KR101256377B1 - 전력용 반도체장치 - Google Patents

전력용 반도체장치 Download PDF

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Publication number
KR101256377B1
KR101256377B1 KR1020110055422A KR20110055422A KR101256377B1 KR 101256377 B1 KR101256377 B1 KR 101256377B1 KR 1020110055422 A KR1020110055422 A KR 1020110055422A KR 20110055422 A KR20110055422 A KR 20110055422A KR 101256377 B1 KR101256377 B1 KR 101256377B1
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South Korea
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semiconductor substrate
semiconductor
semiconductor layer
thickness direction
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KR1020110055422A
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English (en)
Korean (ko)
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KR20110139646A (ko
Inventor
켄지 하토리
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020110055422A 2010-06-23 2011-06-09 전력용 반도체장치 Expired - Fee Related KR101256377B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010142241A JP5361808B2 (ja) 2010-06-23 2010-06-23 電力用半導体装置
JPJP-P-2010-142241 2010-06-23

Publications (2)

Publication Number Publication Date
KR20110139646A KR20110139646A (ko) 2011-12-29
KR101256377B1 true KR101256377B1 (ko) 2013-04-25

Family

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Family Applications (1)

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KR1020110055422A Expired - Fee Related KR101256377B1 (ko) 2010-06-23 2011-06-09 전력용 반도체장치

Country Status (5)

Country Link
US (3) US8421145B2 (enExample)
JP (1) JP5361808B2 (enExample)
KR (1) KR101256377B1 (enExample)
CN (1) CN102299172B (enExample)
DE (1) DE102011077841B4 (enExample)

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JP2013149798A (ja) * 2012-01-19 2013-08-01 Fuji Electric Co Ltd 炭化珪素半導体装置
WO2013111294A1 (ja) * 2012-01-26 2013-08-01 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
JPWO2013111294A1 (ja) * 2012-01-26 2015-05-11 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
WO2013161568A1 (ja) * 2012-04-23 2013-10-31 三菱電機株式会社 半導体装置及びその製造方法
CN103579296B (zh) * 2012-08-06 2016-09-07 三垦电气株式会社 半导体装置及其制造方法
CN103633129B (zh) * 2012-08-27 2017-07-21 比亚迪股份有限公司 一种实现局域寿命控制的igbt及其制造方法
KR101452091B1 (ko) 2013-02-26 2014-10-16 삼성전기주식회사 전력 반도체 소자 및 그 제조 방법
US20150001578A1 (en) * 2013-06-27 2015-01-01 Fairchild Korea Semiconductor Ltd. Power semiconductor device and method of manufacturing the same
CN104347405B (zh) * 2013-08-09 2017-11-14 无锡华润上华科技有限公司 一种绝缘栅双极晶体管的制造方法
JP6284336B2 (ja) 2013-10-17 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
TWI559531B (zh) * 2014-08-20 2016-11-21 新唐科技股份有限公司 絕緣閘極雙極性電晶體及其製造方法
JP6402773B2 (ja) * 2014-09-08 2018-10-10 富士電機株式会社 半導体装置及びその製造方法
DE112015000206T5 (de) * 2014-10-03 2016-08-25 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
JP6606819B2 (ja) * 2014-11-10 2019-11-20 富士電機株式会社 半導体装置
US9768284B2 (en) 2015-03-05 2017-09-19 Infineon Technologies Americas Corp. Bipolar semiconductor device having a charge-balanced inter-trench structure
DE112015007172B4 (de) * 2015-12-07 2022-10-27 Mitsubishi Electric Corporation Siliciumcarbid-halbleitereinheit
JP2017168561A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置及びその製造方法
CN109075211B (zh) * 2016-04-25 2023-04-18 三菱电机株式会社 半导体装置
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6825298B2 (ja) * 2016-10-19 2021-02-03 トヨタ自動車株式会社 半導体装置
CN108321196B (zh) * 2018-02-05 2020-05-01 电子科技大学 一种沟槽栅电荷存储型igbt及其制作方法
JP7230434B2 (ja) 2018-10-30 2023-03-01 富士電機株式会社 半導体装置の製造方法

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US6495871B2 (en) * 2000-03-06 2002-12-17 Kabushiki Kaisha Toshiba Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
US20090289277A1 (en) * 2008-05-20 2009-11-26 Mitsubishi Electric Corporation Power semiconductor device
KR20100019345A (ko) * 2008-08-08 2010-02-18 소니 주식회사 반도체 장치 및 그 제조 방법
JP2010062262A (ja) 2008-09-02 2010-03-18 Renesas Technology Corp 半導体装置およびその製造方法

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JPH023980A (ja) * 1988-06-22 1990-01-09 Nissan Motor Co Ltd 縦型電界効果トランジスタ
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JP3321185B2 (ja) 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP3148781B2 (ja) 1992-10-06 2001-03-26 松下電子工業株式会社 半導体装置
US5461252A (en) 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
US5835985A (en) * 1993-09-14 1998-11-10 Kabushiki Kaisha Toshiba Reverse conducting gate-turnoff thyristor
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JP5713546B2 (ja) * 2008-09-08 2015-05-07 三菱電機株式会社 半導体装置
JP2010135646A (ja) 2008-12-05 2010-06-17 Toyota Central R&D Labs Inc 半導体装置
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US6495871B2 (en) * 2000-03-06 2002-12-17 Kabushiki Kaisha Toshiba Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
US20090289277A1 (en) * 2008-05-20 2009-11-26 Mitsubishi Electric Corporation Power semiconductor device
KR20100019345A (ko) * 2008-08-08 2010-02-18 소니 주식회사 반도체 장치 및 그 제조 방법
JP2010062262A (ja) 2008-09-02 2010-03-18 Renesas Technology Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN102299172A (zh) 2011-12-28
US8421145B2 (en) 2013-04-16
US8829600B2 (en) 2014-09-09
US9257542B2 (en) 2016-02-09
DE102011077841A1 (de) 2011-12-29
CN102299172B (zh) 2015-07-15
US20140327040A1 (en) 2014-11-06
DE102011077841B4 (de) 2020-12-24
KR20110139646A (ko) 2011-12-29
US20110316071A1 (en) 2011-12-29
JP2012009522A (ja) 2012-01-12
US20130140603A1 (en) 2013-06-06
JP5361808B2 (ja) 2013-12-04

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