JP5481198B2 - サファイア基板の研削方法 - Google Patents
サファイア基板の研削方法 Download PDFInfo
- Publication number
- JP5481198B2 JP5481198B2 JP2009544217A JP2009544217A JP5481198B2 JP 5481198 B2 JP5481198 B2 JP 5481198B2 JP 2009544217 A JP2009544217 A JP 2009544217A JP 2009544217 A JP2009544217 A JP 2009544217A JP 5481198 B2 JP5481198 B2 JP 5481198B2
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- Prior art keywords
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- grinding
- abrasive
- sapphire substrate
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Description
次の例によって、様々な態様によるウエハを処理する方法を示し、特に、改善された寸法品質および方位を有する大面積ウエハを生産するための処理パラメーターを記述する。次の例では、2インチ、3インチおよび4インチの直径を有するc面のサファイアウエハを処理し、本明細書に示された態様にしたがって形作る。
Claims (9)
- 第1の固定砥粒を使用してサファイア基板の第1の面を研削する工程、および
前記サファイア基板の第1の面と対向するサファイア基板の第2の面を研削する工程、ならびに
前記第1の固定砥粒と異なる第2の固定砥粒を使用して前記サファイア基板の前記第1の面を研削する工程を含み、
前記第2の固定砥粒が、前記第1の固定砥粒よりも小さい平均粒径を有し、
前記第2の固定砥粒が自生作用し、
前記サファイア基板の前記第1の面を研削するときの供給速度は3μm/s以下であり、
前記サファイア基板の前記第1の面を研磨するときのチャック速度は、105rpm以下であり、
前記第2の固定砥粒を使用して前記サファイア基板の前記第1の面を研削するときに、冷却液を使用する、サファイア基板を機械加工する方法。 - 前記第1の固定砥粒が自生作用する請求項1に記載の方法。
- 前記第1の固定砥粒を使用した前記サファイア基板の前記第1の面の研削が、ピーク垂直力を前記第1の面に加えることを含み、
前記ピーク垂直力が50N/mm幅以下である請求項2に記載の方法。 - 前記第1の固定砥粒が、ボンド材料マトリックス中に粗砥粒粒子を含む請求項2に記載の方法。
- 前記第2の固定砥粒が、ボンド材料マトリックス中に微細砥粒粒子を含む請求項1に記載の方法。
- 前記微細砥粒粒子が、100ミクロン以下の平均粒径を有する請求項5に記載の方法。
- 前記第2の固定砥粒が、30〜70vol%の範囲内の気孔率を有する請求項5に記載の方法。
- 前記第2の固定砥粒を使用した前記サファイア基板の前記第1の面の研削が、前記第1の面に対してピーク垂直力を加えることを含み、
前記ピーク垂直力が50N/mm以下である請求項1に記載の方法。 - 前記第2の固定砥粒を使用して研削する工程が、5.0ミクロン以上の材料を前記サファイア基板の前記第1の面から取り除くことを含む請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88235106P | 2006-12-28 | 2006-12-28 | |
US60/882,351 | 2006-12-28 | ||
PCT/US2007/088548 WO2008083071A1 (en) | 2006-12-28 | 2007-12-21 | Method of grinding a sapphire substrate |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012139635A Division JP5743962B2 (ja) | 2006-12-28 | 2012-06-21 | サファイア基板の研削方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010514580A JP2010514580A (ja) | 2010-05-06 |
JP5481198B2 true JP5481198B2 (ja) | 2014-04-23 |
Family
ID=39253929
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009544217A Expired - Fee Related JP5481198B2 (ja) | 2006-12-28 | 2007-12-21 | サファイア基板の研削方法 |
JP2012139635A Expired - Fee Related JP5743962B2 (ja) | 2006-12-28 | 2012-06-21 | サファイア基板の研削方法 |
JP2014219182A Ceased JP2015039033A (ja) | 2006-12-28 | 2014-10-28 | サファイア基板 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012139635A Expired - Fee Related JP5743962B2 (ja) | 2006-12-28 | 2012-06-21 | サファイア基板の研削方法 |
JP2014219182A Ceased JP2015039033A (ja) | 2006-12-28 | 2014-10-28 | サファイア基板 |
Country Status (13)
Country | Link |
---|---|
US (1) | US8197303B2 (ja) |
EP (1) | EP2121242B1 (ja) |
JP (3) | JP5481198B2 (ja) |
KR (7) | KR20160137681A (ja) |
CN (2) | CN103382575B (ja) |
AT (1) | ATE545481T1 (ja) |
CA (1) | CA2673523C (ja) |
IN (1) | IN2014MN01903A (ja) |
PL (1) | PL2121242T3 (ja) |
RU (1) | RU2422259C2 (ja) |
TW (1) | TWI360457B (ja) |
UA (1) | UA97126C2 (ja) |
WO (1) | WO2008083071A1 (ja) |
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