JP6356541B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6356541B2 JP6356541B2 JP2014176892A JP2014176892A JP6356541B2 JP 6356541 B2 JP6356541 B2 JP 6356541B2 JP 2014176892 A JP2014176892 A JP 2014176892A JP 2014176892 A JP2014176892 A JP 2014176892A JP 6356541 B2 JP6356541 B2 JP 6356541B2
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- film
- oxide semiconductor
- transistor
- semiconductor film
- insulating film
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Images
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本実施の形態では、本発明の一態様の半導体装置について図面を用いて説明する。
また、図5(A)に示すトランジスタのようにソース電極110aおよびドレイン電極110bと電気的に接続し、配線として機能する導電膜118aおよび導電膜118bを酸化物絶縁膜116上に設けてもよい。導電膜118aおよび導電膜118bは、他のトランジスタやキャパシタなどの素子と電気的に接続されていてもよい。
また、図10に示すトランジスタのように酸化物半導体膜108a上にチャネル保護膜128を設けてもよい。チャネル保護膜128を設けることで酸化物半導体膜108aがエッチングガスに曝されず、酸化物半導体膜108aおよびチャネル保護膜128の間の不純物を低減できる。この結果、トランジスタのソース電極およびドレイン電極の間に流れるリーク電流を低減することができる。
本実施の形態では、実施の形態1とは異なる半導体装置について図面を用いて説明する。
本実施の形態では、本発明の一態様のトランジスタを利用した回路の一例について図面を参照して説明する。
図11(A)に本発明の一態様の半導体装置の断面図を示す。図11(A)に示す半導体装置は、下部に第1の半導体材料を用いたトランジスタ2200を有し、上部に第2の半導体材料を用いたトランジスタ2100を有している。図11(A)では、第2の半導体材料を用いたトランジスタ2100として、実施の形態1で例示したトランジスタを適用した例を示している。
上記構成において、トランジスタ2100やトランジスタ2200の電極の接続構成を異ならせることにより、様々な回路を構成することができる。以下では、本発明の一態様の半導体装置を用いることにより実現できる回路構成の例を説明する。
図11(B)に示す回路図は、pチャネル型のトランジスタ2200とnチャネル型のトランジスタ2100を直列に接続し、且つそれぞれのゲートを接続した、いわゆるCMOS回路の構成を示している。
また、図11(C)に示す回路図は、トランジスタ2100とトランジスタ2200のそれぞれのソースとドレインを接続した構成を示している。このような構成とすることで、いわゆるアナログスイッチとして機能させることができる。
本発明の一態様であるトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図12に示す。
本実施の形態では、先の実施の形態で説明したトランジスタ、または記憶装置を含むRFタグについて、図13を参照して説明する。
本実施の形態では、少なくとも上記の実施の形態で説明したトランジスタを用いることができ、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本実施の形態では、本発明の一態様の表示パネルの構成例について説明する。
図19(A)は、本発明の一態様の表示パネルの上面図であり、図19(B)は、本発明の一態様の表示パネルの画素に液晶素子を適用する場合に用いることができる画素回路を説明するための回路図である。また、図19(C)は、本発明の一態様の表示パネルの画素に有機EL素子を適用する場合に用いることができる画素回路を説明するための回路図である。
また、画素の回路構成の一例を図19(B)に示す。ここでは、VA型液晶表示パネルの画素に適用することができる画素回路を示す。
画素の回路構成の他の一例を図19(C)に示す。ここでは、有機EL素子を用いた表示パネルの画素構造を示す。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図16に示す。
本実施の形態では、本発明の一態様に係るRFデバイスの使用例について図17を用いながら説明する。RFデバイスの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図17(A)参照)、記録媒体(DVDやビデオテープ等、図17(B)参照)、包装用容器類(包装紙やボトル等、図17(C)参照)、乗り物類(自転車等、図17(D)参照)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、若しくは各物品に取り付ける荷札(図17(E)、図17(F)参照)等に設けて使用することができる。
102 下地絶縁膜
