JP2016027632A - 撮像装置及び電子機器 - Google Patents
撮像装置及び電子機器 Download PDFInfo
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- JP2016027632A JP2016027632A JP2015127345A JP2015127345A JP2016027632A JP 2016027632 A JP2016027632 A JP 2016027632A JP 2015127345 A JP2015127345 A JP 2015127345A JP 2015127345 A JP2015127345 A JP 2015127345A JP 2016027632 A JP2016027632 A JP 2016027632A
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Abstract
Description
本実施の形態では、本発明の一態様の撮像装置について、図面を参照して説明する。
図1(A)は、本発明の一態様の撮像装置100の構成例を示す平面図である。撮像装置100は、画素部110と、第1の回路260、第2の回路270、第3の回路280、及び第4の回路290を有する。画素部110は、p行q列(p及びqは2以上の自然数)のマトリクス状に配置された複数の画素111(撮像素子)を有する。第1の回路260乃至第4の回路290は、複数の画素111に接続し、複数の画素111を駆動するための信号を供給する機能を有する。なお、本明細書等において、第1の回路260乃至第4の回路290などを「周辺回路」もしくは「駆動回路」と呼ぶ場合がある。例えば、第1の回路260は周辺回路の一部と言える。
画素111の構成例について、図3乃至図5を用いて説明する。画素111は、トランジスタ131、トランジスタ132、トランジスタ133、トランジスタ134、容量素子135、及び光電変換素子136などの機能素子を有する。また、画素111を構成する機能素子のうち、光電変換素子136以外の機能素子で構成した回路を画素駆動回路112と呼ぶ。なお、画素駆動回路112は光電変換素子136と電気的に接続される。画素駆動回路112は、光電変換素子136の受光量に応じたアナログ信号を生成する機能を有する。
撮像装置100が有する画素111を副画素として用いて、複数の画素111それぞれに異なる波長域の光を透過するフィルタ(カラーフィルタ)を設けることで、カラー画像表示を実現するための情報を取得することができる。
本実施の形態では、画素111とは異なる構成を有する画素111aについて、図面を用いて説明する。画素111aは、画素駆動回路112に代えて画素駆動回路512を有する。すなわち、画素111aは、画素駆動回路512と光電変換素子136を有する。また、画素111aは画素111と同様の材料及び方法で作製することができる。説明の重複を軽減するため、本実施の形態では、主に画素111aの画素111と異なる点について説明する。本実施の形態に説明の無い部分については、他の実施の形態を参酌して理解することができる。
本実施の形態では、画素111及び画素111aとは異なる構成を有する画素111bについて、図面を用いて説明する。画素111bは、画素111が有する画素駆動回路112に代えて、画素駆動回路712を有する。すなわち、画素111bは、画素駆動回路712と光電変換素子136を有する。また、画素111bは画素111と同様の材料及び方法で作製することができる。説明の重複を軽減するため、本実施の形態では、主に画素111bの画素111と異なる点について説明する。本実施の形態に説明の無い部分については、他の実施の形態を参酌して理解することができる。
本実施の形態では、上記実施の形態に示した撮像装置100を固体撮像素子の一種であるCMOSイメージセンサで構成する場合の一例について、図21乃至図25を用いて説明する。図21に示す画素領域251は、撮像装置100が有する画素111、画素111a、または画素111bの一部の断面図である。図21に示す周辺回路領域252は、撮像装置100が有する周辺回路の一部の断面図である。また、図21に示すトランジスタ134の拡大図を図22(A)に示す。また、図21に示す容量素子135の拡大図を図22(B)に示す。また、図21に示すトランジスタ281の拡大図を図24(A)に示す。また、図21に示すトランジスタ282の拡大図を図24(B)に示す。また、図21に示すトランジスタ134は、例えば画素111aのトランジスタ541に相当する。なお、本実施の形態に示すトランジスタ134の構造は、上記実施の形態に示す他のトランジスタにも用いることができる。
ここで、半導体層242a、半導体層242b、および半導体層242cの積層により構成される半導体層242の機能およびその効果について、図23示すエネルギーバンド構造図を用いて説明する。図23は、図22(A)にC1−C2の一点鎖線で示す部位のエネルギーバンド構造図である。図23は、トランジスタ134のチャネル形成領域のエネルギーバンド構造を示している。
ここで、半導体層242に適用可能な酸化物半導体膜について詳細に説明しておく。
周辺回路及び画素回路に、OR回路、AND回路、NAND回路、及びNOR回路などの論理回路や、インバータ回路、バッファ回路、シフトレジスタ回路、フリップフロップ回路、エンコーダ回路、デコーダ回路、増幅回路、アナログスイッチ回路、積分回路、微分回路、及びメモリ素子などを適宜設けることができる。
本実施の形態では、上記実施の形態に示したトランジスタと置き換えて使用することができるトランジスタの構成例について、図31乃至図35を用いて説明する。また、ノードの構成例について、図36を用いて説明する。
