JP6417125B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6417125B2 JP6417125B2 JP2014130259A JP2014130259A JP6417125B2 JP 6417125 B2 JP6417125 B2 JP 6417125B2 JP 2014130259 A JP2014130259 A JP 2014130259A JP 2014130259 A JP2014130259 A JP 2014130259A JP 6417125 B2 JP6417125 B2 JP 6417125B2
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- 239000004065 semiconductor Substances 0.000 title claims description 117
- 239000010410 layer Substances 0.000 claims description 241
- 239000000758 substrate Substances 0.000 claims description 59
- 239000011229 interlayer Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 23
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 124
- 239000011347 resin Substances 0.000 description 42
- 229920005989 resin Polymers 0.000 description 42
- 239000010409 thin film Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000137 annealing Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 moisture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
一方で、半導体層としてTAOSを用いる場合、良好な電気的特性や膜状態を得るためには、膜厚を薄く形成することが好ましいが、半導体層を薄く形成すると、前述した一括開口の際、半導体層へのコンタクトホール開口におけるエッチング終了点の条件設定が難しくなる。膜厚の薄い半導体層は、当該エッチング時に削られやすいため、開口不良を起こさないように絶縁層を十分に除去できるような、マージンを持ったエッチング条件での処理が難しいためである。
これに対して、TAOSの膜厚を厚く形成すると、マージンを持ったエッチング条件での処理は可能な反面、TAOS膜が結晶化しやすい、薄膜トランジスタとして用いる場合にしきい値を好適に制御できない、等の不具合が生ずる。
絶縁性基板と、前記絶縁性基板上に形成され、チャネル領域、前記チャネル領域を挟んだ両側に設けられたソース領域及びドレイン領域を有する半導体層と、
前記チャネル領域上に形成されるゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート電極、前記半導体層及び前記ゲート絶縁膜を覆う層間絶縁膜と、
前記層間絶縁膜に設けられ且つ前記ソース領域に到達するコンタクトホールに形成されるソース電極と、
前記層間絶縁膜に設けられ且つ前記ドレイン領域に到達するコンタクトホールに形成されるドレイン電極と、
前記ゲート電極と同じ材料で形成された配線と、を具備し、
前記絶縁性基板は、支持基板と、前記支持基板と前記半導体層との間に設けられた絶縁性材料からなるアンダーコート層をさらに含み、前記支持基板と前記半導体層との間には前記半導体層と対向して遮光層をさらに含み、
前記層間絶縁膜に設けられたコンタクトホールは前記遮光層と、前記ゲート電極と同じ材料で形成された配線の上部表面に到達し、前記遮光層は前記半導体層と対向する部分で第1遮光層と第2遮光層に分離され、前記ソース電極を前記遮光層の一方である前記第1遮光層と電気的に接続し、前記ドレイン電極により、前記遮光層の他方である前記第2遮光層と、前記ゲート電極と同じ材料で形成された配線とを電気的に接続していることを特徴とする半導体装置が提供される。
図1は、実施形態に係る半導体装置の構成の一例を表す図を示す。
図示するように、この半導体装置20は薄膜トランジスタSWAと配線7’を備えている。
薄膜トランジスタSWAの絶縁性基板3上には、チャネル領域、チャネル領域を挟んだ両側に設けられたソース領域SCS及びドレイン領域SCDを有する酸化物半導体層5が形成されている。酸化物半導体層5は、例えば、インジウム(In)、ガリウム(Ga)、亜鉛(Zn)、スズ(Sn)の少なくとも1つを含む酸化物によって形成されている。酸化物半導体層を形成する代表的な材料の例としては、例えば、酸化インジウムガリウム亜鉛(IGZO)、酸化インジウムガリウム(IGO)、酸化インジウム亜鉛(IZO)、酸化亜鉛スズ(ZnSnO)、酸化亜鉛(ZnO)などが挙げられる。特に、透明アモルファス酸化物半導体としてはIGZOを使用することができる。
