TW200629403A - Dry etching method and apparatus - Google Patents

Dry etching method and apparatus

Info

Publication number
TW200629403A
TW200629403A TW094142763A TW94142763A TW200629403A TW 200629403 A TW200629403 A TW 200629403A TW 094142763 A TW094142763 A TW 094142763A TW 94142763 A TW94142763 A TW 94142763A TW 200629403 A TW200629403 A TW 200629403A
Authority
TW
Taiwan
Prior art keywords
etching
layer
dry etching
stop layer
etching method
Prior art date
Application number
TW094142763A
Other languages
English (en)
Chinese (zh)
Inventor
Mitsuhiro Okune
Hiroyuki Suzuki
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of TW200629403A publication Critical patent/TW200629403A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW094142763A 2004-12-06 2005-12-05 Dry etching method and apparatus TW200629403A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004352614A JP4629421B2 (ja) 2004-12-06 2004-12-06 ドライエッチング方法及びドライエッチング装置

Publications (1)

Publication Number Publication Date
TW200629403A true TW200629403A (en) 2006-08-16

Family

ID=36577912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142763A TW200629403A (en) 2004-12-06 2005-12-05 Dry etching method and apparatus

Country Status (5)

Country Link
US (2) US20080093338A1 (https=)
JP (1) JP4629421B2 (https=)
KR (1) KR20070085776A (https=)
TW (1) TW200629403A (https=)
WO (1) WO2006062085A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495009B (zh) * 2010-02-12 2015-08-01 Advanced Micro Fab Equip Inc A Plasma Etching Method with Silicon Insulating Layer

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KR20080060017A (ko) * 2006-12-26 2008-07-01 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP5154260B2 (ja) * 2008-02-26 2013-02-27 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
KR20120031811A (ko) 2010-09-27 2012-04-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9318341B2 (en) 2010-12-20 2016-04-19 Applied Materials, Inc. Methods for etching a substrate
JP5943369B2 (ja) * 2011-02-09 2016-07-05 国立研究開発法人産業技術総合研究所 熱伝導積層膜部材及びその製造方法、これを用いた放熱部品及び放熱デバイス
US8691698B2 (en) * 2012-02-08 2014-04-08 Lam Research Corporation Controlled gas mixing for smooth sidewall rapid alternating etch process
US8951915B2 (en) 2012-09-11 2015-02-10 Infineon Technologies Ag Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements
KR102153246B1 (ko) * 2012-10-30 2020-09-07 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스
JP2015032597A (ja) * 2013-07-31 2015-02-16 日本ゼオン株式会社 プラズマエッチング方法
CN103820863A (zh) * 2014-02-25 2014-05-28 四川飞阳科技有限公司 石英衬底上多晶硅的刻蚀方法以及平面光波导的制作方法
KR102333443B1 (ko) 2014-10-24 2021-12-02 삼성전자주식회사 반도체 소자의 제조 방법
CN105752928B (zh) * 2014-12-16 2018-04-13 中芯国际集成电路制造(上海)有限公司 Mems器件的制作方法及mems器件
JP6492288B2 (ja) * 2015-10-01 2019-04-03 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6524419B2 (ja) * 2016-02-04 2019-06-05 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
CN110783187B (zh) * 2018-07-25 2024-04-19 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
WO2021127862A1 (en) * 2019-12-23 2021-07-01 Applied Materials, Inc. Methods for etching a material layer for semiconductor applications
TW202425121A (zh) * 2022-08-25 2024-06-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US20240395557A1 (en) * 2023-05-23 2024-11-28 Tokyo Electron Limited Systems and methods for semiconductor etching

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US4647512A (en) * 1986-03-20 1987-03-03 The Perkin-Elmer Corporation Diamond-like carbon films and process for production thereof
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JP2666768B2 (ja) * 1995-04-27 1997-10-22 日本電気株式会社 ドライエッチング方法及び装置
US6071822A (en) * 1998-06-08 2000-06-06 Plasma-Therm, Inc. Etching process for producing substantially undercut free silicon on insulator structures
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JP2003273086A (ja) * 2002-03-19 2003-09-26 Matsushita Electric Ind Co Ltd ドライエッチング方法および半導体製造装置
US20030228768A1 (en) * 2002-06-05 2003-12-11 Applied Materials, Inc. Dielectric etching with reduced striation
US6897154B2 (en) * 2002-06-14 2005-05-24 Applied Materials Inc Selective etching of low-k dielectrics
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JP4065213B2 (ja) * 2003-03-25 2008-03-19 住友精密工業株式会社 シリコン基板のエッチング方法及びエッチング装置
JP3972846B2 (ja) * 2003-03-25 2007-09-05 セイコーエプソン株式会社 半導体装置の製造方法
JP4493516B2 (ja) * 2004-02-17 2010-06-30 三洋電機株式会社 半導体装置の製造方法
TWI249767B (en) * 2004-02-17 2006-02-21 Sanyo Electric Co Method for making a semiconductor device
US7232762B2 (en) * 2004-06-16 2007-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an improved low power SRAM contact

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495009B (zh) * 2010-02-12 2015-08-01 Advanced Micro Fab Equip Inc A Plasma Etching Method with Silicon Insulating Layer

Also Published As

Publication number Publication date
WO2006062085A1 (ja) 2006-06-15
KR20070085776A (ko) 2007-08-27
JP2006165164A (ja) 2006-06-22
US20120094500A1 (en) 2012-04-19
JP4629421B2 (ja) 2011-02-09
US20080093338A1 (en) 2008-04-24

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