JP5727963B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5727963B2 JP5727963B2 JP2012095280A JP2012095280A JP5727963B2 JP 5727963 B2 JP5727963 B2 JP 5727963B2 JP 2012095280 A JP2012095280 A JP 2012095280A JP 2012095280 A JP2012095280 A JP 2012095280A JP 5727963 B2 JP5727963 B2 JP 5727963B2
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- JP
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- Prior art keywords
- oxide semiconductor
- transistor
- film
- insulating layer
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1、図2及び図4を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。図1(A)はトランジスタ162の平面図であり、図1(B)は、図1(A)における鎖線A1−A2の断面図であり、トランジスタ162のチャネル長(L)方向の断面図の一例を示している。
本実施の形態では、半導体装置の作製方法の他の一形態を、図3を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態では、実施の形態1又は実施の形態2に示すトランジスタ162を使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。なお、本実施の形態の半導体装置は、実施の形態1又は2で示すトランジスタ320、又はトランジスタ330を用いることもできる。
本実施の形態においては、実施の形態1又は実施の形態2に示すトランジスタ162を使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態3に示した構成と異なる構成について、図6及び図7を用いて説明を行う。なお、本実施の形態の半導体装置は、実施の形態1又は2で示すトランジスタ320、又はトランジスタ330を用いることもできる。
本実施の形態では、先の実施の形態で示した半導体装置を携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図8乃至図11を用いて説明する。
106 素子分離絶縁層
108 ゲート絶縁層
110 ゲート電極
116 チャネル形成領域
120 不純物領域
124 金属化合物領域
128 絶縁層
130 絶縁層
131 トレンチ
142a 電極層
142b 電極層
144 結晶性酸化物半導体膜
146 ゲート絶縁層
148 ゲート電極層
148b 導電層
150 絶縁層
152 絶縁層
156 配線
160 トランジスタ
162 トランジスタ
164 容量素子
250 メモリセル
251 メモリセルアレイ
251a メモリセルアレイ
251b メモリセルアレイ
253 周辺回路
254 容量素子
256 絶縁層
258 絶縁層
260 配線
262 導電層
300 下端コーナ部
302 非晶質酸化物半導体膜
304a 配線層
304b 配線層
306 絶縁層
308 平坦化絶縁膜
320 トランジスタ
330 トランジスタ
348 ゲート電極層
801 トランジスタ
803 トランジスタ
804 トランジスタ
805 トランジスタ
806 トランジスタ
807 Xデコーダー
808 Yデコーダー
811 トランジスタ
812 保持容量
813 Xデコーダー
814 Yデコーダー
901 RF回路
902 アナログベースバンド回路
903 デジタルベースバンド回路
904 バッテリー
905 電源回路
906 アプリケーションプロセッサ
907 CPU
908 DSP
909 インターフェイス(IF)
910 フラッシュメモリ
911 ディスプレイコントローラ
912 メモリ回路
913 ディスプレイ
914 表示部
915 ソースドライバ
916 ゲートドライバ
917 音声回路
918 キーボード
919 タッチセンサ
950 メモリ回路
951 メモリコントローラ
952 メモリ
953 メモリ
954 スイッチ
955 スイッチ
956 ディスプレイコントローラ
957 ディスプレイ
1001 バッテリー
1002 電源回路
1003 マイクロプロセッサ
1004 フラッシュメモリ
1005 音声回路
1006 キーボード
1007 メモリ回路
1008 タッチパネル
1009 ディスプレイ
1010 ディスプレイコントローラ
Claims (2)
- 絶縁層と、酸化物半導体膜と、を有し、
前記絶縁層は、複数のトレンチを有し、
前記トレンチは、下端に曲面を有する領域を有し、
前記酸化物半導体膜は、チャネル形成領域を有し、
前記チャネル形成領域は、前記絶縁層の曲面に接する第1の領域を有し、
前記第1の領域は、前記絶縁層の曲面に概略垂直なc軸を有する結晶を有し、
前記結晶は、前記絶縁層の曲面に沿った層状構造を有することを特徴とする半導体装置。 - 請求項1において、
前記絶縁層の曲面は、20nm以上60nm以下の曲率半径を有することを特徴とする半導体装置。
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JP2012095280A JP5727963B2 (ja) | 2011-04-22 | 2012-04-19 | 半導体装置 |
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JP2012095280A Active JP5727963B2 (ja) | 2011-04-22 | 2012-04-19 | 半導体装置 |
JP2015076480A Expired - Fee Related JP6129234B2 (ja) | 2011-04-22 | 2015-04-03 | 半導体装置 |
JP2017077983A Expired - Fee Related JP6356859B2 (ja) | 2011-04-22 | 2017-04-11 | 半導体装置 |
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JP2017077983A Expired - Fee Related JP6356859B2 (ja) | 2011-04-22 | 2017-04-11 | 半導体装置 |
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US (3) | US8809854B2 (ja) |
JP (3) | JP5727963B2 (ja) |
KR (1) | KR101985645B1 (ja) |
TW (1) | TWI538219B (ja) |
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US8772849B2 (en) * | 2011-03-10 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
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US9006803B2 (en) | 2011-04-22 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
US8932913B2 (en) | 2011-04-22 | 2015-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8878288B2 (en) | 2011-04-22 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8847233B2 (en) | 2011-05-12 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film |
JP6250883B2 (ja) | 2013-03-01 | 2017-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9607991B2 (en) | 2013-09-05 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI677989B (zh) | 2013-09-19 | 2019-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US20150177311A1 (en) * | 2013-12-19 | 2015-06-25 | Intermolecular, Inc. | Methods and Systems for Evaluating IGZO with Respect to NBIS |
CN106165106B (zh) | 2014-03-28 | 2020-09-15 | 株式会社半导体能源研究所 | 晶体管以及半导体装置 |
JP6857447B2 (ja) | 2015-01-26 | 2021-04-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN104795400B (zh) * | 2015-02-12 | 2018-10-30 | 合肥鑫晟光电科技有限公司 | 阵列基板制造方法、阵列基板和显示装置 |
JP2016154225A (ja) | 2015-02-12 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP6736321B2 (ja) | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US10985278B2 (en) * | 2015-07-21 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US11189736B2 (en) * | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6538598B2 (ja) | 2016-03-16 | 2019-07-03 | 株式会社東芝 | トランジスタ及び半導体記憶装置 |
KR102631152B1 (ko) | 2017-08-04 | 2024-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
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JP2015130536A (ja) | 2015-07-16 |
TWI538219B (zh) | 2016-06-11 |
US20170170334A1 (en) | 2017-06-15 |
KR101985645B1 (ko) | 2019-09-03 |
KR20120120065A (ko) | 2012-11-01 |
JP6129234B2 (ja) | 2017-05-17 |
JP6356859B2 (ja) | 2018-07-11 |
JP2017126789A (ja) | 2017-07-20 |
US8809854B2 (en) | 2014-08-19 |
US20120267696A1 (en) | 2012-10-25 |
TW201246555A (en) | 2012-11-16 |
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