JP2015144267A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2015144267A JP2015144267A JP2014260058A JP2014260058A JP2015144267A JP 2015144267 A JP2015144267 A JP 2015144267A JP 2014260058 A JP2014260058 A JP 2014260058A JP 2014260058 A JP2014260058 A JP 2014260058A JP 2015144267 A JP2015144267 A JP 2015144267A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- film
- layer
- semiconductor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 696
- 239000003990 capacitor Substances 0.000 claims description 122
- 229910052760 oxygen Inorganic materials 0.000 claims description 102
- 239000001301 oxygen Substances 0.000 claims description 101
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 98
- 229910052739 hydrogen Inorganic materials 0.000 claims description 66
- 239000001257 hydrogen Substances 0.000 claims description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 229910001868 water Inorganic materials 0.000 claims description 37
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000010408 film Substances 0.000 description 796
- 239000010410 layer Substances 0.000 description 688
- 238000000034 method Methods 0.000 description 151
- 239000013078 crystal Substances 0.000 description 132
- 239000008188 pellet Substances 0.000 description 120
- 230000004888 barrier function Effects 0.000 description 103
- 239000000758 substrate Substances 0.000 description 97
- 239000000463 material Substances 0.000 description 83
- 238000010438 heat treatment Methods 0.000 description 71
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 56
- 230000006870 function Effects 0.000 description 47
- 230000015572 biosynthetic process Effects 0.000 description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 229910052710 silicon Inorganic materials 0.000 description 36
- 239000010703 silicon Substances 0.000 description 36
- 239000011701 zinc Substances 0.000 description 35
- 239000012535 impurity Substances 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 32
- 239000000523 sample Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 29
- 238000004544 sputter deposition Methods 0.000 description 25
- 239000000203 mixture Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 238000005229 chemical vapour deposition Methods 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 238000000231 atomic layer deposition Methods 0.000 description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 19
- 238000004458 analytical method Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 19
- 238000002003 electron diffraction Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 19
- 229910052719 titanium Inorganic materials 0.000 description 19
- 239000010936 titanium Substances 0.000 description 19
- 229910052721 tungsten Inorganic materials 0.000 description 19
- 239000010937 tungsten Substances 0.000 description 19
- 125000004429 atom Chemical group 0.000 description 17
- 238000005530 etching Methods 0.000 description 17
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 17
- 239000002245 particle Substances 0.000 description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 17
- 230000007547 defect Effects 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 15
- 229910052738 indium Inorganic materials 0.000 description 15