また、絶縁性基板3上には、ゲート絶縁膜6と同じ材料で形成された絶縁層6’と、絶縁層6’上にゲート電極7と同じ材料で形成された配線7’とを設けることができる。配線7’上には層間絶縁膜8を貫通して配線7’に到達する第3のコンタクトホールが設けられている。配線7’は、この第3のコンタクトホールを介してドレイン電極10と導通されている。
支持基板1として透明なガラス基板を用意する。
まず、図2(a)に示すように、支持基板1上に遮光層4を形成する。遮光層4は、Moを使用して、スパッタリング法などにより形成した。
続いて、遮光層4に対向して酸化物半導体層5を形成する。アンダーコート層2の上に、アルゴン(Ar)と酸素(O2)との混合ガスを用いたスパッタ法により酸化インジウムガリウム亜鉛(IGZO)からなる透明アモルファス半導体層を成膜した後に、この半導体層をパターニングすることによって形成した。酸化物半導体層5の厚さは50nm、例えば30ないし40nmにすることができる。
このようなアニールにより、酸化物半導体層5においては、ゲート絶縁膜6から露出したそれぞれの部分が酸化して高抵抗化されるとともに、ゲート絶縁膜6の直下まで酸化が進行する(つまり、ゲート絶縁膜6の直下の領域まで酸素が拡散する)。このため、結果的には、酸化物半導体層5全体が高抵抗化される。
その後、層間絶縁膜8及び酸化物半導体層5のソース領域SCSを貫通してアンダーコート層2が露出するまでパターニングする。これにより、ソース領域SCS上の層間絶縁膜に第3の開孔16、ソース領域の酸化物半導体層に第1の開孔14が設けられて、絶縁性基板3のアンダーコート層2に到達する第1コンタクトホール11を形成する。また同時に、層間絶縁膜8及び酸化物半導体層5のドレイン領域SCDを貫通してアンダーコート層2が露出するまでパターニングする。これにより、ドレイン領域SCD上の層間絶縁膜に第4の開孔17、ソース領域の酸化物半導体層に第2の開孔15が設けられて、絶縁性基板3のアンダーコート層2に到達する第2コンタクトホール12を形成する。さらに同時に、層間絶縁膜8を貫通して配線層7’が露出するまでパターニングすることにより、第3コンタクトホール13を形成することができる。
図3は、実施形態に係る半導体装置に使用可能な薄膜トランジスタの構成の他の一例を表す図を示す。
図示するように、図3に示す薄膜トランジスタSWBは、支持基板1上に形成される遮光層4をソース電極9側にさらに延長して形成すること、第1コンタクトホール11をさらに遮光層4まで延長して形成すること、遮光層4と同時に遮光層4とは分離した遮光層4’を形成すること、第2コンタクトホール12を遮光層4’まで延長して形成すること、第1コンタクトホール11内にソース領域SCSにコンタクトして遮光層4に接続するソース電極9を形成すること、第2コンタクトホール12内にドレイン領域SCDにコンタクトして遮光層4’に接続するドレイン電極10を形成すること以外は、図1の薄膜トランジスタSWAと同様の構成を有する。
図4に、薄膜トランジスタSWAを適用した表示装置の構造例を概略的に示す断面図を示す。
図4に示すように、有機EL表示装置は、アクティブマトリクス駆動方式を採用したものであり、アレイ基板ARと、対向基板CTとを備えている。アレイ基板ARは、第1樹脂層10を用いて形成されている。アレイ基板ARは、第1樹脂層110の内面110A側に、第1絶縁膜111、第2絶縁膜112、第2絶縁膜8、第3絶縁膜114、リブ15、スイッチング素子SW1乃至SW3、表示素子としての有機EL素子OLED1乃至OLED3などを備えている。
半導体層SCは、第1絶縁膜111の上に形成されている。半導体層SCの上には、ゲート絶縁膜6が形成され、その上にスイッチング素子SW1のゲート電極7が形成されている。ゲート電極7は、第2絶縁膜8によって覆われている。第2絶縁膜8は、第1絶縁膜111の上にも配置されている。
以下に、本願出願の当初の特許請求の範囲に記載された発明を付記する。
[1] 絶縁性基板と、
前記絶縁性基板上に形成され、チャネル領域、前記チャネル領域を挟んだ両側に設けられたソース領域及びドレイン領域、前記ソース領域に設けられた第1の開孔、及び前記ドレイン領域に設けられた第2の開孔を有する酸化物半導体層と、
前記チャネル領域上に形成されると共に、前記ソース領域及びドレイン領域を露出するゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート電極、前記酸化物半導体層の前記ソース領域及びドレイン領域、及び前記ゲート絶縁膜を覆うと共に、前記第1の開孔と連通する第3の開孔、及び前記第2の開孔と連通する第4の開孔が形成された層間絶縁膜と、
前記第1の開孔と前記第3の開孔とを含み前記絶縁性基板に到達する第1のコンタクトホールと、
前記第2の開孔と前記第4の開孔とを含み前記絶縁性基板に到達する第2のコンタクトホールと、
前記第1のコンタクトホール内に形成されると共に前記第1の開孔の内壁とコンタクトする前記ソース電極と、
前記第2のコンタクトホール内に形成されると共に前記第2の開孔の内壁とコンタクトする前記ドレイン電極とを具備することを特徴とする半導体装置。
[2] 前記酸化物半導体層は、30ないし40nmの厚さを有することを特徴とする[1]に記載の半導体装置。
