JP2013042481A - 半導体装置及び半導体装置の駆動方法 - Google Patents
半導体装置及び半導体装置の駆動方法 Download PDFInfo
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Abstract
【解決手段】列方向及び行方向に配設された複数の画素と、複数の画素の数より少数配設された第1のトランジスタと、を有し、複数の画素は、照射される光の強度により流れる電流値が定まるフォトダイオードと、電流値により蓄積される電荷の量が定まり、且つ電荷の量を情報として含む出力信号を生成する増幅回路と、をそれぞれ有し、増幅回路は、蓄積された電荷を保持し、且つフォトダイオードの陰極と電気的に接続される第2のトランジスタを少なくとも有し、同じ列に属する、n行(nは自然数)の画素が有する前記フォトダイオードの陰極と、n+1行に配設された画素が有するフォトダイオードの陰極のそれぞれは、第1のトランジスタと電気的に接続されている半導体装置である。
【選択図】図2
Description
本発明の一態様に係る固体撮像装置の構成、及び当該固体撮像装置が有するフォトセンサの構成及び当該フォトセンサの接続関係について、図面を参照して説明する。なお、本実施の形態では、グローバルシャッタ方式を用いる場合について説明する。
本実施の形態では、固体撮像装置100について、ローリングシャッタ方式を用いる場合について説明する。
本実施の形態では、本発明の一態様に係る固体撮像装置の作製方法について説明する。ここでは、図3(B)に示したフォトセンサ205の作製方法を例に説明する。なお、トランジスタ217は、トランジスタ215と同様にして作製することができるため、以下、説明にて参照する図面に図示していない。さらに、トランジスタ215についての記載は、トランジスタ217においても適用される。
上記実施の形態で説明した固体撮像装置は、表示装置、携帯電話、携帯型ゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラなどの電子機器に用いることができる。上記実施の形態で説明した固体撮像装置を用いた電子機器の具体例を図12に示す。
101 画素部
103 水平方向選択回路
105 データ出力回路
107 データ処理回路
109 選択線
111 出力線
113 画素
201 スイッチング素子
202 副画素
203 副画素
205 フォトセンサ
206 フォトセンサ
207 フォトダイオード
209 増幅回路
211 トランジスタ
213 トランジスタ
215 トランジスタ
217 トランジスタ
300 リセット期間
301 露光期間
302 読み出し期間
700 基板
701 絶縁膜
702 半導体膜
703 半導体膜
707 ゲート電極
708 絶縁膜
711 配線
712 絶縁膜
713 ゲート電極
714 ゲート絶縁膜
715 酸化物半導体膜
722 絶縁膜
727 領域
728 領域
729 領域
5001 筐体
5002 表示部
5003 支持台
5004 撮像部
5101 筐体
5102 表示部
5103 操作キー
5104 撮像部
5301 筐体
5302 筐体
5303 表示部
5304 表示部
5305 マイクロホン
5306 スピーカー
5307 操作キー
5308 スタイラス
5309 撮像部
5401 筐体
5402 表示部
5403 音声入力部
5404 音声出力部
5405 操作キー
5406 撮像部
Claims (6)
- 列方向及び行方向に配設された複数の画素と、
前記複数の画素の数より少数配設された第1のトランジスタと、を有し、
前記複数の画素は、照射される光の強度により流れる電流値が定まるフォトダイオードと、前記電流値により蓄積される電荷の量が定まり、且つ前記電荷の量を情報として含む出力信号を生成する増幅回路と、をそれぞれに有し、
前記増幅回路は、蓄積された前記電荷を保持し、且つ前記フォトダイオードの陰極と電気的に接続される第2のトランジスタを少なくとも有し、
同じ列に属する、n行(nは自然数)に配設された画素が有する前記フォトダイオードの陰極と、n+1行に配設された画素が有する前記フォトダイオードの陰極のそれぞれは、前記第1のトランジスタと電気的に接続されていることを特徴とする半導体装置。 - 列方向及び行方向に配設された複数の画素と、
前記複数の画素の数より少数配設された第1のトランジスタと、を有し、
前記複数の画素の各画素は、少なくとも赤色、青色及び緑色の副画素を有し、
前記副画素は、照射される光の強度により流れる電流値が定まるフォトダイオードと、前記電流値により蓄積される電荷の量が定まり、且つ前記電荷の量を情報として含む出力信号を生成する増幅回路と、をそれぞれに有し、
前記増幅回路は、蓄積された前記電荷を保持し、且つ前記フォトダイオードの陰極と電気的に接続される第2のトランジスタを少なくとも有し、
同じ列に属する、n行(nは自然数)に配設された前記副画素が有する前記フォトダイオードの陰極と、n+1行に配設され、前記n行と同色の前記副画素が有する前記フォトダイオードの陰極のそれぞれは、前記第1のトランジスタと電気的に接続されていることを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第1のトランジスタのオフ電流密度及び前記第2のトランジスタのオフ電流密度は、100yA/μm以下であることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第1のトランジスタ及び前記第2のトランジスタは、シリコンよりもバンドギャップが広く、真性キャリア密度がシリコンよりも低い半導体材料をチャネル形成領域に含んでいることを特徴とする半導体装置。 - 請求項4において、
前記半導体材料は、酸化物半導体であることを特徴とする半導体装置。 - 請求項1乃至請求項5のいずれか一に記載の半導体装置の駆動方法であって、
外光の照度により、前記第1のトランジスタのオン状態及びオフ状態を選択し、
前記オン状態では、同じ列に属する、前記n行(nは自然数)の前記画素が有する前記フォトダイオードと、前記n+1行の前記画素が有する前記フォトダイオードとを導通させること、又は、同じ列に属する、前記n行の前記副画素が有する前記フォトダイオードと、前記n+1行の前記副画素が有する前記フォトダイオードとを導通させることを特徴とする半導体装置の駆動方法。
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TWI559769B (zh) | 2016-11-21 |
KR20140044896A (ko) | 2014-04-15 |
JP6767549B2 (ja) | 2020-10-14 |
JP2017135395A (ja) | 2017-08-03 |
JP2018067742A (ja) | 2018-04-26 |
JP2019212920A (ja) | 2019-12-12 |
US8952313B2 (en) | 2015-02-10 |
WO2013011844A1 (en) | 2013-01-24 |
JP6110552B1 (ja) | 2017-04-05 |
US9911782B2 (en) | 2018-03-06 |
US20130015326A1 (en) | 2013-01-17 |
JP2021002673A (ja) | 2021-01-07 |
US20150145006A1 (en) | 2015-05-28 |
JP2023052874A (ja) | 2023-04-12 |
JP6281003B2 (ja) | 2018-02-14 |
JP6705843B2 (ja) | 2020-06-03 |
KR101962261B1 (ko) | 2019-03-26 |
JP6049963B2 (ja) | 2016-12-21 |
JP2021108392A (ja) | 2021-07-29 |
JP2017073804A (ja) | 2017-04-13 |
TW201320740A (zh) | 2013-05-16 |
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