TWI470828B - 半導體光元件陣列及其製造方法 - Google Patents

半導體光元件陣列及其製造方法 Download PDF

Info

Publication number
TWI470828B
TWI470828B TW98129403A TW98129403A TWI470828B TW I470828 B TWI470828 B TW I470828B TW 98129403 A TW98129403 A TW 98129403A TW 98129403 A TW98129403 A TW 98129403A TW I470828 B TWI470828 B TW I470828B
Authority
TW
Taiwan
Prior art keywords
semiconductor
fine columnar
layer
crystal
light
Prior art date
Application number
TW98129403A
Other languages
English (en)
Chinese (zh)
Other versions
TW201027800A (en
Inventor
岸野克巳
菊池昭彥
關口寬人
Original Assignee
學校法人上智學院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 學校法人上智學院 filed Critical 學校法人上智學院
Publication of TW201027800A publication Critical patent/TW201027800A/zh
Application granted granted Critical
Publication of TWI470828B publication Critical patent/TWI470828B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
TW98129403A 2008-09-01 2009-09-01 半導體光元件陣列及其製造方法 TWI470828B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008224131 2008-09-01
JP2008224129 2008-09-01

Publications (2)

Publication Number Publication Date
TW201027800A TW201027800A (en) 2010-07-16
TWI470828B true TWI470828B (zh) 2015-01-21

Family

ID=41721104

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98129403A TWI470828B (zh) 2008-09-01 2009-09-01 半導體光元件陣列及其製造方法

Country Status (7)

