CN101627465A - 用于半导体的粘合膜和使用该粘合膜的半导体器件 - Google Patents

用于半导体的粘合膜和使用该粘合膜的半导体器件 Download PDF

Info

Publication number
CN101627465A
CN101627465A CN200880006547A CN200880006547A CN101627465A CN 101627465 A CN101627465 A CN 101627465A CN 200880006547 A CN200880006547 A CN 200880006547A CN 200880006547 A CN200880006547 A CN 200880006547A CN 101627465 A CN101627465 A CN 101627465A
Authority
CN
China
Prior art keywords
bonding film
semi
conductive bonding
semiconductor chip
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200880006547A
Other languages
English (en)
Other versions
CN101627465B (zh
Inventor
安田浩幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of CN101627465A publication Critical patent/CN101627465A/zh
Application granted granted Critical
Publication of CN101627465B publication Critical patent/CN101627465B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2461/00—Presence of condensation polymers of aldehydes or ketones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0101—Neon [Ne]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01059—Praseodymium [Pr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Abstract

本发明提供了用于半导体的粘合膜，其包括(A)(甲基)丙烯酸酯共聚物和(B)不同于(甲基)丙烯酸酯共聚物的热塑性树脂。利用直径为20mm的平行板在175℃的温度下向用于半导体的粘合膜施予频率为1Hz的3000Pa剪应力后产生剪应变γ，所述用于半导体的粘合膜在开始测量剪应变γ后10min－2hr时期内满足下式(1)。根据本发明，即使由于半导体器件中半导体芯片多层层积导致引线接合工艺中较长的受热史，在密封材料的封止工序中，本发明用于半导体的粘合膜也能提高基板表面凹凸的填充性能。0.10≤γ≤0.30 (1)

