TWI427685B - 半導體裝置之製造方法及半導體裝置 - Google Patents

半導體裝置之製造方法及半導體裝置 Download PDF

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Publication number
TWI427685B
TWI427685B TW098127557A TW98127557A TWI427685B TW I427685 B TWI427685 B TW I427685B TW 098127557 A TW098127557 A TW 098127557A TW 98127557 A TW98127557 A TW 98127557A TW I427685 B TWI427685 B TW I427685B
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Taiwan
Prior art keywords
adhesive film
semiconductor device
semiconductor element
semiconductor
manufacturing
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TW098127557A
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English (en)
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TW201017738A (en
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Akitsugu Sasaki
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Sumitomo Bakelite Co
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Publication of TW201017738A publication Critical patent/TW201017738A/zh
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
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Description

半導體裝置之製造方法及半導體裝置
本發明係關於一種半導體裝置之製造方法及半導體裝置。
近年來，對應於電子機器之高功能化等，對半導體裝置之高密度化、高積體化的要求增加，半導體裝置(以下亦稱為「半導體封裝」或「封裝」)之大容量高密度化不斷發展。為了應對此種要求，例如係採用於半導體元件(以下亦稱為「半導體晶片」或「晶片」)上黏接引線框架之晶片吊掛封裝(LOC，lead on chip)構造。於LOC構造中，由於係將半導體元件與引線框架接合，因此其接合部之黏接可靠性會對半導體裝置之可靠性有較大影響。
先前，半導體元件與引線框架之黏接係使用糊狀黏接劑，但適量地塗佈糊狀黏接劑未必容易，存在有黏接劑滲出至半導體元件之外周部之情況。
作為對應此種不良狀況之對策，例如於LOC構造中係採用使用了聚醯亞胺樹脂之熱熔型黏接劑薄膜等在耐熱性基材上塗佈有黏接劑之薄膜狀黏接劑(例如參照專利文獻1)。然而，此種熱熔型黏接劑薄膜必須於高溫下進行黏接，因此存在有對高密度化之半導體元件、引線框架造成熱損傷之情況。
又，於近年之半導體裝置中，亦出現了藉由在半導體元件上多段地積層半導體元件而實現半導體裝置之小型化、薄型化、大容量化者。此種半導體裝置中，使用雙順丁烯二醯亞胺-三基板或聚醯亞胺基板般之有機基板代替引線框架之情況不斷增加。隨著此種有機基板之增加，防止用以焊接半導體裝置之紅外線回焊時因半導體裝置內部之吸濕水分引起的龜裂之產生逐漸成為重要的技術課題，對於此種技術課題，已知特別是半導體元件黏接劑之貢獻較大。
於半導體元件上多段地積層半導體元件之晶片堆疊(COC，chip-on-chip)構造的半導體裝置中所使用之有機基板，相較於引線框架係較缺乏耐熱性，因此不適於高溫下之黏接。又，於COC構造之半導體裝置中，隨著其薄型化，半導體元件之薄型化得以發展，於迄今為止之高溫的貼附溫度下會產生半導體元件之翹曲變顯著之不良狀況。由於該等情況，對可於較迄今為止更低之溫度下進行熱壓合的薄膜狀黏接劑之要求提高。作為此種薄膜狀黏接劑，提出有包含熱塑性樹脂與熱硬化性樹脂之混合物的熱熔型黏接薄膜(例如參照專利文獻2～4)。
專利文獻1：日本專利特開平6-264035號公報
專利文獻2：日本專利特開2002-121530號公報
專利文獻3：日本專利特開2002-256235號公報
專利文獻4：日本專利特開2003-096426號公報
然而，上述文獻記載之習知技術於以下方面尚有改善之餘地。第一，於專利文獻2中，由於使用聚醯亞胺樹脂作為熱塑性樹脂、使用環氧樹脂作為熱硬化性樹脂，故此種黏接薄膜雖然耐熱性、可靠性優異，但於高溫狀態下熔融黏度才開始下降，而且最低熔融黏度較高，故低溫下之濕潤性不足，因此具有以下問題：難以於80℃～150℃左右之低溫進行貼附，而難以應用於薄型且多段地積層有半導體元件之半導體裝置。
第二，於專利文獻3中，為了改善低溫下之濕潤性而使用以丙烯酸系橡膠為主成分之樹脂作為玻璃轉移溫度較低之熱塑性樹脂，但由於熱塑性樹脂之分子量較高，故薄膜狀黏接劑缺乏流動性，從而產生以下不良狀況：無法填埋因設置於有機基板上之電路所引起之階差，而殘留有間隙，於高溫時容易引起剝離。
第三，於專利文獻4中記載有製成具有熱硬化時之黏接力較高之黏接劑層A、與配線嵌入性較高之黏接劑層B的兩種黏接劑層的黏接構件，但由於含有流動量較大之黏接劑層B以提高配線嵌入性，因而殘留有無法抑制黏接劑向半導體元件之外周部滲出等問題。
第四，亦考慮到藉由提高低分子量之熱硬化成分之含量而使其具有流動性、以填埋有機基板之階差之方法，但薄膜狀黏接劑缺乏可撓性，於將附有切割膠帶之黏接薄膜層壓於晶圓背面的情況等下，容易預測到會產生薄膜狀黏接劑容易發生破損之不良狀況。
本發明之目的在於提供一種半導體裝置之製造方法，其可將半導體元件與引線框架、有機基板等半導體元件搭載用支持構件於相對較低之溫度範圍內予以黏接，而不會對黏接性、作業性造成障礙，且可抑制空隙之產生。又，本發明之目的在於提供一種半導體裝置，其係藉由上述半導體裝置之製造方法製造而成者，且可靠性優異。
本發明之半導體裝置之製造方法係經由黏接薄膜之硬化物將半導體元件與支持構件黏接者，其特徵在於，按下述步驟(a)～(d)之順序進行：(a)準備附有黏接薄膜之半導體元件之步驟；(b)將上述附有黏接薄膜之半導體元件熱壓合於上述支持構件，獲得由上述附有黏接薄膜之半導體元件與上述支持構件所構成的半導體零件之熱壓合步驟；(c)使用加壓流體對由上述附有黏接薄膜之半導體元件與上述支持構件所構成的上述半導體零件進行加熱、加壓，進行黏接薄膜之硬化的加壓固化步驟；以及(d)將上述附有黏接薄膜之半導體元件與上述支持構件予以電性連接之步驟。
