KR20070085776A - 건식 에칭 방법 및 건식 에칭 장치 - Google Patents

건식 에칭 방법 및 건식 에칭 장치 Download PDF

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Publication number
KR20070085776A
KR20070085776A KR1020077012669A KR20077012669A KR20070085776A KR 20070085776 A KR20070085776 A KR 20070085776A KR 1020077012669 A KR1020077012669 A KR 1020077012669A KR 20077012669 A KR20077012669 A KR 20077012669A KR 20070085776 A KR20070085776 A KR 20070085776A
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KR
South Korea
Prior art keywords
etching
gas
etched layer
layer
etched
Prior art date
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KR1020077012669A
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English (en)
Korean (ko)
Inventor
미츠히로 오쿠네
히로유키 스즈키
Original Assignee
마츠시타 덴끼 산교 가부시키가이샤
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Publication of KR20070085776A publication Critical patent/KR20070085776A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077012669A 2004-12-06 2005-12-06 건식 에칭 방법 및 건식 에칭 장치 Withdrawn KR20070085776A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00352614 2004-12-06
JP2004352614A JP4629421B2 (ja) 2004-12-06 2004-12-06 ドライエッチング方法及びドライエッチング装置

Publications (1)

Publication Number Publication Date
KR20070085776A true KR20070085776A (ko) 2007-08-27

Family

ID=36577912

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077012669A Withdrawn KR20070085776A (ko) 2004-12-06 2005-12-06 건식 에칭 방법 및 건식 에칭 장치

Country Status (5)

Country Link
US (2) US20080093338A1 (https=)
JP (1) JP4629421B2 (https=)
KR (1) KR20070085776A (https=)
TW (1) TW200629403A (https=)
WO (1) WO2006062085A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012087921A1 (en) * 2010-12-20 2012-06-28 Applied Materials, Inc. Methods for etching a substrate
US8492902B2 (en) 2010-09-27 2013-07-23 Samsung Electronics Co., Ltd. Multi-layer TSV insulation and methods of fabricating the same
KR20200011898A (ko) * 2018-07-25 2020-02-04 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20220119139A (ko) * 2019-12-23 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 반도체 애플리케이션들에 대해 재료 층을 에칭하기 위한 방법들

Families Citing this family (15)

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KR20080060017A (ko) * 2006-12-26 2008-07-01 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP5154260B2 (ja) * 2008-02-26 2013-02-27 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
TWI495009B (zh) * 2010-02-12 2015-08-01 Advanced Micro Fab Equip Inc A Plasma Etching Method with Silicon Insulating Layer
JP5943369B2 (ja) * 2011-02-09 2016-07-05 国立研究開発法人産業技術総合研究所 熱伝導積層膜部材及びその製造方法、これを用いた放熱部品及び放熱デバイス
US8691698B2 (en) * 2012-02-08 2014-04-08 Lam Research Corporation Controlled gas mixing for smooth sidewall rapid alternating etch process
US8951915B2 (en) 2012-09-11 2015-02-10 Infineon Technologies Ag Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements
KR102153246B1 (ko) * 2012-10-30 2020-09-07 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스
JP2015032597A (ja) * 2013-07-31 2015-02-16 日本ゼオン株式会社 プラズマエッチング方法
CN103820863A (zh) * 2014-02-25 2014-05-28 四川飞阳科技有限公司 石英衬底上多晶硅的刻蚀方法以及平面光波导的制作方法
KR102333443B1 (ko) 2014-10-24 2021-12-02 삼성전자주식회사 반도체 소자의 제조 방법
CN105752928B (zh) * 2014-12-16 2018-04-13 中芯国际集成电路制造(上海)有限公司 Mems器件的制作方法及mems器件
JP6492288B2 (ja) * 2015-10-01 2019-04-03 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6524419B2 (ja) * 2016-02-04 2019-06-05 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
TW202425121A (zh) * 2022-08-25 2024-06-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US20240395557A1 (en) * 2023-05-23 2024-11-28 Tokyo Electron Limited Systems and methods for semiconductor etching

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647512A (en) * 1986-03-20 1987-03-03 The Perkin-Elmer Corporation Diamond-like carbon films and process for production thereof
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JP2666768B2 (ja) * 1995-04-27 1997-10-22 日本電気株式会社 ドライエッチング方法及び装置
US6071822A (en) * 1998-06-08 2000-06-06 Plasma-Therm, Inc. Etching process for producing substantially undercut free silicon on insulator structures
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP2001057359A (ja) * 1999-08-17 2001-02-27 Tokyo Electron Ltd プラズマ処理装置
US6391788B1 (en) * 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
JP3920015B2 (ja) * 2000-09-14 2007-05-30 東京エレクトロン株式会社 Ｓｉ基板の加工方法
JP2002176182A (ja) * 2000-12-06 2002-06-21 Denso Corp 容量式力学量センサの製造方法
US20030003748A1 (en) * 2001-05-24 2003-01-02 Anisul Khan Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulator
EP1282159B1 (en) * 2001-07-23 2004-09-29 Infineon Technologies AG Method of forming an isolation layer and method of manufacturing a trench capacitor
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
JP2003273086A (ja) * 2002-03-19 2003-09-26 Matsushita Electric Ind Co Ltd ドライエッチング方法および半導体製造装置
US20030228768A1 (en) * 2002-06-05 2003-12-11 Applied Materials, Inc. Dielectric etching with reduced striation
US6897154B2 (en) * 2002-06-14 2005-05-24 Applied Materials Inc Selective etching of low-k dielectrics
US6939811B2 (en) * 2002-09-25 2005-09-06 Lam Research Corporation Apparatus and method for controlling etch depth
US20040077178A1 (en) * 2002-10-17 2004-04-22 Applied Materials, Inc. Method for laterally etching a semiconductor structure
US6905616B2 (en) * 2003-03-05 2005-06-14 Applied Materials, Inc. Method of releasing devices from a substrate
JP4065213B2 (ja) * 2003-03-25 2008-03-19 住友精密工業株式会社 シリコン基板のエッチング方法及びエッチング装置
JP3972846B2 (ja) * 2003-03-25 2007-09-05 セイコーエプソン株式会社 半導体装置の製造方法
JP4493516B2 (ja) * 2004-02-17 2010-06-30 三洋電機株式会社 半導体装置の製造方法
TWI249767B (en) * 2004-02-17 2006-02-21 Sanyo Electric Co Method for making a semiconductor device
US7232762B2 (en) * 2004-06-16 2007-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an improved low power SRAM contact

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492902B2 (en) 2010-09-27 2013-07-23 Samsung Electronics Co., Ltd. Multi-layer TSV insulation and methods of fabricating the same
WO2012087921A1 (en) * 2010-12-20 2012-06-28 Applied Materials, Inc. Methods for etching a substrate
KR20200011898A (ko) * 2018-07-25 2020-02-04 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20220119139A (ko) * 2019-12-23 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 반도체 애플리케이션들에 대해 재료 층을 에칭하기 위한 방법들

Also Published As

Publication number Publication date
WO2006062085A1 (ja) 2006-06-15
TW200629403A (en) 2006-08-16
JP2006165164A (ja) 2006-06-22
US20120094500A1 (en) 2012-04-19
JP4629421B2 (ja) 2011-02-09
US20080093338A1 (en) 2008-04-24

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