JP5121901B2 - 発光装置およびその作製方法 - Google Patents

発光装置およびその作製方法 Download PDF

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Publication number
JP5121901B2
JP5121901B2 JP2010196492A JP2010196492A JP5121901B2 JP 5121901 B2 JP5121901 B2 JP 5121901B2 JP 2010196492 A JP2010196492 A JP 2010196492A JP 2010196492 A JP2010196492 A JP 2010196492A JP 5121901 B2 JP5121901 B2 JP 5121901B2
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layer
electrode layer
oxide
light
thin film
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Expired - Fee Related
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JP2010196492A
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Japanese (ja)
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JP2011076080A5 (enExample
JP2011076080A (ja
Inventor
真之 坂倉
欣聡 及川
舜平 山崎
淳一郎 坂田
将志 津吹
健吾 秋元
みゆき 細羽
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2011076080A5 publication Critical patent/JP2011076080A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010196492A 2009-09-04 2010-09-02 発光装置およびその作製方法 Expired - Fee Related JP5121901B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010196492A JP5121901B2 (ja) 2009-09-04 2010-09-02 発光装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009205075 2009-09-04
JP2009205075 2009-09-04
JP2010196492A JP5121901B2 (ja) 2009-09-04 2010-09-02 発光装置およびその作製方法

Related Child Applications (1)

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JP2012232672A Division JP5584747B2 (ja) 2009-09-04 2012-10-22 発光装置

Publications (3)

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JP2011076080A JP2011076080A (ja) 2011-04-14
JP2011076080A5 JP2011076080A5 (enExample) 2012-09-13
JP5121901B2 true JP5121901B2 (ja) 2013-01-16

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Family Applications (4)

Application Number Title Priority Date Filing Date
JP2010196492A Expired - Fee Related JP5121901B2 (ja) 2009-09-04 2010-09-02 発光装置およびその作製方法
JP2012232672A Expired - Fee Related JP5584747B2 (ja) 2009-09-04 2012-10-22 発光装置
JP2014147611A Withdrawn JP2015004978A (ja) 2009-09-04 2014-07-18 半導体装置
JP2015138580A Expired - Fee Related JP6028072B2 (ja) 2009-09-04 2015-07-10 半導体装置

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JP2012232672A Expired - Fee Related JP5584747B2 (ja) 2009-09-04 2012-10-22 発光装置
JP2014147611A Withdrawn JP2015004978A (ja) 2009-09-04 2014-07-18 半導体装置
JP2015138580A Expired - Fee Related JP6028072B2 (ja) 2009-09-04 2015-07-10 半導体装置

Country Status (4)

Country Link
US (1) US8890166B2 (enExample)
JP (4) JP5121901B2 (enExample)
TW (1) TWI539588B (enExample)
WO (1) WO2011027702A1 (enExample)

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