JP5567770B2 - 表示装置及び表示装置の製造方法 - Google Patents
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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Description
また、本発明に係る表示装置の製造方法は、複数の画素がマトリクス状に配置される基板の上に、画素のスイッチング素子を構成する第1の素子形成部と、光センサ素子を構成する第2の素子形成部と、を有する表示装置の製造方法において、第1の素子形成部を形成する工程は、基板上に第1のゲート電極を形成し、第1のゲート電極上に積層する絶縁膜を挟んで第1のゲート電極に対向するように第1の活性層を形成する工程を有し、第2の素子形成部を形成する工程は、基板上に第2のゲート電極を形成し、外光が入射する側と反対側の第2のゲート電極の表面に、入射光を反射する光反射膜を形成し、第1の活性層と異なる材料により、光反射膜上に積層する絶縁膜を挟んで光反射膜に対向するとともに、層厚が第1の活性層よりも厚い第2の活性層を形成する工程を有し、第2の活性層は、層厚及び材料に応じて、第1の活性層よりも高い光吸収率を備えるように形成する。
ここで記述する「光吸収率」とは、活性層に光が入射したときに、当該活性層に吸収される、単位面積あたりの光の割合(入射光量を100%としたときに活性層に吸収される光量の比率)をいう。例えば、単位面積を1平方μmの大きさで規定すると、1平方μmあたり活性層に入射する光量Q1と当該活性層に吸収される光量Q2の割合(Q2÷Q1)が光吸収率となる。
また、スイッチング素子を構成する第1の活性層と異なる層の厚みや材料で第2の活性層を第1の活性層と同じ下地層の上に形成することにより、スイッチング素子とは別個に光センサ素子の感度特性を制御することが可能となる。
図5は本発明の第1実施形態に係る液晶表示装置1の駆動基板2の主要部を示す断面図である。図示のように、駆動基板2のベースとなるガラス基板5上には、画素11のスイッチング素子(薄膜トランジスタTr)を構成する第1の素子形成部21と、センサ部100の光センサ素子101を構成する第2の素子形成部22が設けられている。上記図1に示す液晶層4側からガラス基板5を平面視すると、第1の素子形成部21は上記画素11とともに表示領域E1に配置され、第2の素子形成部22は、上記センサ部100とともに表示領域E1に配置されている。ただし、これに限らず、第1の素子形成部21は、表示領域E1と周辺領域E2の両方に配置してもよい。また、第2の素子形成部22は、周辺領域E2に配置してもよいし、表示領域E1と周辺領域E2の両方に配置してもよい。図5においては、説明の便宜上、第1の素子形成部21と第2の素子形成部22を隣り合わせに横並びで表示しているが、特に、この並びに限定されるものではない。
図8は本発明の第2実施形態に係る液晶表示装置1の駆動基板2の主要部を示す断面図である。この第2実施形態においては、上記第1実施形態と比較して、特に、第2の素子形成部22のゲート電極33上に光反射膜40を設けた点が異なる。光反射膜40は、外光が入射する側と反対側で光電変換層35に最も近接して対向配置されるゲート電極33の表面に形成されている。また光反射膜40は、少なくともゲート電極33よりも光の反射率が高い材料、例えば銀などの金属材料を用いて形成されている。
図12は本発明の第3実施形態に係る液晶表示装置1の駆動基板2の主要部を示す断面図である。この第3実施形態においては、上記第1実施形態と比較して、特に、透明LCD(Liquid Crystal Display)を実現するために、第1の素子形成部21のゲート電極23を透明電極とした点と、ソース26,36及びドレイン27,37をそれぞれ透明導電膜で形成した点と、ソース電極28,38及びドレイン電極29,39をそれぞれ透明電極とした点と、チャネル層25を透明な半導体膜で形成した点と、ゲート電極33を金属遮蔽電極とした点と、第2の素子形成部22を周辺領域E2だけに配置する点が異なる。
