JP4818519B2 - 磁気記憶装置 - Google Patents

磁気記憶装置 Download PDF

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Publication number
JP4818519B2
JP4818519B2 JP2001029426A JP2001029426A JP4818519B2 JP 4818519 B2 JP4818519 B2 JP 4818519B2 JP 2001029426 A JP2001029426 A JP 2001029426A JP 2001029426 A JP2001029426 A JP 2001029426A JP 4818519 B2 JP4818519 B2 JP 4818519B2
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JP
Japan
Prior art keywords
memory cell
cell array
lines
bit lines
mram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001029426A
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English (en)
Japanese (ja)
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JP2002231904A (ja
JP2002231904A5 (https=
Inventor
辰也 國清
克己 永久
茂伸 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2001029426A priority Critical patent/JP4818519B2/ja
Priority to KR10-2001-0057198A priority patent/KR100448428B1/ko
Priority to US09/989,155 priority patent/US6567299B2/en
Priority to CNB011424982A priority patent/CN1193374C/zh
Priority to CNA2004100642993A priority patent/CN1577618A/zh
Priority to CNA2004100642989A priority patent/CN1577617A/zh
Priority to CNB2004100643002A priority patent/CN100458968C/zh
Priority to TW090132306A priority patent/TW548656B/zh
Priority to DE10164283A priority patent/DE10164283A1/de
Publication of JP2002231904A publication Critical patent/JP2002231904A/ja
Priority to US10/424,086 priority patent/US6741495B2/en
Priority to US10/797,199 priority patent/US6950369B2/en
Publication of JP2002231904A5 publication Critical patent/JP2002231904A5/ja
Application granted granted Critical
Publication of JP4818519B2 publication Critical patent/JP4818519B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Thin Magnetic Films (AREA)
JP2001029426A 2001-02-06 2001-02-06 磁気記憶装置 Expired - Fee Related JP4818519B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2001029426A JP4818519B2 (ja) 2001-02-06 2001-02-06 磁気記憶装置
KR10-2001-0057198A KR100448428B1 (ko) 2001-02-06 2001-09-17 자기 기억 장치 및 자성체 기판
US09/989,155 US6567299B2 (en) 2001-02-06 2001-11-21 Magnetic memory device and magnetic substrate
CNB2004100643002A CN100458968C (zh) 2001-02-06 2001-11-30 磁存储装置
CNA2004100642993A CN1577618A (zh) 2001-02-06 2001-11-30 磁存储装置与磁基片
CNA2004100642989A CN1577617A (zh) 2001-02-06 2001-11-30 磁存储装置与磁基片
CNB011424982A CN1193374C (zh) 2001-02-06 2001-11-30 磁存储装置与磁基片
TW090132306A TW548656B (en) 2001-02-06 2001-12-26 Magnetic memory device
DE10164283A DE10164283A1 (de) 2001-02-06 2001-12-28 Magnetspeichervorrichtung und Magnetsubstrat
US10/424,086 US6741495B2 (en) 2001-02-06 2003-04-28 Magnetic memory device and magnetic substrate
US10/797,199 US6950369B2 (en) 2001-02-06 2004-03-11 Magnetic memory device capable of passing bidirectional currents through the bit lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001029426A JP4818519B2 (ja) 2001-02-06 2001-02-06 磁気記憶装置

Publications (3)

Publication Number Publication Date
JP2002231904A JP2002231904A (ja) 2002-08-16
JP2002231904A5 JP2002231904A5 (https=) 2008-03-13
JP4818519B2 true JP4818519B2 (ja) 2011-11-16

Family

ID=18893780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001029426A Expired - Fee Related JP4818519B2 (ja) 2001-02-06 2001-02-06 磁気記憶装置

Country Status (6)

Country Link
US (3) US6567299B2 (https=)
JP (1) JP4818519B2 (https=)
KR (1) KR100448428B1 (https=)
CN (4) CN100458968C (https=)
DE (1) DE10164283A1 (https=)
TW (1) TW548656B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11744005B2 (en) 2018-10-25 2023-08-29 Murata Manufacturing Co., Ltd. Electronic component module and manufacturing method of electronic component module

Families Citing this family (132)

* Cited by examiner, † Cited by third party
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