JP4629421B2 - ドライエッチング方法及びドライエッチング装置 - Google Patents

ドライエッチング方法及びドライエッチング装置 Download PDF

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Publication number
JP4629421B2
JP4629421B2 JP2004352614A JP2004352614A JP4629421B2 JP 4629421 B2 JP4629421 B2 JP 4629421B2 JP 2004352614 A JP2004352614 A JP 2004352614A JP 2004352614 A JP2004352614 A JP 2004352614A JP 4629421 B2 JP4629421 B2 JP 4629421B2
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JP
Japan
Prior art keywords
etching
layer
etched
gas
frequency power
Prior art date
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Expired - Fee Related
Application number
JP2004352614A
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English (en)
Japanese (ja)
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JP2006165164A (ja
JP2006165164A5 (https=
Inventor
充弘 奥根
宏之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2004352614A priority Critical patent/JP4629421B2/ja
Priority to TW094142763A priority patent/TW200629403A/zh
Priority to KR1020077012669A priority patent/KR20070085776A/ko
Priority to US11/792,238 priority patent/US20080093338A1/en
Priority to PCT/JP2005/022351 priority patent/WO2006062085A1/ja
Publication of JP2006165164A publication Critical patent/JP2006165164A/ja
Publication of JP2006165164A5 publication Critical patent/JP2006165164A5/ja
Application granted granted Critical
Publication of JP4629421B2 publication Critical patent/JP4629421B2/ja
Priority to US13/336,446 priority patent/US20120094500A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2004352614A 2004-12-06 2004-12-06 ドライエッチング方法及びドライエッチング装置 Expired - Fee Related JP4629421B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004352614A JP4629421B2 (ja) 2004-12-06 2004-12-06 ドライエッチング方法及びドライエッチング装置
TW094142763A TW200629403A (en) 2004-12-06 2005-12-05 Dry etching method and apparatus
US11/792,238 US20080093338A1 (en) 2004-12-06 2005-12-06 Dry Etching Method And Dry Etching Apparatus
PCT/JP2005/022351 WO2006062085A1 (ja) 2004-12-06 2005-12-06 ドライエッチング方法及びドライエッチング装置
KR1020077012669A KR20070085776A (ko) 2004-12-06 2005-12-06 건식 에칭 방법 및 건식 에칭 장치
US13/336,446 US20120094500A1 (en) 2004-12-06 2011-12-23 Dry etching method and dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004352614A JP4629421B2 (ja) 2004-12-06 2004-12-06 ドライエッチング方法及びドライエッチング装置

Publications (3)

Publication Number Publication Date
JP2006165164A JP2006165164A (ja) 2006-06-22
JP2006165164A5 JP2006165164A5 (https=) 2010-01-14
JP4629421B2 true JP4629421B2 (ja) 2011-02-09

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Family Applications (1)

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JP2004352614A Expired - Fee Related JP4629421B2 (ja) 2004-12-06 2004-12-06 ドライエッチング方法及びドライエッチング装置

Country Status (5)

Country Link
US (2) US20080093338A1 (https=)
JP (1) JP4629421B2 (https=)
KR (1) KR20070085776A (https=)
TW (1) TW200629403A (https=)
WO (1) WO2006062085A1 (https=)

