JP5386313B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5386313B2 JP5386313B2 JP2009257642A JP2009257642A JP5386313B2 JP 5386313 B2 JP5386313 B2 JP 5386313B2 JP 2009257642 A JP2009257642 A JP 2009257642A JP 2009257642 A JP2009257642 A JP 2009257642A JP 5386313 B2 JP5386313 B2 JP 5386313B2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
- H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/13363—Birefringent elements, e.g. for optical compensation
- G02F1/133638—Waveplates, i.e. plates with a retardation value of lambda/n
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0847—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory without any storage capacitor, i.e. with use of parasitic capacitances as storage elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0254—Control of polarity reversal in general, other than for liquid crystal displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0291—Details of output amplifiers or buffers arranged for use in a driving circuit
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/08—Details of timing specific for flat panels, other than clock recovery
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/20—Organic diodes
Description
本実施の形態では、トランジスタを具備する半導体装置の一例に関して説明する。
本実施の形態では、上記実施の形態と異なる構成を有する半導体装置の一例に関し図面を参照して説明する。
図6(A)〜(F)はそれぞれ、配線103から出力される信号(Out)、配線101に入力される信号(IN1)、配線102に入力される信号(IN2)、トランジスタ111のゲートに入力される信号(IN3)、トランジスタ112aのゲートに入力される信号(IN4)、トランジスタ112bのゲートに入力される信号(IN5)を示している。図6では、配線102に入力される信号(IN2)の周期がトランジスタ112a、112bのゲートに入力される信号(IN4、IN5)の1/2である場合を示している。もちろん、入力される信号(IN1〜IN5)は一例であり、これらに限定されるものでない。
以下の説明において、図7、図8の(A)〜(F)はそれぞれ、配線103から出力される信号(Out)、配線101に入力される信号(IN1)、配線102に入力される信号(IN2)、トランジスタ111のゲートに入力される信号(IN3)、トランジスタ112aのゲートに入力される信号(IN4)、トランジスタ112bのゲートに入力される信号(IN5)を示している。図7、図8では、配線102に入力される信号(IN2)の周期がトランジスタ112a、112bのゲートに入力される信号(IN4、IN5)より大きい場合(IN2の周期がIN4、IN5の周期の2倍の場合)を示している。もちろん、入力される信号(IN1〜IN5)は一例であり、これらに限定されるものでない。
以下の説明において、図9、図10の(A)〜(F)はそれぞれ、配線103から出力される信号(Out)、配線101に入力される信号(IN1)、配線102に入力される信号(IN2)、トランジスタ111のゲートに入力される信号(IN3)、トランジスタ112aのゲートに入力される信号(IN4)、トランジスタ112bのゲートに入力される信号(IN5)を示している。図9、図10では、配線102に入力される信号(IN2)の周期がトランジスタ112a、112bのゲートに入力される信号(IN4、IN5)の周期と等しい場合を示している。もちろん、入力される信号(IN1〜IN5)は一例であり、これらに限定されるものでない。
本実施の形態では、上記実施の形態と異なる構成を有する半導体装置の一例に関し図面を参照して説明する。
本実施の形態では、上記実施の形態で示した構成の使用形態に関し図面を参照して説明する。
本実施の形態においては、上記実施の形態で示した回路に適用可能なトランジスタの構造について説明する。トランジスタは、トランジスタが有する半導体層に用いる材料によって大きく分類されることができる。半導体層に用いる材料としては、主成分としてシリコンが含まれるシリコン系材料と、主成分としてシリコンを含まない非シリコン系材料に分類できる。シリコン系材料には、アモルファスシリコン(a−Si:H)、マイクロクリスタルシリコン(μc−Si)、ポリシリコン(p−Si)、単結晶シリコン(c−Si)等が挙げられる。非シリコン系材料としては、砒化ガリウム(GaAs)等の化合物半導体、酸化亜鉛(ZnO)、インジウムとガリウムと亜鉛を含む酸化物(InGaZnO)等の酸化物半導体等が挙げられる。
本実施の形態では、上記実施の形態で示した表示装置を適用した様々な電子機器について、図面を参照して説明する。
102 配線
103 配線
104 配線
111 トランジスタ
112 トランジスタ
114 トランジスタ
115 容量素子
121 トランジスタ
122 トランジスタ
125 画素電極
126 対向電極
128 トランジスタ
129 発光素子
161 トランジスタ
162 トランジスタ
163 トランジスタ
201 トランジスタ
202 トランジスタ
203 トランジスタ
204 トランジスタ
205 トランジスタ
206 トランジスタ
207 トランジスタ
208 容量素子
211 配線
213 配線
221 トランジスタ
222 トランジスタ
223 トランジスタ
224 トランジスタ
225 トランジスタ
226 トランジスタ
227 トランジスタ
228 トランジスタ
229 トランジスタ
230 トランジスタ
231 トランジスタ
232 トランジスタ
241 配線
243 配線
251 トランジスタ
252 トランジスタ
253 トランジスタ
254 トランジスタ
255 トランジスタ
263 配線
264 配線
271 トランジスタ
272 トランジスタ
273 トランジスタ
274 トランジスタ
275 トランジスタ
276 トランジスタ
277 トランジスタ
278 トランジスタ
279 トランジスタ
280 トランジスタ
281 配線
283 配線
101a 配線
103a 配線
103b 配線
103c 配線
112a トランジスタ
112b トランジスタ
141a 配線
142a 配線
212a 配線
212b 配線
212c 配線
242a 配線
242b 配線
262a 配線
262b 配線
282a 配線
282b 配線
5141 基板
5142 絶縁膜
5143 導電層
5144 導電層
5145 導電層
5146 半導体層
5147 半導体層
5148 半導体層
5149 絶縁膜
5150 絶縁膜
5151 導電層
5152 導電層
5158 トランジスタ
5159 容量素子
5161 基板
5162 絶縁膜
5163 導電層
5164 導電層
5165 絶縁膜
5166 半導体層
5167 半導体層
5168 半導体層
5169 導電層
5170 導電層
5171 導電層
5178 トランジスタ
5179 容量素子
5181 基板
5182 絶縁膜
5183 導電層
5184 導電層
5185 絶縁膜
5186 半導体層
5187 半導体層
5188 半導体層
5189 導電層
5190 導電層
5191 導電層
5192 絶縁膜
5198 トランジスタ
5199 容量素子
5201 基板
5202 絶縁膜
5203 導電層
5204 導電層
5205 不純物領域
5205 不純物領域
5206 不純物領域
5207 不純物領域
5208 LDD領域
5209 LDD領域
5210 チャネル形成領域
5211 絶縁膜
5211 絶縁膜
5212 導電層
5213 導電層
5214 絶縁膜
5218 トランジスタ
5219 容量素子
8001 筐体
8002 支持台
8003 表示部
8004 スピーカー部
8005 ビデオ入力端子
8102 筐体
8103 表示部
8104 キーボード
8105 外部接続ポート
8106 ポインティングデバイス
8202 表示部
8204 外部接続ポート
8205 リモコン受信部
8206 受像部
8209 操作キー
8301 照明部
8302 傘
8303 可変アーム
8305 スイッチ
8403 表示部
8404 音声入力部
8406 操作キー
8407 外部接続ポート
Claims (3)
- 第1乃至第3のトランジスタを有し、
前記第1乃至第3のトランジスタは、同じ極性であり、
前記第1のトランジスタのソース又はドレインの一方は、第1の配線と電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、第3の配線と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、第2の配線と電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、前記第3の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第1の配線は、第1の信号を伝達する機能を有し、
前記第2の配線は、第2の信号を伝達する機能を有する半導体装置であって、
前記第2のトランジスタがオンであり、且つ前記第2のトランジスタのソースとドレインとが入れ替わるように前記第2の信号の電位が変化する期間を有することを特徴とする半導体装置。 - 第1乃至第4のトランジスタを有し、
前記第1乃至第4のトランジスタは、同じ極性であり、
前記第1のトランジスタのソース又はドレインの一方は、第1の配線と電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、第3の配線と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、第2の配線と電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、前記第3の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第4のトランジスタのソース又はドレインの一方は、前記第2の配線と電気的に接続され、
前記第4のトランジスタのソース又はドレインの他方は、前記第3の配線と電気的に接続され、
前記第1の配線は、第1の信号を伝達する機能を有し、
前記第2の配線は、第2の信号を伝達する機能を有する半導体装置であって、
前記第2のトランジスタがオンであり、且つ前記第2のトランジスタのソースとドレインとが入れ替わるように前記第2の信号の電位が変化する期間と、
前記第4のトランジスタがオンであり、且つ前記第4のトランジスタのソースとドレインとが入れ替わるように前記第2の信号の電位が変化する期間と、を有することを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第1のトランジスタがオンであり、且つ前記第1のトランジスタのソースとドレインとが入れ替わるように前記第1の信号が変化する期間を有することを特徴とする半導体装置。
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