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 238000004549 pulsed laser deposition Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 13
- 238000003795 desorption Methods 0.000 description 13
- 238000001451 molecular beam epitaxy Methods 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 239000011733 molybdenum Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 11
- 239000004020 conductor Substances 0.000 description 11
- 238000012916 structural analysis Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 10
- -1 copper-magnesium-aluminum Chemical compound 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 10
- 125000004430 oxygen atom Chemical group O* 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 238000003917 TEM image Methods 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 9
- 229910007541 Zn O Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 238000002524 electron diffraction data Methods 0.000 description 9
- 150000002431 hydrogen Chemical class 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 239000002159 nanocrystal Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 208000005156 Dehydration Diseases 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000005264 electron capture Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229960001730 nitrous oxide Drugs 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 238000006213 oxygenation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229940127554 medical product Drugs 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
Description
[積層構造の構成例]
以下では、本発明の一態様の半導体装置に適用することのできる積層構造の一例を図1を用いて説明する。
図5(A)は、本発明の一態様の半導体装置の回路図の一例である。図5(A)に示す半導体装置は、トランジスタ100と、トランジスタ130と、容量素子150と、配線BLと、配線WLと、配線CLとを有する。
トランジスタ130は、半導体基板131に設けられ、半導体基板131の一部からなる半導体層132、ゲート絶縁膜134、ゲート電極135、及びソース領域またはドレイン領域として機能する低抵抗層133a及び低抵抗層133bを有する。また、図6に示す半導体装置はトランジスタ160を有してもよい。トランジスタ160はトランジスタ130とともに半導体基板131に設けられている。
トランジスタ130と、トランジスタ100の間には、バリア膜111が設けられている。バリア膜は単層でもよく、図6に示すように複数層でもよい。ここで、図6(A)に示す半導体装置の例では、バリア膜111a乃至バリア膜111eの5層のバリア膜を有する。バリア膜を容量素子の絶縁膜に用いる場合には、膜厚を薄くすることにより容量を高めることができる。一方、薄くすることによりバリア性が低下してしまう恐れがある。よって、薄いバリア膜を複数積層することにより、容量をより高め、かつバリア性を向上させることができ、トランジスタ100およびトランジスタ130の特性を高めることができる。
絶縁膜114の上部には、トランジスタ100の半導体層101が設けられている。
以下では、上記構成例で示した半導体装置の作製方法の一例について、図8乃至図12の断面図を用いて説明する。
本実施の形態では、実施の形態1に示すトランジスタ100に好適に用いることのできる酸化物半導体について説明する。
以下では、CAAC−OSおよびnc−OSの成膜モデルの一例について説明する。
本実施の形態では、本発明の一態様のトランジスタを利用した回路の一例について図面を参照して説明する。
実施の形態1に示した構成において、トランジスタや配線、電極の接続構成を異ならせることにより、様々な回路を構成することができる。以下では、本発明の一態様の半導体装置を用いることにより実現できる回路構成の例を説明する。
図22(A)に示す回路図は、pチャネル型のトランジスタ2200とnチャネル型のトランジスタ2100を直列に接続し、且つそれぞれのゲートを接続した、いわゆるCMOS回路の構成を示している。なお図中、第2の半導体材料が適用されたトランジスタには「OS」の記号を付して示している。
また図22(B)に示す回路図は、トランジスタ2100とトランジスタ2200のそれぞれのソースとドレインを接続した構成を示している。このような構成とすることで、いわゆるアナログスイッチとして機能させることができる。
本発明の一態様であるトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、且つ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図22に示す。
本実施の形態では、本発明の一態様であるトランジスタを使用した半導体装置の一例について、図面を用いて説明する。図29は、本発明の一態様に係る半導体装置の回路図の一例である。
本実施の形態では、上記実施の形態で例示したトランジスタ、または記憶装置を含むRFタグについて、図23を用いて説明する。
本実施の形態では、少なくとも実施の形態で説明したトランジスタを用いることができ、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本実施の形態では、本発明の一態様の表示パネルの構成例について説明する。
図26(A)は、本発明の一態様の表示パネルの上面図であり、図26(B)は、本発明の一態様の表示パネルの画素に液晶素子を適用する場合に用いることができる画素回路を説明するための回路図である。また、図26(C)は、本発明の一態様の表示パネルの画素に有機EL素子を適用する場合に用いることができる画素回路を説明するための回路図である。