Description

用于半导体的粘合膜和使用该粘合膜的半导体器件
技术领域
[0001]
本发明涉及粘合膜和包含所述粘合膜的半导体器件，更特别涉及用于接合半导体芯片的粘合膜。
背景技术
[0002]
近年，电子设备的高性能化提高了对半导体器件的高密度化和高集成化的要求，由此促进半导体封装件在容量和密度方面的提高。
[0003]
目前正进行多种研究以满足此需求，例如对将一个半导体芯片层积在另一个半导体芯片的多层结构的技术进行研究，从而降低半导体封装件的尺寸和厚度，提高半导体封装件的容量。此封装件主要采用有机基板，例如双马来酰亚胺三嗪基板或聚酰亚胺基板(专利文献1)。
[0004]
根据专利文献1，半导体封装件主要利用膜状粘合剂来接合半导体芯片和有机基板或者使半导体芯片彼此接合，原因是难以使用适量的常规膏状粘合剂而使粘合剂不从半导体芯片挤出。
[0005]
另外，专利文献2-4公开了与膜状粘合剂有关的常规技术。
[0006]
专利文献2中教导了使用由环氧树脂和丙烯酸橡胶构成的粘合膜接合半导体芯片和配线基板(interconnect substrate)。
[0007]
专利文献3教导了使用主要由苯氧树脂构成的粘合膜接合半导体芯片和配线基板。
[0008]
专利文献4教导了将粘合带在接合温度下的最小粘度调节在特定范围内，从而控制流动性。
[0009]
专利文献1：JP-A No.2006-73982
专利文献2：JP-A No.2001-220571
专利文献3：JP-A No.2002-138270
专利文献4：JP-A No.H11-12545
[0010]
然而，上述文献的常规技术在以下方面仍然具有可改进的空间。
在接合配线基板和半导体芯片的情况下，由于金属配线位于配线基板的表面，并且该表面覆盖有阻焊剂，从而使存在金属配线的区域和没有金属配线的区域在配线基板的表面形成凹凸。传统的用于半导体的粘合膜在接合半导体芯片和配线基板后并不总是能够适当地填充所述凹凸，并且可能在配线基板和半导体芯片之间留下间隙(void)，该间隙会降低半导体封装件的可靠性。
[0011]
通过利用用于半导体的粘合膜接合半导体芯片和配线基板，在半导体芯片和配线基板之间进行引线接合(wire bonding)，并在使用密封材料的封止工艺中施加热和压力，使用于半导体的粘合膜能够填充配线基板表面的凹凸，因此，用于半导体的粘合膜在密封工艺中的流动性至关重要。
[0012]
另外，目前半导体芯片以多层形式进行层积，由此需要更长时间进行引线接合，从而延长了用于半导体的粘合膜在利用密封材料封止前经历的受热史。因此，用于半导体的粘合膜在利用密封材料封止前即被固化并丧失流动性，从而导致配线基板的表面不能被适当填充这一缺陷。
发明内容
本发明要解决的问题
[0013]
本发明的目的是提供在半导体器件(其为包括多层层积的半导体芯片并需要较长时间进行引线接合的半导体器件)内的用于半导体的粘合膜，其在用密封材料进行封止的工艺中对于基板的凹凸表面具有优异的填充性(尽管该用于半导体的粘合膜在用密封材料进行封止前需要经历较长的受热史)，还提供使用该粘合膜的半导体器件。
解决问题的方式
[0014]
[1]用于半导体的粘合膜，其用于层积两层或更多层半导体芯片，其包含：(A)(甲基)丙烯酸酯共聚物，和(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂；所述用于半导体的粘合膜的构成使其在开始测量后的10分钟起满足下式(1)达2个小时，
0.10≤γ≤0.30    (1)
其中，γ表示在直径为20mm的平行板上，于175℃的温度和1Hz的频率经受3000Pa的剪应力后产生的剪应变的量。
[2]如上述[1]所述的用于半导体的粘合膜，其基本不含热固性树脂。
[3]如上述[1]或[2]所述的用于半导体的粘合膜，其中，(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂为苯氧树脂。
[4]如上述[1]至[3]中任一项所述的用于半导体的粘合膜，其中，(A)(甲基)丙烯酸酯共聚物包含具有羧基基团的单体单元。
[5]如上述[1]至[4]中任一项所述的用于半导体的粘合膜，其中，相对于100重量份的(A)(甲基)丙烯酸酯共聚物，(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂的添加量为0.5重量份-30重量份。
[6]如上述[1]至[5]中任一项所述的用于半导体的粘合膜，其进一步包含(C)无机填料。
[7]如上述[6]所述的用于半导体的粘合膜，其中，所述(C)无机填料为石英(silica)。
[8]如上述[6]或[7]所述的用于半导体的粘合膜，其中，相对于100重量份的除(C)无机填料以外的树脂组合物，(C)无机填料的添加量为5重量份-100重量份。
[9]如上述[1]至[8]中任一项所述的用于半导体的粘合膜，其还包含(D)偶联剂。
[10]如上述[9]所述的用于半导体的粘合膜，其中，相对于100重量份的树脂组合物，(D)偶联剂的添加量为0.01重量份-10重量份。
[11]如上述[1]至[10]中任一项所述的用于半导体的粘合膜，其被配置，以作为切割板(dicing sheet)使用。
[12]半导体器件，其包含利用上述[1]至[11]中任一项所述的用于半导体的粘合膜两层或多层层积的半导体芯片。
发明的优点
[0015]
本发明的目的是提供在包括多层层积的半导体芯片的半导体器件(需要较长时间进行引线接合的半导体器件)内的用于半导体的粘合膜，其在用密封材料进行封止的工艺中对于基板的凹凸表面具有优异的填充性(尽管该用于半导体的粘合膜在用密封材料进行封止前需要经历较长的受热史)，还提供使用该粘合膜的半导体器件。
附图说明
[0016]
图1为显示本发明的用于半导体的粘合膜的剪应变的量与时间之间的关系的示意图。
图2为显示本发明实施方案的半导体器件的结构的剖面图。
图3为显示本发明实施方案的半导体器件的制造工艺的流程图。
图4为显示本发明另一个实施方案的半导体器件的结构的剖面图。
本发明的最佳实施方案
[0017]
以下对本发明用于半导体的粘合膜进行阐述。
本发明的用于半导体的粘合膜的构成使其在开始测量后的10分钟起满足下式(1)达2个小时，
0.10≤γ≤0.30    (1)
其中，γ表示在利用直径为20mm的平行板上于175℃的温度和1Hz的频率下经受3000Pa的剪应力后产生的剪应变的量。
[0018]
含有利用常规的用于半导体的热固型粘合膜所层积的两层或多层半导体芯片的半导体器件在可靠性方面存在问题，例如在粘合界面容易出现裂纹。这是由于半导体芯片和配线基板之间的界面区域存在间隙，且此类问题更多地是在包含两层或多层层积的半导体芯片的半导体器件中观察到。对于包含两层或多层层积的半导体芯片的半导体器件，必须进行两次或多次引线接合工艺从而使半导体芯片和配线基板电连接，其与仅有单层半导体芯片的情况相比，必然需要较长时间。
[0019]
通常在150℃-175℃的温度下进行引线接合工艺，并且由于此受热史而使用于半导体的热固型粘合膜发生固化反应。因此，由于与上述包含单层半导体芯片的半导体器件相比，包含两层或多层层积的半导体芯片的半导体器件在引线接合工艺中经历的受热史较长，在引线接合工艺中用于半导体的热固型粘合膜发生固化反应，并由此降低使用密封材料的封止工艺中粘合膜的流动性。由此可以解释在密封工艺中不能适当地填充配线基板的表面凹凸，并因此产生降低半导体器件可靠性的间隙。
[0020]
本发明人认为在密封工艺中不能适当地填充配线基板的表面凹凸的原因是引线接合工艺中的受热史促使用于半导体的粘合膜发生固化反应，该固化反应降低了从密封工艺中施加的荷重这方面而言的剪应变γ的量，本发明人研究了在175℃下热处理2小时后常规的用于半导体的热固型树脂的剪应变γ的量，由此得到的结果是γ约为0.06。
[0021]
本发明发现，通过在175℃下10分钟-2小时的过程(这是包含两层或多层层积的半导体芯片的半导体器件在密封工艺中经历的正常受热史)中将用于半导体的粘合膜的剪应变γ的量调节为0.10≤γ≤0.30(该剪应变γ的量明显高于常规值)，可以在密封工艺中利用用于半导体的粘合膜更适当地填充配线基板的表面凹凸，从而提高半导体器件的可靠性。
[0022]
可以利用，例如流变仪(一种粘弹性测量装置)，通过在直径为20mm的平行板上于175℃的恒温下，向切割尺寸为25mm×25mm、层积厚度为100μm的用于半导体的粘合膜样品施予1Hz频率下的3000Pa剪应力，来测量本发明所指的剪应变γ的量。
[0023]
图1显示测量开始后的时间(t)与本发明用于半导体的粘合膜在175℃恒温下施予剪应力后测量的剪应变的量(γ)之间的关系。从图1可以看出，在如虚线所示的T1(从开始测量后10分钟，γ1′)至T2(其后两小时，γ2′)期间，常规的用于半导体的热固型粘合膜在受热史中剪应变的量的波动较大。与之不同，本发明的用于半导体的粘合膜明显具有如下特征：在如实线所示的T1(从开始测量后10分钟，γ1′)至T2(其后两小时，γ2′)期间，本发明的用于半导体的粘合膜在受热史中剪应变的量的波动较小。
[0024]
从开始测量后10分钟至其后2小时，本发明用于半导体的粘合膜的剪应变的量(γ)被指定为0.10≤γ≤0.30，更优选的范围为0.12-0.25，进一步优选的范围是0.15-0.20。将剪应变调节在上述范围内可保证用于半导体的粘合膜在密封工艺中具有预期的流动性，并防止可能由封止压力引起的半导体芯片发生的移位。
[0025]
根据本发明，用于半导体的粘合膜的树脂组合物包含(A)(甲基)丙烯酸酯共聚物和(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂，从而可将剪应变γ的量设定在预定范围内。
[0026]
更具体地，适当地调节(A)(甲基)丙烯酸酯共聚物的量，并选择(B)除(甲基)丙烯酸酯共聚物酯以外的热塑性树脂的类型和混合比例，从而能够将剪应变的量γ设定在预定范围内，其中，(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂的热时弹性模量(thermal time elasticmodulus)和流动性高于(A)(甲基)丙烯酸酯共聚物。