図31(A1)に例示するトランジスタ410は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタである。トランジスタ410は、絶縁層109上にゲート電極として機能できる電極246を有する。また、電極246上に絶縁層117を介して半導体層242を有する。電極246は配線121と同様の材料及び方法で形成することができる。
図32(A1)に例示するトランジスタ430は、トップゲート型のトランジスタの1つである。トランジスタ430は、絶縁層109の上に半導体層242を有し、半導体層242および絶縁層109上に、半導体層242の一部に接する電極244および半導体層242の一部に接する電極245を有し、半導体層242、電極244、および電極245上に絶縁層117を有し、絶縁層117上に電極246を有する。
図33に例示するトランジスタ450は、半導体層242bの上面及び側面が半導体層242cに覆われた構造を有する。図33(A)はトランジスタ450の上面図である。図33(B)は、図33(A)中のX1−X2の一点鎖線で示した部位の断面図(チャネル長方向の断面図)である。図33(C)は、図33(A)中のY1−Y2の一点鎖線で示した部位の断面図(チャネル幅方向の断面図)である。
図36の断面図に示すように、容量素子135を構成する電極245よりも下層に絶縁層を介して電極212を設けることで、ノード152として機能できる電極245の電位変動を抑えることができる。電極212は、配線121と同様の材料及び方法で形成することができる。
本実施の形態では、本発明の一態様に係る撮像装置を用いた電子機器の一例について説明する。
101 基板
102 絶縁層
103 絶縁層
104 絶縁層
105 絶縁層
106 コンタクトプラグ
107 絶縁層
108 絶縁層
109 絶縁層
110 画素部
111 画素
112 画素駆動回路
113 画素
115 絶縁層
116 絶縁層
117 絶縁層
118 絶縁層
119 絶縁層
121 配線
122 配線
123 配線
124 配線
125 配線
126 配線
127 配線
128 配線
129 配線
131 トランジスタ
132 トランジスタ
133 トランジスタ
134 トランジスタ
135 容量素子
136 光電変換素子
137 入力端子
141 配線
142 配線
143 配線
144 配線
145 配線
151 ノード
152 ノード
209 絶縁層
212 電極
213 電極
214 層
217 絶縁層
221 p型半導体
222 i型半導体
223 n型半導体
224 開口
225 開口
242 半導体層
243 電極
244 電極
245 電極
246 電極
251 画素領域
252 周辺回路領域
254 ノード
255 不純物元素
256 ノード
257 容量素子
260 回路
261 信号処理回路
262 列駆動回路
263 出力回路
264 回路
266 配線
267 配線
268 配線
269 配線
270 回路
273 電極
277 絶縁層
280 回路
281 トランジスタ
282 トランジスタ
283 i型半導体
284 低濃度p型不純物領域
285 p型半導体
286 絶縁層
287 電極
288 側壁
289 トランジスタ
290 回路
291 フォトダイオード
292 トランジスタ
293 トランジスタ
294 低濃度n型不純物領域
295 n型半導体
382 Ec
386 Ec
390 トラップ準位
410 トランジスタ
411 トランジスタ
420 トランジスタ
421 トランジスタ
430 トランジスタ
431 トランジスタ
440 トランジスタ
441 トランジスタ
450 トランジスタ
451 トランジスタ
452 トランジスタ
512 画素駆動回路
522 配線
523 配線
524 配線
525 配線
526 配線
527 配線
528 配線
529 配線
531 配線
532 配線
541 トランジスタ
542 トランジスタ
543 トランジスタ
544 トランジスタ
545 トランジスタ
551 容量素子
552 容量素子
561 ノード
562 ノード
563 ノード
600 レンズ
602 フィルタ
604 配線層
660 光
712 画素駆動回路
721 配線
722 配線
723 配線
724 配線
725 配線
726 配線
727 配線
728 配線
729 配線
731 配線
741 トランジスタ
742 トランジスタ
743 トランジスタ
744 トランジスタ
745 トランジスタ
751 容量素子
761 ノード
762 ノード
901 筐体
902 筐体
903 表示部
904 表示部
905 マイク
906 スピーカー
907 操作スイッチ
908 スタイラス
909 カメラ
911 筐体
912 表示部
919 カメラ
921 筐体
922 シャッターボタン
923 マイク
925 レンズ
927 発光部
931 筐体
932 表示部
933 リストバンド
939 カメラ
941 筐体
942 筐体
943 表示部
944 操作スイッチ
945 レンズ
946 接続部
951 筐体
952 表示部
954 スピーカー
956 入出力端子
957 マイク
959 カメラ
1406 トランジスタ
1408 トランジスタ
1410 ノード
1412 フォトダイオード
1414 トランジスタ
1422 フォトダイオード
1424 トランジスタ
1430 配線
1432 フォトダイオード
1434 トランジスタ
1442 フォトダイオード
1444 トランジスタ
1451 配線
1452 配線
1453 配線
1454 配線
