JP5596090B2 - サファイア基板及びその製造方法 - Google Patents
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- DJZFORCXQDPYML-CPEMHGPFSA-N CCCCCCCC(CCCCCCC)(C1(CCCCC1)/C=C\C(C)C[C@H](C)CCC)O Chemical compound CCCCCCCC(CCCCCCC)(C1(CCCCC1)/C=C\C(C)C[C@H](C)CCC)O DJZFORCXQDPYML-CPEMHGPFSA-N 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Description
本発明はまた、以下の内容を包含する。
(1)a面、r面、m面、及びc面配向からなる群から選択される結晶配向を有し且つ約0.037μm/cm 2 以下のnTTVを有する概ね平坦な表面を含むサファイア基板であって、
nTTVが該概ね0平坦な表面の表面積で規格化された総厚みばらつきであり、該基板は約9.0cm以上の直径を有する、
サファイア基板。
(2)該nTTVが約0.035μm/cm 2 以下である、項目(1)に記載のサファイア基板。
(3)該nTTVが約0.032μm/cm 2 以下である、項目(2)に記載のサファイア基板。
(4)該概ね平坦な表面が約10.0Å以下の粗さRaを有する、項目(1)に記載のサファイア基板。
(5)該表面粗さRaが約5.0Å以下である、項目(4)に記載のサファイア基板。
(6)該基板が0.100μm/cm 2 以下のn平坦度を有し、
n平坦度が該概ね平坦な表面の表面積で規格化された該概ね平坦な表面の平坦度である、
項目(1)に記載のサファイア基板。
(7)該n平坦度が0.070μm/cm 2 以下である、項目(6)に記載のサファイア基板。
(8)該基板が0.100μm/cm 2 以下のnボウを有し、
nボウが該概ね平坦な表面の表面積で規格化された該基板のボウである、
項目(1)に記載のサファイア基板。
(9)該nボウが0.070μm/cm 2 以下である、項目(8)に記載のサファイア基板。
(10)該基板が0.190μm/cm 2 以下のnワープを有し、
nワープが該概ね平坦な表面の表面積で規格化された該基板のワープである、
項目(1)に記載のサファイア基板。
(11)該nワープが0.170μm/cm 2 以下である、項目(10)に記載のサファイア基板。
(12)該結晶配向がc面及びr面配向からなる群から選択される、項目(1)に記載のサファイア基板。
(13)該結晶配向が該c面配向である、項目(12)に記載のサファイア基板。
(14)該サファイア基板の該概ね平坦な表面が約2.0°以下の傾斜角で該c面から傾斜された、項目(13)に記載のサファイア基板。
(15)該傾斜角が約1.0°以下である、項目(14)に記載のサファイア基板。
(16)該サファイア基板の該概ね平坦な表面が1×10 8 /cm 2 以下の転位密度を有する、項目(1)に記載のサファイア基板。
(17)該概ね平坦な表面が約70cm 2 以上の表面積を有する、項目(1)に記載のサファイア基板。
(18)該表面積が約90cm 2 以上である、項目(17)に記載のサファイア基板。
(19)該表面積が約100cm 2 以上である、項目(18)に記載のサファイア基板。
(20)該表面積が約115cm 2 以上である、項目(19)に記載のサファイア基板。
(21)該基板が約10.0cm以上の直径を有する、項目(1)に記載のサファイア基板。
(22)a面、r面、m面、及びc面配向からなる群から選択される結晶配向を有し且つ約3.00μm以下のTTVを有する概ね平坦な表面を含むサファイア基板であって、
TTVが該概ね平坦な表面の総厚みばらつきであり、及び該基板が約6.5cm以上の直径且つ約525μm以下の厚みを有する、
サファイア基板。
(23)該TTVが約2.85μm以下である、項目(22)に記載のサファイア基板。
(24)該TTVが約2.75μm以下である、項目(23)に記載のサファイア基板。
(25)該厚みが約500μm以下である、項目(22)に記載のサファイア基板。
(26)該厚みが約490μm以下である、項目(25)に記載のサファイア基板。
(27)該概ね平坦な表面が約5.0Å以下の粗さRaを有する、項目(22)に記載のサファイア基板。
(28)該表面粗さRaが約4.0Å以下である、項目(27)に記載のサファイア基板。
(29)該基板が0.100μm/cm 2 以下のn平坦度を有し、
n平坦度が該概ね平坦な表面の表面積で規格化された該概ね平坦な表面の平坦度である、
項目(22)に記載のサファイア基板。
(30)該n平坦度が0.070μm/cm 2 以下である、項目(29)に記載のサファイア基板。
(31)該基板が0.100μm/cm 2 以下のnボウを有し、
nボウが該概ね平坦な表面の表面積で規格化された該基板のボウである、
項目(22)に記載のサファイア基板。
(32)該nボウが0.070μm/cm 2 以下である、項目(31)に記載のサファイア基板。
(33)該基板が0.190μm/cm 2 以下のnワープを有し、
nワープが該概ね平坦な表面の表面積で規格化された該基板のワープである、
項目(22)に記載のサファイア基板。
(34)該nワープが0.170μm/cm 2 以下である、項目(33)に記載のサファイア基板。
(35)該結晶配向がc面及びr面配向からなる群から選択される、項目(22)に記載のサファイア基板。
(36)該結晶配向がc面配向である、項目(35)に記載のサファイア基板。