[0027]
首先，对用于半导体的粘合膜的树脂组合物进行说明。各组分可以是单个化合物或者多个化合物的组合。
[0028]
优选本发明的(A)(甲基)丙烯酸酯共聚物为由(甲基)丙烯酸酯单体和另一种单体构成的共聚物，且更优选(A)(甲基)丙烯酸酯共聚物包含具有环氧基、羟基、羧基或腈基等基团的化合物。此组合物可以提高与诸如半导体芯片等待接合物的粘合性能。
[0029]
(甲基)丙烯酸酯单体的实例包括：丙烯酸酯，例如丙烯酸甲酯或丙烯酸乙酯；甲基丙烯酸酯，例如甲基丙烯酸甲酯或甲基丙烯酸乙酯；具有缩水甘油醚基团的缩水甘油基甲基丙烯酸酯；具有羟基基团的羟基甲基丙烯酸酯(hydroxy methacrylate)或甲基丙烯酸2-羟乙酯；具有羧基基团的丙烯酸酯或甲基丙烯酸酯；具有酰胺基团的N，N-二甲基丙烯酰胺；和具有腈基基团的丙烯腈。
[0030]
在以上实例中，优选使用所包含的单体单元具有羧基基团的(甲基)丙烯酸酯共聚物。此组合物可以提高与构成半导体芯片界面的硅的粘合性能，从而提高半导体封装件的可靠性。
[0031]
从获得具有高玻璃转化温度的固化产物方面考虑，具有羧基基团的化合物的含量可以为(A)(甲基)丙烯酸酯共聚物整体的0.5mol％或更多，更优选为1mol％或更多。另一方面，从提高粘合膜的保存性方面考虑，具有羧基基团的化合物的含量可以为(A)(甲基)丙烯酸酯共聚物整体的10mol％或更少，更优选为5mol％或更少。
[0032]
在所述树脂组合物中混合(A)(甲基)丙烯酸酯共聚物可以提高初始粘合性，原因是玻璃转化温度低。
[0033]
在本文中，“初始粘合性”表示在用用于半导体的粘合膜接合半导体芯片和支撑基材(supporting base material)后的初始阶段的粘合性能，换言之，即为用于半导体的粘合膜固化前的粘合性能。
[0034]
从所述粘合膜的成膜性方面考虑，优选(A)(甲基)丙烯酸酯共聚物的重均分子量为，例如100,000或更高，更优选为200,000或更高。另一方面，从确保用于制备所述粘合膜的树脂溶液具有合适的粘度以及在密封工艺中所述用于半导体的粘合膜具有足够的流动性方面考虑，优选(A)(甲基)丙烯酸酯共聚物的重均分子量为，例如2,000,000或更低，更优选为1,000,000或更低。
[0035]
从防止所述粘合膜具有过高粘合性从而提高工作效率方面考虑，优选(A)(甲基)丙烯酸酯共聚物的玻璃转化温度为，例如0℃或更高，更优选为5℃或更高。另一方面，从提高低温下的粘合性方面考虑，优选(A)(甲基)丙烯酸酯共聚物的玻璃转化温度为，例如30℃或更低，更优选为20℃或更低。
[0036]
本发明的(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂可以在热压接合半导体芯片后立即提高用于半导体的粘合膜的热时弹性模量，从而促进半导体芯片(通过用于半导体的粘合膜固定)在密封工艺中能耐受封止压力，并确保密封工艺中用于半导体的粘合膜具有充足的流动性。
[0037]
(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂的具体实例包括苯氧树脂、丁腈橡胶、丁缩醛树脂、聚酰胺树脂和聚酰亚胺树脂，其中可以使用上述树脂中的一种或两种或多种的组合。
[0038]
在上述实例中，适合使用的是苯氧树脂，原因是除了上述优点外，还在于其与丙烯酸酯共聚物的高相溶性，这样可以形成外观良好的膜并可以提高与有机基板的粘合性能。
[0039]
在本发明的用于半导体的粘合膜的树脂组合物中，相对于100重量份的(A)(甲基)丙烯酸酯共聚物，(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂的混入比例优选为0.5重量份-30重量份，更优选为3重量份-20重量份。此组合物可以确保所述用于半导体的粘合膜具有优良的外观，且其在密封工艺中具有足够的流动性。
[0040]
本发明的用于半导体的粘合膜优选由基本不含热固性树脂的树脂构成。基本不含热固性树脂的树脂组合物具体是指相对于树脂组合物整体而言，所含的热固性树脂的比例不超过3wt％。所述用于半导体的粘合膜可包含环氧树脂，从而提高与配线基板的粘合性能并增强用于半导体的粘合膜的耐热性，从而提高半导体器件的可靠性，前提是环氧树脂的含量不超过3wt％，优选为2wt％或更少，更优选为1wt％或更少。具有上述含量的热固性树脂可防止在密封工艺中用于半导体的粘合膜的流动性的降低，因为引线接合工艺中的受热史导致热固性树脂发生的固化反应几乎不会影响粘合膜的性能。
[0041]
热固性树脂的实例包括酚醛清漆型酚醛树脂(novolac type phenolresin)，例如苯酚酚醛清漆树脂(phenol novolac resin)、甲酚酚醛清漆树脂(cresol novolac resin)或双酚A酚醛清漆树脂；甲阶酚醛树脂(resole phenolresin)，例如未改性的甲阶酚醛树脂或用桐油改性的甲阶酚醛树脂；双酚环氧树脂，例如双酚A环氧树脂或双酚F环氧树脂；酚醛清漆型环氧树脂，例如苯酚酚醛清漆型环氧树脂或甲酚酚醛清漆型环氧树脂；环氧树脂，例如联苯环氧树脂、对苯二酚环氧树脂、芪环氧树脂、三酚甲烷环氧树脂、含三嗪核的环氧树脂、二环戊二烯改性的苯酚环氧树脂、萘酚型环氧树脂、苯酚芳烷基环氧树脂或萘酚芳烷基环氧树脂；具有三嗪环的树脂，例如脲醛树脂或三聚氰胺树脂；聚亚胺酯树脂；硅树脂；具有苯并噁嗪环的树脂；氰酸酯树脂；具有酚羟基的(甲基)丙烯酰化的苯酚酚醛清漆树脂；丙烯酸酯，例如乙烯酯树脂或氨酯丙烯酸酯树脂；不饱和聚酯树脂；邻苯二甲酸二烯丙酯树脂和马来酰亚胺树脂，其中可以适当地使用诸如酚醛清漆型环氧树脂、双酚环氧树脂或联苯环氧树脂的环氧树脂。
[0042]
例如，使用酚醛清漆型环氧树脂可以提高用于半导体的粘合膜的玻璃转化温度，降低其弹性模量。使用萘酚型环氧树脂可以提高用于半导体的粘合膜的玻璃转化温度，并增强接合界面的粘合性。
[0043]
构成本发明的用于半导体的粘合膜的树脂可以包含(C)无机填料。无机填料可以在半导体芯片和配线基板的热压接合工艺后立即提高用于半导体的粘合膜的热时弹性模量，从而促进密封工艺中半导体芯片对密封材料的封止压力的耐受性，并保持密封工艺中用于半导体的粘合膜适宜的流动性。(C)无机填料的实例包括银、氧化钛、石英、云母和氧化铝。其中，优选石英填料。使用在粘合膜中具有高分散性的石英填料可以使粘合膜具有良好的外观，降低用于半导体的粘合膜的线性膨胀系数，防止两层或更多层层积半导体芯片时半导体芯片发生变形，并提高制造粘合膜过程中的工作效率。
[0044]
石英填料可以是破碎形式(fragmented form)和熔融形式(fused form)，其中，从用于半导体的粘合膜的均一分散性方面考虑，优选为后者。
[0045]
从防止粘合膜中的填料发生聚集和提高其外观方面考虑，(C)无机填料的平均粒径优选设定为0.01μm或更高，更优选为0.1μm或更高。另一方面，从确保能够防止无机填料从粘合膜中伸出并由此在热压接合工艺中破坏半导体芯片方面考虑，(C)无机填料的平均粒径优选设定为20μm或更低，更优选为5μm或更低。
[0046]
虽然没有具体限定(C)无机填料的含量，但相对于100重量份除无机填料以外的树脂组合物，优选无机填料的含量为5重量份或更多，更优选为10重量份或更多。此含量使能够在半导体芯片和配线基板的热压接合工艺后立即提高用于半导体的粘合膜的热时弹性模量，从而促进半导体芯片在密封工艺中对密封材料的封止压力的耐受性，并保证所述用于半导体的粘合膜在密封工艺中具有适宜的流动性。另外，相对于100重量份的树脂组合物，优选(C)无机填料的含量为100重量份或更少，更优选为80重量份或更少。将(C)无机填料的含量设定在上述范围内可以使粘合膜在密封工艺中保持适宜的流动性。
[0047]
构成本发明的用于半导体的粘合膜的树脂还可以包含(D)偶联剂。偶联剂可以进一步提高用于半导体的粘合膜中的树脂与待接合物表面间的粘合性，以及用于半导体的粘合膜中的树脂和石英表面间的粘合性。
[0048]
(D)偶联剂的实例包括基于硅烷的偶联剂、基于钛的偶联剂和基于铝的偶联剂，其中，从与组成半导体芯片界面的硅之间的粘合性方面考虑，优选基于硅烷的偶联剂。
[0049]
合适的硅烷偶联剂的实例包括乙烯基三氯硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、β-(3，4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧丙基三甲氧基硅烷、γ-环氧丙氧丙基甲基二甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基甲基二乙氧基硅烷、γ-甲基丙烯酰氧基丙基三乙氧基硅烷、N-β(氨乙基)γ-氨丙基甲基二甲氧基硅烷、N-β(氨乙基)γ-氨丙基三甲氧基硅烷、N-β(氨乙基)γ-氨丙基三乙氧基硅烷、γ-氨丙基三甲氧基硅烷、γ-氨丙基三乙氧基硅烷、N-苯基-γ-氨丙基三甲氧基硅烷、γ-氯丙基三甲氧基硅烷、γ-巯基丙基三甲氧基硅烷、3-异氰酸酯丙基三乙氧基硅烷(isocyanatepropyltriethoxysilane)和3-丙烯酰氧基丙基三甲氧基硅烷，可以使用其中的一种或两种或多种的组合。
[0050]
从进一步提高粘合性能方面考虑，相对于100重量份树脂组合物，(D)偶联剂的含量优选为0.01重量份或更多，更优选为0.1重量份或更多。另一方面，从防止出现分解气体(脱气)和孔隙方面考虑，相对于100重量份的树脂组合物，优选(D)偶联剂的含量为10重量份或更少，更优选5重量份或更少。
[0051]
另外，构成本发明的用于半导体的粘合膜的树脂可以包含低分子量单体(E)酚醛树脂，目的是提供粘结能力(tacking capability)并提高临时粘合性能。
[0052]
(E)酚醛树脂的实例包括苯酚酚醛清漆树脂、甲酚酚醛清漆树脂、苯酚芳烷基树脂(含有亚苯基或亚联苯基骨架)、萘酚芳烷基树脂、三酚甲烷树脂和二环戊二烯酚醛树脂。可以使用其中的一种或两种或多种的组合。
[0053]
