CN1525486B - 抑制电源配线的磁场噪声影响的薄膜磁性体存储装置 - Google Patents
抑制电源配线的磁场噪声影响的薄膜磁性体存储装置 Download PDFInfo
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- CN1525486B CN1525486B CN2003101028383A CN200310102838A CN1525486B CN 1525486 B CN1525486 B CN 1525486B CN 2003101028383 A CN2003101028383 A CN 2003101028383A CN 200310102838 A CN200310102838 A CN 200310102838A CN 1525486 B CN1525486 B CN 1525486B
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- 239000010409 thin film Substances 0.000 title claims description 21
- 238000003860 storage Methods 0.000 claims description 176
- 230000004044 response Effects 0.000 claims description 8
- 238000009826 distribution Methods 0.000 description 201
- 230000005415 magnetization Effects 0.000 description 49
- 230000015572 biosynthetic process Effects 0.000 description 24
- 239000010408 film Substances 0.000 description 8
- 230000009471 action Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 230000005055 memory storage Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 101100101335 Mus musculus Usp17la gene Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003050523A JP4315703B2 (ja) | 2003-02-27 | 2003-02-27 | 薄膜磁性体記憶装置 |
JP50523/03 | 2003-02-27 | ||
JP50523/2003 | 2003-02-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1525486A CN1525486A (zh) | 2004-09-01 |
CN1525486B true CN1525486B (zh) | 2010-05-05 |
Family
ID=32905660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2003101028383A Expired - Fee Related CN1525486B (zh) | 2003-02-27 | 2003-10-10 | 抑制电源配线的磁场噪声影响的薄膜磁性体存储装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6912174B2 (zh) |
JP (1) | JP4315703B2 (zh) |
CN (1) | CN1525486B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5733575B2 (ja) * | 2011-09-12 | 2015-06-10 | 国立大学法人東北大学 | 半導体記憶装置 |
TWI608485B (zh) * | 2016-06-07 | 2017-12-11 | 來揚科技股份有限公司 | 電阻式記憶體的讀寫控制裝置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5894447A (en) * | 1996-09-26 | 1999-04-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device including a particular memory cell block structure |
CN1347121A (zh) * | 2000-09-22 | 2002-05-01 | 三菱电机株式会社 | 高速且稳定地进行数据读出工作的薄膜磁性体存储器 |
US6385083B1 (en) * | 2001-08-01 | 2002-05-07 | Hewlett-Packard Company | MRAM device including offset conductors |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4570313B2 (ja) * | 2001-10-25 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP2003346474A (ja) * | 2002-03-19 | 2003-12-05 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP4646485B2 (ja) * | 2002-06-25 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4208500B2 (ja) * | 2002-06-27 | 2009-01-14 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
-
2003
- 2003-02-27 JP JP2003050523A patent/JP4315703B2/ja not_active Expired - Fee Related
- 2003-07-24 US US10/625,644 patent/US6912174B2/en not_active Expired - Fee Related
- 2003-10-10 CN CN2003101028383A patent/CN1525486B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5894447A (en) * | 1996-09-26 | 1999-04-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device including a particular memory cell block structure |
CN1347121A (zh) * | 2000-09-22 | 2002-05-01 | 三菱电机株式会社 | 高速且稳定地进行数据读出工作的薄膜磁性体存储器 |
US6385083B1 (en) * | 2001-08-01 | 2002-05-07 | Hewlett-Packard Company | MRAM device including offset conductors |
Also Published As
Publication number | Publication date |
---|---|
JP2004259389A (ja) | 2004-09-16 |
JP4315703B2 (ja) | 2009-08-19 |
US20040170076A1 (en) | 2004-09-02 |
CN1525486A (zh) | 2004-09-01 |
US6912174B2 (en) | 2005-06-28 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20101019 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO TO, JAPAN TO: KAWASAKI CITY, KANAGAWA PREFECTURE, JAPAN |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101019 Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Renesas Technology Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100505 Termination date: 20131010 |