IN2014MN01903A - - Google Patents

Info

Publication number
IN2014MN01903A
IN2014MN01903A IN1903MUN2014A IN2014MN01903A IN 2014MN01903 A IN2014MN01903 A IN 2014MN01903A IN 1903MUN2014 A IN1903MUN2014 A IN 1903MUN2014A IN 2014MN01903 A IN2014MN01903 A IN 2014MN01903A
Authority
IN
India
Prior art keywords
fixed abrasive
sapphire substrate
grinding
dressing
machining
Prior art date
Application number
Inventor
Brahmanandam V Tanikella
Palaniappan Chinnakaruppan
Robert A Rizzuto
Isaac K Cherian
Ramanujam Vedantham
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Publication of IN2014MN01903A publication Critical patent/IN2014MN01903A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

A method of machining a sapphire substrate comprises grinding a first surface of a sapphire substrate using a first fixed abrasive and grinding said first surface of the sapphire substrate using a second fixed abrasive, wherein the second fixed abrasive has a smaller average grain size than the first fixed abrasive, and wherein the second, fixed abrasive is self -dressing.
IN1903MUN2014 2006-12-28 2007-12-21 IN2014MN01903A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88235106P 2006-12-28 2006-12-28
PCT/US2007/088548 WO2008083071A1 (en) 2006-12-28 2007-12-21 Method of grinding a sapphire substrate

Publications (1)

Publication Number Publication Date
IN2014MN01903A true IN2014MN01903A (en) 2015-07-10

Family

ID=39253929

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1903MUN2014 IN2014MN01903A (en) 2006-12-28 2007-12-21

Country Status (13)

Country Link
US (1) US8197303B2 (en)
EP (1) EP2121242B1 (en)
JP (3) JP5481198B2 (en)
KR (7) KR101291112B1 (en)
CN (2) CN101600539B (en)
AT (1) ATE545481T1 (en)
CA (1) CA2673523C (en)
IN (1) IN2014MN01903A (en)
PL (1) PL2121242T3 (en)
RU (1) RU2422259C2 (en)
TW (1) TWI360457B (en)
UA (1) UA97126C2 (en)
WO (1) WO2008083071A1 (en)

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Also Published As

Publication number Publication date
JP2010514580A (en) 2010-05-06
CN101600539B (en) 2013-07-31
JP5743962B2 (en) 2015-07-01
JP5481198B2 (en) 2014-04-23
KR101159658B1 (en) 2012-06-25
RU2422259C2 (en) 2011-06-27
US20080166951A1 (en) 2008-07-10
KR20130100205A (en) 2013-09-09
KR20130055680A (en) 2013-05-28
KR20140131598A (en) 2014-11-13
KR20150075119A (en) 2015-07-02
KR20090085692A (en) 2009-08-07
TWI360457B (en) 2012-03-21
JP2015039033A (en) 2015-02-26
CN103382575B (en) 2016-12-07
KR101369828B1 (en) 2014-03-05
WO2008083071A1 (en) 2008-07-10
KR20160137681A (en) 2016-11-30
EP2121242B1 (en) 2012-02-15
KR20120032556A (en) 2012-04-05
PL2121242T3 (en) 2012-07-31
EP2121242A1 (en) 2009-11-25
CN101600539A (en) 2009-12-09
CA2673523A1 (en) 2008-07-10
US8197303B2 (en) 2012-06-12
JP2012178617A (en) 2012-09-13
UA97126C2 (en) 2012-01-10
KR101715024B1 (en) 2017-03-10
RU2009128754A (en) 2011-02-10
CN103382575A (en) 2013-11-06
ATE545481T1 (en) 2012-03-15
KR101291112B1 (en) 2013-08-01
TW200848205A (en) 2008-12-16
CA2673523C (en) 2012-10-09

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