JP6069087B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6069087B2 JP6069087B2 JP2013094858A JP2013094858A JP6069087B2 JP 6069087 B2 JP6069087 B2 JP 6069087B2 JP 2013094858 A JP2013094858 A JP 2013094858A JP 2013094858 A JP2013094858 A JP 2013094858A JP 6069087 B2 JP6069087 B2 JP 6069087B2
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- layer
- transistor
- insulating layer
- oxide
- oxide semiconductor
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1乃至図4を参照して説明する。本実施の形態では、半導体装置の一例として、酸化物半導体層を有するトランジスタを示す。
本実施の形態では、実施の形態1で示すトランジスタを適用した半導体装置の一例として、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置を、図面を用いて説明する。
本実施の形態においては、実施の形態1に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態2に示した構成と異なる構成について、図7を用いて説明を行う。
本実施の形態では、本明細書に示すトランジスタを使用した半導体装置の他の例として、論理回路であるNOR型回路、及びNAND型回路を図8(A)乃至(C)に示す。図8(B)はNOR型回路であり、図8(C)はNAND型回路である。図8(A)は図8(B)のNOR型回路におけるトランジスタ802及びトランジスタ803の構造を示す断面図である。
本実施の形態では、半導体装置の一例として、上記実施の形態1に開示したトランジスタを少なくとも一部に用いたCPU(Central Processing Unit)について説明する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビ、モニタ等の表示装置、照明装置、デスクトップ型或いはノート型のパーソナルコンピュータ、ワードプロセッサ、DVD(Digital Versatile Disc)などの記録媒体に記憶された静止画又は動画を再生する画像再生装置、ポータブルCDプレーヤ、ラジオ、テープレコーダ、ヘッドホンステレオ、ステレオ、コードレス電話子機、トランシーバ、携帯無線機、携帯電話、自動車電話、携帯型ゲーム機、電卓、携帯情報端末、電子手帳、電子書籍、電子翻訳機、音声入力機器、ビデオカメラ、デジタルスチルカメラ、電気シェーバ、電子レンジ等の高周波加熱装置、電気炊飯器、電気洗濯機、電気掃除機、エアコンディショナーなどの空調設備、食器洗い器、食器乾燥器、衣類乾燥器、布団乾燥器、電気冷蔵庫、電気冷凍庫、電気冷凍冷蔵庫、DNA保存用冷凍庫、煙感知器、放射線測定器、透析装置等の医療機器、などが挙げられる。さらに、誘導灯、信号機、ベルトコンベア、エレベータ、エスカレータ、産業用ロボット、電力貯蔵システム等の産業機器も挙げられる。また、石油を用いたエンジンや、非水系二次電池からの電力を用いて電動機により推進する移動体なども、電気機器の範疇に含まれるものとする。上記移動体として、例えば、電気自動車(EV)、内燃機関と電動機を併せ持ったハイブリッド車(HEV)、プラグインハイブリッド車(PHEV)、これらのタイヤ車輪を無限軌道に変えた装軌車両、電動アシスト自転車を含む原動機付自転車、自動二輪車、電動車椅子、ゴルフ用カート、小型又は大型船舶、潜水艦、ヘリコプター、航空機、ロケット、人工衛星、宇宙探査機や惑星探査機、宇宙船が挙げられる。これらの電子機器の具体例を図10に示す。
102 導電層
103 絶縁層
104 絶縁層
105 絶縁層
106 酸化物絶縁層
107 酸化物絶縁層
108 酸化物半導体層
108a 酸化物半導体層
108b 酸化物半導体層
110 導電膜
110a ソース電極層
110b ドレイン電極層
111a 領域
111b 領域
111c 領域
111d 領域
112 絶縁層
113 ゲート絶縁膜
114 ゲート絶縁層
116 ゲート電極層
117 ゲート絶縁層
118 絶縁層
120 トランジスタ
122 トランジスタ
124 トランジスタ
126 トランジスタ
128 トランジスタ
130 トランジスタ
150 開口部
160 トランジスタ
162 トランジスタ
164 容量素子
170a レジストマスク
170b レジストマスク
180 レジストマスク
200 基板
202a 電極層
202b 導電層
203 絶縁層
204 絶縁層
205 絶縁層
206 素子分離絶縁層
208 ゲート絶縁層
210 ゲート電極層
212a 電極層
212b 電極層
214 不純物領域
216 チャネル形成領域
218 サイドウォール絶縁層
220 高濃度不純物領域
222a 電極層
222b 配線層
224 金属間化合物領域
228 絶縁層
230 絶縁層
232 絶縁層
234 絶縁層
235 絶縁層
244 酸化物半導体層
250 メモリセル
251 メモリセルアレイ
251a メモリセルアレイ
251b メモリセルアレイ
253 導電層
254 容量素子
256 配線層
258 周辺回路
260 ゲート絶縁層
262 ゲート電極層
263 絶縁層
268a 電極層
268b 電極層
800 基板
801 トランジスタ
802 トランジスタ
803 トランジスタ
804 トランジスタ
806 素子分離絶縁層
811 トランジスタ
812 トランジスタ
813 トランジスタ
814 トランジスタ
821 ゲート電極層
825 電極層
826 絶縁層
830 絶縁層
831 電極層
832 配線層
833 絶縁層
834 配線層
835 電極層
836 絶縁層
837 絶縁層
838 酸化物絶縁層
839 絶縁層
840 導電層
841a ゲート電極層
841b 電極層
843 ゲート絶縁層
845 電極層
1141 スイッチング素子
1142 メモリセル
1143 メモリセル群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
3021 本体
3022 固定部
3023 表示部
3024 操作ボタン
3025 外部メモリスロット
8000 テレビジョン装置
8001 筐体
8002 表示部
8003 スピーカ部
8200 室内機
8201 筐体
8202 送風口
8203 CPU
8204 室外機
8300 電気冷凍冷蔵庫
8301 筐体
8302 冷蔵室用扉
8303 冷凍室用扉
8304 CPU
9000 テーブル
9001 筐体
9002 脚部
9003 表示部
9004 表示ボタン
9005 電源コード
9033 留め具
9034 スイッチ
9035 電源スイッチ
9036 スイッチ
9038 操作スイッチ
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a 領域
9632b 領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 コンバータ
9638 操作キー
9639 ボタン
9700 電気自動車
9701 二次電池
9702 制御回路
9703 駆動装置
9704 処理装置
Claims (6)
- 酸化物半導体層と、
前記酸化物半導体層上の第1の導電層と、
前記酸化物半導体層上の第2の導電層と、
前記第1の導電層及び前記第2の導電層上の第1の絶縁層と、
前記第1の絶縁層上の第2の絶縁層と、
前記第2の絶縁層上のゲート電極層と、を有し、
前記第1の絶縁層は、開口部を有し、
前記第2の絶縁層は、前記開口部において前記酸化物半導体層と接する領域を有し、
前記第1の導電層は、下端部にチャネル長方向に突出した第1の領域を有し、
前記第2の導電層は、下端部にチャネル長方向に突出した第2の領域を有し、
前記酸化物半導体層は、前記第1の領域と重なる領域と、前記第2の領域と重なる領域とを有し、
チャネル長方向において、前記開口部の幅は、前記第1の導電層と前記第2の導電層との間の距離より大きく、且つ前記ゲート電極層の幅より小さく、
チャネル幅方向において、前記開口部の幅は、前記第1の導電層の幅よりも小さく、且つ前記第2の導電層の幅よりも小さいことを特徴とする半導体装置。 - 請求項1において、
前記酸化物半導体層において前記第2の絶縁層と接する領域の膜厚は、前記第1の領域と重なる領域の膜厚よりも小さいことを特徴とする半導体装置。 - 請求項1又は2において、
前記酸化物半導体層の下層に接して、酸化物絶縁層を有し、
前記酸化物絶縁層は、前記酸化物半導体層の構成元素から選択される一又は複数の金属元素を含むことを特徴とする半導体装置。 - 請求項3において、
前記酸化物絶縁層は、ガリウムを含むことを特徴とする半導体装置。 - 請求項3又は4において、
第3の導電層を有し、
前記第3の導電層は、前記酸化物絶縁層を介して前記酸化物半導体層と重畳する領域を有することを特徴とする半導体装置。 - 請求項1乃至5のいずれか一において、
前記第2の絶縁層は、前記酸化物半導体層の構成元素から選択される一又は複数の金属元素を含む酸化物絶縁層であることを特徴とする半導体装置。
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JP2020014009A (ja) * | 2012-04-30 | 2020-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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US11837666B2 (en) | 2012-04-30 | 2023-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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