JP4694144B2 - ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶 - Google Patents

ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶 Download PDF

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JP4694144B2
JP4694144B2 JP2004145179A JP2004145179A JP4694144B2 JP 4694144 B2 JP4694144 B2 JP 4694144B2 JP 2004145179 A JP2004145179 A JP 2004145179A JP 2004145179 A JP2004145179 A JP 2004145179A JP 4694144 B2 JP4694144 B2 JP 4694144B2
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growth
single crystal
sic single
substrate
plane
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JP2004145179A
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Japanese (ja)
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JP2005324994A5 (enExample
JP2005324994A (ja
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恒暢 木本
弘 塩見
広明 斎藤
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Sumitomo Electric Industries Ltd
Toyota Motor Corp
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Sumitomo Electric Industries Ltd
Toyota Motor Corp
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Priority to JP2004145179A priority Critical patent/JP4694144B2/ja
Application filed by Sumitomo Electric Industries Ltd, Toyota Motor Corp filed Critical Sumitomo Electric Industries Ltd
Priority to DE602005004280T priority patent/DE602005004280T2/de
Priority to US11/547,692 priority patent/US20070221119A1/en
Priority to CNA2005800150544A priority patent/CN1950548A/zh
Priority to CN2011102726762A priority patent/CN102337587A/zh
Priority to EP05741354A priority patent/EP1751329B1/en
Priority to PCT/JP2005/009200 priority patent/WO2005111277A1/en
Publication of JP2005324994A publication Critical patent/JP2005324994A/ja
Publication of JP2005324994A5 publication Critical patent/JP2005324994A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP2004145179A 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶 Expired - Fee Related JP4694144B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004145179A JP4694144B2 (ja) 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶
US11/547,692 US20070221119A1 (en) 2004-05-14 2005-05-13 Method of Sic Single Crystal Growth and Sic Single Crystal
CNA2005800150544A CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶
CN2011102726762A CN102337587A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶
DE602005004280T DE602005004280T2 (de) 2004-05-14 2005-05-13 Verfahren zum ziehen von sic-einkristallen und sic-einkristall
EP05741354A EP1751329B1 (en) 2004-05-14 2005-05-13 Method of sic single crystal growth and sic single crystal
PCT/JP2005/009200 WO2005111277A1 (en) 2004-05-14 2005-05-13 Method of growing sic single crystal and sic single crystal grown by same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004145179A JP4694144B2 (ja) 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶

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JP2005324994A JP2005324994A (ja) 2005-11-24
JP2005324994A5 JP2005324994A5 (enExample) 2007-06-28
JP4694144B2 true JP4694144B2 (ja) 2011-06-08

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JP2004145179A Expired - Fee Related JP4694144B2 (ja) 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶

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US (1) US20070221119A1 (enExample)
EP (1) EP1751329B1 (enExample)
JP (1) JP4694144B2 (enExample)
CN (2) CN102337587A (enExample)
DE (1) DE602005004280T2 (enExample)
WO (1) WO2005111277A1 (enExample)

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US7465353B2 (en) * 2004-09-17 2008-12-16 Nippon Mining & Metals Co., Ltd. Method for growing epitaxial crystal
US8980445B2 (en) 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
US8445383B2 (en) * 2007-09-05 2013-05-21 The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
JP4978637B2 (ja) 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
KR20120124352A (ko) * 2010-02-05 2012-11-13 스미토모덴키고교가부시키가이샤 탄화규소 기판의 제조 방법
JP5761533B2 (ja) * 2010-08-27 2015-08-12 国立大学法人 奈良先端科学技術大学院大学 ＳｉＣ半導体素子
JP2012109348A (ja) * 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
WO2012090572A1 (ja) * 2010-12-27 2012-07-05 住友電気工業株式会社 炭化珪素基板、半導体装置、炭化珪素基板の製造方法、および半導体装置の製造方法
JP2014013850A (ja) * 2012-07-05 2014-01-23 Sumitomo Electric Ind Ltd 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6149931B2 (ja) * 2013-07-09 2017-06-21 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP5854013B2 (ja) * 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5884804B2 (ja) * 2013-09-26 2016-03-15 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
WO2015129867A1 (ja) * 2014-02-28 2015-09-03 新日鐵住金株式会社 エピタキシャル炭化珪素ウエハの製造方法
JP6195426B2 (ja) * 2014-04-18 2017-09-13 国立研究開発法人産業技術総合研究所 炭化珪素エピタキシャルウエハおよびその製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6816710B2 (ja) 2015-10-13 2021-01-20 住友電気工業株式会社 半導体積層体
JP7002932B2 (ja) 2017-12-22 2022-01-20 昭和電工株式会社 ＳｉＣインゴットの製造方法
JP2018067736A (ja) * 2018-01-16 2018-04-26 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP7167881B2 (ja) * 2019-08-27 2022-11-09 株式会社デンソー 半導体装置

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US5958132A (en) 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JPH1017399A (ja) 1996-07-04 1998-01-20 Nippon Steel Corp ６Ｈ−ＳｉＣ単結晶の成長方法
EP1215730B9 (en) * 1999-09-07 2007-08-01 Sixon Inc. SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER
JP4253974B2 (ja) 1999-12-22 2009-04-15 住友電気工業株式会社 ＳｉＣ単結晶およびその成長方法
JP3750622B2 (ja) * 2002-03-22 2006-03-01 株式会社デンソー エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
EP1306890A2 (en) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
JP4157326B2 (ja) 2002-05-27 2008-10-01 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶インゴット及びウエハ
WO2003085175A1 (fr) 2002-04-04 2003-10-16 Nippon Steel Corporation Cristal germe de monocristal de carbure de silicium et procede de production de lingot au moyen de celui-ci
JP4160769B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 炭化珪素単結晶インゴット及びウエハ
JP4160770B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶エピタキシャル基板
JP2004099340A (ja) * 2002-09-05 2004-04-02 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP2005029459A (ja) * 2003-06-16 2005-02-03 Showa Denko Kk 炭化珪素単結晶の成長方法、炭化珪素種結晶および炭化珪素単結晶

Also Published As

Publication number Publication date
EP1751329B1 (en) 2008-01-09
US20070221119A1 (en) 2007-09-27
CN102337587A (zh) 2012-02-01
WO2005111277A1 (en) 2005-11-24
DE602005004280T2 (de) 2009-01-29
CN1950548A (zh) 2007-04-18
JP2005324994A (ja) 2005-11-24
EP1751329A1 (en) 2007-02-14
DE602005004280D1 (de) 2008-02-21

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