另外，为了调整工作效率和特性，构成本发明的用于半导体的粘合膜的树脂可以包含除上述(A)至(E)以外的组分。
[0054]
可以通过将上述树脂组合物溶解在诸如甲乙酮、丙酮、甲苯或二甲基甲酰胺的溶剂中从而形成清漆，然后利用逗点式涂布机(commacoater)、铸模涂布机(die coater)或凹板涂布机(gravure coater)将清漆涂布于离型板(release sheet)上，并在干燥后除去离型板，从而获得本发明的用于半导体的粘合膜。
[0055]
虽然没有具体限定用于半导体的粘合膜的厚度，但优选厚度为3μm-100μm，更优选为5μm-70μm。可以容易地准确调整上述范围内的厚度。
[0056]
下面列举了粘合膜作为切割板的方式的一个实例：
将粘合膜涂布在离型板上并干燥得到带有离型板的粘合膜，在该带有离型板的粘合膜的离型板面的对面上粘合保护膜，并将离型板和粘合膜层切割成两半。然后将由粘合剂层(adhesive layer)和基膜组成的切割板与离型板粘合，从而使切割板的粘合剂层和与粘合膜层相对的离型板面彼此相对，剥去保护膜，从而得到由基膜、粘合剂层、离型板和粘合膜层按此顺序构成的具有切割板功能的粘合膜。
[0057]
下面将说明包含本发明的用于半导体的粘合膜的半导体器件。
[0058]
在本发明的半导体器件中，半导体芯片和引线框、半导体芯片和配线基板、以及半导体芯片和另一个半导体芯片是利用本发明的用于半导体的粘合膜接合的。本发明的一个实施方案可以定义为，例如包含含有第一半导体芯片和配线基板的半导体电子元件的半导体器件(布置所述半导体电子元件从而使第一半导体芯片具有电极的一面的对面和配线基板具有电极的一面相对)，其中，所述第一半导体芯片和配线基板是利用本发明的用于半导体的粘合膜接合的。本发明的另一个实施方案可以定义为如上限定的半导体器件，但包含多层型半导体电子元件(其还包含层积在第一半导体芯片具有电极的一面上的第二半导体芯片)，其中，第一半导体芯片和第二半导体芯片通过本发明的用于半导体的粘合膜接合。在多层型半导体电子元件中，可以单独使用本发明的用于半导体的粘合膜将第一半导体芯片和配线基板接合。本发明的半导体器件的结构并不受特别限定，前提是半导体芯片和引线框、半导体芯片和配线基板、以及半导体芯片和另一半导体芯片是通过本发明的用于半导体的粘合膜接合的。
[0059]
图2为显示本发明实施方案的半导体器件的结构的剖面图，所述半导体器件包含用于半导体的粘合膜。对于附图说明，同一组件用同一个数字表示，该说明将不再重复。
[0060]
图2显示的半导体器件100包含按以下顺序层积在配线基板101上的第一半导体芯片105、第二半导体芯片109、第三半导体芯片113、第四半导体芯片117和第五半导体芯片121，各个半导体芯片通过引线125使半导体芯片上的引线接合电极127与配线基板上的引线接合电极129导电连接。另外，半导体芯片和引线125包封在密封材料131中，从而得到保护。在配线基板101的背面，具有多个作为外部连接端子的外部连接电极123。
[0061]
在图2所示的半导体器件100中，利用用于半导体的第一粘合膜103将第一半导体芯片105和配线基板101接合，从而使第一半导体芯片105具有电极的一面的对面和配线基板101具有电极的一面彼此相对；利用用于半导体的第二粘合膜107将第一半导体芯片105与第二半导体芯片109接合，从而使第一半导体芯片105的上面(具有电极的一面)与第二半导体芯片109的下面(具有电极的一面的对面)彼此相对；用用于半导体的第三粘合膜111将第二半导体芯片109与第三半导体芯片113接合，从而使第二半导体芯片109的上面(具有电极的一面)与第三半导体芯片113的下面(具有电极的一面的对面)彼此相对；用用于半导体的第四粘合膜115将第三半导体芯片113与第四半导体芯片117接合，从而使第三半导体芯片113的上面(具有电极的一面)与第四半导体芯片117的下面(具有电极的一面的对面)彼此相对；用用于半导体的第五粘合膜119将第四半导体芯片117与第五半导体芯片121接合，从而使第四半导体芯片117的上面(具有电极的一面)与第五半导体芯片121的下面(具有电极的一面的对面)彼此相对。
另外，第一半导体芯片105、第二半导体芯片109、第三半导体芯片113、第四半导体芯片117和第五半导体芯片121中的每一个都通过引线125使各半导体芯片上的引线接合电极127与配线基板101上的引线接合电极129导电连接。
[0062]
另外，虽然没有具体限定，但优选位于上层的半导体芯片小于位于下层的半导体芯片，从而优选第二半导体芯片109小于第一半导体芯片105，并且从获得集成密度更高的半导体芯片方面考虑，优选上层的半导体芯片通常位于下层半导体芯片的中心位置。另外，优选与引线125连接的各半导体芯片的引线接合电极127位于所述半导体芯片的外周。
[0063]
对于多层层积半导体芯片(如在导体器件100中)，由于在引线接合工艺中经历长的受热史，使用本发明的用于半导体的粘合膜作为用于半导体的第一粘合膜103可防止用于半导体的粘合膜在密封工艺中对配线基板的凹凸表面的不良填充，由此防止用于半导体的粘合膜在半导体器件100的回流工艺中的分离和防止封装件出现裂纹。
[0064]
虽然该实施方案代表包含五层半导体芯片的半导体器件100，但是对于半导体芯片的层数没有限制，且可以将本发明的用于半导体的粘合膜和常规用于半导体的粘合膜组合使用。
[0065]
下面将说明半导体器件的制造方法。
图3为半导体器件的制造工艺的流程图。
如图3所示，所述半导体器件的制造工艺包括：临时接合工艺，包括用用于半导体的粘合膜将半导体芯片与配线基板或半导体芯片与另一半导体芯片临时接合；引线接合工艺，包括引线接合，使半导体芯片与配线基板电连接；密封工艺，包括用密封树脂密封半导体芯片和接合引线；以及固化工艺，包括固化密封树脂和粘合膜。
[0066]
下文将分别对上述工艺进行阐述。
临时接合工艺
在该工艺中，配线基板、用于半导体的粘合膜和半导体芯片是按此顺序层积的，且半导体芯片和配线基板通过热压接合临时接合。此处，可以提前将用于半导体的粘合膜与半导体芯片或配线基板接合。所述临时接合可以通过在80℃-150℃的温度、1N-20N荷载下热压0.1-5秒而进行，例如利用粘片机(die bonder)(AD898，ASM制造)。在这个工艺中，为了防止半导体芯片受到破坏，优选在低温、低荷重和短时的条件下进行热压接合，在该工艺中配线基板和用于半导体的粘合膜之间可能存在空隙，原因是用所述用于半导体的粘合膜也难以完全填充配线基板的表面凹凸。
[0067]
引线接合工艺
在这个工艺中，半导体芯片的电极和配线基板的电极通过接合引线电连接。可以利用，例如粘片机(EAGLE60，ASM制造)在150℃-200℃下实现接合引线的连接。
在包含两层或更多层层积的半导体芯片的半导体器件中，第一层半导体芯片的引线接合工艺之后是第二层的临时接合，进行第二层的引线接合，然后对经过引线接合的半导体芯片的上层进行临时接合，由此重复进行引线接合。
[0068]
密封工艺
在该工艺中，用密封树脂覆盖半导体芯片以及连接半导体芯片电极和配线基板电极的接合引线，从而进行密封。该工艺保证绝缘性和防湿性。可以利用，例如传递成型机在150℃-200℃高温、50-100kg/mm2高压下进行密封。另外，在涂布密封树脂后所述用于半导体的粘合膜立即软化，从而完全填充配线基板表面的凹凸。
对于多层层积的半导体芯片并由此在引线接合工艺中经历较长受热史的情况，当使用用于半导体的粘合膜时，用于半导体的粘合膜被固化且流动性降低，从而产生配线基板的表面凹凸不能被充分填充的缺陷。利用本发明的粘合膜可以预防此种缺陷。
[0069]
固化工艺
在该工艺中，密封树脂和用于半导体的粘合膜最终被固化。由此可以获得作为最终产品的半导体器件。
在密封树脂和用于半导体的粘合膜可以进行预期固化的前提下，对于固化条件没有特别限定，但优选该条件设定如下：例如温度为100℃-200℃和持续时间为5-300分钟，更优选为在120℃-180℃下持续30-240分钟。
[0070]
在前述工艺中，最终可以获得如图2所示的半导体器件100。
[0071]
半导体器件的结构并不受限于所述示例，该半导体器件可具有任何其它结构，前提是半导体芯片通过用于半导体的粘合膜与待接合物体接合。
[0072]
虽然已经参考附图对本发明的实施方案进行阐述，但可以理解该实施方案仅为示例性的，因此可以采用其它各种构成。
[0073]
以下将根据实施例和比较例对本发明进行更详细的阐述，然而本发明并不受限于此实施例。需要注意的是，表1显示了各组分的混合比例以及对以下实施例和比较例的粘合膜的评价结果。
实施例
[0074]
实施例1
用于粘合膜的树脂清漆的制备
将以下物质溶解在甲乙酮(MEK)中，从而获得树脂固体含量为20％的树脂清漆：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂；和
10重量份的PR-HF-3(Sumitomo Bakelite Co.，Ltd.生产，羟基当量为104g/OH基团)，其作为酚醛树脂。
[0075]
粘合膜的制备
用逗点式涂布机将上述获得的树脂清漆涂布在作为基膜(I)的聚邻苯二甲酸乙二酯膜(Art.No.Purex A54，Teijin DuPont Films Japan Ltd.生产，厚度为38μm)上，并在150℃下干燥3分钟，从而获得厚度为25μm的粘合膜。
[0076]
切割板的制备
利用挤出机使由60重量份Hybrar和40重量份聚丙烯组成的Kuriatekku CT-H717(Kuraray Co.，Ltd.，生产)形成厚度为100μm作为基膜(∏)的膜，对其表面进行电晕处理(corona-treated)。然后将通过50重量份2-乙基己基丙烯酸酯、10重量份丁基丙烯酸酯、37重量份乙烯基丙烯酸酯和3重量份2-羟乙基甲基丙烯酸酯的共聚而获得的重均分子量为500000的共聚物涂布在厚度为38μm的剥离的聚酯膜上，从而使干燥后共聚物的厚度为10μm，并在80℃下干燥5分钟，从而得到粘合剂层。然后将粘合剂层层压在基膜(∏)的经电晕处理的表面，从而获得由基膜(∏)、粘合剂层和聚酯膜构成的按此顺序成层的切割板。
