレット
5101 イオン
5120 基板
5130 ターゲット
5161 領域
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (2)
- 第1の領域と、第2の領域と、前記第1の領域と前記第2の領域の間の第3の領域とを有する酸化物半導体層と、
前記酸化物半導体層上の第1の絶縁層と、
前記第1の絶縁層上に位置し、前記第3の領域と重なるゲート電極と、を有するトランジスタを有し、
前記酸化物半導体上及びゲート電極上の第2の絶縁層と、
前記第2の絶縁層上に位置し、前記第1の領域と接する領域を有する第1の電極と、
前記第2の絶縁層上に位置し、前記第2の領域と接する領域を有する第2の電極と、を有し、
前記第3の領域は、前記第1の絶縁層と接する部分を有し、
前記第1の領域は、前記第2の絶縁層と接する部分を有し、
前記第1の領域において前記第2の絶縁層と接する部分の炭素濃度は、前記第3の領域において前記第1の絶縁層と接する部分の炭素濃度よりも高く、
前記第1の領域において前記第2の絶縁層と接する部分の水素濃度は、前記第3の領域において前記第1の絶縁層と接する部分の水素濃度よりも高い、半導体装置。 - 第1乃至第5の領域を有する酸化物半導体層と、
前記酸化物半導体層上の第1の絶縁層と、
前記第1の絶縁層上に位置し、前記第3の領域と重なるゲート電極と、を有するトランジスタを有し、
前記第1の領域上に接する第1の導電層と、
前記第2の領域上に接する第2の導電層と、
前記第1の導電層上、前記第2の導電層上及び前記ゲート電極上の第2の絶縁層と、を有し、
前記第4の領域は、前記第1の領域と前記第3の領域の間に位置し、
前記第5の領域は、前記第2の領域と前記第3の領域の間に位置し、
前記第1の絶縁層は、前記第3の領域と接する領域を有し、
前記第2の絶縁層は、前記第4の領域と接する領域と、前記第5の領域と接する領域とを有し、
前記第4の領域の炭素濃度は、前記第3の領域の炭素濃度よりも高く、
前記第4の領域の水素濃度は、前記第3の領域の水素濃度よりも高い、半導体装置。
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US9929279B2 (en) | 2018-03-27 |
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US11011648B2 (en) | 2021-05-18 |
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