JP5334956B2 - 個別マスクエラーモデルを使用するマスク検証を行うシステムおよび方法 - Google Patents
個別マスクエラーモデルを使用するマスク検証を行うシステムおよび方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
[0001] 本出願は、”System and Methods for Model-Based Mask Verification”という表題の米国仮特許出願第50/719,837号の利益を主張するものである。この関連出願の主題は、参照によりその全体が本明細書に組み込まれる。
は、製造位相シフトマスクパターンと光線がマスクを通過するときに必要な位相シフトを行うマスク基板の中への設計意図トレンチ深さとの間のトレンチ深さエラーである。ラインエッジ粗さは、滑らかな理想的形状からのラインエッジの偏差である。側壁角度エラーは、製造マスクのラインエッジプロファイルと理想的垂直ラインエッジプロファイルとの角度差である。マスク製造プロセスは、プロセス由来の平均マスクエラー、例えば、コーナー丸めおよびパターンバイアスを記述する公称マスクエラーモデルを有する。それぞれの個別物理的マスクの系統的エラーは、公称マスクエラーモデルからずれている。個別マスクの系統的エラーは、本明細書で開示されているように、個別マスクエラーモデルにより記述される。一実施形態では、個別マスクエラーモデルは、経験的に、例えば、パターン環境およびパターン配置と比較して実験により測定されたコーナー丸めおよびバイアスを当てはめることにより作成される。他の実施形態では、個別マスクエラーモデルは、マスク製造プロセスの第一原理物理的プロセスシミュレーションを使用して、例えば、マスク基板の内側の電子トレースをシミュレートし、レジスト電子間相互作用をシミュレートし、レジスト現像時にレジストの化学プロセスをシミュレートすることで作成される。
Claims (14)
- 露光ツールに対する光学モデルを選択し、
第2の露光ツールに対する第2の光学モデルを選択し、
前記光学モデルおよびマスクの個別マスクエラーモデルを使用して前記露光ツールの動作をシミュレートして、第1のシミュレート結果を出力し、
前記第2の光学モデルおよび前記個別マスクエラーモデルを使用して前記第2の露光ツールの動作をシミュレートして、第2のシミュレート結果を出力し、
前記第1のシミュレート結果と設計ターゲットとの比較を実行し、
前記第2のシミュレート結果と前記設計ターゲットとの比較を実行し、
前記比較結果に基づいて前記露光ツールと前記第2の露光ツールの前記実行を比較すること、を含む、
方法。 - 前記個別マスクエラーモデルは、前記マスクの検査から決定された系統的マスクエラーパラメータを含む、
請求項1に記載の方法。 - 前記マスクを使用して製品ウェハを露光するために前記露光ツールまたは前記第2の露光ツールのうちの1つを選択することをさらに含む、
請求項1に記載の方法。 - 前記個別マスクエラーモデルは、
マスクレイアウトデータを使用して製造された前記マスクからマスク検査データを取得し、
前記マスク検査データと前記マスクレイアウトデータとの差を決定し、
前記マスク検査データと前記マスクレイアウトデータとの差に基づいて系統的マスクエラーデータを生成し、
前記系統的マスクエラーデータに基づいて前記個別マスクエラーモデルに対する系統的マスクエラーパラメータを生成すること、により作成される、
請求項1に記載の方法。 - 露光ツールの光学モデルおよびレジストモデルを含む、リソグラフィプロセスのモデルを選択し、
マスクレイアウトデータを使用して製造されたマスクに対する個別マスクエラーモデルを作成し、
前記リソグラフィプロセスの前記モデルおよび前記個別マスクエラーモデルを使用して前記リソグラフィプロセスをシミュレートして、シミュレートパターンを出力し、
前記シミュレートパターンと設計ターゲットとの差を決定し、
前記シミュレートパターンと前記設計ターゲットとの差に基づいて前記露光ツールの設定を修正すること、を含む、
方法。 - 前記個別マスクエラーモデルは、前記マスクの検査から決定された系統的マスクエラーパラメータを含む、
請求項5に記載の方法。 - 前記露光ツールの前記設定は、焦点、露光ドーズ、開口数、シグマ、干渉、レンズ収差、および照明シフトからなる群から選択される、
請求項5に記載の方法。 - 前記シミュレートパターンと前記設計ターゲットとの差は、クリティカルディメンション、線端引き戻し、およびコーナー丸めからなる群から選択される、
請求項5に記載の方法。 - 個別マスクエラーモデルの作成は、
前記マスクからマスク検査データを取得し、
前記マスク検査データと前記マスクレイアウトデータとの差を決定し、
前記マスク検査データと前記マスクレイアウトデータとの差に基づいて系統的マスクエラーデータを生成し、
前記系統的マスクエラーデータに基づいて前記個別マスクエラーモデルに対する系統的マスクエラーパラメータを生成すること、を含む、
請求項5に記載の方法。 - 複数の露光ツールに対して、それぞれ個別露光ツールを表す複数の光学モデルを選択し、
前記複数の光学モデル毎に、前記光学モデルおよびマスクの個別マスクエラーモデルを使用してリソグラフィプロセスをシミュレートして、シミュレート結果を出力し、
前記複数の光学モデルのそれぞれについて前記シミュレート結果を評価して、前記複数の露光ツールのうちのどれが前記マスクで最良の性能を発揮するかを判定すること、
を含む方法。 - 前記個別マスクエラーモデルは、前記マスクの検査から決定された系統的マスクエラーパラメータを含む、
請求項10に記載の方法。 - 前記複数の光学モデルのそれぞれについて前記シミュレート結果を評価することは、前記シミュレート結果と設計ターゲットとを比較することを含む、
請求項10に記載の方法。 - ウェハ生産のため前記最良一致の露光ツールおよび前記マスクを選択することを含む、
請求項10に記載の方法。 - 前記個別マスクエラーモデルは、
マスクレイアウトデータを使用して製造された前記マスクからマスク検査データを取得し、
前記マスク検査データと前記マスクレイアウトデータとの差を決定し、
前記マスク検査データと前記マスクレイアウトデータとの差に基づいて系統的マスクエラーデータを生成し、
前記系統的マスクエラーデータに基づいて前記個別マスクエラーモデルに対する系統的マスクエラーパラメータを生成すること、によって作成される、
請求項10に記載の方法。
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KR (1) | KR100982135B1 (ja) |
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US20070061773A1 (en) | 2007-03-15 |
CN102662309A (zh) | 2012-09-12 |
KR100982135B1 (ko) | 2010-09-14 |
CN102662309B (zh) | 2014-10-01 |
JP4954211B2 (ja) | 2012-06-13 |
EP1941321A2 (en) | 2008-07-09 |
US7587704B2 (en) | 2009-09-08 |
US7617477B2 (en) | 2009-11-10 |
WO2007030704A2 (en) | 2007-03-15 |
JP2009508167A (ja) | 2009-02-26 |
JP2011100149A (ja) | 2011-05-19 |
KR20080064830A (ko) | 2008-07-09 |
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