また、画素の回路構成の一例を図26(B)に示す。ここでは、VA型液晶表示パネルの画素に適用することができる画素回路を示す。
画素の回路構成の他の一例を図26(C)に示す。ここでは、有機EL素子を用いた表示パネルの画素構造を示す。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図27に示す。
本実施の形態では、本発明の一態様に係るRFタグの使用例について図28を用いながら説明する。RFタグの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図28(A)参照)、包装用容器類(包装紙やボトル等、図28(C)参照)、記録媒体(DVDやビデオテープ等、図28(B)参照)、乗り物類(自転車等、図28(D)参照)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、若しくは各物品に取り付ける荷札(図28(E)、図28(F)参照)等に設けて使用することができる。
628 物質
100 トランジスタ
101 半導体層
101a 半導体層
101b 半導体層
101c 半導体層
102 ゲート絶縁膜
103 ゲート電極
104a 導電層
104b 導電層
105 導電層
111 バリア膜
111a バリア膜
111b バリア膜
111c バリア膜
111d バリア膜
111e バリア膜
111f バリア膜
111g バリア膜
112 絶縁膜
113 絶縁膜
114 絶縁膜
115a 絶縁膜
115b 絶縁膜
115c 絶縁膜
115d 絶縁膜
115e 絶縁膜
116 絶縁膜
121 プラグ
122 プラグ
123 プラグ
124 配線
125 導電層
126 プラグ
127 プラグ
128 プラグ
129a プラグ
129b プラグ
129c プラグ
129d プラグ
130 トランジスタ
131 半導体基板
132 半導体層
133a 低抵抗層
133b 低抵抗層
134 ゲート絶縁膜
135 ゲート電極
136 絶縁膜
137 絶縁膜
138 絶縁膜
139 プラグ
140 プラグ
141 プラグ
142 配線
143 導電層
144 導電層
145 プラグ
146 導電層
147 プラグ
150 容量素子
151 導電層
152 導電層
152b 導電層
153a 導電層
153b 導電層
154a 導電層
154b 導電層
154c 導電層
154d 導電層
154e 導電層
160 トランジスタ
164 プラグ
165 プラグ
166 配線
176a 領域
176b 領域
171a 低抵抗領域
171b 低抵抗領域
181 導電膜
190 トランジスタ
191 トランジスタ
211a バリア膜
211b バリア膜
211c バリア膜
211d バリア膜
211e バリア膜
211f バリア膜
215a 絶縁膜
215b 絶縁膜
215c 絶縁膜
215d 絶縁膜
215e 絶縁膜
215f 絶縁膜
251 導電層
251a 導電層
251b 導電層
251c 導電層
251d 導電層
251e 導電層
261 絶縁膜
281 層
282 層
283 層
284 層
285 層
286 層
287 層
288 層
289 層
290 層
291 層
292 層
293 層
294 層
295 層
321 プラグ
322 プラグ
610 電子銃室
612 光学系
614 試料室
616 光学系
618 カメラ
620 観察室
622 フィルム室
632 蛍光板
660a 容量素子
660b 容量素子
661a トランジスタ
661b トランジスタ
662a トランジスタ
662b トランジスタ
663a インバータ
663b インバータ
700 基板
701 画素部
702 走査線駆動回路
703 走査線駆動回路
704 信号線駆動回路
710 容量配線
712 ゲート配線
713 ゲート配線
714 ドレイン電極層
716 トランジスタ
717 トランジスタ
718 液晶素子
719 液晶素子
720 画素
721 スイッチング用トランジスタ
722 駆動用トランジスタ
723 容量素子
724 発光素子
725 信号線
726 走査線
727 電源線
728 共通電極
800 RFタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2100 トランジスタ
2200 トランジスタ
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4000 RFタグ
5100 ペレット
5100a ペレット
5100b ペレット
5101 イオン
5102 酸化亜鉛層
5103 粒子
5105a ペレット
5105a1 領域
5105a2 ペレット
5105b ペレット
5105c ペレット
5105d ペレット
5105d1 領域
5105e ペレット
5120 基板
5130 ターゲット
5161 領域
Claims (8)
- 容量素子と、第1のトランジスタと、を有し、
前記第1のトランジスタは第1の半導体層を有し、
前記第1の半導体層は前記容量素子の上方に位置し、
前記容量素子は前記第1のトランジスタと電気的に接続する第1の電極を有する半導体装置。 - 請求項1において、
前記容量素子は、m層(mは3以上の自然数)の導電層およびn層(nは自然数)の絶縁膜を有し、
第1の絶縁膜は、第1の導電層と第2の導電層とに挟まれ、
第2の絶縁膜は、前記第2の導電層と第3の導電層とに挟まれ、
前記第1の導電層と前記第3の導電層は電気的に接続する半導体装置。 - 容量素子と、第1のトランジスタと、第2のトランジスタと、を有し、
前記容量素子はn層(nは自然数)の絶縁膜と、k層(kは2以上の自然数)の導電層と、を有し、
前記n層の絶縁膜のそれぞれは、少なくとも2層の導電層により挟まれ、
前記第1のトランジスタは、前記第2のトランジスタの上方に位置し、
前記第1のトランジスタは第1の半導体層を有し、
前記第1の半導体層は前記容量素子の上方に位置し、
前記容量素子が有する前記n層の絶縁膜は、前記第1のトランジスタと、前記第2のトランジスタとの間に位置し、 前記容量素子は前記第1のトランジスタのソースまたはドレインのいずれかと接続する第1の電極を有する半導体装置。 - 請求項2または請求項3のいずれか一項において、
前記n層の絶縁膜は、水素、水、および酸素の少なくともいずれかをブロックする機能を有する半導体装置。 - 請求項4において、
前記n層の絶縁膜は、窒化シリコン、窒化酸化シリコン、酸化アルミニウム、酸化窒化アルミニウム、酸化ガリウム、酸化窒化ガリウム、酸化イットリウム、酸化窒化イットリウム、酸化ハフニウム、酸化窒化ハフニウムのうち、少なくとも一を含む半導体装置。 - 請求項1乃至請求項5のいずれか一項において、
前記容量素子と、前記第1のトランジスタとが重なる半導体装置。 - 請求項1乃至請求項6のいずれか一項において、
前記第1のトランジスタは、前記第1の半導体層に第1の開口部が設けられ、
前記第1の電極は、前記第1の開口部に接する、
半導体装置。 - 請求項1乃至請求項6のいずれか一項において、
前記第1のトランジスタは、第1の導電層および第2の導電層を有し、
前記第1の導電層および前記第2の導電層は、前記第1の半導体層に接し、