[0077]
具有切割板功能的粘合膜的制备
将保护膜粘合在涂布有粘合膜的基膜(I)的粘合膜层，并将基膜(I)和粘合膜层切割成两半，直径为220mm。然后将聚酯膜从由基膜(∏)、粘合剂层和聚酯膜构成的切割板上除去，将粘合剂层和基膜(I)粘合并除去保护膜。结果是，获得由基膜(∏)、粘合剂层、基膜(I)和粘合膜层构成的按此顺序成层的具有切割板功能的粘合膜。
[0078]
175□下剪应变量γ的测量方法
将由实施例和比较例制备的用于半导体的粘合膜切割成25mm×25mm的尺寸，并多层层积至厚度为100μm，从而制备所述样品。利用粘弹性仪(HAAKE Rheostress RS-150，Thermo Fisher Scientific，Inc.制造)在直径为20mm的平行板上使由此制备的样品于175□恒温下和1Hz的频率下经受3000Pa的剪应力，在开始测量后的10分钟和2小时测量产生的剪应变的量。
[0079]
接合后芯片剪切强度(die shear strength)的测量方法
将根据实施例和比较例制备的用于半导体的粘合膜插入(interleaved)尺寸为4×4mm、厚度为550μm的硅片和涂布有阻焊剂(Art.No.AUS308，Taiyo Ink Mfq.Co.，Ltd.生产)的双马来酰亚胺三嗪基板之间，在130℃、5N下热压接合1秒，并将此样品置于175℃下热处理2小时，随后在260℃的热板上停留20秒，然后利用推拉力计(push-pull gauge)以0.55mm/min的速度测量剪切强度，将此值作为芯片剪切强度。
[0080]
半导体器件的制备
进行以下步骤以制备图4所示的半导体器件200。
[0081]
将具有切割板功能的粘合膜135的粘合膜层与8英寸、200μm晶片的背面相对，并在60℃下彼此粘合，由此获得与具有切割板功能的粘合膜135粘合的晶片。
[0082]
然后，利用轴转速为30,000rpm、切断速度(cutting speed)为50mm/sec的切割锯将所述与具有切割板功能的粘合膜135粘合的晶片切割成10mm×10mm的方块，该尺寸是半导体芯片137的尺寸。然后，从具有切割板功能的芯片贴合膜(die attach film)的背面将半导体芯片向上推，并沿着基膜(I)和粘合剂层的界面分离，从而得到具有粘合剂层(粘合膜135)的半导体芯片137。
[0083]
将具有粘合剂层的半导体芯片137(10mm×10mm的方块)与涂布有阻焊剂(Art.No.AUS308，Taiyo Ink Mfg.Co.，Ltd.生产)的双马来酰亚胺-三嗪树脂配线基板133(配线段差(interconnect level gap)为5-10μm)在130℃、5N下热压接合1秒，从而使半导体芯片和双马来酰亚胺-三嗪树脂配线基板临时接合。随后，模拟用于多层层积半导体芯片的引线接合工艺中的受热史，在175℃下热处理10分钟或2小时。然后，利用低压传递成型仪使用密封树脂139(EME-G770，Sumitomo Bakelite Co.，Ltd.生产)在成型温度175℃、压力70kg/cm2、固化时间2分钟的条件下进行封止，接着在175℃下热处理2小时，从而使密封树脂139完全固化，由此得到10个半导体器件。
[0084]
配线基板段差的填充性能
利用扫描式超声波探伤仪(SAT)，根据下述标准(用于半导体的粘合膜对配线基板上的段差的填充比例、)，对由实施例和比较例获得的粘合膜制备的半导体器件的配线基板上的段差的填充性能进行评价。
aa：填充比例为100％
bb：填充比例为80％-100％(不包含100％)
cc：填充比例为40％-80％(不包含80％)
dd：填充比例小于40％，或者在这个粘合膜内形成空隙
[0085]
抗裂性(crack resistance)
将由实施例和比较例获得的粘合膜制备的半导体器件在85℃、RH60％下吸湿168小时，然后根据以下标准利用扫描式超声波探伤仪(SAT)通过三次260℃下IR回流工艺来评价抗裂性。
aa：10个产品中的裂纹数为0-10个
bb：10个产品中的裂纹数为1-3个
cc：10个产品中的裂纹数为4-9个
dd：10个产品中的裂纹数为10个
[0086]
实施例2
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0087]
实施例3
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
30重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
实施例4
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
0.5重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
实施例5
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂；
4重量份的PR-HF-3(Sumitomo Bakelite Co.，Ltd.生产，羟基当量为104g/OH基团)，其作为酚醛树脂；和
6重量份的邻甲酚酚醛清漆型环氧树脂(EOCN-1020-80，NipponKayaku Co.，Ltd.生产，环氧当量为200g/eq)。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0090]
实施例6
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯腈-甲基丙烯酸缩水甘油酯-N，N-二甲基丙烯酰胺共聚物，SG-80HDR，Nagase ChemtexCorporation生产，Tg：10℃，重均分子量：350,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0091]
实施例7
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
12重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；和
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0092]
实施例8
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，SG-708-6DR，NagaseChemtex Corporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
28重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0093]
实施例9
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的苯氧树脂(Phenotohto YP-50，Tohto Kasei Co.，Ltd.生产，Mw：60000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0094]
实施例10
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的丁腈橡胶(NBR)(Nipol1042，Zeon Corporation生产)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0095]
实施例11
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的氧化铝(AO509，Admatechs Co.，Ltd.生产，平均粒径为10μm)，其作为无机填料；
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
[0096]
比较例1
用于粘合膜的树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
10重量份的苯氧树脂(JER1256，Japan Epoxy Resins Co.，Ltd.生产，Mw：50000)，其作为除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；
1重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂；
1重量份的PR-HF-3(Sumitomo Bakelite Co.，Ltd.生产，羟基当量为104g/OH基团)，其作为酚醛树脂；和
10重量份的邻甲酚酚醛清漆型环氧树脂(EOCN-1020-80，NipponKayaku Co.，Ltd.生产，环氧当量为200g/eq)，其作为环氧树脂。
以与实施例1相同的方式进行评价，不同之处在于用于于粘合膜的树脂清漆的制备。
[0097]
比较例2
粘合膜用树脂清漆的制备
使用以下物质：
100重量份的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸酯-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，Nagase ChemtexCorporation生产，Tg：6℃，重均分子量：500,000)，其作为(甲基)丙烯酸酯共聚物；
78重量份的球状石英(SE2050，Admatechs Co.，Ltd.生产，平均粒径为0.5μm)，其作为无机填料；和
2重量份的γ-环氧丙氧丙基三甲氧基硅烷(KBM403E，Shin-EtsuChemical Co.，Ltd.生产)，其作为偶联剂。
以与实施例1相同的方式进行评价，不同之处在于用于粘合膜的树脂清漆的制备。
实施例和比较例中用于粘合膜的树脂清漆的混合物的比例和评价结果示于表1。在表1中，各组分的比例用重量份表示。
[0098]
Figure A20088000654700311
Figure A20088000654700321

