CN102299172B - 功率用半导体装置 - Google Patents

功率用半导体装置 Download PDF

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Publication number
CN102299172B
CN102299172B CN201110110576.XA CN201110110576A CN102299172B CN 102299172 B CN102299172 B CN 102299172B CN 201110110576 A CN201110110576 A CN 201110110576A CN 102299172 B CN102299172 B CN 102299172B
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CN
China
Prior art keywords
layer
semiconductor substrate
semiconductor
central portion
thickness direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110110576.XA
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English (en)
Chinese (zh)
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CN102299172A (zh
Inventor
羽鸟宪司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunley Storage Co ltd
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN102299172A publication Critical patent/CN102299172A/zh
Application granted granted Critical
Publication of CN102299172B publication Critical patent/CN102299172B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201110110576.XA 2010-06-23 2011-04-29 功率用半导体装置 Expired - Fee Related CN102299172B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010142241A JP5361808B2 (ja) 2010-06-23 2010-06-23 電力用半導体装置
JP2010-142241 2010-06-23

Publications (2)

Publication Number Publication Date
CN102299172A CN102299172A (zh) 2011-12-28
CN102299172B true CN102299172B (zh) 2015-07-15

Family

ID=45115914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110110576.XA Expired - Fee Related CN102299172B (zh) 2010-06-23 2011-04-29 功率用半导体装置

Country Status (5)

Country Link
US (3) US8421145B2 (enExample)
JP (1) JP5361808B2 (enExample)
KR (1) KR101256377B1 (enExample)
CN (1) CN102299172B (enExample)
DE (1) DE102011077841B4 (enExample)

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JP2013149798A (ja) * 2012-01-19 2013-08-01 Fuji Electric Co Ltd 炭化珪素半導体装置
WO2013111294A1 (ja) * 2012-01-26 2013-08-01 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
JPWO2013111294A1 (ja) * 2012-01-26 2015-05-11 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
WO2013161568A1 (ja) * 2012-04-23 2013-10-31 三菱電機株式会社 半導体装置及びその製造方法
CN103579296B (zh) * 2012-08-06 2016-09-07 三垦电气株式会社 半导体装置及其制造方法
CN103633129B (zh) * 2012-08-27 2017-07-21 比亚迪股份有限公司 一种实现局域寿命控制的igbt及其制造方法
KR101452091B1 (ko) 2013-02-26 2014-10-16 삼성전기주식회사 전력 반도체 소자 및 그 제조 방법
US20150001578A1 (en) * 2013-06-27 2015-01-01 Fairchild Korea Semiconductor Ltd. Power semiconductor device and method of manufacturing the same
CN104347405B (zh) * 2013-08-09 2017-11-14 无锡华润上华科技有限公司 一种绝缘栅双极晶体管的制造方法
JP6284336B2 (ja) 2013-10-17 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
TWI559531B (zh) * 2014-08-20 2016-11-21 新唐科技股份有限公司 絕緣閘極雙極性電晶體及其製造方法
JP6402773B2 (ja) * 2014-09-08 2018-10-10 富士電機株式会社 半導体装置及びその製造方法
DE112015000206T5 (de) * 2014-10-03 2016-08-25 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
JP6606819B2 (ja) * 2014-11-10 2019-11-20 富士電機株式会社 半導体装置
US9768284B2 (en) 2015-03-05 2017-09-19 Infineon Technologies Americas Corp. Bipolar semiconductor device having a charge-balanced inter-trench structure
DE112015007172B4 (de) * 2015-12-07 2022-10-27 Mitsubishi Electric Corporation Siliciumcarbid-halbleitereinheit
JP2017168561A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置及びその製造方法
CN109075211B (zh) * 2016-04-25 2023-04-18 三菱电机株式会社 半导体装置
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6825298B2 (ja) * 2016-10-19 2021-02-03 トヨタ自動車株式会社 半導体装置
CN108321196B (zh) * 2018-02-05 2020-05-01 电子科技大学 一种沟槽栅电荷存储型igbt及其制作方法
JP7230434B2 (ja) 2018-10-30 2023-03-01 富士電機株式会社 半導体装置の製造方法

Citations (2)

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US6495871B2 (en) * 2000-03-06 2002-12-17 Kabushiki Kaisha Toshiba Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
CN101587893A (zh) * 2008-05-20 2009-11-25 三菱电机株式会社 功率半导体装置

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US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
JP3321185B2 (ja) 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP3148781B2 (ja) 1992-10-06 2001-03-26 松下電子工業株式会社 半導体装置
US5461252A (en) 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
US5835985A (en) * 1993-09-14 1998-11-10 Kabushiki Kaisha Toshiba Reverse conducting gate-turnoff thyristor
JP3850054B2 (ja) * 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
US6710405B2 (en) * 2001-01-17 2004-03-23 Ixys Corporation Non-uniform power semiconductor device
JP4622214B2 (ja) 2003-07-30 2011-02-02 トヨタ自動車株式会社 電流センシング機能を有する半導体装置
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JP4857520B2 (ja) * 2004-01-07 2012-01-18 トヨタ自動車株式会社 バイポーラ半導体装置及びその製造方法
JP4575713B2 (ja) 2004-05-31 2010-11-04 三菱電機株式会社 絶縁ゲート型半導体装置
DE102005029263B4 (de) 2005-06-23 2011-07-07 Infineon Technologies Austria Ag Halbleiterbauelement mit verbesserter dynamischer Belastbarkeit
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JP2008117881A (ja) * 2006-11-02 2008-05-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法
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JP2010062262A (ja) * 2008-09-02 2010-03-18 Renesas Technology Corp 半導体装置およびその製造方法
JP5713546B2 (ja) * 2008-09-08 2015-05-07 三菱電機株式会社 半導体装置
JP2010135646A (ja) 2008-12-05 2010-06-17 Toyota Central R&D Labs Inc 半導体装置
US8212292B2 (en) * 2009-11-20 2012-07-03 Freescale Semiconductor, Inc. High gain tunable bipolar transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6495871B2 (en) * 2000-03-06 2002-12-17 Kabushiki Kaisha Toshiba Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
CN101587893A (zh) * 2008-05-20 2009-11-25 三菱电机株式会社 功率半导体装置

Also Published As

Publication number Publication date
CN102299172A (zh) 2011-12-28
US8421145B2 (en) 2013-04-16
US8829600B2 (en) 2014-09-09
US9257542B2 (en) 2016-02-09
DE102011077841A1 (de) 2011-12-29
US20140327040A1 (en) 2014-11-06
DE102011077841B4 (de) 2020-12-24
KR20110139646A (ko) 2011-12-29
KR101256377B1 (ko) 2013-04-25
US20110316071A1 (en) 2011-12-29
JP2012009522A (ja) 2012-01-12
US20130140603A1 (en) 2013-06-06
JP5361808B2 (ja) 2013-12-04

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200630

Address after: Ai Erlandubailin

Patentee after: Argona Technology Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Mitsubishi Electric Corp.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200903

Address after: Suite 23, Hyde building, carikming Park, Dublin, Ireland

Patentee after: Sunley storage Co.,Ltd.

Address before: Ai Erlandubailin

Patentee before: Argona Technology Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150715