JP5029539B2 - 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法 - Google Patents

多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法 Download PDF

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Publication number
JP5029539B2
JP5029539B2 JP2008223839A JP2008223839A JP5029539B2 JP 5029539 B2 JP5029539 B2 JP 5029539B2 JP 2008223839 A JP2008223839 A JP 2008223839A JP 2008223839 A JP2008223839 A JP 2008223839A JP 5029539 B2 JP5029539 B2 JP 5029539B2
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Prior art keywords
polycrystalline silicon
pure water
cleaning
washing
acid solution
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JP2008223839A
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Japanese (ja)
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JP2010030872A (ja
Inventor
一弘 堺
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP2008223839A 2007-09-04 2008-09-01 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法 Active JP5029539B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008223839A JP5029539B2 (ja) 2007-09-04 2008-09-01 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007229212 2007-09-04
JP2007229212 2007-09-04
JP2008168496 2008-06-27
JP2008168496 2008-06-27
JP2008223839A JP5029539B2 (ja) 2007-09-04 2008-09-01 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012065243A Division JP2012126643A (ja) 2007-09-04 2012-03-22 多結晶シリコンの洗浄装置

Publications (2)

Publication Number Publication Date
JP2010030872A JP2010030872A (ja) 2010-02-12
JP5029539B2 true JP5029539B2 (ja) 2012-09-19

Family

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Family Applications (2)

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JP2008223839A Active JP5029539B2 (ja) 2007-09-04 2008-09-01 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法
JP2012065243A Pending JP2012126643A (ja) 2007-09-04 2012-03-22 多結晶シリコンの洗浄装置

Family Applications After (1)

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JP2012065243A Pending JP2012126643A (ja) 2007-09-04 2012-03-22 多結晶シリコンの洗浄装置

Country Status (5)

Country Link
US (1) US20090060824A1 (zh)
EP (1) EP2039654A3 (zh)
JP (2) JP5029539B2 (zh)
KR (1) KR101494462B1 (zh)
TW (1) TWI523702B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7905963B2 (en) * 2008-11-28 2011-03-15 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
KR101332922B1 (ko) * 2008-12-26 2013-11-26 미쓰비시 마테리알 가부시키가이샤 다결정 실리콘의 세정 방법 및 세정 장치 그리고 다결정 실리콘의 제조 방법
JP5751748B2 (ja) * 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
KR101170232B1 (ko) 2010-05-20 2012-07-31 현준목 실리콘 회수 방법
CN102764742A (zh) * 2011-05-03 2012-11-07 镇江仁德新能源科技有限公司 碎硅片漂洗设备
CN104329801B (zh) * 2014-10-19 2017-11-10 镇江大成新能源有限公司 边皮料浸泡槽
JP6495147B2 (ja) * 2015-09-17 2019-04-03 信越化学工業株式会社 多結晶シリコン収容治具の検査方法および多結晶シリコンの製造方法
CN110479688B (zh) * 2019-08-05 2022-02-11 马鞍山致青工业设计有限公司 一种硅片生产用酸洗液循环利用的转动式酸洗装置
JP7125960B2 (ja) * 2020-04-30 2022-08-25 信越化学工業株式会社 多結晶シリコンの収容治具および多結晶シリコンの製造方法
CN114749418A (zh) * 2022-04-13 2022-07-15 安徽光智科技有限公司 塑料镀膜镜片的褪膜工艺

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939030A (ja) * 1982-08-27 1984-03-03 Toshiba Corp 純水洗浄装置
JPS61215212A (ja) * 1985-03-22 1986-09-25 Shin Etsu Chem Co Ltd 多結晶シリコンウエハの製造方法
JPS6325209A (ja) * 1986-07-18 1988-02-02 Kawasaki Steel Corp 多結晶シリコンウエハの製造方法
JPH01294513A (ja) * 1988-05-19 1989-11-28 Mitsubishi Electric Corp 半導体多結晶ウエハの製造方法
US4997490A (en) * 1990-08-02 1991-03-05 Bold Plastics, Inc. Method of cleaning and rinsing wafers
JPH06291100A (ja) * 1992-03-06 1994-10-18 Hitachi Ltd 半導体用水洗槽およびそれを使用した水洗終点管理システム
JPH05296959A (ja) * 1992-04-23 1993-11-12 Fuji Electric Co Ltd ウェーハ洗浄槽の純水比抵抗測定装置
JPH0722366A (ja) * 1993-06-29 1995-01-24 Kawasaki Steel Corp シリコンウエハ洗浄装置
JP3600837B2 (ja) * 1994-03-08 2004-12-15 三菱マテリアルポリシリコン株式会社 シリコン片の洗浄方法
JPH08148457A (ja) * 1994-11-15 1996-06-07 Tadahiro Omi ウェットステーション並びにそのウェットステーションを用いたウェット洗浄方法及びウェット洗浄装置
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
JP2000302594A (ja) 1999-02-18 2000-10-31 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの洗浄方法
JP4239343B2 (ja) * 1999-03-26 2009-03-18 ソニー株式会社 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法
FR2801815B1 (fr) * 1999-12-07 2002-02-15 St Microelectronics Sa Dispositif de rincage de plaquettes semiconductrices
JP3398130B2 (ja) * 2000-08-10 2003-04-21 三洋電機株式会社 燃料電池装置
JP3723502B2 (ja) 2001-01-25 2005-12-07 住友チタニウム株式会社 半導体用多結晶シリコンの洗浄方法
JP4734557B2 (ja) * 2003-11-26 2011-07-27 独立行政法人産業技術総合研究所 ３Ｃ−ＳｉＣエピタキシャル薄膜の作製方法及び同方法で作製したＳｉＣエピタキシャル薄膜
JP4692709B2 (ja) * 2004-03-31 2011-06-01 三菱マテリアル株式会社 多結晶シリコンの洗浄方法
JP4553109B2 (ja) * 2004-03-31 2010-09-29 三菱マテリアル株式会社 多結晶シリコンの洗浄脱水装置
US7223303B2 (en) * 2004-08-26 2007-05-29 Mitsubishi Materials Corporation Silicon cleaning method for semiconductor materials and polycrystalline silicon chunk
JP2007173278A (ja) * 2005-12-19 2007-07-05 Seiko Epson Corp 半導体基板洗浄装置及び半導体装置の製造方法
JP4377393B2 (ja) * 2006-05-26 2009-12-02 株式会社大阪チタニウムテクノロジーズ 多結晶シリコンの純水洗浄方法および純水洗浄装置

Also Published As

Publication number Publication date
KR20090024631A (ko) 2009-03-09
TW200932383A (en) 2009-08-01
EP2039654A2 (en) 2009-03-25
EP2039654A3 (en) 2009-05-27
US20090060824A1 (en) 2009-03-05
KR101494462B1 (ko) 2015-02-17
JP2012126643A (ja) 2012-07-05
JP2010030872A (ja) 2010-02-12
TWI523702B (zh) 2016-03-01

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