前記第1のトランジスタが有する前記第1の半導体層および第1の導電層には開口部が設けられ、
前記第1の電極は、前記第1の半導体層および前記第1の導電層に設けられた開口部と接する半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014260058A JP6545954B2 (ja) | 2013-12-27 | 2014-12-24 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013272190 | 2013-12-27 | ||
JP2013272190 | 2013-12-27 | ||
JP2014260058A JP6545954B2 (ja) | 2013-12-27 | 2014-12-24 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019114601A Division JP6710306B2 (ja) | 2013-12-27 | 2019-06-20 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015144267A true JP2015144267A (ja) | 2015-08-06 |
JP6545954B2 JP6545954B2 (ja) | 2019-07-17 |
Family
ID=53477633
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014260058A Active JP6545954B2 (ja) | 2013-12-27 | 2014-12-24 | 半導体装置 |
JP2019114601A Active JP6710306B2 (ja) | 2013-12-27 | 2019-06-20 | 半導体装置 |
JP2020091197A Active JP7038164B2 (ja) | 2013-12-27 | 2020-05-26 | 半導体装置 |
JP2022034424A Active JP7341271B2 (ja) | 2013-12-27 | 2022-03-07 | 半導体装置 |
JP2023138972A Pending JP2023164483A (ja) | 2013-12-27 | 2023-08-29 | 半導体装置 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019114601A Active JP6710306B2 (ja) | 2013-12-27 | 2019-06-20 | 半導体装置 |
JP2020091197A Active JP7038164B2 (ja) | 2013-12-27 | 2020-05-26 | 半導体装置 |
JP2022034424A Active JP7341271B2 (ja) | 2013-12-27 | 2022-03-07 | 半導体装置 |
JP2023138972A Pending JP2023164483A (ja) | 2013-12-27 | 2023-08-29 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9356054B2 (ja) |
JP (5) | JP6545954B2 (ja) |
KR (3) | KR102320576B1 (ja) |
TW (5) | TW202341289A (ja) |
WO (1) | WO2015097593A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017120904A (ja) * | 2015-12-28 | 2017-07-06 | 株式会社半導体エネルギー研究所 | 電極、半導体装置、半導体ウエハー、モジュールおよび電子機器とその作製方法 |
JP2017168838A (ja) * | 2016-03-10 | 2017-09-21 | 株式会社半導体エネルギー研究所 | トランジスタ、電子機器 |
JP2017175101A (ja) * | 2015-08-28 | 2017-09-28 | 株式会社半導体エネルギー研究所 | 酸化物半導体、トランジスタ及び半導体装置 |
JP2017183718A (ja) * | 2016-03-25 | 2017-10-05 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、および電子機器 |
KR20190042124A (ko) * | 2017-10-13 | 2019-04-24 | 삼성디스플레이 주식회사 | 표시장치 |
WO2020003055A1 (ja) * | 2018-06-29 | 2020-01-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2020084415A1 (ja) * | 2018-10-26 | 2020-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
US10784284B2 (en) | 2015-11-13 | 2020-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2020174213A (ja) * | 2016-06-27 | 2020-10-22 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP2021036338A (ja) * | 2020-11-11 | 2021-03-04 | セイコーエプソン株式会社 | 発光装置、および電子機器 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102244460B1 (ko) * | 2013-10-22 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102320576B1 (ko) * | 2013-12-27 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9312761B2 (en) * | 2014-02-12 | 2016-04-12 | International Business Machines Corporation | Three-D power converter in three distinct strata |
KR102259172B1 (ko) | 2014-05-30 | 2021-06-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
US9831238B2 (en) | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
US9455337B2 (en) | 2014-06-18 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP6417125B2 (ja) * | 2014-06-25 | 2018-10-31 | 株式会社ジャパンディスプレイ | 半導体装置 |
