JP4360446B1 - 半導体装置の製造方法及び半導体装置 - Google Patents

半導体装置の製造方法及び半導体装置 Download PDF

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JP4360446B1
JP4360446B1 JP2009105605A JP2009105605A JP4360446B1 JP 4360446 B1 JP4360446 B1 JP 4360446B1 JP 2009105605 A JP2009105605 A JP 2009105605A JP 2009105605 A JP2009105605 A JP 2009105605A JP 4360446 B1 JP4360446 B1 JP 4360446B1
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Prior art keywords
adhesive film
semiconductor element
semiconductor
semiconductor device
manufacturing
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Expired - Fee Related
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JP2009105605A
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English (en)
Japanese (ja)
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JP2010118636A (ja
Inventor
暁嗣 佐々木
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Priority to JP2009105605A priority Critical patent/JP4360446B1/ja
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to KR1020117010506A priority patent/KR101225306B1/ko
Priority to PCT/JP2009/003359 priority patent/WO2010044179A1/ja
Priority to CN2009801411978A priority patent/CN102187442A/zh
Priority to EP09820358A priority patent/EP2341529A4/en
Priority to US13/122,034 priority patent/US8436479B2/en
Priority to TW098127557A priority patent/TWI427685B/zh
Priority to TW102142601A priority patent/TW201421553A/zh
Application granted granted Critical
Publication of JP4360446B1 publication Critical patent/JP4360446B1/ja
Publication of JP2010118636A publication Critical patent/JP2010118636A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C08L33/12—Homopolymers or copolymers of methyl methacrylate
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/334—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
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    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
JP2009105605A 2008-10-16 2009-04-23 半導体装置の製造方法及び半導体装置 Expired - Fee Related JP4360446B1 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2009105605A JP4360446B1 (ja) 2008-10-16 2009-04-23 半導体装置の製造方法及び半導体装置
PCT/JP2009/003359 WO2010044179A1 (ja) 2008-10-16 2009-07-16 半導体装置の製造方法及び半導体装置
CN2009801411978A CN102187442A (zh) 2008-10-16 2009-07-16 半导体装置的制造方法及半导体装置
EP09820358A EP2341529A4 (en) 2008-10-16 2009-07-16 METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT AND SEMICONDUCTOR ARRANGEMENT
KR1020117010506A KR101225306B1 (ko) 2008-10-16 2009-07-16 반도체 장치의 제조방법 및 반도체 장치
US13/122,034 US8436479B2 (en) 2008-10-16 2009-07-16 Semiconductor device having a chip bonding using a resin adhesive film and method of manufacturing the same
TW098127557A TWI427685B (zh) 2008-10-16 2009-08-17 半導體裝置之製造方法及半導體裝置
TW102142601A TW201421553A (zh) 2008-10-16 2009-08-17 半導體裝置之製造方法及半導體裝置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008267030 2008-10-16
JP2009105605A JP4360446B1 (ja) 2008-10-16 2009-04-23 半導体装置の製造方法及び半導体装置

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JP2009152185A Division JP2010118640A (ja) 2008-10-16 2009-06-26 半導体装置の製造方法及び半導体装置

Publications (2)

Publication Number Publication Date
JP4360446B1 true JP4360446B1 (ja) 2009-11-11
JP2010118636A JP2010118636A (ja) 2010-05-27

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JP2009105605A Expired - Fee Related JP4360446B1 (ja) 2008-10-16 2009-04-23 半導体装置の製造方法及び半導体装置
JP2009152185A Pending JP2010118640A (ja) 2008-10-16 2009-06-26 半導体装置の製造方法及び半導体装置

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JP2009152185A Pending JP2010118640A (ja) 2008-10-16 2009-06-26 半導体装置の製造方法及び半導体装置

Country Status (7)

Country Link
US (1) US8436479B2 (https=)
EP (1) EP2341529A4 (https=)
JP (2) JP4360446B1 (https=)
KR (1) KR101225306B1 (https=)
CN (1) CN102187442A (https=)
TW (2) TW201421553A (https=)
WO (1) WO2010044179A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011233599A (ja) * 2010-04-23 2011-11-17 Toshiba Corp 半導体装置の製造方法
JP2014090173A (ja) * 2013-11-01 2014-05-15 Sumitomo Bakelite Co Ltd 接着フィルム、半導体装置、多層回路基板および電子部品
US10920109B2 (en) 2016-03-28 2021-02-16 Lg Chem, Ltd. Semiconductor device

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5903779B2 (ja) * 2011-06-06 2016-04-13 日立化成株式会社 半導体装置及びその製造方法
JP2013038405A (ja) * 2011-07-08 2013-02-21 Sumitomo Bakelite Co Ltd ダイシングテープ一体型接着シート、半導体装置、多層回路基板及び電子部品
JP2013125787A (ja) * 2011-12-13 2013-06-24 Hitachi Chemical Co Ltd 半導体装置及びその製造方法
JP5892780B2 (ja) * 2011-12-19 2016-03-23 日東電工株式会社 半導体装置の製造方法
EP2800131A1 (en) * 2013-04-29 2014-11-05 ABB Technology AG Method for sinter bonding semiconductor devices
JP6223155B2 (ja) * 2013-11-29 2017-11-01 サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. 接着剤層用塗布組成物、半導体用接着フィルムおよびその製造方法、ならびに、これを用いた半導体装置の製造方法
TWI620360B (zh) * 2014-02-18 2018-04-01 緯創資通股份有限公司 電子元件封裝體及其製作方法
JP2015199814A (ja) * 2014-04-08 2015-11-12 住友ベークライト株式会社 樹脂組成物、接着フィルム、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、ダイシングテープ兼バックグラインドテープ一体型接着シート、および、電子装置
EP3147340A4 (en) * 2014-05-23 2018-01-03 Dexerials Corporation Adhesive agent and connection structure
TWI546934B (zh) * 2014-10-20 2016-08-21 錼創科技股份有限公司 Led陣列擴張方法及led陣列單元
KR20180113210A (ko) * 2016-02-26 2018-10-15 히타치가세이가부시끼가이샤 접착 필름 및 다이싱·다이 본딩 필름
US10253223B2 (en) 2016-03-31 2019-04-09 Lg Chem, Ltd. Semiconductor device and method for manufacturing the same using an adhesive
US10756119B2 (en) * 2016-04-20 2020-08-25 Samsung Display Co., Ltd. Display device and method for manufacturing same
JP7007827B2 (ja) * 2017-07-28 2022-01-25 日東電工株式会社 ダイボンドフィルム、ダイシングダイボンドフィルム、および半導体装置製造方法
JP7046586B2 (ja) * 2017-12-14 2022-04-04 日東電工株式会社 接着フィルムおよびダイシングテープ付き接着フィルム
KR102530763B1 (ko) 2018-09-21 2023-05-11 삼성전자주식회사 반도체 패키지의 제조방법
KR102710946B1 (ko) * 2019-01-28 2024-09-27 가부시끼가이샤 레조낙 접착제 조성물, 필름상 접착제, 접착 시트, 및 반도체 장치의 제조 방법
JP7258421B2 (ja) * 2019-02-15 2023-04-17 株式会社ディスコ ウェーハの加工方法
KR102428187B1 (ko) * 2019-07-03 2022-08-02 주식회사 엘지화학 점착 필름, 이의 제조 방법 및 이를 포함하는 플라스틱 유기 발광 디스플레이
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