於本發明之半導體裝置之製造方法中，在進行了將附有黏接薄膜之半導體元件熱壓合於支持構件之熱壓合步驟(b)後，進行使黏接薄膜硬化之加壓固化步驟(c)，藉此可抑制黏接薄膜內部產生空隙，又，亦可填埋黏接薄膜與半導體元件之界面、以及黏接薄膜與支持構件之界面的間隙。其原因在於：黏接薄膜於熱壓合步驟(b)中未完全硬化，藉由進一步加熱而達到軟化或可移動之程度的硬化程度，因此於加壓固化步驟(c)中進行加熱的同時亦進行加壓，藉此黏接薄膜之硬化進一步進行，並且能以擠除空隙、填埋間隙之方式移動。
本發明之半導體裝置之製造方法中，可使上述加壓流體為加壓氣體。
本發明之半導體裝置之製造方法中，可使上述加壓流體為加壓空氣。
本發明之半導體裝置之製造方法中，可於上述加壓固化步驟(c)中使用壓力容器，於該壓力容器內設置由上述附有黏接薄膜之半導體元件與支持構件所構成的半導體零件，藉由上述加壓流體進行加熱、加壓。
本發明之半導體裝置之製造方法中，可將上述加壓固化步驟(c)中之加熱、加壓條件設為：加熱溫度為80℃以上、180℃以下，加壓力為0.1MPa以上、10MPa以下，加壓時間為1分鐘以上、480分鐘以下。
本發明之半導體裝置之製造方法中，可使進行上述步驟(a)前之上述黏接薄膜於100～150℃之熔融黏度為10Pa‧s以上、1000Pa‧s以下。
本發明之半導體裝置之製造方法中，可藉由上述加壓固化步驟(c)減少空隙與間隙，且經上述加壓固化步驟(c)後，於上述黏接薄膜內部不存在直徑為30μm以上之空隙。
本發明之半導體裝置之製造方法中，可使上述黏接薄膜含有(甲基)丙烯酸系樹脂。
本發明之半導體裝置之製造方法中，可使上述黏接薄膜含有(甲基)丙烯酸系樹脂，且上述(甲基)丙烯酸系樹脂相對於樹脂總體之含量為10%以上、50%以下。
本發明之半導體裝置之製造方法中，可使上述黏接薄膜進一步含有熱硬化性樹脂。
本發明之半導體裝置之製造方法中，可使上述(甲基)丙烯酸系樹脂相對於上述熱硬化性樹脂100重量份之含量為10重量份以上、100重量份以下。
本發明之半導體裝置之製造方法中，可使上述步驟(a)按下述(a1)～(a3)之順序進行：(a1)以成為晶圓、黏接薄膜、切割膠帶之順序的方式於上述晶圓之背面層壓附有切割膠帶之黏接薄膜之步驟；(a2)對上述晶圓與所層壓之上述附有切割膠帶之黏接薄膜進行一體切割之步驟；以及(a3)將上述切割膠帶剝離，形成附有黏接薄膜之半導體元件之步驟。
本發明之半導體裝置之特徵在於：其係藉由上述製造方法而製造者。
根據本發明，可獲得一種半導體裝置之製造方法，其可將半導體元件與引線框架、有機基板等半導體元件搭載用支持構件，於相對較低之溫度範圍內黏接而不會對黏接性、作業性造成障礙，且可抑制空隙之產生。又，根據本發明，可獲得一種半導體裝置，其係藉由上述半導體裝置之製造方法製造而成者，且可靠性優異。
上述目的及其他目的、特徵及優點係藉由以下將述之較佳實施形態、以及其所隨附之以下圖式而進一步明瞭。
以下，對本發明之半導體裝置之製造方法及半導體裝置進行說明。本發明之半導體裝置之製造方法係經由黏接薄膜之硬化物將半導體元件與支持構件黏接者，其特徵在於，按步驟(a)～(d)之順序進行：(a)準備附有黏接薄膜之半導體元件之步驟；(b)將附有黏接薄膜之半導體元件熱壓合於支持構件，獲得由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件之熱壓合步驟；(c)使用加壓流體對由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件進行加熱、加壓，而進行黏接薄膜之硬化的加壓固化步驟；以及(d)將半導體元件與支持構件加以電性連接之步驟。藉此可獲得能夠將半導體元件與引線框架、有機基板等半導體元件搭載用支持構件於低於150℃般之相對較低之溫度範圍內黏接，而不會對黏接性、作業性造成障礙，且可抑制空隙之產生的半導體裝置之製造方法。又，本發明之半導體裝置之特徵在於：係藉由上述製造方法製造而成者。藉此可獲得可靠性優異之半導體裝置。以下對本發明進行詳細說明。
本發明之半導體裝置之製造方法係包括(a)準備附有黏接薄膜之半導體元件之步驟。(a)準備附有黏接薄膜之半導體元件之步驟並無特別限定，例如可舉出：於已單片化之半導體元件之背面貼附黏接薄膜之方法，使用旋塗機等在晶圓背面以均勻之厚度塗佈黏接薄膜並加以單片化之方法等，由避免步驟煩雜之觀點而言，更佳為依序進行下述(a1)～(a3)所示之步驟的方法。
(a1)以成為晶圓、黏接薄膜、切割膠帶之順序的方式，於晶圓之背面層壓附有切割膠帶之黏接薄膜之步驟；
(a2)對晶圓與所層壓之附有切割膠帶之黏接薄膜進行一體切割之步驟；以及
(a3)將切割膠帶剝離，形成附有黏接薄膜之半導體元件之步驟。
圖1表示對準備附有黏接薄膜之半導體元件之步驟之一例加以說明的剖面圖，其詳細內容將於下文闡述。
本發明之半導體裝置之製造方法係包括(b)熱壓合步驟，該熱壓合步驟係將附有黏接薄膜之半導體元件熱壓合於支持構件，而獲得由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件。熱壓合步驟係使用通常之貼片機等，熱壓合之方法有：將支持構件載置於熱板上而抵壓附有黏接薄膜之半導體元件之方法；或使附有黏接薄膜之半導體元件抵壓於支持構件，同時通過抵壓冶具並傳熱之方法；或將該兩種方法組合之方法等。熱壓合之溫度條件並無特別限定，較佳為60℃以上、180℃以下，更佳為80℃以上、150℃以下。藉由以上述下限值以上之溫度進行熱壓合，附有黏接薄膜之半導體元件與支持構件之黏接變得充分，可抑制於搬送中附有黏接薄膜之半導體元件之脫落。又，藉由以上述上限值以下之溫度進行熱壓合，可抑制支持構件及附有黏接薄膜之半導體元件之翹曲，而能以黏接位置不偏離之狀態進行貼附。又，藉由以上述上限值以下之溫度進行熱壓合，可抑制黏接薄膜之硬化，藉此可利用加壓固化步驟(c)中之加熱、加壓而以擠除空隙、填埋間隙之方式移動。又，熱壓合之時間條件並無特別限定，較佳為0.1秒以上、60秒以下，更佳為0.5秒以上、5秒以下。藉由以上述下限值以上之時間進行熱壓合，附有黏接薄膜之半導體元件與支持構件之黏接變得充分，可抑制於搬送中附有黏接薄膜之半導體元件之脫落。又，藉由以上述上限值以下之時間進行熱壓合，可抑制黏接薄膜之硬化，藉此可利用加壓固化步驟(c)中之加熱、加壓而以擠除空隙、填埋間隙之方式移動。熱壓合之壓力條件並無特別限定，較佳為1kPa以上、1MPa以下，更佳為3kPa以上、0.5MPa以下。藉由以上述上限值以下之壓力進行熱壓合，可抑制半導體元件之破損。又，藉由以上述下限值以上之壓力進行熱壓合，附有黏接薄膜之半導體元件與支持構件之黏接變得充分，可抑制於搬送中附有黏接薄膜之半導體元件之脫落。再者，本發明中所述之支持構件係亦包括雙順丁烯二醯亞胺-三基板或聚醯亞胺基板般之有機基板，及於該有機基板上積層有一段以上之半導體元件或間隔件等者等。
本發明之半導體裝置之製造方法係包括(c)加壓固化步驟，該加壓固化步驟係使用加壓流體對由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件進行加熱、加壓，而進行黏接薄膜之硬化。於本發明之半導體裝置之製造方法中，在進行了將附有黏接薄膜之半導體元件熱壓合於支持構件之熱壓合步驟(b)後，進行使黏接薄膜硬化之加壓固化步驟(c)，藉此可抑制黏接薄膜內部產生空隙，且可填埋黏接薄膜與半導體元件之界面、以及黏接薄膜與支持構件之界面的間隙。其原因在於：黏接薄膜於熱壓合步驟(b)中至少未完全硬化，藉由進一步加熱而達到軟化或可移動之程度的硬化程度，因此於加壓固化步驟(c)中進行加熱之同時亦進行加壓，藉此使黏接薄膜之硬化進一步進行，並且能以擠除空隙、填埋間隙之方式移動。
圖2表示對熱壓合步驟(b)後之狀態之一例加以說明的剖面圖，圖3表示對加壓固化步驟(c)後之狀態之一例加以說明的剖面圖。如圖2所示，例如支持構件為由具有電路之有機材料所形成之基板13時，於成為被黏附面之基板13表面存在由電路引起之凹凸，因此附有黏接薄膜12之半導體元件11的黏接薄膜12與基板13之界面容易殘留間隙14，但藉由進行加壓固化步驟(c)，如圖3所示，即便於成為被黏附面之基板13表面存在凹凸亦可填埋間隙14。
再者，所謂黏接薄膜內部之空隙、以及黏接薄膜與半導體元件之界面及黏接薄膜與支持構件之界面的間隙，不僅係指熱壓合步驟中未完全嵌入之黏接薄膜與支持構件之界面的間隙、或由於加熱而由黏接薄膜自身產生之氣體所引起者，亦包括由支持構件之有機基板產生之氣體所引起者。於欲不進行加壓固化步驟(c)而僅藉由熱壓合步驟(b)填埋黏接薄膜與支持構件之界面間隙之情況下，亦考慮到使用黏度更低之黏接薄膜藉由熱壓合步驟(b)完成界面間隙之填埋，進而僅進行加熱處理使黏接薄膜硬化之方法，但此情況下，一般認為由支持構件之有機基板產生之氣體所引起的空隙或間隙之再產生會顯著出現，而設想必須追加例如於即將進行熱壓合步驟(b)之前使支持構件乾燥而除去支持構件中之吸濕水分的步驟等。相對於此，根據本發明之半導體裝置之製造方法，不追加於即將進行熱壓合步驟(b)之前使支持構件乾燥而除去支持構件中之吸濕水分的步驟等就可抑制黏接薄膜內部產生空隙，且可填埋黏接薄膜與半導體元件之界面、以及黏接薄膜與支持構件之界面的間隙。又，並不利用壓製而是使用加壓流體進行加熱、加壓，藉此可對由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件自所有方向均等地施加壓力，因此可防止黏接薄膜向半導體元件之周圍滲出。
加壓固化步驟(c)中所用之加壓流體，係指用於加壓之流體，作為此種流體，並無特別限定，較佳為氮氣、氬氣、空氣等氣體。藉此，與使用液體之情況相比，可抑制對附有黏接薄膜之半導體元件或支持構件之影響。又，由與使用氮氣或氬氣等之情況相比可廉價地製造半導體裝置之觀點而言，氣體之中較佳為空氣。
於加壓固化步驟(c)中，使用加壓流體進行加熱、加壓之方法並無特別限定，較佳為使用壓力容器進行。藉由使用壓力容器，可對黏接薄膜均等地施加壓力而不會滲出，並且可抑制黏接薄膜內部產生空隙，且填埋黏接薄膜與半導體元件之界面、及黏接薄膜與支持構件之界面的間隙。具體可舉出：於壓力容器內設置由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件，藉由加壓流體進行加熱、加壓之方法。
作為藉由加壓流體直接進行加熱、加壓之更具體的方法，如圖4所示，可舉出：(i)於壓力容器16內設置由附有黏接薄膜12之半導體元件11與基板13(支持構件)所構成的半導體零件15，使加壓流體自加壓流體注入口17流入至壓力容器16中，並且視需要對壓力容器進行加熱之方法(圖4(a))；(ii)於壓力容器16內設置由附有黏接薄膜12之半導體元件11與基板13(支持構件)所構成的半導體零件15，進而以覆蓋該半導體零件15之方式設置覆蓋薄膜18，而且使加壓流體自壓力容器16之覆蓋薄膜18側流入，並且視需要對壓力容器16進行加熱之方法(圖4(b))；(iii)於壓力容器16內設置由附有黏接薄膜12之半導體元件11與基板13(支持構件)所構成的半導體零件15，進而以可自上向下擠壓該半導體零件15之方式設置袋狀薄膜19，而且使加壓流體流入至壓力容器16內之袋狀薄膜19中，並且視需要對壓力容器16進行加熱之方法(圖4(c))等。
又，關於在壓力容器內設置由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件之方法，並無特別限定，例如可舉出：將如MAP方式般於大型基板上矩陣狀地配置有數個半導體元件者，設著間隔而排列數個之方法等。進而，於上述(i)之方法中，藉由將放入有數片大型基板之基板收納匣盒等設著間隔而排列數個，即便一次性對大量之大型基板進行加壓固化，亦可對所有黏接薄膜均等地施加壓力。於此種方面而言，較理想為使用上述(i)之方法。
加壓固化步驟(c)中之加熱條件並無特別限定，較佳為80℃以上、180℃以下，更佳為100℃以上、150℃以下。藉由為上述下限值以上，可迅速進行黏接薄膜之硬化，藉此可縮短加壓固化步驟(c)。又，藉由為上述上限值以下，可抑制由來自黏接薄膜自身之逸氣及來自支持構件之逸氣所引起的黏接薄膜與支持構件之界面的間隙之再產生。
加壓固化步驟(c)中之加壓條件並無特別限定，較佳為0.1MPa以上、10MPa以下，更佳為0.2MPa以上、2MPa以下。藉由為上述下限值以上，可抑制黏接薄膜內部之空隙的產生，且可填埋黏接薄膜與半導體元件之界面、及黏接薄膜與支持構件之界面的間隙，藉由為上限值以下，可防止加壓固化步驟(c)中之半導體元件之破損。
加壓固化步驟(c)中之加壓時間並無特別限定，較佳為1分鐘以上、480分鐘以下，更佳為3分鐘以上、240分鐘以下。藉由使加壓時間為下限值以上，黏接薄膜硬化，可於(d)將半導體元件與支持構件加以電性連接之步驟中進行穩定之連接。又，藉由為上限值以下，可防止黏接薄膜之過硬化，而可防止支持構件之翹曲。
本發明之半導體裝置之製造方法較佳為於經加壓固化步驟(c)後，在黏接薄膜內部不存在直徑為30μm以上之空隙，更佳為不存在直徑為10μm以上之空隙。藉由不存在直徑為30μm以上之空隙，於高溫時不易發生界面剝離，可保持本發明之半導體裝置之充分的耐回焊性。
本發明之半導體裝置之製造方法係包括(d)將半導體元件與支持構件加以電性連接之步驟。如圖5所示，作為將附有黏接薄膜22之半導體元件21與基板23(支持構件)加以電性連接之方式，廣泛地使用有利用接線24進行連接之打線接合法。再者，藉由步驟(d)，可進一步進行黏接薄膜之硬化。
本發明之半導體裝置之製造方法並無特別限定，於進行了上述步驟(a)～步驟(d)後，如圖6所示，可於由附有黏接薄膜22之半導體元件21與基板23(支持構件)所構成的半導體零件15之搭載有半導體元件21之側的單面，藉由轉印成形、壓縮成形、射出成形等成形方法使半導體密封用樹脂組成物成形、硬化，藉此利用密封材料31密封半導體元件21以及其電性接合部，並加以保護。
進而，藉由屬於密封材料的半導體密封用樹脂組成物之硬化物將半導體元件等密封而成之半導體裝置，可直接搭載於電子機器等中，或者可於作為後固化的80℃～200℃左右之溫度下、歷時10分鐘～10小時左右之時間使半導體密封用樹脂組成物完全硬化後，搭載於電子機器等中。再者，藉由半導體密封用樹脂之成形步驟、後固化步驟，可進一步進行黏接薄膜之硬化。再者，於由附有黏接薄膜之半導體元件與支持構件所構成的半導體零件為於大型基板上矩陣狀地配置有數個半導體元件之MAP方式的情況下，可藉由半導體密封用樹脂組成物將搭載有半導體元件之側的單面一次地密封成形後，切割成各個封裝。
繼而，依步驟之流程對使用黏接薄膜製造半導體裝置之方法的詳細內容之一例進行說明。
如圖1(a1)所示，以成為晶圓1、黏接薄膜2、切割膠帶5之黏著劑層3、切割膠帶5之基材膜4之順序的方式，於晶圓1之背面層壓附有切割膠帶之黏接薄膜，於未圖示之切割台上藉由晶圓環6進行固定。繼而，對晶圓1與所層壓之附有切割膠帶5之黏接薄膜2進行一體切割，將半導體元件1單片化(圖1(a2-1))。
繼而，藉由未圖示之延伸裝置拉伸切割膠帶5，將單片化之半導體元件1拉開成一定間隔(圖1(a2-2))，然後拾取自切割膠帶5剝離之附有黏接薄膜之半導體元件7(圖1(a3))，熱壓合於基板13，而獲得半導體零件15(圖2)。作為基板13，例如可使用於玻璃纖維中含浸有環氧樹脂之基板、聚醯亞胺基板及雙順丁烯二醯亞胺-三樹脂基板等。
繼而，於壓力容器16內對所得之半導體零件15進行加壓固化(圖4(i))後，藉由打線接合將半導體元件21與基板23(支持構件)加以電性連接(圖5)，並藉由密封材料31進行半導體零件15之密封等(圖6)。
以上參照圖式對本發明之實施形態進行了闡述，但其等為本發明之例示，亦可採用上述以外之各種構成。
繼而，對本發明之半導體裝置之製造方法中所用的黏接薄膜進行說明。
本發明之半導體裝置之製造方法中所用的黏接薄膜，係於進行步驟(a)前之100～150℃之熔融黏度較佳為10Pa‧s以上，更佳為50Pa‧s以上。藉此可於熱壓合步驟(b)中抑制黏接薄膜向半導體元件之外周部滲出。另一方面，黏接薄膜於進行步驟(a)前之100～150℃之熔融黏度較佳為1000Pa‧s以下，更佳為500Pa‧s以下，特佳為350Pa‧s以下。藉此可利用加壓固化步驟(c)中之加熱、加壓以擠除空隙、填埋間隙之方式移動。
本發明中之熔融黏度例如可使用屬於黏彈性測定裝置的流變計(rheometer)，以10℃/分鐘之升溫速度對薄膜狀態之樣品施加頻率為1Hz之剪切而進行測定。又，本發明中之熔融黏度係表示與動態黏彈性不同的溶液之物性者。
繼而，對構成黏接薄膜之樹脂組成物之各成分進行說明。再者，各成分可使用一種化合物，亦可將數種化合物組合使用。
構成本發明之黏接薄膜之樹脂組成物並無特別限定，較佳為含有(甲基)丙烯酸系樹脂。(甲基)丙烯酸系樹脂為(甲基)丙烯酸酯與其他單體之共聚物，較佳為以(甲基)丙烯酸及其衍生物為主要單體之(甲基)丙烯酸系樹脂。
作為(甲基)丙烯酸酯，可舉出：丙烯酸甲酯、丙烯酸乙酯等丙烯酸酯，甲基丙烯酸甲酯、甲基丙烯酸乙酯等甲基丙烯酸酯。又，作為其他單體，可舉出：丙烯酸、甲基丙烯酸、丙烯腈、丙烯醯胺等。
(甲基)丙烯酸系樹脂由於玻璃轉移溫度較低，因此藉由調配至樹脂組成物中可提高初期密接性。此處，所謂初期密接性，係指將黏接薄膜黏接於半導體元件時之密接性，特別係指半導體元件為晶圓狀態時之對晶圓背面之密接性。
又，(甲基)丙烯酸系樹脂較佳為具有環氧基、羥基、羧基、腈基等之(甲基)丙烯酸酯共聚物。藉此，可進一步提高對半導體元件之背面、及支持構件等被黏附體之密接性。作為具有此種官能基之化合物，具體可舉出：具有環氧丙醚基之(甲基)丙烯酸環氧丙酯、具有羥基之羥基(甲基)丙烯酸酯、具有羧基之羧基(甲基)丙烯酸酯、具有腈基之(甲基)丙烯腈等。
該等之中，特佳為使用含有具有羧基之單體單位的(甲基)丙烯酸酯共聚物。藉此，黏接薄膜之硬化得到進一步促進，因此可短時間進行加壓固化步驟(c)且牢固地黏接於被黏附體。
至於含有具有羧基之單體單位的(甲基)丙烯酸酯共聚物之含量，由進一步於短時間內進行加壓固化步驟(c)且牢固地黏接於被黏附體之觀點而言，例如較佳為(甲基)丙烯酸系樹脂總體之0.5質量%以上，更佳為1質量%以上。又，至於具有羧基之化合物之含量，由進一步提高黏接薄膜之保存性之觀點而言，例如較佳為(甲基)丙烯酸系樹脂總體之10質量%以下，更佳為5質量%以下。
(甲基)丙烯酸系樹脂之重量平均分子量例如較佳為10萬以上、130萬以下，更佳為15萬以上、100萬以下。藉由設定為上述下限值以上，可進一步提高黏接薄膜之成膜性，藉由設定為上述上限值以下，可確保黏接時之流動性。
(甲基)丙烯酸系樹脂相對於樹脂總體之含量較佳為10%以上，更佳為25%以上。藉此有助於黏接性之提高。(甲基)丙烯酸系樹脂相對於樹脂總體之含量較佳為50%以下，更佳為40%以下。藉此有助於作業性之提高。
(甲基)丙烯酸系樹脂之重量平均分子量例如可藉由凝膠滲透層析法(GPC，Gel Permeation Chromatography)進行測定，作為測定條件例，可舉出：使用東曹(Tosoh)股份有限公司製造之高速GPC SC-8020裝置，管柱為TSK-GEL GMHXL-L，溫度為40℃，溶劑為四氫呋喃等。
至於(甲基)丙烯酸系樹脂之玻璃轉移溫度，由抑制黏接薄膜之黏著變得過強而進一步提高作業性之觀點而言，例如較佳為0℃以上，更佳為5℃以上。又，由進一步提高低溫時之黏接性之觀點而言，丙烯酸系樹脂之玻璃轉移溫度例如較佳為30℃以下，更佳為20℃以下。
(甲基)丙烯酸系樹脂之玻璃轉移溫度例如可使用熱機械特性分析裝置(Seiko Instruments股份有限公司製造、TMA/SS6100)，根據一面以升溫速度5℃/分鐘自-65℃起升溫、一面以一定負重(10mN)進行拉伸時之反曲點進行測定。
構成本發明之黏接薄膜之樹脂組成物並無特別限定，較佳為含有熱硬化性樹脂，更佳為含有環氧樹脂。環氧樹脂係指具有環氧基之單體、寡聚物以及聚合物中之任一種。作為環氧樹脂之具體例，可舉出：苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂；雙酚A型環氧樹脂、雙酚F型環氧樹脂等雙酚型環氧樹脂；對苯二酚型環氧樹脂；聯苯型環氧樹脂；二苯乙烯型環氧樹脂；三苯酚甲烷型環氧樹脂；含三核之環氧樹脂；二環戊二烯改質苯酚型環氧樹脂；萘酚型環氧樹脂、以及具有伸苯基及/或伸聯苯基骨架之苯酚芳烷型環氧樹脂、具有伸苯基及/或伸聯苯基骨架之萘酚芳烷型環氧樹脂等芳烷型環氧樹脂等。
該等之中，較佳為使用酚醛清漆型環氧樹脂、芳烷型環氧樹脂等。藉由使用芳烷型環氧樹脂，可於熱壓合步驟(b)之100℃～150℃附近將黏接薄膜之複數黏度∣c*∣之變化抑制於一定範圍，因此可於一般之熱壓合溫度、即100℃～150℃之溫度範圍內抑制黏接薄膜之流動量的變動。又，藉由使用酚醛清漆型環氧樹脂，可提高黏接薄膜硬化後之玻璃轉移溫度，又，可提高黏接薄膜與被黏附體之密接性。
(甲基)丙烯酸系樹脂相對於熱硬化性樹脂100重量份之含量較佳為10重量份以上，更佳為30重量份以上。藉此可使黏接薄膜之作業性良好。又，(甲基)丙烯酸系樹脂相對於熱硬化性樹脂100重量份之含量較佳為100重量份以下，更佳為80重量份以下。
環氧樹脂之含量並無特別限定，相對於(甲基)丙烯酸酯共聚物100質量份，較佳為100質量份以上、1000質量份以下，特佳為200質量份以上、500質量份以下。藉由設定為上述範圍，可兼具黏接薄膜硬化後之較低線膨脹係數與韌性。更佳為350質量份以下。藉此可進一步兼具黏接薄膜硬化後之較低線膨脹係數與韌性。
芳烷型環氧樹脂之含量並無特別限定，相對於環氧樹脂總體較佳為30～80質量%，特佳為40～70質量%。藉由設定為上述範圍，可於一般的使半導體元件熱壓合之溫度、即100℃～150℃附近將黏接薄膜之複數黏度∣c*∣之變化抑制於一定範圍，因此可抑制黏接薄膜之流動量的變動，進而可提高硬化後之黏接薄膜之玻璃轉移溫度。
至於環氧樹脂之軟化點，只要為與(甲基)丙烯酸系樹脂具有相溶性者則並無特別限定，較佳為40℃以上、100℃以下，更佳為50℃以上、90℃以下。藉由設定為上述下限值以上，可減低黏接薄膜之黏性，因此可於藉由切割使晶圓單片化後使附有黏接薄膜之半導體元件自切割膠帶之剝離性提高，從而提高拾取性。又，藉由設定為上述上限值以下，可抑制加壓固化步驟(c)前之熔融黏度之上升。
又，作為環氧樹脂，可將軟化點不同的數種環氧樹脂組合使用。藉此具有以下優點：更容易使降低黏接薄膜黏性之效果、與抑制加壓固化步驟(c)前之熔融黏度上升的效果並存。例如，作為軟化點不同的數種環氧樹脂之組合，可舉出：軟化點為40℃以上、未達70℃之環氧樹脂與軟化點為70℃以上、100℃以下之環氧樹脂之組合等。
構成本發明之黏接薄膜之樹脂組成物並無特別限定，較佳為含有硬化劑。硬化劑只要作為環氧樹脂之硬化劑而發揮作用則可適當選擇使用。具體可舉出：二乙三胺、三乙四胺、間苯二甲胺等脂肪族多胺，二胺基二苯基甲烷、間苯二胺、二胺基二苯基碸等芳香族多胺，包括二氰基二醯胺、有機酸二醯肼等之多胺化合物等胺系硬化劑；六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐等脂肪族酸酐，偏苯三甲酸酐、均苯四甲酸二酐、二苯甲酮四甲酸二酐等芳香族酸酐等酸酐系硬化劑；苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、苯酚芳烷(含有伸苯基、伸聯苯基骨架)樹脂、萘酚芳烷(含有伸苯基、伸聯苯基骨架)樹脂、三苯酚甲烷樹脂、二環戊二烯型酚樹脂、雙(單或二-第三丁基苯酚)丙烷、亞甲基雙(2-丙烯基)苯酚、伸丙基雙(2-丙烯基)苯酚、雙[(2-丙烯氧基)苯基]甲烷、雙[(2-丙烯氧基)苯基]丙烷、4,4'-(1-甲基亞乙基)雙[2-(2-丙烯基)苯酚]、4,4'-(1-甲基亞乙基)雙[2-(1-苯基乙基)苯酚]、4,4'-(1-甲基亞乙基)雙[2-甲基-6-羥基甲基苯酚]、4,4'-(1-甲基亞乙基)雙[2-甲基-6-(2-丙烯基)苯酚]、4,4'-(1-甲基亞十四烷基)雙酚等酚系硬化劑等。
至於本發明中所用之構成黏接薄膜之樹脂組成物中的硬化劑之含量，可計算環氧樹脂之環氧當量與硬化劑之當量比而求得。於硬化劑為酚樹脂時，關於環氧樹脂之環氧當量與硬化劑之官能基之當量比，較佳為0.5以上、1.5以下，特佳為0.7以上、1.3以下。藉由設定為上述範圍，可兼具黏接薄膜之耐熱性與保存性。
硬化劑較佳為使用於25℃之黏度為30Pa‧s(30,000cps)以下之液狀硬化劑。更佳為於25℃之黏度為10Pa‧s(10,000cps)以下之液狀硬化劑。藉由使硬化劑於25℃之黏度為上述規定值以下，可提高黏接薄膜之初期密接性或半導體裝置之可靠性。
於25℃之黏度為30Pa‧s(30,000cps)以下之液狀硬化劑之含量並無特別限定，相對於硬化劑總體較佳為30～80質量%，特佳為40～70質量%。藉由設定為上述下限值以上，可抑制加壓固化步驟(c)前之熔融黏度之上升，藉由設定為上述上限值以下，可降低黏接薄膜之黏性，因此可提高作業性。
作為於25℃之黏度為30Pa‧s(30,000cps)以下之液狀硬化劑，可舉出液狀酚化合物。具體可舉出：雙(單或二-第三丁基苯酚)丙烷、亞甲基雙(2-丙烯基)苯酚、伸丙基雙(2-丙烯基)苯酚、雙[(2-丙烯氧基)苯基]甲烷、雙[(2-丙烯氧基)苯基]丙烷、4,4'-(1-甲基亞乙基)雙[2-(2-丙烯基)苯酚]、4,4'-(1-甲基亞乙基)雙[2-(1-苯基乙基)苯酚]、4,4'-(1-甲基亞乙基)雙[2-甲基-6-羥基甲基苯酚]、4,4'-(1-甲基亞乙基)雙[2-甲基-6-(2-丙烯基)苯酚]、4,4'-(1-甲基亞十四烷基)雙酚。該等液狀酚化合物黏度可藉由核體數n或苯環取代基之種類加以控制。
作為硬化劑，除了液狀酚化合物外亦可併用添加固形酚樹脂。所謂固形，係指於25℃常壓下為固體狀態。藉由併用固形酚樹脂，可減輕室溫下之半導體用黏接薄膜之黏性，提高作業性。又，該固形酚樹脂係指可與上述環氧樹脂進行硬化反應而形成交聯構造之具有至少2個以上的酚性羥基之單體、寡聚物、聚合物整體，例如可舉出：苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、苯酚芳烷(含有伸苯基、伸聯苯基骨架)樹脂、萘酚芳烷(含有伸苯基、伸聯苯基骨架)樹脂、三苯酚甲烷樹脂、二環戊二烯型酚樹脂等，該等不僅可單獨使用，亦可使用數種。
固形酚樹脂之含量並無特別限定，環氧樹脂之環氧當量與液狀酚化合物以及固形酚樹脂之合計官能基當量之比較佳為0.5以上、1.5以下，特佳為0.7以上、1.3以下。藉由設定為上述範圍，可兼具黏接薄膜之耐熱性與保存性。
(甲基)丙烯酸系樹脂之含量並無特別限定，較佳為少於環氧樹脂與硬化劑之合計調配量。藉此可有效地抑制於加壓固化步驟(c)中加熱黏接薄膜時逸出至黏接薄膜外之逸氣的產生，因此可實現防止由逸氣所致之被黏附體的污染以及提高黏接薄膜與被黏附體之密接性。
構成本發明之黏接薄膜之樹脂組成物可含有硬化促進劑。硬化促進劑只要促進環氧樹脂與硬化劑之硬化反應則可適當選擇使用。具體可舉出：咪唑類、1,8-二氮雜雙環(5,4,0)十一烯等胺系觸媒，三苯基膦或四取代鏻與多官能酚化合物之分子化合物等磷化合物。該等之中，較佳為兼具黏接薄膜之快速硬化性與半導體元件上之鋁墊腐蝕性之磷化合物。
至於硬化促進劑之含量，係相對於環氧樹脂與硬化劑之合計100質量份，較佳為0.01～10質量份，特佳為0.1～5質量份。藉由設定為上述範圍，可保持黏接薄膜之快速硬化性以及保存性、硬化後之物性的平衡。
