JP5408880B2 - ストレインド・チャネル領域を伴った非平面ｍｏｓ構造 - Google Patents

ストレインド・チャネル領域を伴った非平面ｍｏｓ構造 Download PDF

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JP5408880B2
JP5408880B2 JP2007551294A JP2007551294A JP5408880B2 JP 5408880 B2 JP5408880 B2 JP 5408880B2 JP 2007551294 A JP2007551294 A JP 2007551294A JP 2007551294 A JP2007551294 A JP 2007551294A JP 5408880 B2 JP5408880 B2 JP 5408880B2
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silicon
germanium
layer
substrate
strained
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JP2008527742A5 (enExample
JP2008527742A (ja
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ドイル、ブライアン
ダッタ、スマン
ジン、ビーン−イー
チャウ、ロバート
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Intel Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2007551294A 2005-01-18 2006-01-04 ストレインド・チャネル領域を伴った非平面ｍｏｓ構造 Expired - Fee Related JP5408880B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/039,197 US7193279B2 (en) 2005-01-18 2005-01-18 Non-planar MOS structure with a strained channel region
US11/039,197 2005-01-18
PCT/US2006/000378 WO2006078469A1 (en) 2005-01-18 2006-01-04 Non-planar mos structure with a strained channel region

Publications (3)

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JP2008527742A JP2008527742A (ja) 2008-07-24
JP2008527742A5 JP2008527742A5 (enExample) 2011-10-27
JP5408880B2 true JP5408880B2 (ja) 2014-02-05

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Country Link
US (2) US7193279B2 (enExample)
JP (1) JP5408880B2 (enExample)
KR (1) KR100903902B1 (enExample)
CN (1) CN101142688B (enExample)
DE (1) DE112006000229B4 (enExample)
GB (1) GB2437867B (enExample)
TW (1) TWI309091B (enExample)
WO (1) WO2006078469A1 (enExample)

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WO2006078469A1 (en) 2006-07-27
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GB2437867B (en) 2008-07-09
US7531393B2 (en) 2009-05-12
CN101142688B (zh) 2012-05-23
KR20070089743A (ko) 2007-08-31
CN101142688A (zh) 2008-03-12
US7193279B2 (en) 2007-03-20
TW200711157A (en) 2007-03-16
US20060157794A1 (en) 2006-07-20
JP2008527742A (ja) 2008-07-24
TWI309091B (en) 2009-04-21
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