104a 導電膜
104b 導電膜
104c 導電膜
105 層間絶縁膜
106 層間絶縁膜
108a 酸化物半導体膜
108a1 酸化物半導体膜
108a2 酸化物半導体膜
108a3 酸化物半導体膜
108b ブロッキング膜
108b1 ブロッキング膜
108b2 ブロッキング膜
108c ブロッキング膜
108c1 ブロッキング膜
108c2 ブロッキング膜
110a ソース電極
110b ドレイン電極
112 ゲート絶縁膜
114 ゲート電極
116 酸化物絶縁膜
118a 導電膜
118b 導電膜
120a 開口部
120b 開口部
128 チャネル保護膜
150 トランジスタ
250 トランジスタ
700 基板
701 画素部
702 走査線駆動回路
703 走査線駆動回路
704 信号線駆動回路
710 容量配線
712 ゲート配線
713 ゲート配線
714 ドレイン電極層
716 トランジスタ
717 トランジスタ
718 液晶素子
719 液晶素子
720 画素
721 スイッチング用トランジスタ
722 駆動用トランジスタ
723 容量素子
724 発光素子
725 信号線
726 走査線
727 電源線
728 共通電極
800 RFタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 第1筐体
912 第2筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 第1筐体
942 第2筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2100 トランジスタ
2200 トランジスタ
2201 絶縁膜
2202 配線
2203 プラグ
2204 絶縁膜
2205 配線
2206 配線
2207 絶縁膜
2208 絶縁膜
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4000 RFデバイス
Claims (5)
- 酸化物半導体膜及び金属酸化物膜と、
前記酸化物半導体膜と電気的に接続されたソース電極およびドレイン電極と、
前記酸化物半導体膜、前記ソース電極および前記ドレイン電極と接するゲート絶縁膜と、
前記ゲート絶縁膜と接するゲート電極と、を有し、
前記金属酸化物膜は、前記酸化物半導体膜と同一表面上に形成され、
前記金属酸化物膜は、前記酸化物半導体膜と接せず、
前記金属酸化物膜は、前記酸化物半導体膜と同一材料で形成され、
前記金属酸化物膜は、前記酸化物半導体膜より導電性が高いことを特徴とする半導体装置。 - 酸化物半導体膜及び金属酸化物膜と、
前記酸化物半導体膜と電気的に接続されたソース電極およびドレイン電極と、
前記酸化物半導体膜、前記ソース電極および前記ドレイン電極と接するゲート絶縁膜と、
前記ゲート絶縁膜と接するゲート電極と、を有し、
前記金属酸化物膜は、前記酸化物半導体膜と同一表面上に形成され、
前記金属酸化物膜は、前記酸化物半導体膜と接せず、
前記金属酸化物膜は、前記酸化物半導体膜と同一材料で形成され、
前記金属酸化物膜は、前記酸化物半導体膜より水素濃度が高い領域を有することを特徴とする半導体装置。 - 請求項1または請求項2において、
前記酸化物半導体膜及び前記金属酸化物膜は、開口部を有する絶縁膜と接する領域を有し、
前記金属酸化物膜は、前記酸化物半導体膜と前記開口部との間に形成されていることを特徴とする半導体装置。 - 請求項1または請求項2において、
前記酸化物半導体膜及び前記金属酸化物膜は、開口部を有する絶縁膜と接する領域を有し、
前記金属酸化物膜と前記酸化物半導体膜との距離は、前記開口部と前記酸化物半導体膜との距離より短いことを特徴とする半導体装置。 - 請求項1乃至請求項4において、
前記絶縁膜は、前記酸化物半導体膜の下面、及び前記金属酸化物膜の下面と接し、
前記絶縁膜の下に第1のトランジスタを有し、
前記第1のトランジスタは、半導体材料を含む基板上に形成され、且つ前記開口部を介して前記ソース電極または前記ドレイン電極と電気的に接続されたことを特徴とする半導体装置。
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KR102294507B1 (ko) | 2021-08-30 |
US20150069383A1 (en) | 2015-03-12 |
JP6968139B2 (ja) | 2021-11-17 |
TWI693720B (zh) | 2020-05-11 |
US9391157B2 (en) | 2016-07-12 |
JP2018174339A (ja) | 2018-11-08 |
KR20150028721A (ko) | 2015-03-16 |
JP2020036043A (ja) | 2020-03-05 |
TWI632682B (zh) | 2018-08-11 |
JP2015073089A (ja) | 2015-04-16 |
JP7247303B2 (ja) | 2023-03-28 |
JP6811745B2 (ja) | 2021-01-13 |
TW201513366A (zh) | 2015-04-01 |
JP2022017385A (ja) | 2022-01-25 |
TW201834254A (zh) | 2018-09-16 |
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