磷化合物中，特佳為黏接薄膜之快速硬化性、對半導體元件上之鋁墊之腐蝕性、進而黏接薄膜之保存性更為優異的四取代鏻與多官能酚化合物之分子化合物。
四取代鏻與多官能酚化合物之分子化合物並非簡單之混合物，而是具有鹽構造、超分子構造等構造之化合物。
至於四取代鏻與多官能酚化合物之分子化合物之四取代鏻，由黏接薄膜之硬化性與保存性之平衡而言，較佳為4個烷基或芳香族化合物配位於磷原子上之化合物。
四取代鏻之取代基並無特別限定，可相互相同亦可不同，具有經取代或未經取代之芳基或烷基作為取代基的四取代鏻離子對於熱或水解較為穩定，故較佳。具體而言，作為四取代鏻，可例示：四苯基鏻、四甲苯基鏻、四乙基苯基鏻、四甲氧基苯基鏻、四萘基鏻、四苄基鏻、乙基三苯基鏻、正丁基三苯基鏻、2-羥基乙基三苯基鏻、三甲基苯基鏻、甲基二乙基苯基鏻、甲基二烯丙基苯基鏻、四正丁基鏻等，該等之中，由黏接薄膜之快速硬化性與保存性之平衡而言，較佳為四苯基鏻。
所謂四取代鏻與多官能酚化合物之分子化合物的多官能酚化合物，係指具有酚性羥基且至少其1個羥基上之氫脫離而形成苯氧化物型化合物者，具體可舉出：羥基苯化合物、聯苯酚化合物、雙酚化合物、羥基萘化合物、苯酚酚醛清漆樹脂、苯酚芳烷樹脂等。
作為多官能酚化合物，例如可舉出：雙(4-羥基-3，5-二甲基苯基)甲烷(通稱四甲基雙酚F)、4,4'-磺醯基二苯酚、及4,4'-異亞丙基二苯酚(通稱雙酚A)、雙(4-羥基苯基)甲烷、雙(2-羥基苯基)甲烷、(2-羥基苯基)(4-羥基苯基)甲烷以及該等之中雙(4-羥基苯基)甲烷、雙(2-羥基苯基)甲烷、(2-羥基苯基)(4-羥基苯基)甲烷三種之混合物(例如本州化學工業股份有限公司製造、雙酚F-D)等雙酚類，1,2-苯二醇、1,3-苯二醇、1,4-苯二醇等二羥基苯類，1,2,4-苯三醇等三羥基苯類，1,6-二羥基萘等二羥基萘類之各種異構物，2,2'-聯苯酚、4,4'-聯苯酚等聯苯酚類之各種異構物等化合物，較佳為快速硬化性與保存性之平衡優異的1,2-二羥基萘、4,4'-磺醯基二苯酚。
構成本發明之黏接薄膜之樹脂組成物亦可含有偶合劑。藉此，可進一步提高黏接薄膜之密接性以及黏接薄膜中之樹脂成分與填充材料之界面的密接性。
作為偶合劑，可舉出矽烷系、鈦系、鋁系等，該等之中，較佳為黏接薄膜之保存性以及黏接薄膜與被黏附體之密接性優異的矽烷系偶合劑。
作為矽烷偶合劑，例如可舉出：乙烯基三氯矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、γ-甲基丙烯醯氧基丙基三乙氧基矽烷、N-β(胺基乙基)γ-胺基丙基甲基二甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基三乙氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷、γ-氯丙基三甲氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-異氰酸酯基丙基三乙氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷等。
偶合劑之調配量，係相對於丙烯酸系樹脂100質量份，較佳為0.01質量份以上、10質量份以下，特佳為0.1質量份以上、5質量份以下。藉由設定為上述範圍，可兼具黏接薄膜與被黏附體之密接性以及逸氣或空隙之抑制效果。
又，構成黏接薄膜之樹脂組成物亦可含有無機填充材料。藉此可賦予以下功能：於藉由切割使晶圓單片化後，使附有黏接薄膜之半導體元件自切割膠帶之剝離性提高，由此使拾取性提高；以及降低硬化後之線膨脹係數。
作為無機填充材料，例如可舉出：銀、氧化鈦、二氧化矽、雲母等，該等之中較佳為二氧化矽。藉由使用二氧化矽填料，可於藉由切割使晶圓單片化後，使附有黏接薄膜之半導體元件自切割膠帶之剝離性提高，由此使拾取性進一步提高。又，作為二氧化矽填料之形狀，有破碎二氧化矽及球狀二氧化矽，較佳為球狀二氧化矽。
無機填充材料之平均粒徑並無特別限定，較佳為0.01μm以上、20μm以下，特佳為0.1μm以上、5μm以下。藉由設定為上述範圍，可抑制黏接薄膜內填料之凝聚，提高外觀，進而可抑制於熱壓合時破壞晶片。
無機填充材料之含量並無特別限定，相對於除(F)無機填充材料以外之樹脂成分100質量份，較佳為1質量份以上、200質量份以下，特佳為5質量份以上、100質量份以下。藉由設定為上述範圍，可使硬化後黏接薄膜與被黏接物之間的線膨脹係數差變小，降低熱衝擊時所產生之應力，因此可更確實地抑制被黏接物之剝離。進而，可抑制硬化後黏接薄膜之彈性率變得過高，因此半導體裝置之可靠性上升。
再者，構成本發明之黏接薄膜之樹脂組成物亦可含有上述成分以外之成分。
本發明之黏接薄膜之厚度並無特別限定，較佳為3～100μm，特佳為5～70μm。藉由使厚度為上述範圍內，可容易地實施厚度精度之控制。
繼而，對本發明之半導體裝置之製造方法中所用的黏接薄膜之製造方法進行說明。
本發明之黏接薄膜例如可藉由以下方式獲得：將上述樹脂組成物溶解於甲基乙基酮、丙酮、甲苯、二甲基甲醛等溶劑中，製成清漆狀態後，使用刮刀式塗佈機、模塗機、凹板印刷塗佈機等塗佈於脫模片上，藉由進行乾燥而使溶劑揮散，然後除去脫模片。
本發明之半導體裝置之製造方法中所用的黏接薄膜係例如亦可與切割薄膜接合而用作附有切割膠帶之黏接薄膜。
[實施例]
以下，依據實施例及比較例對本發明進行詳細說明，但本發明並不限定於其等。
(實施例1) (黏接薄膜用樹脂清漆之製備)
將以下成分溶解於甲基乙基酮(MEK)中而獲得樹脂固形份為41%之樹脂清漆，所述成分係：作為(甲基)丙烯酸系樹脂之丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸-甲基丙烯酸羥基乙酯共聚物、長瀨化成公司製造、SG-708-6、Tg：6℃、重量平均分子量：800,000)100質量份；作為環氧樹脂之EOCN-1020-80(鄰甲酚酚醛清漆型環氧樹脂、環氧當量200g/eq、軟化點80℃、日本化藥公司製造)105質量份及NC3000P(芳烷型環氧樹脂、環氧當量272g/eq、軟化點58℃、日本化藥公司製造)157質量份；作為硬化劑之液狀酚化合物MEH-8000H(羥基當量141g/OH基、明和化成股份有限公司製造)82質量份及固形酚樹脂PR-HF-3(羥基當量104g/OH基、SUMITOMO BAKELITE公司製造)55質量份；作為硬化促進劑的以式(1)表示之四取代鏻與多官能酚化合物之分子化合物0.8質量份；
[化1]
作為偶合劑之γ-環氧丙氧基丙基三甲氧基矽烷(KBM403E、信越化學工業公司製造)0.5質量份；以及作為無機填充材料之球狀二氧化矽(SE2050、平均粒徑0.5μm、Admatechs公司製造)56質量份。
(附有脫模片之黏接薄膜之製造)
使用刮刀式塗佈機將藉由上述方法而得之樹脂清漆塗佈於屬於脫模片的聚對苯二甲酸乙二酯薄膜(三菱化學聚酯薄膜(Mitsubishi Chemical Polyester Film)公司製造、型號MRX50、厚度50μm)上後，於100℃乾燥5分鐘，進而於150℃乾燥2分鐘，獲得厚度為30μm之黏接薄膜。使用流變計以10℃/分鐘之升溫速度對所得黏接薄膜施加頻率為1Hz之剪切而測定時，於100℃、125℃、150℃之熔融黏度分別為300Pa‧s、280Pa‧s、260Pa‧s。
(切割片之製造)
作為切割片基材薄膜，係使用擠出機使包含Hybrar 60質量份、聚丙烯40質量份之Cleartec CT-H717(Kuraray製造)形成厚度為100μm之基材薄膜，並對表面進行電暈處理。繼而，於經剝離處理之厚度為38μm之聚酯薄膜上，以乾燥後之厚度為10μm之方式塗佈使丙烯酸2-乙基己酯50質量份與丙烯酸丁酯10質量份、乙酸乙烯酯37質量份、甲基丙烯酸2-羥基乙酯3質量份進行共聚合而得的重量平均分子量為500000之共聚物，於80℃下乾燥5分鐘，獲得黏著劑層。然後於基材薄膜之電暈處理面上層壓黏著劑層而獲得切割片。
(附有切割片之黏接薄膜之製造)
於上述切割片上以大於半導體晶圓、小於晶圓環之內徑的尺寸貼附黏接薄膜，而獲得依序積層基材薄膜、黏著劑層、黏接薄膜而成之附有切割膠帶之黏接薄膜。
(半導體裝置之製造)
按以下順序製造半導體裝置。
作為半導體裝置之基板，準備以阻焊劑(太陽油墨股份有限公司製造、AUS308)被覆之以雙順丁烯二醯亞胺-三作為主劑之模擬有機基板(電路階差為5～10μm)。再者，於模擬有機基板之單面的未塗佈阻焊劑之部分對銅箔、鍍鎳及鍍金依序進行圖案處理而形成打線接合用端子，藉由設置於模擬有機基板之相反之面的焊球搭載用區域以及通孔而導通。
於40℃將附有切割膠帶之黏接薄膜貼附於形成有半導體元件之8吋200μm晶圓上，獲得帶有附有切割膠帶之黏接薄膜的晶圓。
然後使用切割機，以轉軸轉速30,000rpm、切斷速度50mm/sec而將該晶圓切割(切斷)成10.5mm×10.5mm見方之各半導體元件的尺寸。繼而，自附有切割膠帶之黏接薄膜之背面向上頂，於基材薄膜及黏著劑層間進行剝離而獲得附有黏接薄膜之半導體元件。
使用黏晶機(ASM公司製造、AD898)以130℃、10N、2sec之條件於模擬有機基板上熱壓合上述附有黏接薄膜之半導體元件，繼而將由附有黏接薄膜之半導體元件與模擬有機基板所構成的半導體零件設置於壓力容器內，使用加壓空氣以130℃、0.5MPa、60分鐘之條件進行加壓固化。繼而藉由打線接合裝置(ASM公司製造、Eagle60)進行半導體元件之晶片座部與基板之打線接合用端子的打線接合。進而使用密封樹脂EME-G790(SUMITOMO BAKELITE股份有限公司製造)進行密封成形後，於後固化175℃進行2小時熱處理，而進行密封樹脂及黏接薄膜之硬化，而獲得合計10個半導體裝置。再者，關於藉由示差掃描熱量測定而另外測定的(i)熱壓合後、(ii)加壓固化後、(iii)打線接合後、以及(iv)密封成形及後固化後之黏接薄膜之硬化度，若將熱壓合前之黏接薄膜之硬化度設為0%時，分別為(i)0%、(ii)45%、(iii)50%、以及(iv)100%。
(比較例1)
除了不進行加壓固化步驟外，以與實施例1相同之方式獲得半導體裝置。再者，關於藉由示差掃描熱量測定而另外測定的(i)熱壓合後、(iii)打線接合後、以及(iv)密封成形及後固化後之黏接薄膜之硬化度，若將熱壓合前之黏接薄膜之硬化度設為0%時，分別為(i)0%、(iii)5%、以及(iv)100%。
(比較例2)
以130℃、60分鐘之條件進行加熱處理以代替進行加壓固化步驟，除此以外，以與實施例1相同之方式獲得半導體裝置。再者，關於藉由示差掃描熱量測定而另外測定的(i)熱壓合後、(ii)加熱處理後、(iii)打線接合後、以及(iv)密封成形及後固化後之黏接薄膜之硬化度，若將熱壓合前之黏接薄膜之硬化度設為0%時，分別為(i)0%、(ii)45%、(iii)50%、以及(iv)100%。
關於各實施例及比較例中所得之半導體用黏接薄膜及半導體裝置，進行以下評價。將評價項目與內容一併示出。將所得結果示於表1中。
1.低溫貼附性
關於低溫貼附性，係以溫度40℃、壓力0.3MPa、層壓速度10mm/sec之條件將各實施例及比較例中所得之黏接薄膜貼附於厚度為550μm之晶圓背面，並評價180°剝離強度。
180°剝離強度係藉由使用萬能拉力測試機(ORIENTEC股份有限公司製造之RTC-1250A)，以剝離速度50mm/min、剝離寬度25mm向180°方向剝離而測定。
◎：剝離強度為200N/m以上。
○：剝離強度為100N/m以上、未達200N/m。
△：剝離強度為50N/m以上、未達100N/m。
×：剝離強度未達50N/m。
2.黏接薄膜之伸出
關於黏接薄膜之伸出，係藉由SEM(scanning electron microscope，掃描電子顯微鏡)觀察各實施例、比較例中所製造之半導體裝置中於打線接合後黏接薄膜是否自半導體元件之側面伸出。各符號如下。
◎：自側面伸出之長度未達20μm。
○：自側面伸出之長度為20μm以上、未達50μm。
△：自側面伸出之長度為50μm以上、未達100μm。
×：自側面伸出之長度為100μm以上。
3.密封成形前之空隙、間隙之有無
關於密封成形前之空隙、間隙之有無，係藉由掃描式超音波探傷機(SAT，Scanning Acoustic Tomography)對各實施例及比較例中所得之樹脂密封前之半導體裝置進行評價。各符號如下。
◎：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為0個
○：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為1個以上、3個以下
△：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為4個以上、9個以下
×：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為10個
再者，於實施例1中，所有半導體裝置中均未殘留10μm以上之空隙或間隙。
4.密封成形＋後固化後之空隙、間隙之有無
關於密封成形及後固化後之空隙、間隙之有無，係對各實施例、比較例中所製造之半導體裝置於密封後藉由掃描式超音波探傷機(SAT)進行評價。各符號如下。
◎：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為0個
○：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為1個以上、3個以下
△：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為4個以上、9個以下
×：殘留有30μm以上之空隙或間隙的半導體裝置於10個中為10個
再者，於實施例1中，所有半導體裝置中均未殘留10μm以上之空隙或間隙。
5.耐龜裂性