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KR20080060017A (ko) * 2006-12-26 2008-07-01 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP5154260B2 (ja) * 2008-02-26 2013-02-27 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
TWI495009B (zh) * 2010-02-12 2015-08-01 Advanced Micro Fab Equip Inc A Plasma Etching Method with Silicon Insulating Layer
KR20120031811A (ko) 2010-09-27 2012-04-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9318341B2 (en) 2010-12-20 2016-04-19 Applied Materials, Inc. Methods for etching a substrate
JP5943369B2 (ja) * 2011-02-09 2016-07-05 国立研究開発法人産業技術総合研究所 熱伝導積層膜部材及びその製造方法、これを用いた放熱部品及び放熱デバイス
US8691698B2 (en) * 2012-02-08 2014-04-08 Lam Research Corporation Controlled gas mixing for smooth sidewall rapid alternating etch process
US8951915B2 (en) 2012-09-11 2015-02-10 Infineon Technologies Ag Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements
KR102153246B1 (ko) * 2012-10-30 2020-09-07 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스
JP2015032597A (ja) * 2013-07-31 2015-02-16 日本ゼオン株式会社 プラズマエッチング方法
CN103820863A (zh) * 2014-02-25 2014-05-28 四川飞阳科技有限公司 石英衬底上多晶硅的刻蚀方法以及平面光波导的制作方法
KR102333443B1 (ko) 2014-10-24 2021-12-02 삼성전자주식회사 반도체 소자의 제조 방법
CN105752928B (zh) * 2014-12-16 2018-04-13 中芯国际集成电路制造(上海)有限公司 Mems器件的制作方法及mems器件
JP6492288B2 (ja) * 2015-10-01 2019-04-03 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6524419B2 (ja) * 2016-02-04 2019-06-05 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
CN110783187B (zh) * 2018-07-25 2024-04-19 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
WO2021127862A1 (en) * 2019-12-23 2021-07-01 Applied Materials, Inc. Methods for etching a material layer for semiconductor applications
TW202425121A (zh) * 2022-08-25 2024-06-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US20240395557A1 (en) * 2023-05-23 2024-11-28 Tokyo Electron Limited Systems and methods for semiconductor etching

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US4647512A (en) * 1986-03-20 1987-03-03 The Perkin-Elmer Corporation Diamond-like carbon films and process for production thereof
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JP2666768B2 (ja) * 1995-04-27 1997-10-22 日本電気株式会社 ドライエッチング方法及び装置
US6071822A (en) * 1998-06-08 2000-06-06 Plasma-Therm, Inc. Etching process for producing substantially undercut free silicon on insulator structures
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP2001057359A (ja) * 1999-08-17 2001-02-27 Tokyo Electron Ltd プラズマ処理装置
US6391788B1 (en) * 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
JP3920015B2 (ja) * 2000-09-14 2007-05-30 東京エレクトロン株式会社 Ｓｉ基板の加工方法
JP2002176182A (ja) * 2000-12-06 2002-06-21 Denso Corp 容量式力学量センサの製造方法
US20030003748A1 (en) * 2001-05-24 2003-01-02 Anisul Khan Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulator
EP1282159B1 (en) * 2001-07-23 2004-09-29 Infineon Technologies AG Method of forming an isolation layer and method of manufacturing a trench capacitor
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
JP2003273086A (ja) * 2002-03-19 2003-09-26 Matsushita Electric Ind Co Ltd ドライエッチング方法および半導体製造装置
US20030228768A1 (en) * 2002-06-05 2003-12-11 Applied Materials, Inc. Dielectric etching with reduced striation
US6897154B2 (en) * 2002-06-14 2005-05-24 Applied Materials Inc Selective etching of low-k dielectrics
US6939811B2 (en) * 2002-09-25 2005-09-06 Lam Research Corporation Apparatus and method for controlling etch depth
US20040077178A1 (en) * 2002-10-17 2004-04-22 Applied Materials, Inc. Method for laterally etching a semiconductor structure
US6905616B2 (en) * 2003-03-05 2005-06-14 Applied Materials, Inc. Method of releasing devices from a substrate
JP4065213B2 (ja) * 2003-03-25 2008-03-19 住友精密工業株式会社 シリコン基板のエッチング方法及びエッチング装置
JP3972846B2 (ja) * 2003-03-25 2007-09-05 セイコーエプソン株式会社 半導体装置の製造方法
JP4493516B2 (ja) * 2004-02-17 2010-06-30 三洋電機株式会社 半導体装置の製造方法
TWI249767B (en) * 2004-02-17 2006-02-21 Sanyo Electric Co Method for making a semiconductor device
US7232762B2 (en) * 2004-06-16 2007-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an improved low power SRAM contact

Also Published As

Publication number Publication date
WO2006062085A1 (ja) 2006-06-15
TW200629403A (en) 2006-08-16
KR20070085776A (ko) 2007-08-27
JP2006165164A (ja) 2006-06-22
US20120094500A1 (en) 2012-04-19
US20080093338A1 (en) 2008-04-24

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