JP2012079293A - 電子機器 - Google Patents
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- JP2012079293A JP2012079293A JP2011192079A JP2011192079A JP2012079293A JP 2012079293 A JP2012079293 A JP 2012079293A JP 2011192079 A JP2011192079 A JP 2011192079A JP 2011192079 A JP2011192079 A JP 2011192079A JP 2012079293 A JP2012079293 A JP 2012079293A
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- 238000003384 imaging method Methods 0.000 abstract description 14
- 230000008859 change Effects 0.000 abstract description 13
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- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 37
- 239000004973 liquid crystal related substance Substances 0.000 description 24
- 230000006870 function Effects 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000012905 input function Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 125000002066 L-histidyl group Chemical group [H]N1C([H])=NC(C([H])([H])[C@](C(=O)[*])([H])N([H])[H])=C1[H] 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2354/00—Aspects of interface with display user
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thin Film Transistor (AREA)
- Position Input By Displaying (AREA)
Abstract
【解決手段】FDの電位の変化を抑えるため、FDと信号線との寄生容量が小さくなる、或いは、寄生容量がなくなるように、FDと撮像用信号線(PR配線や、TX配線や、SE配線)との間、またはFDと表示用信号線との間にシールド配線を配置する画素レイアウト構成とする。シールド配線としては、撮像用電源線、表示用電源線、GND配線、またはコモン電位配線などの電位が固定された共通配線を用いる。
【選択図】図3
Description
本実施の形態では、画像表示を行う表示部1032を有する電子機器1030の一例を図1(A)及び図1(B)に示す。
本実施の形態では、図3と一部異なる回路配置を図5とし、画素レイアウトの一例を図7に示す。
本実施の形態においては、上記実施の形態で説明したタッチ入力機能を有する表示部(タッチパネル)を具備する電子機器の例について説明する。
101:画素回路
103:画素
104:画素
105:画素電極
106:フォトセンサ
107:信号線に接続された表示素子駆動回路
108:走査線に接続された表示素子駆動回路
109:フォトセンサ読み出し回路
110:フォトセンサ駆動回路
113:画素
114:画素
115:画素電極
125:画素電極
135:画素電極
Claims (6)
- 第1の画素電極及び第1の信号線に電気的に接続された第1のトランジスタと、
フォトダイオードに電気的に接続された第2のトランジスタと、
第2の画素電極及び第2の信号線に電気的に接続された第3のトランジスタとを有し、
第2のトランジスタは、電荷を蓄積するノードと電気的に接続し、
ノードは、第1のトランジスタと電気的に接続された前記第1の信号線との間に第1のシールド配線を有し、
ノードは、第3のトランジスタと電気的に接続された前記第2の信号線との間に第2のシールド配線を有する画素構成を有する電子機器。 - 請求項1において、第1のシールド配線及び第2のシールド配線は、電位が固定された共通配線であることを特徴の一とする電子機器。
- 画素電極及び第1の信号線に電気的に接続された第1のトランジスタと、
フォトダイオードに電気的に接続された第2のトランジスタと、
第2のトランジスタは、電荷を蓄積するノードと電気的に接続し、
ノードは、第1のトランジスタと電気的に接続された前記第1の信号線との間にシールド配線を有し、
ノードは、第2のトランジスタのゲートと電気的に接続された第2の信号線との間に前記シールド配線を有する電子機器。 - 画素電極及び第1の信号線に電気的に接続された第1のトランジスタと、
フォトダイオードに電気的に接続された第2のトランジスタと、
第2のトランジスタは、電荷を蓄積するノードと電気的に接続し、
ノードは、第1のトランジスタと電気的に接続された前記第1の信号線との間にシールド配線を有し、
ノードは、フォトダイオードと電気的に接続された第2の信号線との間に前記シールド配線を有する電子機器。 - 画素電極及び第1の信号線に電気的に接続された第1のトランジスタと、
フォトダイオードに電気的に接続された第2のトランジスタと、
電荷を蓄積するノードをゲートとする第3のトランジスタと、
第3のトランジスタと電気的に接続された第4のトランジスタとを有し、
第2のトランジスタは、前記ノードと電気的に接続し、
ノードは、第1のトランジスタと電気的に接続された前記第1の信号線との間にシールド配線を有し、
ノードは、第4のトランジスタのゲートと電気的に接続された第2の信号線との間に前記シールド配線を有する電子機器。 - 請求項3乃至5のいずれか一において、シールド配線は、電位が固定された共通配線であることを特徴の一とする電子機器。
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JP2011192079A JP5745369B2 (ja) | 2010-09-06 | 2011-09-02 | 電子機器 |
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JP2010198928 | 2010-09-06 | ||
JP2010198928 | 2010-09-06 | ||
JP2011192079A JP5745369B2 (ja) | 2010-09-06 | 2011-09-02 | 電子機器 |
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JP2015093937A Division JP5919418B2 (ja) | 2010-09-06 | 2015-05-01 | 電子機器 |
JP2015093938A Division JP5918416B2 (ja) | 2010-09-06 | 2015-05-01 | 電子機器 |
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JP2012079293A true JP2012079293A (ja) | 2012-04-19 |
JP2012079293A5 JP2012079293A5 (ja) | 2014-08-07 |
JP5745369B2 JP5745369B2 (ja) | 2015-07-08 |
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JP2011192079A Active JP5745369B2 (ja) | 2010-09-06 | 2011-09-02 | 電子機器 |
