JP5025754B2 - 半導体記憶素子、及び半導体記憶装置 - Google Patents
半導体記憶素子、及び半導体記憶装置 Download PDFInfo
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- JP5025754B2 JP5025754B2 JP2010084332A JP2010084332A JP5025754B2 JP 5025754 B2 JP5025754 B2 JP 5025754B2 JP 2010084332 A JP2010084332 A JP 2010084332A JP 2010084332 A JP2010084332 A JP 2010084332A JP 5025754 B2 JP5025754 B2 JP 5025754B2
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- Prior art keywords
- charge storage
- insulating film
- film
- storage film
- semiconductor memory
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- 238000003860 storage Methods 0.000 claims description 239
- 239000000463 material Substances 0.000 claims description 89
- 239000002245 particle Substances 0.000 claims description 80
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- 230000007423 decrease Effects 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 38
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- 238000000034 method Methods 0.000 description 43
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- 238000004519 manufacturing process Methods 0.000 description 11
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- BMQOJZRWRYIBEA-UHFFFAOYSA-J hafnium(4+);octanoate Chemical compound [Hf+4].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O BMQOJZRWRYIBEA-UHFFFAOYSA-J 0.000 description 1
- SEKCULWEIYBRLO-UHFFFAOYSA-N hafnium(4+);propan-1-olate Chemical compound [Hf+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] SEKCULWEIYBRLO-UHFFFAOYSA-N 0.000 description 1
- HRDRRWUDXWRQTB-UHFFFAOYSA-N hafnium(4+);propan-2-olate Chemical compound [Hf+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] HRDRRWUDXWRQTB-UHFFFAOYSA-N 0.000 description 1
- ZFMIEZYJPABXSU-UHFFFAOYSA-J hafnium(4+);tetraacetate Chemical compound [Hf+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O ZFMIEZYJPABXSU-UHFFFAOYSA-J 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 238000002365 hybrid physical--chemical vapour deposition Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 125000005609 naphthenate group Chemical group 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-M octanoate Chemical compound CCCCCCCC([O-])=O WWZKQHOCKIZLMA-UHFFFAOYSA-M 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 229940070710 valerate Drugs 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Description
(第1の実施形態)
続いて、犠牲層の表面にハフニウム酸化物(HfO2)からなる電荷蓄積膜16を形成する。電荷蓄積膜16は、ハフニウム(Hf)原子を含む分子、及び酸素(O)原子を含む分子を混合して形成する。
酸素原子を含む分子としては、例えばO2、NO、NO2、N2O、O3、CO、CO2、H2O2、及びアルコール類などの材料を用いることができる。なお、上記した中でもO2、O3、H2O2、又はアルコール類などの材料を混合させた用いることが好ましい。
(実施例1)
(第2の実施形態)
ブロック絶縁膜15の材料には、例えばSiO2を用いる。そして、電荷蓄積膜16の材料には、例えばHfSiOを用いる。このとき、電荷蓄積膜16を構成するHfSiOのHfは立方晶ハフニア粒子に寄与するために、電荷蓄積膜16の立方晶ハフニア粒子が形成されていない領域はHfが少ない状態になっている。すなわち、ブロック絶縁膜15と立方晶ハフニア粒子を除いた電荷蓄積膜16との主な成分はSiとOとなっている。
(第3の実施形態)
(第4の実施形態)
(第5の実施形態)
(第6の実施形態)
(第7の実施形態)
(第8の実施形態)
Claims (9)
- 半導体層と、
前記半導体層上に設けられたトンネル絶縁膜と、
前記トンネル絶縁膜上に設けられ、膜厚が0.9nm以上2.8nm以下であり、立方晶ハフニア粒子を含む電荷蓄積膜と、
前記電荷蓄積膜上に設けられたブロック絶縁膜と、
前記ブロック絶縁膜上に設けられた制御電極とを備えることを特徴とする半導体記憶素子。 - 前記立方晶ハフニア粒子が価数が+3価のSiを含み、かつ前記電荷蓄積膜がSiとOを含むことを特徴とする請求項1に記載の半導体記憶素子。
- 前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子を隔てる材料の成分が、前記トンネル絶縁膜又は前記ブロック絶縁膜の何れかに含まれる材料の成分と同じであることを特徴とする請求項1に記載の半導体記憶素子。