Claims (12)

1.用于半导体的粘合膜，其用于层积两层或更多层半导体芯片，所述粘合膜包含：
(A)(甲基)丙烯酸酯共聚物，和
(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂；
所述用于半导体的粘合膜的构成使其在开始测量后的10分钟起满足下式(1)达2个小时，
0.10≤γ≤0.30        (1)
其中，γ表示在直径为20mm的平行板上，于175℃的温度和1Hz的频率，经受3000Pa的剪应力后产生的剪应变的量。
2.如权利要求1所述的用于半导体的粘合膜，其基本不含热固性树脂。
3.如权利要求1或2所述的用于半导体的粘合膜，其中，所述(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂为苯氧树脂。
4.如权利要求1至3中任一项所述的用于半导体的粘合膜，其中，所述(A)(甲基)丙烯酸酯共聚物包含具有羧基基团的单体单元。
5.如权利要求1至4中任一项所述的用于半导体的粘合膜，其中，相对于100重量份的所述(A)(甲基)丙烯酸酯共聚物，所述(B)除(甲基)丙烯酸酯共聚物以外的热塑性树脂的添加量为0.5重量份-30重量份。
6.如权利要求1至5中任一项所述的用于半导体的粘合膜，其进一步包含(C)无机填料。
7.如权利要求6所述的用于半导体的粘合膜，其中，所述(C)无机填料为石英。
8.如权利要求6或7所述的用于半导体的粘合膜，其中，相对于100重量份的除(C)无机填料以外的树脂组合物，(C)无机填料的添加量为5重量份-100重量份。
9.如权利要求1至8中任一项所述的用于半导体的粘合膜，其进一步包含(D)偶联剂。
10.如权利要求9所述的用于半导体的粘合膜，其中，相对于100重量份的树脂组合物，(D)偶联剂的添加量为0.01重量份-10重量份。
11.如权利要求1至10中任一项所述的用于半导体的粘合膜，其被配置为可作为切割板使用。
12.半导体器件，其包含利用权利要求1至11中任一项所述的用于半导体的粘合膜所层积的两层或多层半导体芯片。
CN2008800065475A 2007-02-28 2008-02-26 用于半导体的粘合膜和使用该粘合膜的半导体器件 Expired - Fee Related CN101627465B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007048497 2007-02-28
JP048497/2007 2007-02-28
PCT/JP2008/000343 WO2008105169A1 (ja) 2007-02-28 2008-02-26 半導体用接着フィルムおよびそれを用いた半導体装置