Country Link
US (1) US9224595B2 (enExample)
EP (1) EP2333847B1 (enExample)
JP (2) JP5547076B2 (enExample)
KR (1) KR101567121B1 (enExample)
CN (1) CN102187479B (enExample)
TW (1) TWI470828B (enExample)
WO (1) WO2010023921A1 (enExample)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010012711A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
KR101710159B1 (ko) * 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
CN103190005A (zh) * 2010-11-04 2013-07-03 皇家飞利浦电子股份有限公司 基于结晶弛豫结构的固态发光器件
GB201020843D0 (en) * 2010-12-09 2011-01-19 Univ Nottingham Solar cells based on InGaN
FR2983639B1 (fr) * 2011-12-01 2014-07-18 Commissariat Energie Atomique Dispositif optoelectronique comprenant des nanofils de structure coeur/coquille
WO2013121289A2 (en) * 2012-02-14 2013-08-22 Qunano Ab Gallium nitride nanowire based electronics
SE537434C2 (sv) 2012-06-26 2015-04-28 Polar Light Technologies Ab Grupp III-nitridstruktur
TWI476953B (zh) 2012-08-10 2015-03-11 Univ Nat Taiwan 半導體發光元件及其製作方法
JP2014060198A (ja) * 2012-09-14 2014-04-03 Oki Electric Ind Co Ltd 窒化物半導体発光ダイオードの製造方法、及び窒化物半導体発光ダイオード
JP6060652B2 (ja) * 2012-11-28 2017-01-18 富士通株式会社 太陽電池及びその製造方法
EP2939276B1 (fr) * 2012-12-28 2019-06-12 Aledia Dispositif opto-électronique à microfils ou nanofils
FR3000612B1 (fr) 2012-12-28 2016-05-06 Commissariat Energie Atomique Dispositif optoelectronique a microfils ou nanofils
WO2014138904A1 (en) * 2013-03-14 2014-09-18 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
DE102013104273A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Anordnung mit säulenartiger Struktur und einer aktiven Zone
WO2014197799A1 (en) 2013-06-07 2014-12-11 Glo-Usa, Inc. Multicolor led and method of fabricating thereof
KR102190675B1 (ko) * 2013-10-10 2020-12-15 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
FR3023410A1 (fr) * 2014-07-02 2016-01-08 Aledia Dispositif optoelectronique a elements semiconducteurs et son procede de fabrication
FR3026564B1 (fr) * 2014-09-30 2018-02-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a elements semiconducteurs tridimensionnels
KR102212557B1 (ko) 2014-11-03 2021-02-08 삼성전자주식회사 나노구조 반도체 발광소자
DE102014116999B4 (de) * 2014-11-20 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
FR3029015B1 (fr) * 2014-11-24 2018-03-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication
DE102016104616B4 (de) * 2016-03-14 2021-09-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle
FR3050322B1 (fr) * 2016-04-18 2019-01-25 Centre National De La Recherche Scientifique (Cnrs) Dispositif photorecepteur multicouche, a parametres de maille differents
JP6873409B2 (ja) * 2016-04-21 2021-05-19 富士通株式会社 発光素子及びその製造方法
FR3053434B1 (fr) * 2016-06-30 2019-06-28 Valeo Vision Module d'emission de lumiere blanche a spectre enrichi
US10879422B2 (en) 2016-09-29 2020-12-29 Nichia Corporation Light emitting element
JP7090861B2 (ja) * 2017-02-28 2022-06-27 学校法人上智学院 光デバイスおよび光デバイスの製造方法
JP7333666B2 (ja) * 2017-02-28 2023-08-25 学校法人上智学院 光デバイスおよび光デバイスの製造方法
JP6972665B2 (ja) 2017-05-31 2021-11-24 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法
JP7147132B2 (ja) * 2017-05-31 2022-10-05 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法
JP6947386B2 (ja) * 2017-06-29 2021-10-13 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
FR3068517B1 (fr) * 2017-06-30 2019-08-09 Aledia Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles en configuration axiale
US10263151B2 (en) * 2017-08-18 2019-04-16 Globalfoundries Inc. Light emitting diodes
CN107482094A (zh) * 2017-09-21 2017-12-15 山西飞虹微纳米光电科技有限公司 基于GaN基轴向纳米棒阵列的LED及其制备方法
JP7053209B2 (ja) * 2017-10-02 2022-04-12 株式会社小糸製作所 半導体成長用基板、半導体素子、半導体発光素子及び半導体成長用基板の製造方法
TW201938491A (zh) * 2018-02-01 2019-10-01 日商日立化成股份有限公司 奈米結晶膜的製造方法
CN109148651B (zh) * 2018-08-06 2019-10-15 复旦大学 基于GaN条纹模板的多色发光InGaN量子阱外延片的制备方法
JP7105442B2 (ja) 2018-08-06 2022-07-25 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7188690B2 (ja) * 2018-08-22 2022-12-13 セイコーエプソン株式会社 プロジェクター
KR102652501B1 (ko) 2018-09-13 2024-03-29 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치
JP7320770B2 (ja) * 2018-09-28 2023-08-04 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7312997B2 (ja) * 2018-11-09 2023-07-24 学校法人 名城大学 半導体発光素子
CN111463659B (zh) * 2019-01-21 2021-08-13 华为技术有限公司 量子点半导体光放大器及其制备方法
US20220102583A1 (en) * 2019-01-29 2022-03-31 Osram Opto Semiconductors Gmbh µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME
EP3696300A1 (de) 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen
JP7207012B2 (ja) 2019-02-27 2023-01-18 セイコーエプソン株式会社 発光装置の製造方法、発光装置、およびプロジェクター
JP7232461B2 (ja) * 2019-02-28 2023-03-03 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7232464B2 (ja) 2019-03-26 2023-03-03 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7232465B2 (ja) 2019-03-26 2023-03-03 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6981444B2 (ja) 2019-04-01 2021-12-15 セイコーエプソン株式会社 発光装置、発光装置の製造方法、およびプロジェクター
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
US20220197041A1 (en) * 2019-05-14 2022-06-23 Osram Opto Semiconductors Gmbh Illumination unit, method for producing an illumination unit, converter element for an optoelectronic component, radiation source inlcuding an led and a converter element, outcoupling structure, and optoelectronic device
FR3098019B1 (fr) 2019-06-25 2022-05-20 Aledia Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication
JP7392426B2 (ja) 2019-11-28 2023-12-06 セイコーエプソン株式会社 発光装置およびプロジェクター
RU2758776C2 (ru) * 2019-12-05 2021-11-01 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ изготовления наноколончатой гетероструктуры на основе соединений iii-n
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
FR3111016B1 (fr) * 2020-06-01 2023-01-13 Aledia Dispositif optoélectronique et procédé de fabrication
US11581450B2 (en) * 2020-06-11 2023-02-14 Globalfoundries U.S. Inc. Photodiode and/or pin diode structures with one or more vertical surfaces
US20230335400A1 (en) * 2020-06-22 2023-10-19 Kyocera Corporation Method for producing semiconductor device, semiconductor device, electronic device, method for producing semiconductor epitaxial substrate, and semiconductor epitaxial substrate
JP7176700B2 (ja) * 2020-07-31 2022-11-22 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7520305B2 (ja) * 2020-08-31 2024-07-23 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法
US11094846B1 (en) 2020-08-31 2021-08-17 4233999 Canada Inc. Monolithic nanocolumn structures
US11322649B2 (en) * 2020-09-15 2022-05-03 Applied Materials, Inc. Three color light sources integrated on a single wafer
JP7556246B2 (ja) * 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
FR3114682B1 (fr) * 2020-09-29 2023-05-19 Aledia Dispositif optoelectronique a diodes electroluminescentes a affichage couleur
JP7203390B2 (ja) 2020-10-13 2023-01-13 セイコーエプソン株式会社 発光装置およびプロジェクター
US11631786B2 (en) 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
JP7560829B2 (ja) * 2020-11-20 2024-10-03 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7635545B2 (ja) * 2020-12-18 2025-02-26 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7613127B2 (ja) 2021-01-22 2025-01-15 セイコーエプソン株式会社 発光装置、プロジェクター
WO2022190353A1 (ja) * 2021-03-12 2022-09-15 シャープ株式会社 量子ドット、量子ドット層、発光素子、及び太陽電池
JP7320794B2 (ja) 2021-03-15 2023-08-04 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP7707605B2 (ja) * 2021-03-29 2025-07-15 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP2022190630A (ja) * 2021-06-14 2022-12-26 豊田合成株式会社 半導体発光素子の製造方法
EP4369425A4 (en) * 2021-07-08 2025-02-12 Koito Manufacturing Co., Ltd. Semiconductor light emitting element and method for producing semiconductor light emitting element
JP7770123B2 (ja) * 2021-07-08 2025-11-14 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法
JP7758492B2 (ja) * 2021-07-08 2025-10-22 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法
JP2023041230A (ja) * 2021-09-13 2023-03-24 セイコーエプソン株式会社 発光装置およびプロジェクター
JP2023065945A (ja) * 2021-10-28 2023-05-15 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7272412B1 (ja) 2021-12-03 2023-05-12 信越半導体株式会社 接合型半導体ウェーハの製造方法
CN114300580B (zh) * 2021-12-30 2024-06-04 长春理工大学 一种探测器材料及其制备方法
JP2024020852A (ja) 2022-08-02 2024-02-15 大日本印刷株式会社 半導体光素子アレイ
US11799054B1 (en) 2023-02-08 2023-10-24 4233999 Canada Inc. Monochromatic emitters on coalesced selective area growth nanocolumns
WO2024164078A1 (en) * 2023-02-08 2024-08-15 4233999 Canada Inc. Light emitters on coalesced selective area growth nanocolumns

