JP5982097B2 - 積層半導体メモリ装置、これを含むメモリシステム及び貫通電極の欠陥リペア方法 - Google Patents

積層半導体メモリ装置、これを含むメモリシステム及び貫通電極の欠陥リペア方法 Download PDF

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JP5982097B2
JP5982097B2 JP2011121586A JP2011121586A JP5982097B2 JP 5982097 B2 JP5982097 B2 JP 5982097B2 JP 2011121586 A JP2011121586 A JP 2011121586A JP 2011121586 A JP2011121586 A JP 2011121586A JP 5982097 B2 JP5982097 B2 JP 5982097B2
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input
defect
electrode
memory device
semiconductor memory
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JP2011253607A (ja
JP2011253607A5 (enExample
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台榮 ▲呉▼
台榮 ▲呉▼
光一 朴
光一 朴
潤碩 梁
潤碩 梁
寧洙 孫
寧洙 孫
始弘 金
始弘 金
升浚 ▲ペ▼
升浚 ▲ぺ▼
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/702—Masking faults in memories by using spares or by reconfiguring by replacing auxiliary circuits, e.g. spare voltage generators, decoders or sense amplifiers, to be used instead of defective ones
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2011121586A 2010-06-01 2011-05-31 積層半導体メモリ装置、これを含むメモリシステム及び貫通電極の欠陥リペア方法 Active JP5982097B2 (ja)

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KR1020100051733A KR101728068B1 (ko) 2010-06-01 2010-06-01 적층 반도체 메모리 장치, 이를 포함하는 메모리 시스템, 및 관통전극 결함리페어 방법
KR10-2010-0051733 2010-06-01

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JP2011253607A JP2011253607A (ja) 2011-12-15
JP2011253607A5 JP2011253607A5 (enExample) 2014-06-05
JP5982097B2 true JP5982097B2 (ja) 2016-08-31

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US (1) US8654593B2 (enExample)
JP (1) JP5982097B2 (enExample)
KR (1) KR101728068B1 (enExample)
CN (1) CN102270504B (enExample)
TW (1) TWI532051B (enExample)

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Publication number Publication date
TW201201218A (en) 2012-01-01
JP2011253607A (ja) 2011-12-15
KR101728068B1 (ko) 2017-04-19
CN102270504B (zh) 2016-08-31
US8654593B2 (en) 2014-02-18
CN102270504A (zh) 2011-12-07
TWI532051B (zh) 2016-05-01
KR20110131976A (ko) 2011-12-07
US20110292742A1 (en) 2011-12-01

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