(37)該サファイア基板の該概ね平坦な表面が約2.0°以下の傾斜角で該c面から傾斜された、項目(36)に記載のサファイア基板。
(38)該傾斜角が約1.0°以下である、項目(37)に記載のサファイア基板。
(39)該サファイア基板の該概ね平坦な表面が、X線トポグラフィーによる測定で1×10 8 /cm 2 以下の転位密度を有する、項目(22)に記載のサファイア基板。
(40)該概ね平坦な表面が約40cm 2 以上の表面積を有する、項目(22)に記載のサファイア基板。
(41)該表面積が約70cm 2 以上である、項目(40)に記載のサファイア基板。
(42)該表面積が約80cm 2 以上である、項目(41)に記載のサファイア基板。
(43)該表面積が約115cm 2 以上である、項目(42)に記載のサファイア基板。
(44)該基板が約7.5cm以上の直径を有する、項目(22)に記載のサファイア基板。
(45)該基板が約9.5cm以上の直径を有する、項目(44)に記載のサファイア基板。
(46)a面、r面、m面、及びc面からなる群から選択される結晶配向を有し且つ約0.025μm/cm 2 以下のnTTVを有する概ね平坦な表面を含むサファイア基板であって、
nTTVが該概ね平坦な表面の表面積で規格化された総厚みばらつきである、
サファイア基板。
(47)該nTTVが約0.020以下である、項目(46)に記載のサファイア基板。
(48)該nTTVが約0.018以下である、項目(46)に記載のサファイア基板。
(49)該基板が約9.0cm以上の直径を有する、項目(46)に記載のサファイア基板。
Claims (6)
- a面、r面、m面、及びc面配向からなる群から選択される結晶配向を有し且つ0.015μm/cm 2 〜0.037μm/cm2 の範囲のnTTVを有する概ね平坦な表面を含むサファイア基板であって、
nTTVが該概ね平坦な表面の表面積で規格化された総厚みばらつきであり、該基板は7.5cm〜10cmの範囲の直径を有し、
該基板が0.11μm/cm 2 〜0.190μm/cm2 の範囲のnワープを有し、nワープは該概ね平坦な表面の表面積で規格化された該基板のワープであり、
該概ね平坦な表面が5Å〜150Åの範囲の粗さRaを有し、並びに
該基板が 0.030μm/cm 2 〜0.100μm/cm2 の範囲のnボウを有し、nボウが該概ね平坦な表面の表面積で規格化された該基板のボウである、
サファイア基板。 - 該nTTVが0.015μm/cm 2 〜0.035μm/cm2 の範囲である、請求項1に記載のサファイア基板。
- 該概ね平坦な表面が44cm 2 〜81cm 2 の範囲の表面積を有する、請求項1に記載のサファイア基板。
- a面、r面、m面、及びc面配向からなる群から選択される結晶配向を有し且つ0.95μm〜3.00μmの範囲のTTVを有する概ね平坦な表面を含むサファイア基板であって、
TTVが該概ね平坦な表面の総厚みばらつきであり、
該基板が0.11μm/cm 2 〜0.190μm/cm2 の範囲のnワープを有し、nワープは該概ね平坦な表面の表面積で規格化された該基板のワープであり、
概ね平坦な表面が5Å〜150Åの範囲の粗さRaを有し、並びに
該基板が7.5cm〜10cmの範囲の直径且つ470μm〜525μmの範囲の厚みを有する、
サファイア基板。 - 該表面積が44cm 2 〜81cm 2 の範囲である、請求項4に記載のサファイア基板。
- a面、r面、m面、及びc面からなる群から選択される結晶配向を有し且つ0.015μm/cm 2 〜0.025μm/cm2 の範囲のnTTVを有する概ね平坦な表面を含むサファイア基板であって、
nTTVが該概ね平坦な表面の表面積で規格化された総厚みばらつきであり、該基板が7.5cm〜10cmの範囲の直径を有し、並びに
該基板が0.11μm/cm 2 〜0.190μm/cm2 の範囲のnワープを有し、nワープは該概ね平坦な表面の表面積で規格化された該基板のワープである、
サファイア基板。
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KR (1) | KR101203932B1 (ja) |
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CA (1) | CA2673660C (ja) |
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JP2010514581A (ja) | 2010-05-06 |
KR20090088417A (ko) | 2009-08-19 |
RU2009128751A (ru) | 2011-02-10 |
EP2671975B1 (en) | 2015-02-11 |
TWI372796B (en) | 2012-09-21 |
EP2865790A1 (en) | 2015-04-29 |
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TW200848557A (en) | 2008-12-16 |
CN101600820A (zh) | 2009-12-09 |
UA97969C2 (ru) | 2012-04-10 |
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CN101600820B (zh) | 2012-08-15 |
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