CN102337587A - SiC单晶的生长方法和由该方法生长的SiC单晶 - Google Patents

SiC单晶的生长方法和由该方法生长的SiC单晶 Download PDF

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Publication number
CN102337587A
CN102337587A CN2011102726762A CN201110272676A CN102337587A CN 102337587 A CN102337587 A CN 102337587A CN 2011102726762 A CN2011102726762 A CN 2011102726762A CN 201110272676 A CN201110272676 A CN 201110272676A CN 102337587 A CN102337587 A CN 102337587A
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CN
China
Prior art keywords
single crystal
substrate
growth
sic single
sic
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Pending
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CN2011102726762A
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English (en)
Chinese (zh)
Inventor
木本恒畅
盐见弘
齐藤广明
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Sumitomo Electric Industries Ltd
Toyota Motor Corp
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Sumitomo Electric Industries Ltd
Toyota Motor Corp
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Application filed by Sumitomo Electric Industries Ltd, Toyota Motor Corp filed Critical Sumitomo Electric Industries Ltd
Publication of CN102337587A publication Critical patent/CN102337587A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
CN2011102726762A 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶 Pending CN102337587A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004145179A JP4694144B2 (ja) 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶
JP2004-145179 2004-05-14

Related Parent Applications (1)

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CNA2005800150544A Division CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Publications (1)

Publication Number Publication Date
CN102337587A true CN102337587A (zh) 2012-02-01

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CN2011102726762A Pending CN102337587A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶
CNA2005800150544A Pending CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

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CNA2005800150544A Pending CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Country Status (6)

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US (1) US20070221119A1 (enExample)
EP (1) EP1751329B1 (enExample)
JP (1) JP4694144B2 (enExample)
CN (2) CN102337587A (enExample)
DE (1) DE602005004280T2 (enExample)
WO (1) WO2005111277A1 (enExample)

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US7465353B2 (en) * 2004-09-17 2008-12-16 Nippon Mining & Metals Co., Ltd. Method for growing epitaxial crystal
US8980445B2 (en) 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
US8445383B2 (en) * 2007-09-05 2013-05-21 The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
JP4978637B2 (ja) 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
KR20120124352A (ko) * 2010-02-05 2012-11-13 스미토모덴키고교가부시키가이샤 탄화규소 기판의 제조 방법
JP5761533B2 (ja) * 2010-08-27 2015-08-12 国立大学法人 奈良先端科学技術大学院大学 ＳｉＣ半導体素子
JP2012109348A (ja) * 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
WO2012090572A1 (ja) * 2010-12-27 2012-07-05 住友電気工業株式会社 炭化珪素基板、半導体装置、炭化珪素基板の製造方法、および半導体装置の製造方法
JP2014013850A (ja) * 2012-07-05 2014-01-23 Sumitomo Electric Ind Ltd 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6149931B2 (ja) * 2013-07-09 2017-06-21 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP5854013B2 (ja) * 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5884804B2 (ja) * 2013-09-26 2016-03-15 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
WO2015129867A1 (ja) * 2014-02-28 2015-09-03 新日鐵住金株式会社 エピタキシャル炭化珪素ウエハの製造方法
JP6195426B2 (ja) * 2014-04-18 2017-09-13 国立研究開発法人産業技術総合研究所 炭化珪素エピタキシャルウエハおよびその製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6816710B2 (ja) 2015-10-13 2021-01-20 住友電気工業株式会社 半導体積層体
JP7002932B2 (ja) 2017-12-22 2022-01-20 昭和電工株式会社 ＳｉＣインゴットの製造方法
JP2018067736A (ja) * 2018-01-16 2018-04-26 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP7167881B2 (ja) * 2019-08-27 2022-11-09 株式会社デンソー 半導体装置

Citations (1)

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EP1249521A1 (en) * 1999-12-22 2002-10-16 Sixon Inc. SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME

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US5958132A (en) 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JPH1017399A (ja) 1996-07-04 1998-01-20 Nippon Steel Corp ６Ｈ−ＳｉＣ単結晶の成長方法
EP1215730B9 (en) * 1999-09-07 2007-08-01 Sixon Inc. SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER
JP3750622B2 (ja) * 2002-03-22 2006-03-01 株式会社デンソー エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
EP1306890A2 (en) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
JP4157326B2 (ja) 2002-05-27 2008-10-01 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶インゴット及びウエハ
WO2003085175A1 (fr) 2002-04-04 2003-10-16 Nippon Steel Corporation Cristal germe de monocristal de carbure de silicium et procede de production de lingot au moyen de celui-ci
JP4160769B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 炭化珪素単結晶インゴット及びウエハ
JP4160770B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶エピタキシャル基板
JP2004099340A (ja) * 2002-09-05 2004-04-02 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP2005029459A (ja) * 2003-06-16 2005-02-03 Showa Denko Kk 炭化珪素単結晶の成長方法、炭化珪素種結晶および炭化珪素単結晶

Patent Citations (1)

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EP1249521A1 (en) * 1999-12-22 2002-10-16 Sixon Inc. SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME

Also Published As

Publication number Publication date
JP4694144B2 (ja) 2011-06-08
EP1751329B1 (en) 2008-01-09
US20070221119A1 (en) 2007-09-27
WO2005111277A1 (en) 2005-11-24
DE602005004280T2 (de) 2009-01-29
CN1950548A (zh) 2007-04-18
JP2005324994A (ja) 2005-11-24
EP1751329A1 (en) 2007-02-14
DE602005004280D1 (de) 2008-02-21

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Application publication date: 20120201