JP5361808B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP5361808B2
JP5361808B2 JP2010142241A JP2010142241A JP5361808B2 JP 5361808 B2 JP5361808 B2 JP 5361808B2 JP 2010142241 A JP2010142241 A JP 2010142241A JP 2010142241 A JP2010142241 A JP 2010142241A JP 5361808 B2 JP5361808 B2 JP 5361808B2
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JP
Japan
Prior art keywords
layer
semiconductor substrate
outer peripheral
central portion
peripheral portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010142241A
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English (en)
Japanese (ja)
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JP2012009522A5 (enExample
JP2012009522A (ja
Inventor
憲司 羽鳥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010142241A priority Critical patent/JP5361808B2/ja
Priority to US13/042,575 priority patent/US8421145B2/en
Priority to CN201110110576.XA priority patent/CN102299172B/zh
Priority to KR1020110055422A priority patent/KR101256377B1/ko
Priority to DE102011077841.1A priority patent/DE102011077841B4/de
Publication of JP2012009522A publication Critical patent/JP2012009522A/ja
Publication of JP2012009522A5 publication Critical patent/JP2012009522A5/ja
Priority to US13/753,674 priority patent/US8829600B2/en
Application granted granted Critical
Publication of JP5361808B2 publication Critical patent/JP5361808B2/ja
Priority to US14/336,774 priority patent/US9257542B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010142241A 2010-06-23 2010-06-23 電力用半導体装置 Expired - Fee Related JP5361808B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010142241A JP5361808B2 (ja) 2010-06-23 2010-06-23 電力用半導体装置
US13/042,575 US8421145B2 (en) 2010-06-23 2011-03-08 Power semiconductor device
CN201110110576.XA CN102299172B (zh) 2010-06-23 2011-04-29 功率用半导体装置
KR1020110055422A KR101256377B1 (ko) 2010-06-23 2011-06-09 전력용 반도체장치
DE102011077841.1A DE102011077841B4 (de) 2010-06-23 2011-06-20 Leistungshalbleitervorrichtungen
US13/753,674 US8829600B2 (en) 2010-06-23 2013-01-30 Power semiconductor device
US14/336,774 US9257542B2 (en) 2010-06-23 2014-07-21 Power semiconductor device with resistance control structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010142241A JP5361808B2 (ja) 2010-06-23 2010-06-23 電力用半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012267757A Division JP5546612B2 (ja) 2012-12-07 2012-12-07 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2012009522A JP2012009522A (ja) 2012-01-12
JP2012009522A5 JP2012009522A5 (enExample) 2012-07-26
JP5361808B2 true JP5361808B2 (ja) 2013-12-04

Family

ID=45115914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010142241A Expired - Fee Related JP5361808B2 (ja) 2010-06-23 2010-06-23 電力用半導体装置

Country Status (5)

Country Link
US (3) US8421145B2 (enExample)
JP (1) JP5361808B2 (enExample)
KR (1) KR101256377B1 (enExample)
CN (1) CN102299172B (enExample)
DE (1) DE102011077841B4 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081410B2 (en) 2018-10-30 2021-08-03 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149798A (ja) * 2012-01-19 2013-08-01 Fuji Electric Co Ltd 炭化珪素半導体装置
WO2013111294A1 (ja) * 2012-01-26 2013-08-01 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
JPWO2013111294A1 (ja) * 2012-01-26 2015-05-11 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
WO2013161568A1 (ja) * 2012-04-23 2013-10-31 三菱電機株式会社 半導体装置及びその製造方法
CN103579296B (zh) * 2012-08-06 2016-09-07 三垦电气株式会社 半导体装置及其制造方法
CN103633129B (zh) * 2012-08-27 2017-07-21 比亚迪股份有限公司 一种实现局域寿命控制的igbt及其制造方法
KR101452091B1 (ko) 2013-02-26 2014-10-16 삼성전기주식회사 전력 반도체 소자 및 그 제조 방법
US20150001578A1 (en) * 2013-06-27 2015-01-01 Fairchild Korea Semiconductor Ltd. Power semiconductor device and method of manufacturing the same
CN104347405B (zh) * 2013-08-09 2017-11-14 无锡华润上华科技有限公司 一种绝缘栅双极晶体管的制造方法
JP6284336B2 (ja) 2013-10-17 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
TWI559531B (zh) * 2014-08-20 2016-11-21 新唐科技股份有限公司 絕緣閘極雙極性電晶體及其製造方法
JP6402773B2 (ja) * 2014-09-08 2018-10-10 富士電機株式会社 半導体装置及びその製造方法
DE112015000206T5 (de) * 2014-10-03 2016-08-25 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
JP6606819B2 (ja) * 2014-11-10 2019-11-20 富士電機株式会社 半導体装置
US9768284B2 (en) 2015-03-05 2017-09-19 Infineon Technologies Americas Corp. Bipolar semiconductor device having a charge-balanced inter-trench structure
DE112015007172B4 (de) * 2015-12-07 2022-10-27 Mitsubishi Electric Corporation Siliciumcarbid-halbleitereinheit
JP2017168561A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置及びその製造方法
CN109075211B (zh) * 2016-04-25 2023-04-18 三菱电机株式会社 半导体装置
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6825298B2 (ja) * 2016-10-19 2021-02-03 トヨタ自動車株式会社 半導体装置
CN108321196B (zh) * 2018-02-05 2020-05-01 电子科技大学 一种沟槽栅电荷存储型igbt及其制作方法

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JPH023980A (ja) * 1988-06-22 1990-01-09 Nissan Motor Co Ltd 縦型電界効果トランジスタ
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
JP3321185B2 (ja) 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP3148781B2 (ja) 1992-10-06 2001-03-26 松下電子工業株式会社 半導体装置
US5461252A (en) 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
US5835985A (en) * 1993-09-14 1998-11-10 Kabushiki Kaisha Toshiba Reverse conducting gate-turnoff thyristor
JP3850054B2 (ja) * 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
US6710405B2 (en) * 2001-01-17 2004-03-23 Ixys Corporation Non-uniform power semiconductor device
JP4622214B2 (ja) 2003-07-30 2011-02-02 トヨタ自動車株式会社 電流センシング機能を有する半導体装置
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JP4857520B2 (ja) * 2004-01-07 2012-01-18 トヨタ自動車株式会社 バイポーラ半導体装置及びその製造方法
JP4575713B2 (ja) 2004-05-31 2010-11-04 三菱電機株式会社 絶縁ゲート型半導体装置
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JP2008117881A (ja) * 2006-11-02 2008-05-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法
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JP5561922B2 (ja) * 2008-05-20 2014-07-30 三菱電機株式会社 パワー半導体装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081410B2 (en) 2018-10-30 2021-08-03 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN102299172A (zh) 2011-12-28
US8421145B2 (en) 2013-04-16
US8829600B2 (en) 2014-09-09
US9257542B2 (en) 2016-02-09
DE102011077841A1 (de) 2011-12-29
CN102299172B (zh) 2015-07-15
US20140327040A1 (en) 2014-11-06
DE102011077841B4 (de) 2020-12-24
KR20110139646A (ko) 2011-12-29
KR101256377B1 (ko) 2013-04-25
US20110316071A1 (en) 2011-12-29
JP2012009522A (ja) 2012-01-12
US20130140603A1 (en) 2013-06-06

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