Publications (2)

Publication Number Publication Date
CN101627465A true CN101627465A (zh) 2010-01-13
CN101627465B CN101627465B (zh) 2011-06-01

Family

ID=39721011

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800065475A Expired - Fee Related CN101627465B (zh) 2007-02-28 2008-02-26 用于半导体的粘合膜和使用该粘合膜的半导体器件

Country Status (7)

Country Link
US (1) US8008124B2 (zh)
EP (1) EP2117041A4 (zh)
JP (1) JPWO2008105169A1 (zh)
KR (1) KR20090128400A (zh)
CN (1) CN101627465B (zh)
TW (1) TW200844203A (zh)
WO (1) WO2008105169A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103109353A (zh) * 2010-07-13 2013-05-15 日立化成株式会社 切割-芯片焊接一体型膜及其制造方法、半导体芯片的制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101141493B1 (ko) * 2008-03-14 2012-05-03 스미토모 베이클라이트 가부시키가이샤 반도체소자 접착필름 형성용 수지 바니시, 반도체소자 접착필름, 및 반도체장치
JP2011077199A (ja) * 2009-09-29 2011-04-14 Sumitomo Bakelite Co Ltd 半導体パッケージおよび半導体装置
US8247895B2 (en) * 2010-01-08 2012-08-21 International Business Machines Corporation 4D device process and structure
JP5880450B2 (ja) * 2011-01-31 2016-03-09 住友ベークライト株式会社 樹脂組成物および半導体装置
US8796049B2 (en) * 2012-07-30 2014-08-05 International Business Machines Corporation Underfill adhesion measurements at a microscopic scale
US9299688B2 (en) * 2013-12-10 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor devices and methods of packaging semiconductor devices
KR101709689B1 (ko) 2013-12-19 2017-02-23 주식회사 엘지화학 다이싱 필름 점착층 형성용 조성물 및 다이싱 필름
US20160137888A1 (en) * 2014-11-18 2016-05-19 E I Du Pont De Nemours And Company Bondply adhesive composition
RU2741435C2 (ru) * 2016-08-12 2021-01-26 Дау Глоубл Текнолоджиз Ллк Чувствительные к давлению адгезивные композиции на водной основе и способы их получения
CN111630642B (zh) * 2018-01-30 2023-05-26 株式会社力森诺科 半导体装置的制造方法及膜状粘接剂

