JP6411820B2 - 半導体装置および半導体装置の作製方法 - Google Patents

半導体装置および半導体装置の作製方法 Download PDF

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JP6411820B2
JP6411820B2 JP2014178827A JP2014178827A JP6411820B2 JP 6411820 B2 JP6411820 B2 JP 6411820B2 JP 2014178827 A JP2014178827 A JP 2014178827A JP 2014178827 A JP2014178827 A JP 2014178827A JP 6411820 B2 JP6411820 B2 JP 6411820B2
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oxide semiconductor
semiconductor layer
layer
oxide
insulating layer
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JP2015073093A5 (enExample
JP2015073093A (ja
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山元　良高
良高 山元
哲弘 田中
哲弘 田中
卓之 井上
卓之 井上
英臣 須澤
英臣 須澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2014178827A 2013-09-04 2014-09-03 半導体装置および半導体装置の作製方法 Expired - Fee Related JP6411820B2 (ja)

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