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW560119B (en) * 2001-08-22 2003-11-01 Sony Corp Nitride semiconductor element and production method for nitride semiconductor element
US20040183078A1 (en) * 2003-03-21 2004-09-23 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
WO2006025407A1 (ja) * 2004-08-31 2006-03-09 Akihiko Kikuchi 発光素子及びその製造方法
JP2007027298A (ja) * 2005-07-14 2007-02-01 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
US20080014667A1 (en) * 2006-07-13 2008-01-17 Hooper Stewart E Modifying the optical properties of a nitride optoelectronic device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69220824T2 (de) 1991-03-22 1998-01-29 Hitachi Ltd Optische Halbleitervorrichtung
JP4780113B2 (ja) 2000-09-18 2011-09-28 三菱化学株式会社 半導体発光素子
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP4381397B2 (ja) 2000-10-04 2009-12-09 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP3863720B2 (ja) * 2000-10-04 2006-12-27 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP3679720B2 (ja) * 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP3454791B2 (ja) * 2001-03-01 2003-10-06 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP4254157B2 (ja) * 2001-08-22 2009-04-15 ソニー株式会社 窒化物半導体素子及び窒化物半導体素子の製造方法
DE10213643A1 (de) 2002-03-27 2003-10-09 Geka Brush Gmbh Kosmetikeinheit
US7485902B2 (en) * 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
JP2004354617A (ja) * 2003-05-28 2004-12-16 Sharp Corp フォトニック結晶とその製造方法
US7132677B2 (en) 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
JP2006339534A (ja) 2005-06-03 2006-12-14 Sony Corp 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器
MX2008011275A (es) * 2006-03-10 2008-11-25 Stc Unm Crecimiento pulsado de nanoalambres de gan y aplicaciones en materiales y dispositivos de substrato semiconductor de nitruros del grupo iii.
JP2008034482A (ja) * 2006-07-26 2008-02-14 Matsushita Electric Works Ltd 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
JP2008034483A (ja) 2006-07-26 2008-02-14 Matsushita Electric Works Ltd 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
WO2008034823A1 (en) * 2006-09-18 2008-03-27 Qunano Ab Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
JP2008108757A (ja) * 2006-10-23 2008-05-08 Matsushita Electric Works Ltd 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
JP2008108924A (ja) 2006-10-26 2008-05-08 Matsushita Electric Works Ltd 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法
US8030108B1 (en) * 2008-06-30 2011-10-04 Stc.Unm Epitaxial growth of in-plane nanowires and nanowire devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW560119B (en) * 2001-08-22 2003-11-01 Sony Corp Nitride semiconductor element and production method for nitride semiconductor element
US20040183078A1 (en) * 2003-03-21 2004-09-23 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
WO2006025407A1 (ja) * 2004-08-31 2006-03-09 Akihiko Kikuchi 発光素子及びその製造方法
JP2007027298A (ja) * 2005-07-14 2007-02-01 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
US20080014667A1 (en) * 2006-07-13 2008-01-17 Hooper Stewart E Modifying the optical properties of a nitride optoelectronic device

Also Published As

Publication number Publication date
JP2013239718A (ja) 2013-11-28
KR101567121B1 (ko) 2015-11-06
EP2333847B1 (en) 2018-02-14
US9224595B2 (en) 2015-12-29
JP5687731B2 (ja) 2015-03-18
CN102187479A (zh) 2011-09-14
KR20110063799A (ko) 2011-06-14
JP5547076B2 (ja) 2014-07-09
TW201027800A (en) 2010-07-16
WO2010023921A1 (ja) 2010-03-04
EP2333847A4 (en) 2015-02-25
JPWO2010023921A1 (ja) 2012-01-26
US20110169025A1 (en) 2011-07-14
EP2333847A1 (en) 2011-06-15
CN102187479B (zh) 2014-06-18

Similar Documents

Publication Publication Date Title
TWI470828B (zh) 半導體光元件陣列及其製造方法
US9871164B2 (en) Nanostructure light emitting device and method of manufacturing the same
Li et al. GaN based nanorods for solid state lighting
KR101227724B1 (ko) 발광소자 및 그 제조방법
US8592800B2 (en) Optical devices featuring nonpolar textured semiconductor layers
CN103426373A (zh) 发光二极管显示器与其制造方法
CN101506937A (zh) 特征为织构的半导体层的光学器件
US20150349199A1 (en) Semiconductor light emitting device and wafer
JP2009078959A (ja) ＺｎＯ系半導体及びＺｎＯ系半導体素子
TWI828945B (zh) 氮化物半導體紫外線發光元件
TWI851832B (zh) 氮化物半導體紫外線發光元件及其製造方法
CN116114073A (zh) 氮化物半导体紫外线发光元件
TW202107734A (zh) 發光二極體及其製造方法
WO2024029553A1 (ja) 半導体光素子アレイ
TWI881114B (zh) 氮化物半導體紫外線發光元件及其製造方法
JP5227870B2 (ja) エピタキシャル基板、半導体素子構造、およびエピタキシャル基板の作製方法
KR102128835B1 (ko) 그래핀 양자점 광증폭 발광소자를 포함하는 자동차 전장 부품
Kishino et al. Molecular beam epitaxial growth of GaN nanocolumns and related nanocolumn emitters
CN117153979A (zh) 氮化物半导体发光元件
Kouno et al. Ti‐mask selective‐area growth of GaN nanorings by RF‐plasma‐assisted molecular‐beam epitaxy
Kishino et al. Nanocolumn Light Emitters from Ultraviolet to Red and InGaN/GaN Nanocolumn Arrays
KR20120127843A (ko) 발광 소자의 활성층 제조 방법 및 광역 발광 스펙트럼을 가지는 발광 소자

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees