CN102299172B - 功率用半导体装置 - Google Patents
功率用半导体装置 Download PDFInfo
- Publication number
- CN102299172B CN102299172B CN201110110576.XA CN201110110576A CN102299172B CN 102299172 B CN102299172 B CN 102299172B CN 201110110576 A CN201110110576 A CN 201110110576A CN 102299172 B CN102299172 B CN 102299172B
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 273
- 239000000758 substrate Substances 0.000 claims abstract description 248
- 230000002093 peripheral effect Effects 0.000 claims abstract description 127
- 239000002800 charge carrier Substances 0.000 claims description 73
- 239000012535 impurity Substances 0.000 claims description 71
- 239000011248 coating agent Substances 0.000 claims description 63
- 238000000576 coating method Methods 0.000 claims description 63
- 238000000034 method Methods 0.000 description 28
- 238000009826 distribution Methods 0.000 description 27
- 230000000694 effects Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000654 additive Substances 0.000 description 11
- 230000000996 additive effect Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010142241A JP5361808B2 (ja) | 2010-06-23 | 2010-06-23 | 電力用半導体装置 |
JP2010-142241 | 2010-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102299172A CN102299172A (zh) | 2011-12-28 |
CN102299172B true CN102299172B (zh) | 2015-07-15 |
Family
ID=45115914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110110576.XA Expired - Fee Related CN102299172B (zh) | 2010-06-23 | 2011-04-29 | 功率用半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8421145B2 (zh) |
JP (1) | JP5361808B2 (zh) |
KR (1) | KR101256377B1 (zh) |
CN (1) | CN102299172B (zh) |
DE (1) | DE102011077841B4 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013149798A (ja) * | 2012-01-19 | 2013-08-01 | Fuji Electric Co Ltd | 炭化珪素半導体装置 |
JPWO2013111294A1 (ja) * | 2012-01-26 | 2015-05-11 | 株式会社日立製作所 | 半導体装置およびそれを用いた電力変換装置 |
WO2013111294A1 (ja) * | 2012-01-26 | 2013-08-01 | 株式会社日立製作所 | 半導体装置およびそれを用いた電力変換装置 |
JP5866002B2 (ja) * | 2012-04-23 | 2016-02-17 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
CN103579296B (zh) * | 2012-08-06 | 2016-09-07 | 三垦电气株式会社 | 半导体装置及其制造方法 |
CN103633129B (zh) * | 2012-08-27 | 2017-07-21 | 比亚迪股份有限公司 | 一种实现局域寿命控制的igbt及其制造方法 |
KR101452091B1 (ko) * | 2013-02-26 | 2014-10-16 | 삼성전기주식회사 | 전력 반도체 소자 및 그 제조 방법 |
US20150001578A1 (en) * | 2013-06-27 | 2015-01-01 | Fairchild Korea Semiconductor Ltd. | Power semiconductor device and method of manufacturing the same |
CN104347405B (zh) * | 2013-08-09 | 2017-11-14 | 无锡华润上华科技有限公司 | 一种绝缘栅双极晶体管的制造方法 |
JP6284336B2 (ja) * | 2013-10-17 | 2018-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
TWI559531B (zh) * | 2014-08-20 | 2016-11-21 | 新唐科技股份有限公司 | 絕緣閘極雙極性電晶體及其製造方法 |
JP6402773B2 (ja) * | 2014-09-08 | 2018-10-10 | 富士電機株式会社 | 半導体装置及びその製造方法 |
WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6606819B2 (ja) * | 2014-11-10 | 2019-11-20 | 富士電機株式会社 | 半導体装置 |
WO2017098547A1 (ja) * | 2015-12-07 | 2017-06-15 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP2017168561A (ja) * | 2016-03-15 | 2017-09-21 | 富士電機株式会社 | 半導体装置及びその製造方法 |
CN109075211B (zh) * | 2016-04-25 | 2023-04-18 | 三菱电机株式会社 | 半导体装置 |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
JP6825298B2 (ja) * | 2016-10-19 | 2021-02-03 | トヨタ自動車株式会社 | 半導体装置 |
CN108321196B (zh) * | 2018-02-05 | 2020-05-01 | 电子科技大学 | 一种沟槽栅电荷存储型igbt及其制作方法 |
JP7230434B2 (ja) | 2018-10-30 | 2023-03-01 | 富士電機株式会社 | 半導体装置の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495871B2 (en) * | 2000-03-06 | 2002-12-17 | Kabushiki Kaisha Toshiba | Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same |
CN101587893A (zh) * | 2008-05-20 | 2009-11-25 | 三菱电机株式会社 | 功率半导体装置 |
Family Cites Families (22)
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JPH023980A (ja) * | 1988-06-22 | 1990-01-09 | Nissan Motor Co Ltd | 縦型電界効果トランジスタ |