US9647129B2 (en) | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10204898B2 (en) | 2014-08-08 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP2016134388A (ja) | 2015-01-15 | 2016-07-25 | 株式会社ジャパンディスプレイ | 表示装置 |
TWI683365B (zh) | 2015-02-06 | 2020-01-21 | 日商半導體能源研究所股份有限公司 | 裝置及其製造方法以及電子裝置 |
JP6705663B2 (ja) * | 2015-03-06 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
KR102582523B1 (ko) | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
CN104779257B (zh) * | 2015-04-14 | 2017-11-03 | 深圳市华星光电技术有限公司 | Tft布局结构 |
US10978489B2 (en) | 2015-07-24 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device |
US10424671B2 (en) * | 2015-07-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
US10121553B2 (en) | 2015-09-30 | 2018-11-06 | Sunrise Memory Corporation | Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays |
WO2017103737A1 (en) | 2015-12-18 | 2017-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, data processing device, and method for manufacturing display panel |
JP6851814B2 (ja) | 2015-12-29 | 2021-03-31 | 株式会社半導体エネルギー研究所 | トランジスタ |
CN115954389A (zh) | 2016-03-04 | 2023-04-11 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
KR102515963B1 (ko) * | 2016-03-04 | 2023-03-30 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2018020350A1 (en) * | 2016-07-26 | 2018-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11699704B2 (en) * | 2017-09-28 | 2023-07-11 | Intel Corporation | Monolithic integration of a thin film transistor over a complimentary transistor |
JP7293190B2 (ja) | 2018-03-16 | 2023-06-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11751391B2 (en) | 2018-07-12 | 2023-09-05 | Sunrise Memory Corporation | Methods for fabricating a 3-dimensional memory structure of nor memory strings |
JP6808689B2 (ja) * | 2018-07-23 | 2021-01-06 | 株式会社Joled | 薄膜トランジスタ基板および発光装置 |
KR20200014473A (ko) * | 2018-07-31 | 2020-02-11 | 삼성디스플레이 주식회사 | 표시 장치 |
US11069796B2 (en) | 2018-08-09 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
KR20200034083A (ko) * | 2018-09-20 | 2020-03-31 | 삼성디스플레이 주식회사 | 트랜지스터 기판, 이의 제조 방법, 및 이를 포함하는 표시 장치 |
CN111564424A (zh) | 2019-01-30 | 2020-08-21 | 长江存储科技有限责任公司 | 使用混合键合的结构和器件及其形成方法 |
CN109923668A (zh) | 2019-01-30 | 2019-06-21 | 长江存储科技有限责任公司 | 使用虚设键合触点的混合键合 |
WO2021127218A1 (en) * | 2019-12-19 | 2021-06-24 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor |
TWI752802B (zh) * | 2020-08-17 | 2022-01-11 | 友達光電股份有限公司 | 指紋感測模組及指紋辨識裝置 |
US11937424B2 (en) | 2020-08-31 | 2024-03-19 | Sunrise Memory Corporation | Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same |
KR20220125909A (ko) * | 2021-03-05 | 2022-09-15 | 삼성디스플레이 주식회사 | 표시 장치 |
CN113470988B (zh) * | 2021-07-08 | 2022-03-04 | 齐鲁工业大学 | 一种缺陷调控的镓氧氮化物@碳布工作电极及其用途 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275613A (ja) * | 1992-03-25 | 1993-10-22 | Mitsubishi Electric Corp | 積層型半導体装置 |
JP2001160612A (ja) * | 1999-12-01 | 2001-06-12 | Takehide Shirato | 半導体装置及びその製造方法 |
JP2004200640A (ja) * | 2002-10-21 | 2004-07-15 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP2005109063A (ja) * | 2003-09-30 | 2005-04-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2012009839A (ja) * | 2010-05-21 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | 記憶装置、半導体装置 |
JP2013012730A (ja) * | 2011-06-01 | 2013-01-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013102133A (ja) * | 2011-09-21 | 2013-05-23 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置 |
JP2013138191A (ja) * | 2011-12-01 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Family Cites Families (143)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPS62274773A (ja) * | 1986-05-23 | 1987-11-28 | Hitachi Ltd | 半導体記憶装置 |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
KR950008385B1 (ko) | 1990-05-24 | 1995-07-28 | 삼성전자주식회사 | 반도체 소자의 워드라인 형성방법 |
JP2678094B2 (ja) * | 1991-03-01 | 1997-11-17 | シャープ株式会社 | ダイナミックランダムアクセスメモリ |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
KR100219519B1 (ko) * | 1997-01-10 | 1999-09-01 | 윤종용 | 페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
EP2246894B2 (en) | 2004-03-12 | 2018-10-10 | Japan Science and Technology Agency | Method for fabricating a thin film transistor having an amorphous oxide as a channel layer |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
RU2402106C2 (ru) | 2004-11-10 | 2010-10-20 | Кэнон Кабусики Кайся | Аморфный оксид и полевой транзистор с его использованием |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
KR20070085879A (ko) | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR20090115222A (ko) | 2005-11-15 | 2009-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
US7209384B1 (en) * | 2005-12-08 | 2007-04-24 | Juhan Kim | Planar capacitor memory cell and its applications |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5430846B2 (ja) * | 2007-12-03 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
FR2932005B1 (fr) | 2008-06-02 | 2011-04-01 | Commissariat Energie Atomique | Circuit a transistor integres dans trois dimensions et ayant une tension de seuil vt ajustable dynamiquement |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5487625B2 (ja) * | 2009-01-22 | 2014-05-07 | ソニー株式会社 | 半導体装置 |
KR101791279B1 (ko) * | 2010-01-15 | 2017-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101647384B1 (ko) | 2010-03-16 | 2016-08-24 | 삼성전자주식회사 | 반도체 소자 |
JP2011222767A (ja) | 2010-04-09 | 2011-11-04 | Sony Corp | 薄膜トランジスタならびに表示装置および電子機器 |
US8422272B2 (en) | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
JP5671418B2 (ja) * | 2010-08-06 | 2015-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
JP2012256821A (ja) * | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
TWI574259B (zh) * | 2010-09-29 | 2017-03-11 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置和其驅動方法 |
TWI525614B (zh) | 2011-01-05 | 2016-03-11 | 半導體能源研究所股份有限公司 | 儲存元件、儲存裝置、及信號處理電路 |
TWI525619B (zh) * | 2011-01-27 | 2016-03-11 | 半導體能源研究所股份有限公司 | 記憶體電路 |
JP5839474B2 (ja) * | 2011-03-24 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
US9012993B2 (en) * | 2011-07-22 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9252279B2 (en) | 2011-08-31 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2013039126A1 (en) * | 2011-09-16 | 2013-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952379B2 (en) * | 2011-09-16 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5901927B2 (ja) * | 2011-10-06 | 2016-04-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6012450B2 (ja) | 2011-12-23 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