關於耐龜裂性，係以85℃/60%RH/168小時之條件對各實施例及比較例中所得之半導體裝置進行吸濕處理後，進行3次260℃之紅外線(IR，infrared)回焊並利用掃描式超音波探傷機(SAT)觀察評價因回焊而產生之龜裂。各符號如下。
◎：產生龜裂之半導體裝置於10個中為0個
○：產生龜裂之半導體裝置於10個中為1個以上、3個以下
△：產生龜裂之半導體裝置於10個中為4個以上、9個以下
×：產生龜裂之半導體裝置於10個中為10個
由表1表明，於成為本發明之半導體裝置之製造方法的實施例1中，可獲得以下之良好結果：超過30μm之黏接薄膜內部之空隙、以及黏接薄膜與半導體元件之界面及黏接薄膜與基板之界面的間隙不存在，亦無黏接劑之伸出。又，可獲得以下之良好結果：半導體裝置即便實施吸濕後之耐回焊處理亦不會由此而產生龜裂或剝離。
另一方面，於不進行加壓固化步驟之比較例1及2中，結果係產生了超過30μm之黏接薄膜內部之空隙、以及黏接薄膜與半導體元件之界面及黏接薄膜與基板之界面的間隙。因此，結果會由於半導體裝置之吸濕後之耐回焊處理而產生龜裂或剝離。
本申請案係主張以日本專利申請特願2008-267030及日本專利特願2009-105605為基礎之優先權，此處引用其所揭示之全部內容。
1、11、21．．．半導體元件
2、12、22．．．黏接薄膜
3．．．黏著劑層
4．．．基材薄膜
5．．．切割膠帶
6．．．晶圓環
7．．．附有黏接薄膜之半導體元件
13、23．．．基板
14．．．間隙
15．．．半導體零件
16．．．壓力容器
17．．．加壓流體注入口
18．．．覆蓋薄膜
19．．．袋狀薄膜
24．．．接線
31．．．密封材料
圖1(a1)至(a3)係對準備附有黏接薄膜之半導體元件之步驟之一例加以說明的剖面圖。
圖2係對熱壓合後之狀態之一例加以說明的剖面圖。
圖3係對加壓固化後之狀態之一例加以說明的剖面圖。
圖4(a)至(c)係對於壓力容器內設置附有黏接薄膜之半導體元件與支持構件之狀態之一例加以說明的剖面圖。
圖5係對打線接合後之狀態之一例加以說明的剖面圖。
圖6係對密封成形後之狀態之一例加以說明的剖面圖。
11．．．半導體元件
12．．．黏接薄膜
13．．．基板
15．．．半導體零件
16．．．壓力容器
17．．．加壓流體注入口
18．．．覆蓋薄膜
19．．．袋狀薄膜

Claims (11)

  1. 一種半導體裝置之製造方法，其係經由黏接薄膜之硬化物將半導體元件與支持構件黏接者，其特徵在於，依下述步驟(a)～(d)之順序進行：(a)準備附有黏接薄膜之半導體元件之步驟；(b)將上述附有黏接薄膜之半導體元件熱壓合於上述支持構件，獲得具有上述附有黏接薄膜之半導體元件與上述支持構件的半導體零件之熱壓合步驟；(c)使用加壓流體對具有上述附有黏接薄膜之半導體元件與上述支持構件的上述半導體零件進行加熱、加壓，進行黏接薄膜之硬化的加壓固化步驟；以及(d)將上述附有黏接薄膜之半導體元件與上述支持構件加以電性連接之步驟。
  2. 如申請專利範圍第1項之半導體裝置之製造方法，其中，進行上述步驟(a)之前的上述黏接薄膜於100℃～150℃之熔融黏度為10Pa‧s以上、1000Pa‧s以下。
  3. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，上述加壓流體為加壓氣體。
  4. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，上述加壓流體為加壓空氣。
  5. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，上述加壓固化步驟(c)係使用壓力容器，於該壓力容器內設置具有上述附有黏接薄膜之半導體元件與上述支持構件的上述半導體零件，藉由上述加壓流體進行加熱、加壓。
  6. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，上述加壓固化步驟(c)中之加熱、加壓條件係加熱溫度為80℃以上、180℃以下，加壓力為0.1MPa以上、10MPa以下，加壓時間為1分鐘以上、480分鐘以下。
  7. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，上述黏接薄膜含有(甲基)丙烯酸系樹脂，上述(甲基)丙烯酸系樹脂相對於樹脂總體之含量為10%以上、50%以下。
  8. 如申請專利範圍第7項之半導體裝置之製造方法，其中，上述黏接薄膜進一步含有熱硬化性樹脂，上述(甲基)丙烯酸系樹脂相對於上述熱硬化性樹脂100重量份之含量為10重量份以上、100重量份以下。
  9. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，藉由上述加壓固化步驟(c)減少空隙及間隙；經上述加壓固化步驟(c)後，於上述黏接薄膜內部不存在直徑為30μm以上之空隙。
  10. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，上述步驟(a)係按下述(a1)～(a3)之順序進行：(a1)以成為晶圓、黏接薄膜、切割膠帶之順序的方式於上述晶圓之背面層壓附有切割膠帶之黏接薄膜之步驟；(a2)對上述晶圓與所層壓的上述附有切割膠帶之黏接薄膜進行一體切割之步驟；以及(a3)將上述切割膠帶剝離，形成附有黏接薄膜之半導體元件之步驟。
  11. 一種半導體裝置，其係藉由申請專利範圍第1或2項之半導體裝置之製造方法而製造者。
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KR102428193B1 (ko) * 2019-07-03 2022-08-02 주식회사 엘지화학 점착 필름, 이의 제조 방법 및 이를 포함하는 플라스틱 유기 발광 디스플레이
KR102428192B1 (ko) * 2019-07-03 2022-08-02 주식회사 엘지화학 점착 필름, 이의 제조 방법 및 이를 포함하는 플라스틱 유기 발광 디스플레이
KR102428191B1 (ko) * 2019-07-03 2022-08-02 주식회사 엘지화학 점착 필름, 이의 제조 방법 및 이를 포함하는 플라스틱 유기 발광 디스플레이
KR102428188B1 (ko) * 2019-07-03 2022-08-01 주식회사 엘지화학 점착 필름, 이의 제조 방법 및 이를 포함하는 플라스틱 유기 발광 디스플레이
KR102428179B1 (ko) * 2019-07-03 2022-08-02 주식회사 엘지화학 점착 필름, 이의 제조 방법 및 이를 포함하는 플라스틱 유기 발광 디스플레이
JP2021015823A (ja) * 2019-07-10 2021-02-12 株式会社ディスコ ウェーハの加工方法
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