1461 配線
1470 配線
1800 シフトレジスタ回路
1810 シフトレジスタ回路
1900 バッファ回路
1910 バッファ回路
2100 アナログスイッチ回路
2110 垂直出力線
2200 出力線
111a 画素
111b 画素
111B 画素
111G 画素
111R 画素
242a 半導体層
242b 半導体層
242c 半導体層
243a 電極
243b 電極
264a コンパレータ
264b カウンタ回路
272c 半導体層
383a Ec
383b Ec
383c Ec
602B フィルタ
602G フィルタ
602R フィルタ
Claims (7)
- 光電変換素子と、第1の回路と、を有し、
前記第1の回路は、第1乃至第5のトランジスタと、容量素子と、第1乃至第9の配線と、を有し、
前記光電変換素子は、n型半導体と、p型半導体と、を有し、
前記第1の配線は、前記n型半導体または前記p型半導体の一方と電気的に接続され、
前記n型半導体または前記p型半導体の他方は、第1のノードと電気的に接続され、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1のノードと電気的に接続され、
前記第1のトランジスタのゲートは前記第2の配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は前記第7の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は前記第8の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は前記第3のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのゲートは前記第3の配線と電気的に接続され、
記第3のトランジスタのソースまたはドレインの他方は前記第4の配線と電気的に接続され、
前記第3のトランジスタのゲートは第2のノードと電気的に接続され、
前記第4のトランジスタのソースまたはドレインの一方は前記第1のノードと電気的に接続され、
前記第4のトランジスタのソースまたはドレインの他方は前記第2のノードと電気的に接続され、
前記第4のトランジスタのゲートは第6の配線と電気的に接続され、
前記第5のトランジスタのソースまたはドレインの一方は前記第9の配線と電気的に接され、
前記第5のトランジスタのソースまたはドレインの他方は前記第1のノードと電気的に接され、
前記容量素子の一方の電極は前記第2のノードと電気的に接続され、
前記容量素子の他方の電極は前記第4の配線と電気的に接続され、
前記第5のトランジスタのゲートは前記第5の配線と電気的に接続された撮像装置。 - 請求項1において、
前記光電変換素子はi型半導体を有し、
平面視において、
前記第1の回路が有する金属材料及び前記第1の回路が有する半導体材料の、
いずれとも重ならない前記i型半導体の合計面積が、
前記i型半導体の全体の面積の65%以上である撮像装置。 - 請求項1において、
前記光電変換素子はi型半導体を有し、
平面視において、
前記第1の回路を構成する遮光性材料と重ならない前記i型半導体の合計面積が、
前記i型半導体の全体の面積の65%以上である撮像装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第1乃至前記第5のトランジスタが有する半導体は、酸化物半導体であることを特徴とする撮像装置。 - 請求項1乃至請求項4のいずれか一項において、
前記第1乃至前記第5のトランジスタが有する半導体は、
前記i型半導体と異なる禁制帯幅を有することを特徴とする撮像装置。 - 少なくとも第1及び第2の光電変換素子を有する撮像装置であって、
前記第1及び前記第2の光電変換素子はi型半導体を有し、
前記第1の光電変換素子が有する前記i型半導体と、
前記第2の光電変換素子が有する前記i型半導体は、
n型半導体またはp型半導体を介して隣接することを特徴とする撮像装置。 - 請求項1乃至請求項6のいずれか一に記載の撮像装置と、
表示装置、操作スイッチ、マイク、または、スピーカーと、
を有する電子機器。
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JP2022107644A (ja) | 2022-07-22 |
KR20160001673A (ko) | 2016-01-06 |
KR102369729B1 (ko) | 2022-03-04 |
JP6633845B2 (ja) | 2020-01-22 |
KR20220031590A (ko) | 2022-03-11 |
KR20230129327A (ko) | 2023-09-08 |
KR102572674B1 (ko) | 2023-08-31 |
JP7372390B2 (ja) | 2023-10-31 |
TW201603259A (zh) | 2016-01-16 |
US10134789B2 (en) | 2018-11-20 |
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JP2023181271A (ja) | 2023-12-21 |
JP2020047945A (ja) | 2020-03-26 |
US20150380450A1 (en) | 2015-12-31 |
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TWI700823B (zh) | 2020-08-01 |
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