US5182626A (en) * | 1989-09-20 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor and method of manufacturing the same |
JP3321185B2 (ja) | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
US5461252A (en) | 1992-10-06 | 1995-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers |
JP3148781B2 (ja) | 1992-10-06 | 2001-03-26 | 松下電子工業株式会社 | 半導体装置 |
EP0643424A1 (en) * | 1993-09-14 | 1995-03-15 | Kabushiki Kaisha Toshiba | Reverse conducting gate turn off thyristor |
JP3850054B2 (ja) * | 1995-07-19 | 2006-11-29 | 三菱電機株式会社 | 半導体装置 |
US6710405B2 (en) * | 2001-01-17 | 2004-03-23 | Ixys Corporation | Non-uniform power semiconductor device |
JP4622214B2 (ja) | 2003-07-30 | 2011-02-02 | トヨタ自動車株式会社 | 電流センシング機能を有する半導体装置 |
DE10360574B4 (de) | 2003-12-22 | 2008-11-27 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit sanftem Abschaltverhalten |
JP4857520B2 (ja) * | 2004-01-07 | 2012-01-18 | トヨタ自動車株式会社 | バイポーラ半導体装置及びその製造方法 |
JP4575713B2 (ja) | 2004-05-31 | 2010-11-04 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
DE102005029263B4 (de) | 2005-06-23 | 2011-07-07 | Infineon Technologies Austria Ag | Halbleiterbauelement mit verbesserter dynamischer Belastbarkeit |
DE102005053487B4 (de) | 2005-11-09 | 2011-06-09 | Infineon Technologies Ag | Leistungs-IGBT mit erhöhter Robustheit |
JP2008117881A (ja) * | 2006-11-02 | 2008-05-22 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP5089191B2 (ja) * | 2007-02-16 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2009004668A (ja) * | 2007-06-25 | 2009-01-08 | Toshiba Corp | 半導体装置 |
JP2010040973A (ja) | 2008-08-08 | 2010-02-18 | Sony Corp | 半導体装置およびその製造方法 |
JP2010062262A (ja) * | 2008-09-02 | 2010-03-18 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5713546B2 (ja) * | 2008-09-08 | 2015-05-07 | 三菱電機株式会社 | 半導体装置 |
JP2010135646A (ja) | 2008-12-05 | 2010-06-17 | Toyota Central R&D Labs Inc | 半導体装置 |
US8212292B2 (en) * | 2009-11-20 | 2012-07-03 | Freescale Semiconductor, Inc. | High gain tunable bipolar transistor |
-
2010
- 2010-06-23 JP JP2010142241A patent/JP5361808B2/ja not_active Expired - Fee Related
-
2011
- 2011-03-08 US US13/042,575 patent/US8421145B2/en active Active
- 2011-04-29 CN CN201110110576.XA patent/CN102299172B/zh not_active Expired - Fee Related
- 2011-06-09 KR KR1020110055422A patent/KR101256377B1/ko active IP Right Grant
- 2011-06-20 DE DE102011077841.1A patent/DE102011077841B4/de active Active
-
2013
- 2013-01-30 US US13/753,674 patent/US8829600B2/en active Active
-
2014
- 2014-07-21 US US14/336,774 patent/US9257542B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495871B2 (en) * | 2000-03-06 | 2002-12-17 | Kabushiki Kaisha Toshiba | Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same |
CN101587893A (zh) * | 2008-05-20 | 2009-11-25 | 三菱电机株式会社 | 功率半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
US8421145B2 (en) | 2013-04-16 |
DE102011077841B4 (de) | 2020-12-24 |
US8829600B2 (en) | 2014-09-09 |
JP5361808B2 (ja) | 2013-12-04 |
US20130140603A1 (en) | 2013-06-06 |
JP2012009522A (ja) | 2012-01-12 |
KR101256377B1 (ko) | 2013-04-25 |
CN102299172A (zh) | 2011-12-28 |
US9257542B2 (en) | 2016-02-09 |
US20140327040A1 (en) | 2014-11-06 |
KR20110139646A (ko) | 2011-12-29 |
DE102011077841A1 (de) | 2011-12-29 |
US20110316071A1 (en) | 2011-12-29 |
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Effective date of registration: 20200630 Address after: Ai Erlandubailin Patentee after: Argona Technology Co.,Ltd. Address before: Tokyo, Japan Patentee before: Mitsubishi Electric Corp. |
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Effective date of registration: 20200903 Address after: Suite 23, Hyde building, carikming Park, Dublin, Ireland Patentee after: Sunley storage Co.,Ltd. Address before: Ai Erlandubailin Patentee before: Argona Technology Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150715 |