- 前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子が前記電荷蓄積膜の層厚の中心から前記トンネル絶縁膜側に寄っており、前記ブロック絶縁膜に含まれる材料の成分が前記電荷蓄積膜側に向かって減少し、前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子を隔てる材料の成分が前記ブロック絶縁膜側に向かって減少していることを特徴とする請求項1に記載の半導体記憶素子。
- 前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子が前記電荷蓄積膜の層厚の中心から前記ブロック絶縁膜側に寄っており、前記トンネル絶縁膜に含まれる材料の成分が前記電荷蓄積膜側に向かって減少し、前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子を隔てる材料の成分が前記トンネル絶縁膜側に向かって減少していることを特徴とする請求項1に記載の半導体記憶素子。
- 前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子を隔てる材料の成分が、前記トンネル絶縁膜及び前記ブロック絶縁膜に含まれる材料の成分と同じであることを特徴とする請求項1に記載の半導体記憶素子。
- 前記トンネル絶縁膜に含まれる材料の成分が前記電荷蓄積膜側に向かって減少し、前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子を隔てる材料の成分が前記トンネル絶縁膜側に向かって減少し、前記ブロック絶縁膜に含まれる材料の成分が前記電荷蓄積膜側に向かって減少し、前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子を隔てる材料の成分が前記ブロック絶縁膜側に向かって減少していることを特徴とする請求項1に記載の半導体記憶素子。
- 前記電荷蓄積膜に含まれる前記立方晶ハフニア粒子の面内密度が0.040個/nm2以上0.945個/nm2以下であることを特徴とする請求項1に記載の半導体記憶素子。
- 絶縁膜と制御電極とが交互に基板上に積層された積層体と、
前記積層体が積層された方向に対して、前記積層体の上面から最下層の前記制御電極にまで貫通して設けられた孔の側面に設けられたブロック絶縁膜と、
前記ブロック絶縁膜の内面に設けられ、膜厚が0.9nm以上2.8nm以下であり、立方晶ハフニア粒子を含む電荷蓄積膜と、
前記電荷蓄積膜の内面に設けられたトンネル絶縁膜と、
前記トンネル絶縁膜の内面に設けられた半導体層とを備えることを特徴とする半導体記憶装置。
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US12/880,748 US8390054B2 (en) | 2010-03-31 | 2010-09-13 | Semiconductor memory element and semiconductor memory device |
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JP5531259B2 (ja) | 2009-03-19 | 2014-06-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2013187362A (ja) | 2012-03-08 | 2013-09-19 | Toshiba Corp | 不揮発性半導体記憶装置 |
US9449853B2 (en) * | 2013-09-04 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising electron trap layer |
JP6393104B2 (ja) * | 2013-09-05 | 2018-09-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6509514B2 (ja) * | 2014-09-17 | 2019-05-08 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
JP6683370B2 (ja) * | 2014-10-15 | 2020-04-22 | 学校法人東京理科大学 | カリウムイオン二次電池用負極又はカリウムイオンキャパシタ用負極、カリウムイオン二次電池又はカリウムイオンキャパシタ及びカリウムイオン二次電池負極用又はカリウムイオンキャパシタ負極用の結着剤 |
JP6010172B2 (ja) * | 2015-04-06 | 2016-10-19 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2017168708A (ja) * | 2016-03-17 | 2017-09-21 | 東芝メモリ株式会社 | 半導体記憶装置 |
KR102549452B1 (ko) * | 2016-03-31 | 2023-06-30 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
SG10201803464XA (en) | 2017-06-12 | 2019-01-30 | Samsung Electronics Co Ltd | Semiconductor memory device and method of manufacturing the same |
US10727244B2 (en) | 2017-06-12 | 2020-07-28 | Samsung Electronics Co., Ltd. | Semiconductor memory devices and methods of fabricating the same |
US10403634B2 (en) | 2017-06-12 | 2019-09-03 | Samsung Electronics Co., Ltd | Semiconductor memory device and method of manufacturing the same |
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US20060125027A1 (en) * | 2004-12-10 | 2006-06-15 | National Applied Research Laboratories | Nonvolatile flash memory with HfO2 nanocrystal |
US7611972B2 (en) * | 2006-11-29 | 2009-11-03 | Qimonda North America Corp. | Semiconductor devices and methods of manufacture thereof |
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US8159012B2 (en) * | 2007-09-28 | 2012-04-17 | Samsung Electronics Co., Ltd. | Semiconductor device including insulating layer of cubic system or tetragonal system |
JP5208538B2 (ja) | 2008-02-21 | 2013-06-12 | 株式会社東芝 | 半導体記憶素子 |
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