JP6091905B2 (ja) | 2012-01-26 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5981157B2 (ja) * | 2012-02-09 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8981370B2 (en) | 2012-03-08 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9349849B2 (en) | 2012-03-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
JP5980538B2 (ja) * | 2012-03-29 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20230004930A (ko) | 2012-04-13 | 2023-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102119914B1 (ko) | 2012-05-31 | 2020-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP6335616B2 (ja) | 2013-04-30 | 2018-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI631711B (zh) | 2013-05-01 | 2018-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
KR102222344B1 (ko) | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN105190902B (zh) | 2013-05-09 | 2019-01-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
KR102244460B1 (ko) | 2013-10-22 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20220163502A (ko) * | 2013-12-26 | 2022-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102320576B1 (ko) * | 2013-12-27 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102325158B1 (ko) * | 2014-01-30 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 |
-
2014
- 2014-12-16 KR KR1020167019417A patent/KR102320576B1/ko active IP Right Grant
- 2014-12-16 KR KR1020237014824A patent/KR20230065379A/ko not_active Application Discontinuation
- 2014-12-16 KR KR1020217034978A patent/KR102529174B1/ko active IP Right Grant
- 2014-12-16 WO PCT/IB2014/066941 patent/WO2015097593A1/en active Application Filing
- 2014-12-18 TW TW112106832A patent/TW202341289A/zh unknown
- 2014-12-18 TW TW107134977A patent/TWI675439B/zh not_active IP Right Cessation
- 2014-12-18 TW TW103144336A patent/TWI645515B/zh not_active IP Right Cessation
- 2014-12-18 TW TW110110255A patent/TWI795746B/zh active
- 2014-12-18 TW TW108127024A patent/TWI724479B/zh not_active IP Right Cessation
- 2014-12-22 US US14/578,919 patent/US9356054B2/en active Active
- 2014-12-24 JP JP2014260058A patent/JP6545954B2/ja active Active
-
2016
- 2016-05-25 US US15/163,799 patent/US9704868B2/en active Active
-
2019
- 2019-06-20 JP JP2019114601A patent/JP6710306B2/ja active Active
-
2020
- 2020-05-26 JP JP2020091197A patent/JP7038164B2/ja active Active
-
2022
- 2022-03-07 JP JP2022034424A patent/JP7341271B2/ja active Active
-
2023
- 2023-08-29 JP JP2023138972A patent/JP2023164483A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275613A (ja) * | 1992-03-25 | 1993-10-22 | Mitsubishi Electric Corp | 積層型半導体装置 |
JP2001160612A (ja) * | 1999-12-01 | 2001-06-12 | Takehide Shirato | 半導体装置及びその製造方法 |
JP2004200640A (ja) * | 2002-10-21 | 2004-07-15 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP2005109063A (ja) * | 2003-09-30 | 2005-04-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2012009839A (ja) * | 2010-05-21 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | 記憶装置、半導体装置 |
JP2013012730A (ja) * | 2011-06-01 | 2013-01-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013102133A (ja) * | 2011-09-21 | 2013-05-23 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置 |
JP2013138191A (ja) * | 2011-12-01 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017175101A (ja) * | 2015-08-28 | 2017-09-28 | 株式会社半導体エネルギー研究所 | 酸化物半導体、トランジスタ及び半導体装置 |