JP2015093937A Active JP5919418B2 (ja) | 2010-09-06 | 2015-05-01 | 電子機器 |
JP2015093938A Active JP5918416B2 (ja) | 2010-09-06 | 2015-05-01 | 電子機器 |
JP2016063136A Active JP6125067B2 (ja) | 2010-09-06 | 2016-03-28 | 電子機器 |
JP2016063137A Active JP6125068B2 (ja) | 2010-09-06 | 2016-03-28 | 電子機器 |
JP2017074245A Withdrawn JP2017191932A (ja) | 2010-09-06 | 2017-04-04 | 電子機器 |
JP2018190713A Active JP6661727B2 (ja) | 2010-09-06 | 2018-10-09 | 電子機器 |
JP2019209374A Active JP6698931B2 (ja) | 2010-09-06 | 2019-11-20 | 半導体装置 |
JP2020006840A Active JP6670986B1 (ja) | 2010-09-06 | 2020-01-20 | 半導体装置 |
JP2020021223A Active JP6803486B2 (ja) | 2010-09-06 | 2020-02-12 | 電子機器 |
JP2020079091A Active JP6868729B2 (ja) | 2010-09-06 | 2020-04-28 | 半導体装置 |
JP2020112625A Active JP6768170B1 (ja) | 2010-09-06 | 2020-06-30 | 撮像装置 |
JP2020198092A Withdrawn JP2021060583A (ja) | 2010-09-06 | 2020-11-30 | 電子機器 |
JP2021067236A Active JP6941250B2 (ja) | 2010-09-06 | 2021-04-12 | 固体撮像装置、電子機器 |
JP2022059736A Withdrawn JP2022093351A (ja) | 2010-09-06 | 2022-03-31 | 電子機器 |
JP2023069817A Pending JP2023106387A (ja) | 2010-09-06 | 2023-04-21 | 固体撮像装置及び電子機器 |
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JP2015093937A Active JP5919418B2 (ja) | 2010-09-06 | 2015-05-01 | 電子機器 |
JP2015093938A Active JP5918416B2 (ja) | 2010-09-06 | 2015-05-01 | 電子機器 |
JP2016063136A Active JP6125067B2 (ja) | 2010-09-06 | 2016-03-28 | 電子機器 |
JP2016063137A Active JP6125068B2 (ja) | 2010-09-06 | 2016-03-28 | 電子機器 |
JP2017074245A Withdrawn JP2017191932A (ja) | 2010-09-06 | 2017-04-04 | 電子機器 |
JP2018190713A Active JP6661727B2 (ja) | 2010-09-06 | 2018-10-09 | 電子機器 |
JP2019209374A Active JP6698931B2 (ja) | 2010-09-06 | 2019-11-20 | 半導体装置 |
JP2020006840A Active JP6670986B1 (ja) | 2010-09-06 | 2020-01-20 | 半導体装置 |
JP2020021223A Active JP6803486B2 (ja) | 2010-09-06 | 2020-02-12 | 電子機器 |
JP2020079091A Active JP6868729B2 (ja) | 2010-09-06 | 2020-04-28 | 半導体装置 |
JP2020112625A Active JP6768170B1 (ja) | 2010-09-06 | 2020-06-30 | 撮像装置 |
JP2020198092A Withdrawn JP2021060583A (ja) | 2010-09-06 | 2020-11-30 | 電子機器 |
JP2021067236A Active JP6941250B2 (ja) | 2010-09-06 | 2021-04-12 | 固体撮像装置、電子機器 |
JP2022059736A Withdrawn JP2022093351A (ja) | 2010-09-06 | 2022-03-31 | 電子機器 |
JP2023069817A Pending JP2023106387A (ja) | 2010-09-06 | 2023-04-21 | 固体撮像装置及び電子機器 |
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JP (16) | JP5745369B2 (ja) |
Cited By (1)
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KR20160001673A (ko) * | 2014-06-27 | 2016-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 전자 기기 |
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US9541386B2 (en) * | 2012-03-21 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Distance measurement device and distance measurement system |
JP5994344B2 (ja) * | 2012-04-04 | 2016-09-21 | ソニー株式会社 | 固体撮像装置、電子機器 |
US9134864B2 (en) | 2012-05-31 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device with controller and touch panel for rapid restoration from power-saving mode |
CN103354082B (zh) * | 2013-06-26 | 2015-09-09 | 京东方科技集团股份有限公司 | 一种触摸驱动电路、液晶面板及其驱动方法 |
EP2860720A1 (en) * | 2013-10-10 | 2015-04-15 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Electro-optical unit for a picture element that can be programmed by electromagnetic radiation |
US9674470B2 (en) * | 2014-04-11 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and method for driving electronic device |
JP6545541B2 (ja) * | 2014-06-25 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 撮像装置、監視装置、及び電子機器 |
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