[3] 前記絶縁性基板は、支持基板と、前記支持基板と前記酸化物半導体層との間に設けられた絶縁性材料からなるアンダーコート層をさらに含み、前記絶縁性基板とアンダーコート層との間には酸化物半導体層と対向して遮光層をさらに含むことを特徴とする[1]または[2]に記載の半導体装置。
[4] 前記第1のコンタクトホールと前記第2のコンタクトホールは、各々、前記遮光層に到達し、前記ソース電極及び前記ドレイン電極は、各々、前記遮光層とコンタクトしている[3]に記載の半導体装置。
[5] 絶縁性基板上に酸化物半導体層を形成し、
前記酸化物半導体層のチャネル領域上にゲート絶縁膜及びゲート電極を形成すると共に前記チャネル領域を挟んだ両側にソース領域及びドレイン領域を形成し、
前記ゲート電極上に層間絶縁膜を形成し、
前記層間絶縁膜、及び前記酸化物半導体層を前記絶縁性基板が露出するまでパターニングし、前記ソース領域の前記層間絶縁膜に第3の開孔、及び前記ソース領域の前記酸化物半導体層に第1の開孔を形成して第1のコンタクトホールを設け、前記ドレイン領域の前記層間絶縁膜に第4の開孔、及び前記酸化物半導体層に第2の開孔を形成して第2のコンタクトホールを設け、
前記第1のコンタクトホール内に前記第1の開孔の内壁とコンタクトするソース電極を形成し、及び
前記第2のコンタクトホール内に前記第2の開孔の内壁とコンタクトするドレイン電極を形成することを特徴とする半導体装置の製造方法。
[6] 前記酸化物半導体層は、30ないし40nmの厚さを有することを特徴とする[5]に記載の半導体装置の製造方法。
[7] 前記絶縁性基板上に前記酸化物半導体層を形成する工程の前に、
支持基板上に前記酸化物半導体層と対向する遮光層を形成し、及び
前記支持基板上に前記遮光層を介してアンダーコート層を設けることにより、前記絶縁性基板を形成することをさらに含むことを特徴とする[5]または[6]に記載の半導体装
置の製造方法。
[8] 前記層間絶縁膜、前記酸化物半導体層、及び前記絶縁性基板を、前記遮光層が露出するまでパターニングして前記第1及び第2のコンタクトホールを設け、前記ソース電極及び前記ドレイン電極を前記遮光層にコンタクトさせることを特徴とする[7]に記載の半導体装置の製造方法。
Claims (2)
- 絶縁性基板と、前記絶縁性基板上に形成され、チャネル領域、前記チャネル領域を挟んだ両側に設けられたソース領域及びドレイン領域を有する半導体層と、
前記チャネル領域上に形成されるゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート電極、前記半導体層及び前記ゲート絶縁膜を覆う層間絶縁膜と、
前記層間絶縁膜に設けられ且つ前記ソース領域に到達するコンタクトホールに形成されるソース電極と、
前記層間絶縁膜に設けられ且つ前記ドレイン領域に到達するコンタクトホールに形成されるドレイン電極と、前記ゲート電極と同じ材料で形成された配線と、を具備し、
前記絶縁性基板は、支持基板と、前記支持基板と前記半導体層との間に設けられた絶縁性材料からなるアンダーコート層をさらに含み、前記支持基板と前記半導体層との間には前記半導体層と対向して遮光層をさらに含み、
前記層間絶縁膜に設けられたコンタクトホールは前記遮光層と、前記ゲート電極と同じ材料で形成された配線の上部表面に到達し、前記遮光層は前記半導体層と対向する部分で第1遮光層と第2遮光層に分離され、前記ソース電極を前記遮光層の一方である前記第1遮光層と電気的に接続し、前記ドレイン電極により、前記遮光層の他方である前記第2遮光層と、前記ゲート電極と同じ材料で形成された配線とを電気的に接続していることを特徴とする半導体装置。 - 前記半導体層は、30ないし40nmの厚さを有することを特徴とする請求項1に記載の半導体装置。
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KR102320576B1 (ko) * | 2013-12-27 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6545976B2 (ja) * | 2014-03-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102582740B1 (ko) * | 2014-05-30 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
JP2016040764A (ja) * | 2014-08-11 | 2016-03-24 | キヤノン株式会社 | 発光装置及び画像形成装置 |
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US20150380560A1 (en) | 2015-12-31 |
US20180013006A1 (en) | 2018-01-11 |
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US10374096B2 (en) | 2019-08-06 |
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