DE602005004280T2 - Verfahren zum ziehen von sic-einkristallen und sic-einkristall - Google Patents

Verfahren zum ziehen von sic-einkristallen und sic-einkristall Download PDF

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Publication number
DE602005004280T2
DE602005004280T2 DE602005004280T DE602005004280T DE602005004280T2 DE 602005004280 T2 DE602005004280 T2 DE 602005004280T2 DE 602005004280 T DE602005004280 T DE 602005004280T DE 602005004280 T DE602005004280 T DE 602005004280T DE 602005004280 T2 DE602005004280 T2 DE 602005004280T2
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DE
Germany
Prior art keywords
growth
plane
single crystal
sic single
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005004280T
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German (de)
English (en)
Other versions
DE602005004280D1 (de
Inventor
Tsunenobu Kimoto
Hiromu Shiomi
Hiroaki Toyota-shi SAITOH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Toyota Motor Corp
Original Assignee
Sixon Inc
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sixon Inc, Toyota Motor Corp filed Critical Sixon Inc
Publication of DE602005004280D1 publication Critical patent/DE602005004280D1/de
Application granted granted Critical
Publication of DE602005004280T2 publication Critical patent/DE602005004280T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
DE602005004280T 2004-05-14 2005-05-13 Verfahren zum ziehen von sic-einkristallen und sic-einkristall Expired - Lifetime DE602005004280T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004145179A JP4694144B2 (ja) 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶
JP2004145179 2004-05-14
PCT/JP2005/009200 WO2005111277A1 (en) 2004-05-14 2005-05-13 Method of growing sic single crystal and sic single crystal grown by same

Publications (2)

Publication Number Publication Date
DE602005004280D1 DE602005004280D1 (de) 2008-02-21
DE602005004280T2 true DE602005004280T2 (de) 2009-01-29

Family

ID=34968350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005004280T Expired - Lifetime DE602005004280T2 (de) 2004-05-14 2005-05-13 Verfahren zum ziehen von sic-einkristallen und sic-einkristall

Country Status (6)

Country Link
US (1) US20070221119A1 (enExample)
EP (1) EP1751329B1 (enExample)
JP (1) JP4694144B2 (enExample)
CN (2) CN102337587A (enExample)
DE (1) DE602005004280T2 (enExample)
WO (1) WO2005111277A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
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JP4696070B2 (ja) * 2004-09-17 2011-06-08 Ｊｘ日鉱日石金属株式会社 エピタキシャル結晶の成長方法
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
US8445383B2 (en) * 2007-09-05 2013-05-21 The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
JP4978637B2 (ja) 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CA2759074A1 (en) 2010-02-05 2011-08-11 Taro Nishiguchi Method for manufacturing silicon carbide substrate
EP2610912A4 (en) * 2010-08-27 2014-10-22 Nat Univ Corp Nara Inst SIC SEMICONDUCTOR ELEMENT
JP2012109348A (ja) * 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
KR20120101055A (ko) * 2010-12-27 2012-09-12 스미토모덴키고교가부시키가이샤 탄화규소 기판, 반도체 장치, 탄화규소 기판의 제조 방법 및 반도체 장치의 제조 방법
JP2014013850A (ja) * 2012-07-05 2014-01-23 Sumitomo Electric Ind Ltd 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
CN105008598B (zh) * 2013-07-09 2018-01-19 富士电机株式会社 碳化硅半导体装置的制造方法以及碳化硅半导体装置
JP5854013B2 (ja) * 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5884804B2 (ja) * 2013-09-26 2016-03-15 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
KR101885975B1 (ko) * 2014-02-28 2018-08-06 쇼와 덴코 가부시키가이샤 에피택셜 탄화규소 웨이퍼의 제조 방법
CN106233430B (zh) 2014-04-18 2019-08-06 国立研究开发法人产业技术综合研究所 碳化硅外延晶片及其制造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
WO2017064913A1 (ja) 2015-10-13 2017-04-20 住友電気工業株式会社 半導体積層体
JP7002932B2 (ja) 2017-12-22 2022-01-20 昭和電工株式会社 ＳｉＣインゴットの製造方法
JP2018067736A (ja) * 2018-01-16 2018-04-26 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP7167881B2 (ja) * 2019-08-27 2022-11-09 株式会社デンソー 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JPH1017399A (ja) 1996-07-04 1998-01-20 Nippon Steel Corp ６Ｈ−ＳｉＣ単結晶の成長方法
TW565630B (en) * 1999-09-07 2003-12-11 Sixon Inc SiC wafer, SiC semiconductor device and method for manufacturing SiC wafer
JP4253974B2 (ja) * 1999-12-22 2009-04-15 住友電気工業株式会社 ＳｉＣ単結晶およびその成長方法
JP3750622B2 (ja) * 2002-03-22 2006-03-01 株式会社デンソー エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
EP1306890A2 (en) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
JP4157326B2 (ja) 2002-05-27 2008-10-01 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶インゴット及びウエハ
JP4160769B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 炭化珪素単結晶インゴット及びウエハ
KR100773624B1 (ko) 2002-04-04 2007-11-05 신닛뽄세이테쯔 카부시키카이샤 탄화 규소 단결정으로 이루어지는 종결정 및 그를 이용한잉곳의 제조 방법
JP4160770B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶エピタキシャル基板
JP2004099340A (ja) * 2002-09-05 2004-04-02 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP2005029459A (ja) * 2003-06-16 2005-02-03 Showa Denko Kk 炭化珪素単結晶の成長方法、炭化珪素種結晶および炭化珪素単結晶

Also Published As

Publication number Publication date
JP4694144B2 (ja) 2011-06-08
EP1751329B1 (en) 2008-01-09
DE602005004280D1 (de) 2008-02-21
JP2005324994A (ja) 2005-11-24
WO2005111277A1 (en) 2005-11-24
CN102337587A (zh) 2012-02-01
EP1751329A1 (en) 2007-02-14
CN1950548A (zh) 2007-04-18
US20070221119A1 (en) 2007-09-27

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: SAITOH, HIROAKI, TOYOTA-SHI, AICHI, JP

Inventor name: SHIOMI, HIROMU, KYOTO-SHI, JP

Inventor name: KIMOTO, TSUNENOBU, KYOTO-SHI, JP

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, A, JP

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP