JP5547076B2 - 半導体光素子アレイおよびその製造方法 - Google Patents

半導体光素子アレイおよびその製造方法 Download PDF

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JP5547076B2
JP5547076B2 JP2010526554A JP2010526554A JP5547076B2 JP 5547076 B2 JP5547076 B2 JP 5547076B2 JP 2010526554 A JP2010526554 A JP 2010526554A JP 2010526554 A JP2010526554 A JP 2010526554A JP 5547076 B2 JP5547076 B2 JP 5547076B2
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fine columnar
semiconductor
active layer
semiconductor optical
columnar crystal
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JPWO2010023921A1 (ja
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克巳 岸野
昭彦 菊池
寛人 関口
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Sophia School Corp
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JP2010526554A 2008-09-01 2009-08-27 半導体光素子アレイおよびその製造方法 Active JP5547076B2 (ja)

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JP2008224131 2008-09-01
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JP2008224129 2008-09-01
JP2008224129 2008-09-01
PCT/JP2009/004173 WO2010023921A1 (ja) 2008-09-01 2009-08-27 半導体光素子アレイおよびその製造方法
JP2010526554A JP5547076B2 (ja) 2008-09-01 2009-08-27 半導体光素子アレイおよびその製造方法

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US (1) US9224595B2 (enExample)
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