DE102011077841B4 - Leistungshalbleitervorrichtungen - Google Patents

Leistungshalbleitervorrichtungen Download PDF

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Publication number
DE102011077841B4
DE102011077841B4 DE102011077841.1A DE102011077841A DE102011077841B4 DE 102011077841 B4 DE102011077841 B4 DE 102011077841B4 DE 102011077841 A DE102011077841 A DE 102011077841A DE 102011077841 B4 DE102011077841 B4 DE 102011077841B4
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semiconductor substrate
semiconductor
semiconductor layer
central portion
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DE102011077841.1A
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German (de)
English (en)
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DE102011077841A1 (de
Inventor
Kenji Hatori
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Nera Innovations Ltd
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE102011077841.1A 2010-06-23 2011-06-20 Leistungshalbleitervorrichtungen Active DE102011077841B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-142241 2010-06-23
JP2010142241A JP5361808B2 (ja) 2010-06-23 2010-06-23 電力用半導体装置

Publications (2)

Publication Number Publication Date
DE102011077841A1 DE102011077841A1 (de) 2011-12-29
DE102011077841B4 true DE102011077841B4 (de) 2020-12-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011077841.1A Active DE102011077841B4 (de) 2010-06-23 2011-06-20 Leistungshalbleitervorrichtungen

Country Status (5)

Country Link
US (3) US8421145B2 (enExample)
JP (1) JP5361808B2 (enExample)
KR (1) KR101256377B1 (enExample)
CN (1) CN102299172B (enExample)
DE (1) DE102011077841B4 (enExample)

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JP2013149798A (ja) * 2012-01-19 2013-08-01 Fuji Electric Co Ltd 炭化珪素半導体装置
JPWO2013111294A1 (ja) * 2012-01-26 2015-05-11 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
EP2808899A4 (en) * 2012-01-26 2015-12-30 Hitachi Ltd SEMICONDUCTOR COMPONENT AND VOLTAGE CONVERSION DEVICE THEREFOR
JP5866002B2 (ja) * 2012-04-23 2016-02-17 三菱電機株式会社 半導体装置及びその製造方法
CN103579296B (zh) * 2012-08-06 2016-09-07 三垦电气株式会社 半导体装置及其制造方法
CN103633129B (zh) * 2012-08-27 2017-07-21 比亚迪股份有限公司 一种实现局域寿命控制的igbt及其制造方法
KR101452091B1 (ko) 2013-02-26 2014-10-16 삼성전기주식회사 전력 반도체 소자 및 그 제조 방법
US20150001578A1 (en) * 2013-06-27 2015-01-01 Fairchild Korea Semiconductor Ltd. Power semiconductor device and method of manufacturing the same
CN104347405B (zh) * 2013-08-09 2017-11-14 无锡华润上华科技有限公司 一种绝缘栅双极晶体管的制造方法
JP6284336B2 (ja) * 2013-10-17 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
TWI559531B (zh) * 2014-08-20 2016-11-21 新唐科技股份有限公司 絕緣閘極雙極性電晶體及其製造方法
JP6402773B2 (ja) * 2014-09-08 2018-10-10 富士電機株式会社 半導体装置及びその製造方法
CN105814694B (zh) 2014-10-03 2019-03-08 富士电机株式会社 半导体装置以及半导体装置的制造方法
JP6606819B2 (ja) * 2014-11-10 2019-11-20 富士電機株式会社 半導体装置
US9768284B2 (en) 2015-03-05 2017-09-19 Infineon Technologies Americas Corp. Bipolar semiconductor device having a charge-balanced inter-trench structure
WO2017098547A1 (ja) * 2015-12-07 2017-06-15 三菱電機株式会社 炭化珪素半導体装置
JP2017168561A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置及びその製造方法
JP6537711B2 (ja) * 2016-04-25 2019-07-03 三菱電機株式会社 半導体装置
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6825298B2 (ja) * 2016-10-19 2021-02-03 トヨタ自動車株式会社 半導体装置
CN108321196B (zh) * 2018-02-05 2020-05-01 电子科技大学 一种沟槽栅电荷存储型igbt及其制作方法
JP7230434B2 (ja) 2018-10-30 2023-03-01 富士電機株式会社 半導体装置の製造方法

Citations (5)

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EP0485059A2 (en) * 1990-09-28 1992-05-13 Kabushiki Kaisha Toshiba Semiconductor device including a pin-diode having high breakdown voltage
DE10360574A1 (de) * 2003-12-22 2005-07-28 Infineon Technologies Ag Leistungshalbleiterbauelement mit sanftem Abschaltverhalten
DE102005014714A1 (de) * 2004-05-31 2005-12-22 Mitsubishi Denki K.K. Halbleitervorrichtung mit isoliertem Gate
DE102005029263A1 (de) * 2005-06-23 2007-01-11 Infineon Technologies Austria Ag Halbleiterbauelement mit verbesserter dynamischer Belastbarkeit
DE102005053487A1 (de) * 2005-11-09 2007-05-31 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit

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JPH023980A (ja) * 1988-06-22 1990-01-09 Nissan Motor Co Ltd 縦型電界効果トランジスタ
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
US5461252A (en) 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
JP3148781B2 (ja) 1992-10-06 2001-03-26 松下電子工業株式会社 半導体装置
EP0643424A1 (en) * 1993-09-14 1995-03-15 Kabushiki Kaisha Toshiba Reverse conducting gate turn off thyristor
JP3850054B2 (ja) * 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
US6710405B2 (en) * 2001-01-17 2004-03-23 Ixys Corporation Non-uniform power semiconductor device
JP4622214B2 (ja) 2003-07-30 2011-02-02 トヨタ自動車株式会社 電流センシング機能を有する半導体装置
JP4857520B2 (ja) * 2004-01-07 2012-01-18 トヨタ自動車株式会社 バイポーラ半導体装置及びその製造方法
JP2008117881A (ja) * 2006-11-02 2008-05-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5089191B2 (ja) * 2007-02-16 2012-12-05 三菱電機株式会社 半導体装置およびその製造方法
JP2009004668A (ja) * 2007-06-25 2009-01-08 Toshiba Corp 半導体装置
JP5561922B2 (ja) * 2008-05-20 2014-07-30 三菱電機株式会社 パワー半導体装置
JP2010040973A (ja) 2008-08-08 2010-02-18 Sony Corp 半導体装置およびその製造方法
JP2010062262A (ja) * 2008-09-02 2010-03-18 Renesas Technology Corp 半導体装置およびその製造方法
JP5713546B2 (ja) * 2008-09-08 2015-05-07 三菱電機株式会社 半導体装置
JP2010135646A (ja) 2008-12-05 2010-06-17 Toyota Central R&D Labs Inc 半導体装置
US8212292B2 (en) * 2009-11-20 2012-07-03 Freescale Semiconductor, Inc. High gain tunable bipolar transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0485059A2 (en) * 1990-09-28 1992-05-13 Kabushiki Kaisha Toshiba Semiconductor device including a pin-diode having high breakdown voltage
DE10360574A1 (de) * 2003-12-22 2005-07-28 Infineon Technologies Ag Leistungshalbleiterbauelement mit sanftem Abschaltverhalten
DE102005014714A1 (de) * 2004-05-31 2005-12-22 Mitsubishi Denki K.K. Halbleitervorrichtung mit isoliertem Gate
DE102005029263A1 (de) * 2005-06-23 2007-01-11 Infineon Technologies Austria Ag Halbleiterbauelement mit verbesserter dynamischer Belastbarkeit
DE102005053487A1 (de) * 2005-11-09 2007-05-31 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit

Also Published As

Publication number Publication date
US20140327040A1 (en) 2014-11-06
CN102299172A (zh) 2011-12-28
US8829600B2 (en) 2014-09-09
JP5361808B2 (ja) 2013-12-04
US20130140603A1 (en) 2013-06-06
KR101256377B1 (ko) 2013-04-25
KR20110139646A (ko) 2011-12-29
CN102299172B (zh) 2015-07-15
US9257542B2 (en) 2016-02-09
US20110316071A1 (en) 2011-12-29
JP2012009522A (ja) 2012-01-12
DE102011077841A1 (de) 2011-12-29
US8421145B2 (en) 2013-04-16

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