JP5792469B2 - 電子機器 - Google Patents
電子機器 Download PDFInfo
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- JP5792469B2 JP5792469B2 JP2011008185A JP2011008185A JP5792469B2 JP 5792469 B2 JP5792469 B2 JP 5792469B2 JP 2011008185 A JP2011008185 A JP 2011008185A JP 2011008185 A JP2011008185 A JP 2011008185A JP 5792469 B2 JP5792469 B2 JP 5792469B2
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- 239000010410 layer Substances 0.000 description 120
- 239000010408 film Substances 0.000 description 38
- 239000004973 liquid crystal related substance Substances 0.000 description 37
- 239000004065 semiconductor Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 14
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- 238000010438 heat treatment Methods 0.000 description 10
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- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
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- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 125000002066 L-histidyl group Chemical group [H]N1C([H])=NC(C([H])([H])[C@](C(=O)[*])([H])N([H])[H])=C1[H] 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 238000004148 unit process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Description
本実施の形態では、外光を利用して画像表示を行う表示部を有する電子機器の一例を図1(A)及び図1(B)に示す。
本実施の形態では、実施の形態1に示した図2及び図3に対応する画素構造に関して、図6、図7、及び図8を用いて以下に説明する。なお、図2及び図3と同じ箇所には、同じ符号を用いて図6、図7、及び図8を説明する。
本実施の形態では、カラーフィルタを設け、フルカラー表示が可能な液晶表示モジュールとする一例を示す。
本実施の形態においては、上記実施の形態で説明した液晶表示装置を具備する電子機器の例について説明する。
62 期間
63 期間
100:表示パネル
101:画素回路
103:画素
104:画素
105:表示素子
106:フォトセンサ
107:信号線側の表示素子駆動回路
108:走査線側の表示素子駆動回路
109:フォトセンサ読み出し回路
110:フォトセンサ駆動回路
115:カラーフィルタ
116a、116b:FPC
120:表示パネル
125:表示素子
135 光
139:外光
190 液晶表示モジュール
201 トランジスタ
202 保持容量
203 液晶素子
204 フォトダイオード
205 トランジスタ
206 トランジスタ
207 ゲート信号線
208 フォトダイオードリセット信号線
209 読み出し信号線
210 ビデオデータ信号線
211 フォトセンサ出力信号線
212 フォトセンサ基準信号線
213 ゲート信号線
214 容量配線
221 トランジスタ
222 保持容量
223 液晶素子
224 容量配線
227 ゲート信号線
230 基板
231 絶縁層
232 ゲート絶縁層
233 酸化物半導体層
234 電極層
235 電極層
236 電極層
237 絶縁層
238 p層
239 i層
240 n層
241 絶縁層
242 反射電極層
243 接続電極層
244 配向膜
245 凹部
251 電極層
253 酸化物半導体層
254 電極層
255 酸化物半導体層
256 酸化物半導体層
257 電極層
258 電極層
1030 電子機器
1031 ボタン
1032 表示部
1033 領域
1034 スイッチ
1035 電源スイッチ
1036 キーボード表示スイッチ
9630 筐体
9631 表示部
9632 操作キー
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 コンバータ
9637 コンバータ
Claims (3)
- タッチ入力機能を有する表示部を備えた電子機器であって、
前記表示部は、第1画面領域と、第2画面領域とを有し、
前記第1画面領域にボタンを表示し、前記ボタンへの入力結果に対応するデータに基づいて前記第2画面領域に画像を表示する機能を有し、
所定の期間、前記第1画面領域に表示された前記ボタンへのタッチ入力が行われない時間が経過すると、前記データに基づいて前記第1画面領域及び前記第2画面領域にわたって画像を表示する機能を有することを特徴とする電子機器。 - 請求項1において、
前記ボタンが前記第1画面領域に表示されている期間において、前記ボタンが前記第1画面領域に静止画として表示された後、前記第1画面領域に設けられた表示素子への電力供給が停止された期間を有することを特徴とする電子機器。 - 請求項1または請求項2において、
前記第2画面領域の表示画像の更新が行われない期間において、前記第2画面領域に設けられた表示素子を制御する機能を有する回路の動作が停止された期間を有することを特徴とする電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011008185A JP5792469B2 (ja) | 2010-01-20 | 2011-01-18 | 電子機器 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010010391 | 2010-01-20 | ||
JP2010010391 | 2010-01-20 | ||
JP2011008185A JP5792469B2 (ja) | 2010-01-20 | 2011-01-18 | 電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015155682A Division JP6109890B2 (ja) | 2010-01-20 | 2015-08-06 | 電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011170337A JP2011170337A (ja) | 2011-09-01 |
JP2011170337A5 JP2011170337A5 (ja) | 2014-02-13 |
JP5792469B2 true JP5792469B2 (ja) | 2015-10-14 |
Family
ID=44277269
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011008185A Active JP5792469B2 (ja) | 2010-01-20 | 2011-01-18 | 電子機器 |
JP2015155682A Active JP6109890B2 (ja) | 2010-01-20 | 2015-08-06 | 電子機器 |