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69530152D1 (de) * 1994-08-12 2003-05-08 Soken Kagaku Kk Acrylfolie, Acryl-Klebfolie und Verfahren zu ihrer Herstellung
JP3578592B2 (ja) * 1997-06-03 2004-10-20 住友ベークライト株式会社 半導体用ダイアタッチ樹脂ペースト
JP3498537B2 (ja) 1997-06-25 2004-02-16 日立化成工業株式会社 絶縁層用接着フィルム
TW460717B (en) * 1999-03-30 2001-10-21 Toppan Printing Co Ltd Optical wiring layer, optoelectric wiring substrate mounted substrate, and methods for manufacturing the same
US6413620B1 (en) * 1999-06-30 2002-07-02 Kyocera Corporation Ceramic wiring substrate and method of producing the same
JP3562465B2 (ja) 1999-11-30 2004-09-08 日立化成工業株式会社 接着剤組成物、接着フィルム及び半導体搭載用配線基板
AU2001232298A1 (en) 2000-02-15 2001-08-27 Hitachi Chemical Co. Ltd. Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
US6482878B1 (en) 2000-04-21 2002-11-19 National Starch And Chemical Investment Holding Corporation Polyurethane hotmelt adhesives with acrylic copolymers and thermoplastic resins
US6774501B2 (en) * 2000-09-29 2004-08-10 Hitachi Chemical Co., Ltd. Resin-sealed semiconductor device, and die bonding material and sealing material for use therein
JP2002138270A (ja) * 2000-10-31 2002-05-14 Hitachi Chem Co Ltd 接着フィルム、基材付き接着フィルム及びそれらの製造法、半導体用接着フィルム、半導体素子、支持部材、半導体素子と支持部材の接着法並びに半導体装置
JP4720073B2 (ja) * 2003-08-07 2011-07-13 日立化成工業株式会社 接着剤組成物、回路接続用接着剤組成物、接続体及び半導体装置
JP3754700B1 (ja) 2004-09-02 2006-03-15 住友ベークライト株式会社 半導体用接着フィルム及びこれを用いた半導体装置
JP4691365B2 (ja) * 2005-02-04 2011-06-01 株式会社巴川製紙所 半導体装置用接着剤組成物および半導体装置用接着シート
JP4839629B2 (ja) * 2005-02-18 2011-12-21 日立化成工業株式会社 フィルム状接着剤、接着シート及びそれを使用した半導体装置
JP2006232985A (ja) * 2005-02-24 2006-09-07 Shin Etsu Chem Co Ltd 非ハロゲン系接着剤組成物ならびにそれを用いたカバーレイフィルムおよび接着シート
JP4650024B2 (ja) * 2005-02-28 2011-03-16 住友ベークライト株式会社 ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法及び半導体装置。
US7560821B2 (en) * 2005-03-24 2009-07-14 Sumitomo Bakelite Company, Ltd Area mount type semiconductor device, and die bonding resin composition and encapsulating resin composition used for the same
ES2449515T3 (es) * 2005-10-06 2014-03-20 Henkel Ag & Co. Kgaa Reducción de la transferencia de vibraciones
JP4493643B2 (ja) * 2006-12-06 2010-06-30 日東電工株式会社 再剥離型粘着剤組成物、及び粘着テープ又はシート
JP2009096851A (ja) * 2007-10-15 2009-05-07 Three M Innovative Properties Co 非導電性接着剤組成物及び非導電性接着フィルム、並びにそれらの製造方法及び使用方法
JP4939574B2 (ja) * 2008-08-28 2012-05-30 日東電工株式会社 熱硬化型ダイボンドフィルム
JP5501060B2 (ja) * 2009-04-02 2014-05-21 日東電工株式会社 半導体ウエハ保護用粘着シートの貼り合わせ方法、及びこの貼り合わせ方法に用いる半導体ウエハ保護用粘着シート

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103109353A (zh) * 2010-07-13 2013-05-15 日立化成株式会社 切割-芯片焊接一体型膜及其制造方法、半导体芯片的制造方法
US8975161B2 (en) 2010-07-13 2015-03-10 Hitachi Chemical Company, Ltd. Dicing/die bonding integral film, dicing/die bonding integral film manufacturing method, and semiconductor chip manufacturing method
CN103109353B (zh) * 2010-07-13 2015-11-25 日立化成株式会社 切割-芯片焊接一体型膜及其制造方法、半导体芯片的制造方法

Also Published As

Publication number Publication date
EP2117041A4 (en) 2010-06-02
US20100320620A1 (en) 2010-12-23
TW200844203A (en) 2008-11-16
KR20090128400A (ko) 2009-12-15
EP2117041A1 (en) 2009-11-11
WO2008105169A1 (ja) 2008-09-04
US8008124B2 (en) 2011-08-30
JPWO2008105169A1 (ja) 2010-06-03
CN101627465B (zh) 2011-06-01

Similar Documents

Publication Publication Date Title
CN101627465B (zh) 用于半导体的粘合膜和使用该粘合膜的半导体器件
US8436479B2 (en) Semiconductor device having a chip bonding using a resin adhesive film and method of manufacturing the same
TWI485225B (zh) 接著片及半導體裝置的製造方法
JP5428423B2 (ja) 半導体装置及びフィルム状接着剤
JP4766180B2 (ja) 接着剤組成物
JP5499516B2 (ja) 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法
JP4957064B2 (ja) 半導体装置及びその製造方法
JP6222395B1 (ja) フィルム状接着剤及びダイシングダイボンディング一体型接着シート
JP2004039928A (ja) 接着シート
JP7067570B2 (ja) 半導体装置の製造方法、フィルム状接着剤及び接着シート
JP6443521B2 (ja) フィルム状接着剤及びダイシングダイボンディング一体型接着シート
JP6733394B2 (ja) 接着シート、及び半導体装置の製造方法。
JP5272284B2 (ja) 接着シート、半導体装置及び半導体装置の製造方法
JP6191800B1 (ja) フィルム状接着剤及びダイシングダイボンディング一体型接着シート
JP5585542B2 (ja) 接着フィルムおよびその用途ならびに半導体装置の製造方法
JP6768188B2 (ja) 接着フィルム用接着剤組成物及びその製造方法
KR102629865B1 (ko) 필름상 접착제, 접착 시트, 및 반도체 장치와 그 제조 방법
JP2017045934A (ja) 接着フィルム
JP2020088118A (ja) フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法
TWI797910B (zh) 切晶黏晶膜及其製造方法、以及半導體封裝及其製造方法
WO2019171544A1 (ja) 半導体装置の製造方法及びフィルム状接着剤
CN111630641A (zh) 半导体装置的制造方法及膜状粘接剂

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110601

Termination date: 20120226