図15は本発明の第4実施形態に係る液晶表示装置1の駆動基板2の主要部を示す断面図である。この第4実施形態においては、上記第1実施形態と比較して、特に、第2の素子形成部22の構成が異なる。すなわち、第2の素子形成部22において、光電変換層35は、第1層35Aとその上に積層された第2層35Bとを含む2層の積層構造になっている。第1層35A及び第2層35Bは、それぞれ同一の元素(本形態例ではシリコン)を用いて形成されている。ここでは一例として、光電変換層35を2層の積層構造としているが、これに限らず、3層以上の積層構造で光電変換層35を形成してもよい。光電変換層35の積層数は、成膜工程の工程数によって規定されるものとする。このため、例えば、2回の成膜工程によって光電変換層35を形成した場合は、光電変換層35の積層数が2層となる。第1の素子形成部21には、チャネル層23とソース/ドレイン26,27を覆う状態でマスク層51が形成され、第2の素子形成部22には、ソース/ドレイン36,37を覆う状態でマスク層51が形成されている。マスク層51は、後述する製造方法で光電変換層35を積層構造とするために形成されるものである。さらに、第2の素子形成部22において、ソース36は、高濃度不純物領域36Hと低濃度不純物領域36Lとを有するLDD構造になっており、ドレイン37は、p+型不純物の拡散領域となっている。
図19は本発明の第5実施形態に係る液晶表示装置1の駆動基板2の主要部を示す断面図である。この第5実施形態においては、上記第4実施形態と比較して、特に、第2の素子形成部22のソース36が、LDD構造ではなく、p+型不純物の拡散領域となっている点が異なる。
図23は本発明の第6実施形態に係る液晶表示装置1の駆動基板2の主要部を示す断面図である。この第6実施形態においては、上記第5実施形態と比較して、特に、第2の素子形成部22のソース/ドレイン36,37が、共にn+型不純物の拡散領域となっている点が異なる。
本発明の第7実施形態においては、上記第4実施形態と比較して、特に、液晶表示装置の製造方法が異なる。
上記構成からなる液晶表示装置1は、図30〜図34に示す様々な電子機器、例えば、デジタルカメラ、ノート型パーソナルコンピュータ、携帯電話等の携帯端末装置、ビデオカメラなど、電子機器に入力された映像信号、若しくは、電子機器内で生成した映像信号を、画像若しくは映像として表示するあらゆる分野の電子機器に適用可能である。
Claims (4)
- 複数の画素がマトリクス状に配置される基板の上に、前記画素のスイッチング素子を構成する第1の素子形成部と光センサ素子を構成する第2の素子形成部とを有する表示装置において、
前記第1の素子形成部は、前記基板上に形成される第1のゲート電極と、前記第1のゲート電極上に積層される絶縁膜を挟んで前記第1のゲート電極に対向するように形成される第1の活性層と、を有し、
前記第2の素子形成部は、前記基板上に形成される第2のゲート電極と、外光が入射する側と反対側の前記第2のゲート電極の表面に形成され、入射光を反射する光反射膜と、
前記第1の活性層と異なる材料で形成され、前記光反射膜上に積層される前記絶縁膜を挟んで前記光反射膜に対向するとともに、層厚が前記第1の活性層よりも厚く形成される第2の活性層と、を有し、
前記第2の活性層は、前記層厚及び前記材料に応じて、前記第1の活性層よりも高い光吸収率を備える、表示装置。 - 前記基板は、前記複数の画素が配置される表示領域と、当該表示領域に隣接する周辺領域とを有し、
前記第1の活性層は、前記表示領域及び前記周辺領域のうち、少なくとも前記表示領域に配置され、
前記第2の活性層は、前記表示領域及び前記周辺領域のうち、少なくとも一方の領域に配置されている、請求項1に記載の表示装置。 - 前記基板は、前記複数の画素が配置される表示領域と、当該表示領域に隣接する周辺領域とを有し、
前記第1の活性層は、透明な半導体膜によって形成されるとともに、前記表示領域に配置され、
前記第2の活性層は、非透明な半導体膜によって形成されるとともに、前記周辺領域に配置されている、請求項1に記載の表示装置。 - 複数の画素がマトリクス状に配置される基板の上に、前記画素のスイッチング素子を構成する第1の素子形成部と、光センサ素子を構成する第2の素子形成部と、を有する表示装置の製造方法において、
前記第1の素子形成部を形成する工程は、
前記基板上に第1のゲート電極を形成し、
前記第1のゲート電極上に積層する絶縁膜を挟んで前記第1のゲート電極に対向するように第1の活性層を形成する工程を有し、
前記第2の素子形成部を形成する工程は、
前記基板上に第2のゲート電極を形成し、
外光が入射する側と反対側の前記第2のゲート電極の表面に、入射光を反射する光反射膜を形成し、
前記第1の活性層と異なる材料により、前記光反射膜上に積層する前記絶縁膜を挟んで前記光反射膜に対向するとともに、層厚が前記第1の活性層よりも厚い第2の活性層を形成する工程を有し、
前記第2の活性層は、前記層厚及び前記材料に応じて、前記第1の活性層よりも高い光吸収率を備えるように形成する、表示装置の製造方法。
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