JP2017043399A Active JP6538099B2 (ja) | 2010-01-20 | 2017-03-08 | 電子機器 |
JP2019105366A Active JP6785918B2 (ja) | 2010-01-20 | 2019-06-05 | 電子機器 |
JP2020179798A Withdrawn JP2021039355A (ja) | 2010-01-20 | 2020-10-27 | 電子機器 |
JP2022075546A Withdrawn JP2022115938A (ja) | 2010-01-20 | 2022-04-29 | 電子機器 |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015155682A Active JP6109890B2 (ja) | 2010-01-20 | 2015-08-06 | 電子機器 |
JP2017043399A Active JP6538099B2 (ja) | 2010-01-20 | 2017-03-08 | 電子機器 |
JP2019105366A Active JP6785918B2 (ja) | 2010-01-20 | 2019-06-05 | 電子機器 |
JP2020179798A Withdrawn JP2021039355A (ja) | 2010-01-20 | 2020-10-27 | 電子機器 |
JP2022075546A Withdrawn JP2022115938A (ja) | 2010-01-20 | 2022-04-29 | 電子機器 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9703423B2 (ja) |
JP (6) | JP5792469B2 (ja) |
KR (2) | KR101889382B1 (ja) |
CN (1) | CN102713999B (ja) |
TW (1) | TWI526734B (ja) |
WO (1) | WO2011089848A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8803063B2 (en) | 2010-02-19 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Photodetector circuit |
KR101784676B1 (ko) * | 2010-03-08 | 2017-10-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조방법 |
WO2011145537A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9252171B2 (en) | 2010-09-06 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
JP5622270B2 (ja) * | 2010-10-28 | 2014-11-12 | Necカシオモバイルコミュニケーションズ株式会社 | 入力表示制御装置、入力表示制御方法およびプログラム |
CN103959363B (zh) * | 2011-12-07 | 2016-04-27 | 夏普株式会社 | 光传感器电路的动作方法、以及具备该光传感器电路的显示装置的动作方法 |
TWI486847B (zh) * | 2012-03-15 | 2015-06-01 | 義隆電子股份有限公司 | 觸控面板的提高感應圖框產生率之掃描方法及其觸控面板裝置 |
US8994891B2 (en) | 2012-05-16 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
US9147706B2 (en) | 2012-05-29 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having sensor circuit having amplifier circuit |
WO2014077295A1 (en) | 2012-11-15 | 2014-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
CN104201106A (zh) * | 2014-08-26 | 2014-12-10 | 湖南普照爱伯乐平板显示器件有限公司 | 一种薄膜晶体管制作方法、系统及薄膜晶体管 |
JP2016066065A (ja) | 2014-09-05 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 表示装置、および電子機器 |
WO2016087999A1 (ja) | 2014-12-01 | 2016-06-09 | 株式会社半導体エネルギー研究所 | 表示装置、該表示装置を有する表示モジュール、及び該表示装置または該表示モジュールを有する電子機器 |
US10162462B2 (en) * | 2017-05-01 | 2018-12-25 | Synaptics Incorporated | Integrating capacitive sensing with an optical sensor |
KR102416838B1 (ko) * | 2017-10-12 | 2022-07-05 | 삼성전자주식회사 | 디스플레이 장치 및 그 제어 방법 |
KR20200066500A (ko) * | 2018-11-30 | 2020-06-10 | 삼성디스플레이 주식회사 | 표시장치 |
TWI749736B (zh) * | 2020-07-31 | 2021-12-11 | 致伸科技股份有限公司 | 具有多區發光之鍵盤及其發光模組 |
KR20230048213A (ko) * | 2021-10-01 | 2023-04-11 | 삼성디스플레이 주식회사 | 표시 장치 |
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JP2011170337A (ja) | 2011-09-01 |
US20180018035A1 (en) | 2018-01-18 |
TW201137448A (en) | 2011-11-01 |
JP2016027402A (ja) | 2016-02-18 |
KR101889382B1 (ko) | 2018-08-17 |
JP2022115938A (ja) | 2022-08-09 |
KR20180093109A (ko) | 2018-08-20 |
JP2017146604A (ja) | 2017-08-24 |
CN102713999A (zh) | 2012-10-03 |
JP6538099B2 (ja) | 2019-07-03 |
US9703423B2 (en) | 2017-07-11 |
JP6109890B2 (ja) | 2017-04-05 |
US10324564B2 (en) | 2019-06-18 |
WO2011089848A1 (en) | 2011-07-28 |
KR20120112780A (ko) | 2012-10-11 |
JP2019194708A (ja) | 2019-11-07 |
TWI526734B (zh) | 2016-03-21 |
US20110175833A1 (en) | 2011-07-21 |
KR102031848B1 (ko) | 2019-10-14 |
JP2021039355A (ja) | 2021-03-11 |
CN102713999B (zh) | 2016-01-20 |
JP6785918B2 (ja) | 2020-11-18 |
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