US9825179B2 (en) | 2015-08-28 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
US10784284B2 (en) | 2015-11-13 | 2020-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11271013B2 (en) | 2015-11-13 | 2022-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a plug |
JP2017120904A (ja) * | 2015-12-28 | 2017-07-06 | 株式会社半導体エネルギー研究所 | 電極、半導体装置、半導体ウエハー、モジュールおよび電子機器とその作製方法 |
JP2017168838A (ja) * | 2016-03-10 | 2017-09-21 | 株式会社半導体エネルギー研究所 | トランジスタ、電子機器 |
JP2017183718A (ja) * | 2016-03-25 | 2017-10-05 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、および電子機器 |
JP7025488B2 (ja) | 2016-06-27 | 2022-02-24 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP2020174213A (ja) * | 2016-06-27 | 2020-10-22 | 株式会社半導体エネルギー研究所 | トランジスタ |
KR20190042124A (ko) * | 2017-10-13 | 2019-04-24 | 삼성디스플레이 주식회사 | 표시장치 |
KR102434199B1 (ko) * | 2017-10-13 | 2022-08-19 | 삼성디스플레이 주식회사 | 표시장치 |
JPWO2020003055A1 (ja) * | 2018-06-29 | 2021-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2020003055A1 (ja) * | 2018-06-29 | 2020-01-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US11581427B2 (en) | 2018-06-29 | 2023-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP7344869B2 (ja) | 2018-06-29 | 2023-09-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2020084415A1 (ja) * | 2018-10-26 | 2020-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
JP2021036338A (ja) * | 2020-11-11 | 2021-03-04 | セイコーエプソン株式会社 | 発光装置、および電子機器 |
JP7156350B2 (ja) | 2020-11-11 | 2022-10-19 | セイコーエプソン株式会社 | 電気光学装置、および電子機器 |
Also Published As
Publication number | Publication date |
---|---|
TWI724479B (zh) | 2021-04-11 |
US20160268261A1 (en) | 2016-09-15 |
JP7038164B2 (ja) | 2022-03-17 |
KR20230065379A (ko) | 2023-05-11 |
KR20210132241A (ko) | 2021-11-03 |
US20150187823A1 (en) | 2015-07-02 |
JP2023164483A (ja) | 2023-11-10 |
TWI795746B (zh) | 2023-03-11 |
JP6710306B2 (ja) | 2020-06-17 |
JP2019208030A (ja) | 2019-12-05 |
KR20160102236A (ko) | 2016-08-29 |
WO2015097593A1 (en) | 2015-07-02 |
JP7341271B2 (ja) | 2023-09-08 |
TWI675439B (zh) | 2019-10-21 |
TW201941371A (zh) | 2019-10-16 |
JP6545954B2 (ja) | 2019-07-17 |
KR102320576B1 (ko) | 2021-11-02 |
TW202127590A (zh) | 2021-07-16 |
TW202341289A (zh) | 2023-10-16 |
JP2020145470A (ja) | 2020-09-10 |
US9704868B2 (en) | 2017-07-11 |
TWI645515B (zh) | 2018-12-21 |
KR102529174B1 (ko) | 2023-05-08 |
TW201906088A (zh) | 2019-02-01 |
JP2022084712A (ja) | 2022-06-07 |
US9356054B2 (en) | 2016-05-31 |
TW201530698A (zh) | 2015-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7341271B2 (ja) | 半導体装置 | |
JP6967643B2 (ja) | 半導体装置 | |
JP6728452B2 (ja) | 半導体装置 | |
JP6422730B2 (ja) | 半導体装置 | |
JP6487268B2 (ja) | 半導体装置とその作製方法、電子機器 | |
JP2015164181A (ja) | 半導体装置、電子機器及び半導体装置の作製方法 | |
JP2015109425A (ja) | 半導体装置および半導体装置の作製方法 | |
JP6126509B2 (ja) | 半導体装置 | |
JP6386126B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171213 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180921 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181002 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190111 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190528 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190620 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6545954 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |