TW200844203A - Adhesive film for semiconductor device and semiconductor device using same - Google Patents

Adhesive film for semiconductor device and semiconductor device using same Download PDF

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Publication number
TW200844203A
TW200844203A TW097106760A TW97106760A TW200844203A TW 200844203 A TW200844203 A TW 200844203A TW 097106760 A TW097106760 A TW 097106760A TW 97106760 A TW97106760 A TW 97106760A TW 200844203 A TW200844203 A TW 200844203A
Authority
TW
Taiwan
Prior art keywords
adhesive film
semiconductor
weight
resin
parts
Prior art date
Application number
TW097106760A
Other languages
English (en)
Inventor
Hiroyuki Yasuda
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW200844203A publication Critical patent/TW200844203A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
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  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

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200844203 .九、發明說明： 【發明所屬之技術領域】 本么明係關於一種勒菩璧聘· »放m 4+ 其是闕於-種用其之半導體裝置，尤 Γ弁…導體元件之黏著薄膜。 【无則技術】 j年來’對應於電子設備之高功能 之繼化、高積體化之要求曰益強列4半置 .容量高密度化不斷進步。 I、 +—體封裝之大 為應對此種要求’而對例如藉由於半導體元件上并岛 多段半導體元件，而實現半導體體7&quot;件上積層有 *六”L 只見牛¥體封裝之小型化、薄型化、 大谷1化之方法展開研究。於 丁烯二酿亞胺—三啡基板n主要使用雙順 利文獻υ。 基板等有機基板（專 盘in利文f1 ’於此種半導體封裝中’於半導體元件 2絲板、或半導體元件與半導體元件之黏著中，難以 半導俨开杜，Φ门仃適里塗佈而不使黏著劑自 版7G件祕出，因此主要使用薄膜狀黏著劑。 作為與薄膜狀黏著劑相關之習知技術，另外還有專 利文獻2〜4中所記載者。 荖t專利文獻L中記載有：於半導體元件與佈線基板之黏 ’使用由裱乳樹脂及丙烯酸橡膠所構成之黏著薄膜。 ^專利文獻3中記載有：於半導體元件與佈線基板之黏 者中，使用以苯氧樹脂為主體而構成之黏著薄膜。 於專利文獻4中記載有：使黏著帶於黏著溫度下之最低 97106760 200844203 黏度處於特定範g，從而控制流動性。 專利文獻1·日本專利特開2〇〇6—73982號公報 專利文獻2·日本專利特開2〇〇1 —22〇571號公報 專利文獻3·日本專利特開2〇〇2-13827〇號公報 專利文獻4 :日本專利特開平1 1-12545號公報 j而，上述文獻中所記载之習次口技術係於下述方面呈 ?ίτ 至 ΘΗ β =將，線基板與半導體^件黏著之情況下，由於佈線基 t表面存在金屬佈線’雖_金屬佈線由阻銲劑被覆，但 存^金屬佈線之部分及無金屬佈線之部分，故而佈線基 =面凹凸。使用習知之半導體用黏著薄膜來黏著半 ^體π件與料基板時，㈣無法恰到好處地將該凹凸造 二’有時於佈線基板與半導體元件之間殘留形成間隙（空 隙），而使半導體封裝之可靠性劣化。 半導體用㈣薄騎料基板表面之凹㈣殖埋 體用黏著賴將半導體元件與佈線基板黏著，並於 物線基板之間進行打線接合，其後，利用封 二封，加熱·加壓來進行’因此半導體用黏著薄膜 於封入岔封材時之流動性較為重要。 、 需：二：半導體元件之多段化不斷進展，打線接合步驟 ，爾卖二’故而與習知相比，至封入密封材為止之半導 f讀膜所經受之熱歷程變長，半導體用黏著薄膜於 二：：材前產生硬化，流動性下降，因此有時會產“ 法填埋佈線基板表面之凹凸之問題。 … 97106760 7 200844203 【發明内容】 (發明所欲解決之問題） 本發明之目的在於提供一 導體妒詈，卜、+、*皆 但干#耻用黏者潯膜以及半 元件之半導體p w φ b有祕係於牙貝層有多段半導體 ^ 、、置_ P便打線接合步驟需要更多時η 使传至封入密封材為止之半 ：:’， 性亦優異者。 以祕板表㈣凸之填埋 (解決問題之手段） 雕種半導體用黏著薄膜，其係積層有2段以上半導 ^ 7° ’且包含(Α)(甲基)丙烯酸酯共聚物、及⑻盥(甲
基）丙烯酸醋共聚物不同之熱塑性樹脂，並且，上述半 體用黏著薄膜於將使用直徑為2〇 C 下、以！Hz之頻率、施加_ρκ剪應力時所產 ㈣應變量設為7之情況下，自敎開始後1G分鐘至2 小時為止，滿足下述式（1 )。 0. 10^ r ^ 〇. 30 (!) [2]如[1]之半導體用黏著薄膜，其中，其實質上不含熱 硬化性樹脂。 [3] 如[1]或[2]之半導體用黏著薄膜，其中，上述（B) 與（曱基）丙烯酸酯共聚物不同之熱塑性樹脂係苯氧樹脂。 [4] 如[1]至[3]中任一項之半導體用黏著薄膜，其中， 上述（A)(曱基）丙烯酸酯共聚物含有具有羧基之單體單 位。 97106760 8 200844203 .m如⑴至⑷中任-項之半導體⑽著薄膜，其中， 目=於100重量份之上述(A)(甲基)丙烯酸酯共聚物，上 =與（甲基）丙烯酸醋共聚物不同之熱塑性樹脂之添加 里為0.5重量份以上且3〇重量份以下。 [6]如[1]至[5]中任—項之半導體用黏著薄膜，其中， 其進而含有（C)無機填充劑。 [7 ]如[6 ]之半導體用黏荽M替 (、充劑為二氧切。…膑，其中，上述⑹無機填 士 [6]或[7]之半導體用黏著薄膜，其中，相對於⑽ 置份之上it⑹無機填充劑以外之樹脂組成物，上述⑹ 無機填充劑之添加量為5重量份以上且1〇〇重量份以下。 [9]如[1]至[8]中任—項之半導體用黏著薄膜，其中， 其進而含有（D)偶合劑。 ⑽如m之半導體用黏著薄膜，其中，相對於⑽重 置伤之樹脂組成物，上述（D)偶合劑之含 t以上且10重量份以下。 里里忉 [11]如[1]至[1〇]中任一項之半導體 上述半導體用黏著薄膜具有切割片功能。 叫-種何《置，其特徵在於：使用如⑴至⑴] :任一項之半導體用黏著薄膜’積層有2段以上半導體元 件0 (發明效果） 本發明提供一種半導體用&amp; | 1 + 述半導體_⑽物以及半㈣裝置，上 、、係·於積層有多段半導體元件之半導 97106760 9 200844203 ，裝置中’即便打線接合步驟需要更多時間，使得至封入 =封=為正之半導體用黏著薄膜所經受之熱歷程變長，於 ==步驟中，對基板表面凹凸之填埋性亦優異者。 【貫施方式】 以下’對本發明之半導體用黏著薄膜進行說明。 ^發明之半導體用黏著薄膜係：於將使用直徑為_ 之：f反、於阶下、以1 Hz之頻率、施加3_pa 以應力時所產生的剪切應變量設為r &lt;情況下，自測 疋開始後10分鐘至2小時為止，、黑？ 丁、+、4 ,、 _著_。 ^止献下料⑴的半導體 〇. 10^ r ^ 0.30 ⑴ 於使用習知之熱硬化型半導體用黏著薄膜來製作積層 有2段以上半導體元件之半導體裝置的情況下，存在有黏 著界面容易產生龜裂等可靠性方面問題。其原因歸咎於在 +導體元件與佈線基板之界面附近產生間隙之現象，並 c ^，於製作具有積層2段以上半導體元件之構造之半導體 裝置的情況下，可更顯著地得到確認。於製作積層有2段 以上半導體元件之半導體裝置的情況下，需要2次以上‘ 以在半導體元件與佈、線基板之間進行電性接合的打線接 合步驟，故而與半導體元件僅為丨段之情況相比， 合步驟需要更多時間。 由於打線接合步驟通常於丨“艺至l75〇c之溫度下進 行’故而熱硬化型_導體用黏著薄膜由於其熱歷^進行 硬化反應。因此，與如上所述半導體元件僅為丨段之情況 97106760 10 200844203 相比’具有積層有2段以上半導體元件之構造的半導 置，於打線接合步驟中經受較長之熱歷程，故而於打線接 δ步驟中，半導體用黏著薄膜發生硬化，導致封 =流^下降。因此可認為’由於在封人密封材時無法 恰到好處地填埋佈後美才矣 …… 板表面之凹凸’並殘留形成間隙 (工隙），攸而導致半導體裝置之可靠性劣化。 續認為，於封人密封材時無法恰到好處地填埋佈 面之凹凸的原因在於’半導體用黏著薄膜由於打 相生硬化’從而導致剪切應變量 ;、入饴封材時之負載而變小， 化型半導體用黏著薄膜於Π5γ下敍步田。之”、、硬 m树自 甘物於175 C下熱處理2小時後的剪切 應雙置r ’其結果r =0.06左右。 ( :::發現有如下效果’藉由將製作具有積層有2段以 件之構造的半導體裝置時之通常封入密封材 =熱歷程’即175t：、1〇分鐘至2小時 切應…，設定成較習知之剪切應變量： 石足夠兩的〇 1 0 J；』μ 0 n Q n、，γ · 且0·30以下，而於封入密封材步驟 “導體;填充佈線基板表面之凹凸’從而提 應變量&quot;❿可藉由下述方式測定:將 達到ion 额切斷成25麵25贿，並重疊以使厚度 直徑為川“，以此作為樣品’於175〇C之怔溫下，使用 剪廊、：故Q _之平仃板’對上述樣品施以頻率為1 HZ、 &quot;’、、000匕之剪切力，使用作為黏彈性測定裝置之 97106760 11 200844203 流變計加以測定。 圖1係示意性表示於175t之怪溫下施加剪切力時， 發明之半導體用黏著薄膜自測定開始之剪切應變 ::日^間⑴的關係、之圖。由圖1可知，習知之熱硬化型半 導體用黏著薄膜如虛線所示，具有於敎開始》1〇分鐘 (/厂至2小時（r 2,）為止之期間（T1〜T2)，半導體用黏 者溥膜由於熱歷程而產生之剪切應變量之變化較大的 性。相對於此可知，本發明之半導體用黏著薄膜如實線所 不’具有自測定開始後10分鐘（rl)至2小時（口 :期間(T1〜T2)’半導體用黏著薄膜由於熱歷程而產生之 男切應變量之變化較小的特性。 自測定開始後1 〇分鐘至2小時之區域内，本發明之半 導體用黏著薄膜之剪切應變量為G.1G以上且U0以下， 幸乂j土為12以上且〇. 25以下，特佳為^ 以上且〇. 由使上述¥切應變量處於上述範圍内，可使封入 =代半導體用黏著薄膜之流動性良好，X，可抑制 +V體元件由於封入壓力而產生之偏移。 /發明之半導體用黏著薄膜可藉由使構成半導體用黏 者=之樹脂組成物含有⑷（甲基）丙烯酸醋共聚物、及 B)j4(曱基）丙烯酸酯共聚物不同之熱塑性樹脂，而使剪 切應變量r處於特定範圍内。 ^體=言 '，可藉由適當調整(a)(m)丙烯酸酯共聚物 性以及與（A)(甲基）丙烯酸醋共聚物相比熱時彈 乂间'现動性較尚的（b)與（甲基）丙烯酸酯共聚物 97106760 12 200844203 不同之熱塑性樹脂之種類及調配量，而使剪切應變量r 處於特定範圍内。 首先’對構成半導體用黏著薄膜之樹脂組成物的各成分 進行說明。再者，各成分可使用一種化合物，亦可將多種 - 化合物組合使用。 本發明之（A)(甲基）丙稀酸酯共聚物較佳為（甲基）丙稀 酸酯單體與其他單體之共聚物，（A)(甲基）丙烯酸酯共聚 r物特佳為含有具有環氧基、羥基、羧基、腈基等之化合物 的（甲基）丙浠酸酯共聚物。藉此，可進一步提升對半導體 元件等黏附體之密接性。 *作為（甲基）丙烯酸酯單體，可舉出··丙烯酸甲酯、丙烯 酉夂乙酯等丙烯酸酯，·甲基丙烯酸甲酯、甲基丙烯酸乙酯等 甲基丙烯酸醋；具有環氧丙醚基之甲基丙烯酸環氧丙醋； 具有羥基之甲基丙烯酸羥酯、甲基丙烯酸2_羥基乙酯，· 具有羧基之丙烯酸、甲基丙烯酸；具有醯胺基之ν，ν-二 I甲基丙烯醯胺；具有腈基之丙烯腈等。 該等中，特佳為使用含有具有羧基之單體單位之（甲基） 丙，酸酯共聚物。藉此，與作為半導體元件之界面之石夕間 的2性提高，故而可提升半導體封裝之可靠性。 、/尤製作具有高玻璃轉移溫度之硬化物之觀點而言，具有 2基之化合物之含量例如為⑴(甲基)丙烯酸醋共聚物總 ^0.5莫耳%以上’較佳為1莫物上。又，就進一 二二黏者薄膜之保存性之觀點而言，具有㈣之化合物 3里例如為（Α)(甲基）丙烯酸酯共聚物總體之10莫耳％ 97106760 13 200844203 以下，較佳為5莫耳％以下。 由於（A)(甲基）丙烯酸酯共聚物之玻璃轉移溫度低，故 而可藉由將其調配至樹脂組成物中，而提升初始密接性。 . 其中，所謂初始密接性，係指使用半導體用黏著薄膜將 '半導體元件與支持基材黏著時之初始階段的密接性，表示 對半導體用黏著薄膜進行硬化處理前之密接性。 就提升黏著薄膜之成膜性之觀點而言，（A)(甲基）丙烯 Γ酸酯共聚物之重量平均分子量例如為10萬以上，1 更佳為 20萬以上。又，就將製作黏著薄膜時之樹脂溶液保持適 度黏度，並確保封入密封材時之半導體用黏著薄膜之流動 性，觀點而言，（A)(甲基）丙烯酸酯共聚物之重量平均分 子量例如為200萬以下，更佳為1〇〇萬以下。 刀 就抑制黏著薄膜黏著得過於牢固，從而進一步提升操作 性之觀點而言，（A)(甲基）丙烯酸酯共聚物之玻璃轉^ 度例如為（TC以上，較佳為代以上。又，就進一步提升 C低溫下之黏著性之觀點而言，（A)(f基）㈣酸自旨共聚物 之玻璃轉移溫度例如為3〇〇c以 ::發明之⑻與(甲基㈣酸醋共聚二:下之熱塑 本2 f於：提高對半導體元件進行_接合後之 經由半㈣之熱時彈性模數’從而使封入密封材時 X V體用黏者薄膜而固定之半導體元件可承受住封 ^力’又’確保封人密封材時之半導體用黏著薄膜之流 作為（B)與（甲基）丙稀酸酯共聚物不同之熱塑性樹脂之 97106760 14 200844203 八體例 了舉出本氧樹脂、丁腈橡膠（ni tr i 1 e-butadiene rubber)、丁醛樹脂、聚醯胺樹脂、聚醯亞胺樹脂，其等 可使用一種或將兩種以上混合使用。 該等中，較佳為使用苯氧樹脂，苯氧樹脂除上述效果以 外，與丙烯酸酯共聚物之相容性良好，故而可製作外觀較 佳之薄膜，並且可提升與有機基板之密接性。 構成本發明之半導體用黏著薄膜之樹脂組成物中，（B) :、（甲基）丙烯酸酯共聚物不同之熱塑性樹脂之調配量，相 對於10 0重畺伤之上述（A )(甲基）丙烯酸酯共聚物，較佳 為〇· 5重1份以上且3〇重量份以下，特佳為3重量份以 上且20重置份以下。藉由使熱塑性樹脂之調配量處於上 述範圍内可兼顧半導體黏著薄膜之外觀及封入密封材時 之流動性。 本叙明較佳為由實質上不含熱硬化性樹脂之樹脂組成 物所構成的半導體用黏著薄膜。具體而言，所謂實質上不 3熱硬化性;^脂之樹脂組成物，係指相對於樹脂組成物總 體，2硬化性樹脂之含量為3重量％以下者。再者，若^ 3重里1以下，則可含有環氧樹脂，目的在於提升與佈線 基板之密接性，又，提升半導體用黏著薄膜之耐熱性，從 而確^半導體裝置之可靠十生，熱硬化性樹脂之含量較佳為 2 以下’特佳為1重量％以下。藉由使熱硬化性樹脂 之&quot;量處於上述範圍内，則熱硬化性樹脂由於打線接合步 :,:歷耘而發生之硬化反應較少，故而可抑制封入密封 材％半導體用黏著薄膜之流動性下降。 97106760 15 200844203 作為熱硬化性樹脂，可舉出：紛㈣清漆樹脂、甲 酸清漆樹脂、雙紛A酴搭清漆樹脂等酚醛清漆型紛樹p. 未改質之可溶祕盼樹脂、由桐油等改質之油改質可溶曰齡 醛酚樹脂等可溶酚醛型酚樹脂等酚樹脂；雙酚A型環 脂、雙酚F型環氧樹脂等雙酚型環氧樹脂；酚酚醛 環氧樹脂、甲盼㈣清漆型環氧樹脂等祕清漆型 脂；聯苯型環氧樹脂、對苯二紛型環氧樹脂、二苯^ 環氧樹脂、三紛甲烧型環氧樹脂、含三傭之環氧樹脂、 二環戊二烯改㈣型環氧樹脂、⑽型環氧樹脂、紛芳尸 _乳樹脂、萘酚芳烷型環氧樹脂等環氧樹脂；脲(尿素； 樹脂、三聚氰胺樹脂等具有三姆之樹脂；聚胺基甲酸乙 ㈣=聚石夕氧樹脂、具有苯并啊環之樹脂、氰酸 月曰、具有紛性經基之（甲基）丙烯醯化盼祕清漆樹脂、乙 =旨樹脂、丙婦酸胺基甲酸乙醋樹脂等丙婦酸酉旨類、不飽 樹脂、鄰苯二甲酸二烯丙醋樹脂、順丁稀二酸亞胺 树月曰^較佳為使用祕清漆型環氧樹脂 脂、聯苯型環氧樹脂之軌樹脂。 藉由使用齡經清漆型環氧樹脂，可提高半導體用 溫度，又，可使半導體用黏著薄膜之 二數降低。又，稭由使用萘驗型環氧樹脂，可提高半 黏著薄膜之玻璃轉移溫度，又，可提升黏著界面之 構成本發明之半導體用黏著薄膜之樹脂組成物 有（〇無機填充劑。（C)無機填充劑具有下述功能：可提高 97106760 16 200844203 將半導體元件與佈線基板埶壓接人；^ 1 膜之敎時彈性握叙接口後之+導體用黏著薄 住密封材之封入壓力… τ 了入-封材¥可承受 •用黏著薄膜之、^f 將封入密封材時之半導體 例如，可舉出：銀、二氧化^ 料（c)無機填充劑， 等。嗜算中化技一虱化鈦、二氧化矽、雲母、氧化鋁 填充料，可化石夕填充料。藉由使用二氧化石夕 黏著薄膜，減小半導散性較佳且外觀較佳的 層有2段以上缚广線膨脹係數，減小積 曲，、隹而泠體兀件之情況下的半導體元件之翹 一 σ提升製造黏著薄臈時之操作性。 二氧化矽填充料有形狀上破 化石夕，就在半導體用㈣切士减石夕及仏融二氧 佳為炫融二氧化r夕缚膜令均勾分散之觀點而言，較 之==”=+導體用#著薄膜中凝集，並提升外觀 ° ()無機填充劑之平均粒徑例如為〇 Q1 以上，較佳為〇 !❹以，v 灼如為o.oi “ 劑自黏著薄膜^^ 又’就切實地抑制無機填充 言，⑹m犬Λ 在熱壓接合時損壞晶片之觀點而 為5==紙平均粒娜為^以下，較佳 ^無機填充劑之含量並無特別限定，相對於⑽ 上，較佳為物’例如可為5重量份《 接合後膜之:體元件與佈線基板熱&gt;1 者㈣之熱時彈性模數，可使半導體元件於封 97106760 17 200844203 之封入壓力。又，相對於100重 無機填充劑之含量例如可為1 〇 〇 量份以下。藉由使（C)無機填充 ，而可將封入密封材時之黏著薄 入密封材時承受住密封材 1份之該樹脂組成物，（c) 重量份以下，較佳為80重 劑之含量處於上述範圍内 膜之流動性保持為適度。 構成本發明之半導體用黏著薄膜之樹脂组成物可含 (D)偶合劑。藉此’可進—步提升半導體用黏著薄膜
樹脂與黏附體界面之密接性、以及半導體用黏著薄膜中之 樹脂與二氧化矽界面之密接性。 、 作為（D)偶合劑，可舉出矽烷系、鈦系、鋁系等，就盘 作為半導體元件之界面之石夕的密接性之觀點 = 矽烷系偶合劑。 at馬 作為矽烷偶合劑，例如可舉出：乙烯基三氯矽烷、乙烯 基三甲氧基矽烷、乙烯基三乙氧基矽烷、石_(3,4_環氧環 己基)乙基三甲氧基矽烷、7_環氧丙氧基丙基三甲氧基矽 烷、7-環氧丙氧基丙基甲基二甲氧基矽烷、厂曱基丙烯 醯氧基丙基三甲氧基矽烷十曱基丙烯醯氧基丙：曱基 二乙氧基石夕烧、τ-甲基丙烯ϋ氧基丙基三乙氧基石夕烧、 ΝΚ胺基乙基）-r-胺基丙基？基二甲氧基土石夕燒、 N-万（胺基乙基）-r-胺基丙基三甲氧基錢u (胺基 乙基)-r-胺基丙基三乙氧基矽烷、卜胺基丙基三甲氧基 矽烷、T-胺基丙基三乙氧基矽烷、.笨基_ 三甲氧基矽烷、r-氯丙基三曱氧基矽烷、贼基二基二 甲氧基我、3-異氰酸醋基丙基三乙氧基石夕烧、：丙二醯 97106760 18 200844203 乳基丙基三f氧基石夕燒，該等既可 上混合使用。 早獨使用亦可將兩種以 就進一步提高密接性之觀點 相對於100重量份之樹脂 ^2)偶合劑之調配量 上，較佳為（M重量份以上又物例如可為0·01重量份以 氣）或空隙之觀點而言， 2制產生分解氣體（脫 :=)偶合劑之調配量例如可為：二 5重量份以下。 里里知以下，較佳為 導：用U賦二提高暫時黏著性，構成本發明之半 v體用黏者溥臈之樹脂組成物千 體之（E)酚樹脂等。 3有作為低为子量單 作為（E)酚樹脂，例如可裹 紛—脂、齡芳燒(包;申苯:紛：清漆樹脂、甲驗 脂、萘紛芳院樹脂、三紛甲基、伸聯苯基骨架）樹 等。該等既可單獨使用，亦了I θ、一裱戊二烯型酚樹脂 , ^ τ,亦可將兩種以上混合使用。 再者，為了凋整操作性或物 黏著薄膜之樹脂組成物本發明之半導體用 外之成分。 成物中了適當含有除上述(A)〜⑻以 本::之：導體用黏著薄膜例如可藉由下 述樹脂組成物溶解於甲基乙基酮、丙_、甲苯、 ^甲土甲盤等溶劑中，形成為清漆狀態，之後，使用刮刀 脫模片上，乾㈣，除;H凹㈣刷塗佈機等塗佈於 上过半導體用黏者薄膜之厚度並無特別限定，較佳為3 97106760 19 200844203 若广二上广以下’特佳為5…上7…以下。 1 内’則可特別容易控制厚度精度。 -述==薄關予切割片功能之1例’可舉出下 •著上述脫模片並經乾燥而得之、附有脫模片之黏 膜：ιΓ、： 反之面的黏著薄膜層上貼附保護薄 二;及黏著薄膜層半切穿。進而，將由』 接劑層及基材薄膜所構成 ^ f片之具有黏著薄膜#之而Α ^片之黏接劑層、上述脫模 ' 、a 的相反侧之面進行貼合，剝離上 ==:=此’獲得依序由基材薄膜、黏接劑層、脫 桓片及黏者薄膜層所構成之具切割片功能之黏著薄膜。 進行戈明^使用本《明之半導體用黏著薄膜之半導體震置 本發明之半導體裝置係使用本發明之半導 =將半導體元件與引線框、半導體元件與佈線基板者半寻 (/ ¥-70件與半導體兀件進行黏著而形成之半導體裝置。作 為本發明之一實施態樣，例如係如下半導體裝置，其係包 3具備第1半導體元件及佈線基板，並將第i半導體元件 之電極面之相反侧的面與佈線基板之電極面對向配設而 形成之半導體電子零件，且使用本發明之半導體用黏著薄 膜’將第1半導體元件與佈線基板黏著而形成者。又，作 為其他實施態樣’包括如下半導體裝置，其係於上 體農置中’包含於上述第】半導體元件之電極面上進而積 層第2 + $體元件而形成之多段j隹疊型+導體電子零 97106760 20 200844203 :元mt:明之半導體用黏著薄膜，將上述第1半導 述多段堆疊型半導體電子烫：;'而形成者。亦可為於上 辦开杜盘欲姑甘 件中，使用僅黏著有第1半導 _ 、，土板之本發明之半導體用黏著薄膜者。本 明之半導體裝置只要為估田士々 苦得腰者本發 膜，將半導4 之半導體用黏著薄 _ -们 牛14引線框、半導體元件與佈線基板、半 v體疋件與半導體元件黏著者，則並無特別限定。 圖“2係表示作為本發明之—實施形態之使用半導體 黏者溥膜的半導體裝置之構成的概略剖 說明中，對相同要素標註相 冉者圖式 邳丨j付唬亚將重歿之說明省略。 裝請於佈線基板1〇1上依序積層有： 弟1 + ¥體疋件105、第2半導體元件1〇9、第3 疋件⑴、第4半導體元件117以及第5半導體㈣⑵， 广=各+導體元件藉由金屬線125而將半導體元件之 ^垃I用电極127、與佈線基板之打線接合用電極129 以^ 〇又’ δ亥等各半導體元件以及金屬、線125由密封 材131掩埋，並形成被保護狀態。χ，形成如下構造，於 佈線基板101之背面’設置有發揮外部連接端子之功能之 多種外部連接電極123。 圖^所示之半導體裝置100中，第i半導體元件ι〇5之 具有電極之面的相反側之面與佈線基板101之電極面，以 對向之狀態而經由第i半導體用黏著薄膜1〇3黏著，第工 半導體元件1G5之上表面（電極面）與第2半導體元件ι〇9 之下表面（具有電極之面的相反側之面），以對向之狀態而 97106760 21 200844203 經由第2半導體用黏著薄膜107黏著，第2半導體元件 109之上表面（電極面）與第3半導體元件113之下表面（具 有電極之面的相反侧之面），以對向之狀態而經由第3半 導體用黏著薄膜111黏著，第3半導體元件113之上表面 (電極面）與第4半導體元件117之下表面（具有電極之面 的相反侧之面），以對向之狀態而經由第4半導體用黏著 薄膜115黏著’第4半導體元件117之上表面（電極面) 與第5半導體元件121之下表面（具有電極之面的相反侧 之面），以對向之狀態而經由第5半導體用黏著薄膜ιΐ9 黏著。 又，第1半導體元件1〇5、第2半導體元件1〇9、第3 半導體元件113、》4半導體元件117以及第5半導體元 件121分別藉由金屬、線125,而將各半導體元件之打線接 合用電極127與佈線基板1〇1之打線接合用電極129導通 c再者，雖無特別限定，但較佳為積層於上段之半導體元 件之大小比下段半導體元件小，如較佳為第2半導體元件 J於第1半導體兀件1〇5 ’就提升半導體元件之積體 畨又之方面而言，較佳為將上段半導體元件配設在下段半 導體元件之大致φ止走 ^ k人 中央處。又，與金屬線125相接合之各半 钟-几件之打線接合電# 127較佳為設置於各半導體元 ’於積層有多段半導體元 之熱歷程之情況下，若使 如上述半導體裝置100所示 件，且打線接合步驟中經受較長 97106760 22 200844203 用本發明之半導體用黏著薄膜作為第1半導體用 膜H)3,則可在封入密封材時抑制半導體用黏著薄膜對佈 線基板表面之凹凸的填埋不良，因此可抑制半導體裝置 ⑽之回銲步驟中之半導體用黏著薄膜的剝離或封裝龜 裂。 本實施形態中，展示了積層有5段半導體元件之半導體 裝置100的構it，但半導體元件之積層數並無限制，又， 亦可將本發明之半導體用黏著薄膜與習知之半 著薄膜併用。 &gt; 下面，對半導體裝置之一製造方法進行說明。 圖3係製造半導體裝置之流程圖。 t圖3所示，半導體裝置係藉由下述步驟來製造··暫時 黏著步驟，其係使用半導體用黏著薄膜，將半導體元件與 佈線基板、或半導體元件彼此之間暫時黏著；打線接合步 秫，、係將半$體元件與佈線基板電性連接；密封步驟， 其係使用密封樹脂將半導體元件及接線密封；以及硬化步 驟，其係使密封樹脂及黏著薄膜硬化。 以下，對各步驟加以說明。 (暫時黏著步驟） 於暫，黏著步驟中’具體而言，依序將佈線基板、半導 一-钻著薄膜、半導體元件積層，藉由熱壓接合將半導體 m布線基板暫時黏著。此處，半導體用黏著薄膜既可 著於半導體元件上，亦可預先黏著於佈線基板上。 “暫日_例如可使用晶片接合裝置(AD898 ASM製造）， 97106760 23 200844203 =紙〜靴之溫度Μ㈣負載下 =㈣嶋合。此時，為防止損壞半導體元件·:： 佳為於低溫、低負载下，淮 孕乂 今骽用黏者溥膑將佈線基板表 凹凸完全填充，即便佈線基板與半導 留有空隙亦無妨。 ^體用4者相之間殘 (打線接合步驟） 2線接合步驟中，使用接線將半導體元件之電極 線，板之電極電性連接。例如’可使用打線接合裳置 ASM製造），於靴〜綱。c之溫度下進行該接 υ ―於積層有2段以上半導體元件之半導體裝置中 =段t導體元件之打線接合步驟後，對第2段以後之半丁 丄W ’亦以相同之方式在前面經暫時黏 =導體元件上’重複實施暫時黏著步驟、進而二 (密封步驟） 於密封步驟中，使用密封樹脂進行密封， 件it 提升絕緣性及防潮性。例如於如下密封條
^成形機，於150〜纖、50〜_ W :下進行密封。又，於使用密封樹脂進行 5化’使半導體用黏著薄膜軟化，從: 之凹凸完全填充。 于怖、·泉基板表面 97106760 24 200844203 且=半導體用黏著薄膜，積層多段半導體元件， :者溥膜會產生硬化，流動性下降，故而有時會 膜埋，線基板表面之凹凸的問題。若使 臈，則可抑制上述問題。 '者4 (硬化步驟） 化^私中，將岔封樹脂正式硬 黏著薄膜正式硬化。夢此，可们9 ^ j 了料¥體用 猎此了獲仵取終之半導體裝置。 輝化I件只要為密封樹脂以及半導體用黏著薄膜產生 2阶之乂件則並無特別限^，例如，較佳為溫度：100〜 】，日:間：5〜300 *鐘之條件’特佳為溫度：120〜 U〇C，時間：3〇〜24()分鐘之條件。 、匕種二驟’最終可獲得如圖2所示之半導體裝置100。 再者，半導體裝置之構成並不限定於例示者，只要具有 使用半$體用黏著薄膜將半導體元件與被黏著構件黏著 的構造’則可為任意半導體裝置。 以上，參照圖式對本發明之實施形態進行了說明，但該 專係本發明之料，亦可剌±相外之各種構成。 以下根據實施例及比較例對本發明進行更詳細地說 明奋=本發明並不限定於此。再者，表1表示以下所說明 之貝鈿例以及比較例中各黏著薄膜之成分調配比以及評 價結果。 (實施例） (實施例1) 97106760 25 200844203 (黏著薄膜樹脂清漆之製備） 於甲基乙基酮（MEK，methyl ethyl ketone)中溶解如下 物質而獲得樹脂固形分為2〇%之樹脂清漆，即，1〇〇重量 份之作為（甲基）丙烯酸酯共聚物的丙烯酸酯共聚物（丙烯 酸乙酯-丙烯酸丁酯—丙烯腈_丙烯酸—甲基丙烯酸羥基乙 酯共聚物，長瀨化成（NagasechemteX)公司製造， SG-708-6DR，Tg : 6°C，重量平均分子量：500,0〇〇)、 10重量份之作為與（曱基）丙稀酸酯共聚物不同之熱塑 陡樹知的笨氧樹脂（JER1256，Mw : 50000，日本環氧樹脂 (JaPan Epoxy Resins)公司製造）、 78重置份之作為無機填充劑之球狀二氧化矽（SE2〇5〇， 平均粒徑為〇· 5 μπι，Admatechs公司製造）、 2重1份之作為偶合劑的r —環氧丙氧基丙基三甲氧基 矽烷（KBM403E，信越化學工業公司製造）、以及 重量份之作為酚樹脂的（pR—HF —3，羥基當量為1〇4 g/0H基，住友電木（Sumitomo Bakelite)公司製造）。 (黏著薄膜之製造） 使用刮刀式塗佈機，將由上述方法所獲得之樹脂清漆塗 佈於作為基材薄膜（〗）的聚對笨二甲酸乙二酯薄膜（杜邦 帝人（Tei jin Dupont)公司製造，料號為purex A54，厚 度為38 /zm)上後，於i5〇°c下乾燥3分鐘，而獲得厚度 為25 // m之黏著薄膜。 (切割片之製造） 使用擠出機，將包含60重量份之HYBRAR、4〇重量份之 97106760 26 200844203 聚丙烯的Cleartech CT-H717(可樂麗（Kuraray)製造）形 成厚度為100 /zm之薄膜，並對表面進行電暈處理，以此 作為基材薄膜（Π )。繼而’將使5 0重量份之丙烯酸2 一乙 ， 基己酯、1〇重量份之丙烯酸丁酯、37重量份之乙酸乙稀 醋、3重量份之曱基丙烯酸2-羥基乙酯共聚合而獲得的重 量平均分子量為500000之共聚物，以使乾燥後之厚度達 到10 //m之方式塗佈於經剝離處理的厚度為38 之聚 ^酯薄膜上，於8(TC下乾燥5分鐘，而獲得黏接劑層。: '後，將黏接劑層層壓於基材薄膜（π )之電暈處理面上，庐 得依序積層有基材薄膜（Π)、黏接劑層、以及聚酯薄膜= 切割片。 ' (具切割片功能之黏著薄膜之製造） 於塗佈有黏著薄膜之基材薄膜（j)的黏著薄膜層上貼 附保護薄膜，繼而，將基材薄膜（1)及黏著薄膜層半切穿 成直徑為220 mm之大小。進而，將聚醋薄膜自以基材^ I膜（Π)、黏接劑層、以及聚酯薄膜所構成之切割片中剝 離，將黏接劑層與基材薄膜⑴相貼合，剝離保護薄膜 错由亡述操作’可獲得依序由基材薄膜⑴、黏接劑層、 基材薄膜（I )以及黏著薄膜層所構成的具 (175°C下之剪切應變量r之测定方法） 斷1=例比較例中所製作之半導體用黏著薄膜切 成 25 Μ之大小，、繼而，將多片重疊，使半導轉 用黏著_之厚度達到_ “㈣獲得樣品。對所 97106760 200844203 得之樣品，使用黏彈性測定裝置（HAAKE股份有限公司製 造Rhe〇Stress RS—150)，於之恆溫下，使用直徑為 20 mm之平行板，施以頻率為！ Hz、剪應力為之 與切，測定自測定開始丨〇分鐘後以及2小時後之剪切應 變量7&quot;。 (黏著後之晶片切變強度之測定方法） 將實施例以及比較例中所獲得之半導體用黏著薄膜，夾 持於4x4 mm大小之矽晶片（厚度為55〇 與塗佈有阻 銲劑（太陽油墨製造公司製造；商品名：AUS3〇8)的雙順丁 烯二醯亞胺-三畊基板之間，於13(rc、5 N下進行丨秒鐘 熱壓接合，於175°C下進行2小時熱處理，將經上述處理 而得之樣品於260°C之熱板上保持20秒鐘，之後，使用 拉壓力計，以0.5 mm/niin之速度施加剪應力時之剪切強 度’作為晶片切變強度。 (半導體裝置之製造） 按下述順序來製造圖4所示之半導體裝置2〇〇。 使具切割片功能之黏著薄膜135之黏著薄膜層、與8英 吋、200 之晶圓之背面相對向，且於6(Γ(：之溫度下進 仃貼附，獲得貼附有具切割片功能之黏著薄膜135的晶 圓。 其後，使用切割機，於主軸轉速為30,000 rpm，切斷 速度為50 mm/sec之條件下，將該貼附有具切割片功能之 黏著薄膜的晶圓切割（切斷）成半導體元件137之尺寸，即 10 mmxio mm見方。繼而，具切割功能之晶粒黏著薄膜自 97106760 28 200844203 二：:口： ’並於基材薄膜⑴與黏著劑層之間剝離，從而 獲传附有黏著劑層（黏著薄膜135)之半導體元件Η? = 秒鐘之條件，將該附有黏著劑層之 Γ ¥體7〇件137(10晒1〇 mm見方）壓接於塗佈有阻鲜劑 (太陽油墨製造公司製造；商品名：觸⑻的雙順丁婦二 醯亞胺-三脂佈線基板133(電路高度差為5〜ι〇㈣） ^ ’將半導體元件與雙順n亞胺—三4佈線基板暫 日寸黏者。之m積層多段半導體元件時之打線接合步 驟之熱歷程，於175t：下進行10分鐘熱處理，或於175。〇 下進行2小時熱處理。進而，使用低壓轉注成形機，於成 形溫度為175t，壓力為70 kg/cm2，硬化時間為2分鐘 之條件下，用密封樹脂（住友電木股份有限公司製造， E—ME-G770)加以密封，於175。〇下進行2小時熱處理:使 密封樹脂139完全硬化，而獲得1〇個半導體裝置。 (佈線基板高度差填充性） 〇 對於佈線基板高度差填充性，係對使用各實施例以及比 較例中所獲得之黏著薄膜而製造的各半導體裝置，利用掃 描型超音波探傷儀（SAT，Scanning Ac〇ustic T⑽ograph)，以如下方式來評價半導體用黏著薄膜對佈線 基板上之高度差之填充率。 aa :填充率為1〇〇%者 bb :填充率為80%以上且未達1〇0%者 cc :填充率為40%以上且未達80%者 dd ··填充率未達40%或黏著薄膜内整個面成空隙狀者 97106760 29 200844203 (耐龜裂性） 對於财龜裂性’係對使用各實施例以及比較例中所獲得 之黏著薄膜而製造的各半導體裝置進行85t/60%RH/168 小時吸濕處理後，進行3次26(TC之紅外線（IR，Infrared Ray)回銲，並利用掃描型超音波探傷儀（SAT)，以如下方 式進行評價。 aa : 10個中有〇個產生龜裂 bb : 10個中有1個以上且3個以下產生龜裂 cc : 10個中有4個以上且9個以下產生龜裂 dd : 10個中有1〇個產生龜裂 (實施例2) (黏著薄膜樹脂清漆之製備） 使用100重量份之作為（曱基）丙烯酸酯共聚物的丙烯 酸醋共聚物（丙烯酸乙酯—丙浠酸丁酯一丙烯腈—丙烯酸一甲 基丙烯酸經基乙酯共聚物，長瀨化成公司製造， t SG-708-6DR，Tg : 6°c，重量平均分子量：500, 000); 10重量份之作為與（曱基）丙烯酸酯共聚物不同之熱塑 性樹脂的本氧樹脂（JER1256，Mw : 50000，日本環氧樹脂 公司製造）； 78重量份之作為無機填充劑的球狀二氧化石夕（se2〇5〇， •平均粒徑為〇· 5 // m，Admatechs公司製造）；以及 2重夏份之作為偶合劑的r -環氧丙氧基丙基三曱氧基 矽烷（KBM403E，信越化學工業公司製造）。 除製備黏著薄膜樹脂清漆以外，以與實施例1相同之方 97106760 30 200844203 式進行評價。 (實施例3) (黏者薄膜樹脂清漆之製備） 使用100 ^里份之作^ (甲基）丙烯酸酯共聚物的丙烯 • I S曰/、水物（丙烯酸乙酯-丙烯酸丁酯-丙烯腈—丙烯酸一曱 基丙烯i欠羥基乙酯共聚物，長瀨化成公司製造， SG 708 6DR ’ Tg · 6°C，重量平均分子量：500, 000); 30重置份之作為與（曱基）丙烯酸酯共聚物不同之熱塑 性樹脂的苯氧樹脂（JER1256，Mw : 5〇〇〇〇，日本環氧樹脂 公司製造）； 78重罝份之作為無機填充劑的球狀二氧化矽（SE2050， 平均粒佐為〇· 5 // m，Admatechs公司製造）；以及 2重罝份之作為偶合劑的τ_環氧丙氧基丙基三甲氧基 矽烷（ΚΒΜ403Ε，信越化學工業公司製造）。 除製備黏著薄膜樹脂清漆以外，以與實施例丨相同之方 I式進行評價。 (實施例4) (黏著薄膜樹脂清漆之製備） 使用100重量份之作為（甲基）丙烯酸酯共聚物的丙烯 酸醋共聚物（丙烯酸乙酯—丙烯酸丁酯—丙烯腈—丙烯酸一曱 •基丙烯酸羥基乙酯共聚物，長瀨化成公司製造， SG-708-6DR，Tg : 6°C，重量平均分子量：500, 000); 〇· 5重量份之作為與（甲基）丙烯酸酯共聚物不同之熱塑 性樹脂的苯氧樹脂（JER1256，Mw : 50000，日本環氧樹脂 97106760 31 200844203 公司製造）； 78重量份之作為無機填充劑的球狀二氧化矽（SE2〇5〇， 平均粒徑為0· 5 // m，Admatechs公司製造）；以及 2重量份之作為偶合劑的環氧丙氧基丙基三曱氧基 石夕烧（KBM403E ’信越化學工業公司製造）。 除製備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行評價。 (實施例5 ) (黏著薄膜樹脂清漆之製備） 使用100重量份之作為（甲基）丙烯酸酯共聚物的丙烯 酸酯共聚物（丙烯酸乙酯—丙烯酸丁酯-丙烯腈_丙烯酸—甲 基丙稀酸經基乙酯共聚物，長瀨化成公司製造， SG-708-6DR，Tg : 6°C，重量平均分子量：5〇〇, 〇〇〇); 10重里知之作為與（曱基）丙烯酸醋共聚物不同之熱塑 性樹脂的苯氧樹脂（JER1256，Mw : 50000，日本環氧樹脂 公司製造）； 78重1份之作為無機填充劑的球狀二氧化矽（SE2050， 平均粒徑為0·5 #m，Admatechs公司製造）； 2重里份之作為偶合劑的γ _環氧丙氧基丙基三曱氧基 矽烷（ΚΒΜ403Ε，信越化學工業公司製造）； 4重量份之作為酚樹脂的（PR-HF-3，羥基當量為1〇4 g/ΟΗ基，住友電木公司製造）；以及 6重里份之作為環氧樹脂的鄰曱酚酚醛清漆型環氧樹脂 (E0CN-1 020-80 ’環氧當量為2〇〇 g/eq，日本化藥公司製 97106760 32 200844203 造）。 除製備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行評價。 - (實施例6) •(黏著薄膜樹脂清漆之製備） 使用100重量份之作為（曱基）丙烯酸酯共聚物的丙烯 酸酯共聚物（丙烯酸乙酯—丙烯腈-甲基丙烯酸環氧丙酯 -N，N-二甲基丙烯醯胺共聚物，長瀬化成公司製造， SG-80HDR，Tg : 1(TC，重量平均分子量：35〇 〇〇〇); 10重量份之作為與（曱基）丙烯酸酯共聚物不同之熱塑 性樹脂的苯氧樹脂（JER1256，Mw ; 50000，日本環氧樹脂 公司製造）； 78重里份之作為無機填充劑的球狀二氧化矽（SE2O50， 平均粒徑為〇· 5 // m，Admatechs公司製造）；以及 2重置份之作為偶合劑的τ—環氧丙氧基丙基三甲氧基 (矽烷（ΚΒΜ403Ε，信越化學工業公司製造）。 除衣備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行評價。 (實施例7) (黏者薄膜樹脂清漆之製備） 使用100重里份之作為（甲基）丙烯酸酯共聚物的丙烯 酸醋共聚物（丙烯酸乙匕 叩敗G自曰-丙烯酸丁酯—丙烯腈_丙烯酸一甲 基丙細酸經基乙奸I4 @曰/、承物，長瀨化成公司製造， SG-708-6DR，Ts*· fit ^ ^ 丁 匕 §· 6C ’重置平均分子量· 5〇〇,〇〇〇); 97106760 33 200844203 12重量份之作為與（曱基）丙烯酸酯共聚物不同之熱塑 性樹脂的苯氧樹脂（JER1256，Mw ·· 50000，日本環氧樹脂 公司製造）；以及 • 78重量份之作為無機填充劑的球狀二氧化矽（SE2〇5〇， •平均粒徑為〇· 5 // m，Admatechs公司製造）。 除製備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行評價。 (實施例8) ( (黏著薄膜樹脂清漆之製備） 使用100重量份之作為（甲基）丙烯酸酯共聚物的丙烯 酸S曰共聚物（丙稀酸乙酯—丙烯酸丁酯—丙烯腈—丙烯酸一曱 基丙埽酸經基乙酯共聚物，長瀨化成公司製造， SG-708-6DR，Tg : 6°c，重量平均分子量：5〇〇 〇〇〇); 28重篁份之作為與（甲基）丙烯酸酯共聚物不同之熱塑 性樹脂的苯氧樹脂（JER1256，Mw : 50000，日本環氧樹脂 ◎公司製造）；以及 2重1份之作為偶合劑的r—環氧丙氧基丙基三甲氧基 矽烷（KBM403E，信越化學工業公司製造）。 • 除製備黏著薄膜樹脂清漆以外，以與實施例丨相同之方 式進 &lt;于評價。 &quot;(實施例9) (黏著薄膜樹脂清漆之製備） 使用100重里份之作為（甲基）丙稀酸酯共聚物的丙烯 酉欠酉曰共♦物（丙烯酸乙酯—丙烯酸丁酯—丙烯腈-丙烯酸〜曱 97106760 34 200844203 基丙烯酸經基乙酯共聚物，長瀨化成公司製造， SG-708-6DR，Tg : 6°C，重量平均分子量：500,000); 10重量份之作為與（曱基）丙烯酸酯共聚物不同之熱塑 性树月曰的本氧樹脂（Pheno-tohto YP-50，Mw : 60000，東 • 都化成公司製造）； 78重量份之作為無機填充劑的球狀二氧化矽（SE2〇5()， 平均粒径為〇· 5 // m，Admatechs公司製造）；以及 ( 2重置份之作為偶合劑的7 -環氧丙氧基丙基三甲氧基 矽烷（KBM403E，信越化學工業公司製造）。 除製備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行操作。 (實施例10) (黏著薄膜樹脂清漆之製備） 使用100重量份之作為（曱基）丙烯酸酯共聚物的丙烯 酸酯共聚物（丙烯酸乙酯—丙烯酸丁酯_丙烯腈_丙烯酸—曱 基丙烯酸羥基乙酯共聚物，長瀨化成公司製造， SG-708-6DR，Tg : 6°C，重量平均分子量：5〇〇, ; 1〇重1份之作為與（曱基）丙烯酸酯共聚物不同之熱塑 性樹脂的丁腈橡膠（NBR)(Nipoll042，曰本瑞翁（Ni卯〇n • Zeon)公司製造）； 78重里伤之作為無機填充劑的球狀二氧化石夕（se2 〇 $〇， 平均粒径為〇· 5 μπι，Admatechs公司製造）；以及 2重量份之作為偶合劑的r -環氧丙氧基丙基三曱氧基 矽烷（KBM403E，信越化學工業公司製造）。 平土 97106760 35 200844203 除製備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行評價。 (實施例11) •(黏著薄膜樹脂清漆之製備） ， 使用10 0重量份之作為（甲基）丙烯酸酯共聚物的丙烯 酸醋共聚物（丙烯酸乙酯—丙烯酸丁酯-丙烯腈—丙烯酸-甲 基丙烯酸羥基乙酯共聚物，長瀨化成公司製造， € SG-708-6DR，Tg : 6°C，重量平均分子量·· 500, 〇〇〇); 10重夏份之作為與（甲基）丙烯酸酯共聚物不同之熱塑 性树脂的苯氧樹脂（JER1256，Mw : 50000，日本環氧樹脂 公司製造）； 78重$份之作為無機填充劑的氧化鋁（A〇5〇9，平均粒 徑為10 // m，Admatechs公司製造）；以及 2重量份之作為偶合劑的r—環氧丙氧基丙基三曱氧基 石夕烧（KBM403E，信越化學工業公司製造）。 (;除製備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行評價。 (比較例1) (黏著薄膜樹脂清漆之製備） 使用100重量份之作為（甲基）丙烯酸酯共聚物的丙烯 酉文酉曰共聚物（丙烯酸乙酯—丙烯酸丁酯—丙烯腈—丙烯酸一甲 基丙烯酸羥基乙酯共聚物，長瀨化成公司製造， SG-708-6DR ’ Tg : 6。(：，重量平均分子量：5〇〇,〇〇0); 1 〇重Ϊ份之作為與（甲基）丙烯酸酯共聚物不同之熱塑 97106760 36 200844203 曰本環氧樹月丨 性樹脂的苯氧樹脂（jER1256，MW : 50000， 公司製造）； 78重里伤之作為無機填充劑的球狀二氧化石夕（SE2〇$〇， 平均粒徑為〇·5 #m，Admatechs公司製造）； 1重置份之作為偶合劑的7—環氧丙氧基丙基三甲氧基 矽烷（KBM403E，信越化學工業公司製造）； 1重量份之作為酚樹脂的（PR-HF-3,羥基當量為1〇4 g/OH基，住友電木公司製造）；以及 重里伤之作為環氧樹脂的鄰甲盼驗酿清漆型環 脂(EOCN—1 020 —80，環氧當量為2〇〇 g/eq，日本 製造）。 ” 、除衣備黏著薄膜樹脂清漆以外，以與實施例1相同之方 式進行評價。 (比較例2) (黏著薄膜樹脂清漆之製備） 重里知之作為（曱基）丙浠酸酯共聚物的丙稀 酯共聚物，長 SG-708 酸醋共聚物（丙烯酸乙酯 基丙烯酸羥基乙酿共
-丙浠酸丁酯~丙烯腈—丙烯酸一曱 聚物，長瀨化成公司製造， 78重里伤之作為無機填充劑的球狀
97106760 ，重量平均分子量：500, 000); 二氧化矽（SE2050， 以冚，Admatechs公司製造）；以及 馬偶合劑的7 -環氧丙氧基丙基三曱氧基 信越化學工業公司製造）。 膜樹脂清漆以外，以與實施例1相同之方 37 200844203 式進行評價。 將各實施例以及比較例之黏著薄膜樹脂清漆之組成以 及評價結果示於表1。再者，表1中，以重量份來表示各 成分之組成。
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Co丄 HIHd 0OO—S0TN003 s wioog卜 5 l^wl^碳 f,f、gl^lg/i-pgAI 衾 s wipg卜5 趣韧_漩墩令011^刼1^1〇。|^1衾 shoo^ ^ 穿 § § § § s ^ ^ ΒΗ ΒΒ § S (01/痛踩«!)^踩赠^》^雄 ^s£$ Ξ ^ PP llcd扣 I103B I 茺 I 袅--茗 I HB I BICT3I 茺 I BB I s I (2/碱踩赠)±1、踩«!^》^^ Ξ\Ξ Ξέ 趣劫蜮癍哲七3^«/^0。^1衾 6cn 〔1&lt;〕 ss §ss (α)ί#:φ^ s^s &lt;激 09L90U6 200844203 【圖式簡單說明】 圖1係不意性表示本發明之半導體用黏著薄膜之紧 應變量與時間之關係的圖。 對切 圖2係表示實施形態中之半導體裝置之構成的剖面圖。 圖3係製造實施形態中之半導體裝置之流程圖。 圖4係表示實施形態中之半導㈣置之構成的剖面圖。 【主要兀件符號說明】 100 、 200 半導體裝置 101 ^ 133 佈線基板 103 第1半導體用黏著薄膜 105 第1半導體元件 107 第2半導體用黏著薄膜 109 第2半導體元件 111 第3半導體用黏著薄膜 113 第3半導體元件 115 第4半導體用黏著薄膜 117 第4半導體元件 119 第5半導體用黏著薄膜 121 弟5半導體元件 123 外部連接電極 125 金屬線 127 、 129 打線接合用電極 131 密封材 135 具切割片功能之黏著薄膜 97106760 200844203 137 半導體元件 139 密封樹脂 97106760 41

Claims (1)

  1. 200844203 十、申請專利範園： 1. -種半導則黏㈣膜，係積層有2段以上半導體元 件者，其特徵在於， 包含⑷（F基）两烯酸酯共聚物、以及⑻與（甲基）丙婦 酸酯共聚物不同之熱塑性樹脂；並且， 上述半導體用黏著薄膜於將使用直徑為2〇職之平行 、以^ &amp;之頻率、施加3_以之剪應 產生的剪切應變量設為r之情況下，自測定開始 刀、’里至2小時為止係滿足下述式（j): 〇· 10$ r S 0· 30 ⑴。 2.如申請專利範圍第j項之半導體用黏著薄膜，其實質 上不含熱硬化性樹脂。 、 卜3十中請專利範圍第1項之半導體用黏著薄膜，其中， 氧1Γ。與（甲基）丙婦酸酉旨共聚物不同之熱塑性樹脂係苯 上4f=請專利範圍第1項之半導體用黏著薄膜，其中， 位二U)(甲基）丙烯酸醋共聚物包含具有㈣之單體單 相=申請專利範圍第1項之半導體用黏著薄膜，其中， 述⑻盘m 基）丙埽酸酉旨共聚物，上 量為酸醋共聚物不同之熱塑性樹脂之添加 里馮0.5重置份以上且3〇重量份以下。 進6而專範圍第1項之半導體用黏著薄膜，其中， 延而含有（C)無機填充劑。 97106760 42 200844203 7&quot;如^請專利範圍第6項之半導體用黏著薄膜，豆中， 上述（C)無機填充劑為二氧化矽。 、八 二t= = 6或7.項之半導趙用黏著薄膜，其 έ .,, ' 里知之上述（C)無機填充劑以外之樹脂 ;组成物，上述(Ο無機填充劑之添加量 100重量份以下。 π D更里伤以上且 • 請專利範圍第1項之半導體用黏著薄膜，盆中， 進而含有（D)偶合劑。 /、T 二7:〗1利範圍第9項之半導體用黏著薄膜，其 含量ΐ::會量份之樹脂組成物，上述⑻偶合劑之 S里為0.01重量份以上且10重量份以下。 如申請專利_ i項之半導體用黏著薄膜，並 甲’上述半導體用黏著薄膜具有切割片功能。 /、 第1二—之種半半二體展置’其特徵在於’使用申請專利範圍 'Λ由 黏著薄膜，將半導體元件積層2段以上。 中，上==利範圍第2項之半導體用黏著薄膜，其 係苯氧樹月旨 基）丙稀酸酉旨共聚物不同之熱塑性樹脂 中“:心’：二第2項之半導體用黏著薄膜，其 物，上、1伤之上述（A)(曱基）丙烯酸醋共聚 之添力二05(:ί)丙烯酸酯共聚物不同之熱塑性樹脂 為〇· 5重1份以上且30重量份以下。 中=⑹範圍第3項之半導體用黏著薄膜，其 ^ (甲基）丙烯酸酯共聚物含有具有羧基之單體 97106760 43 200844203 車位。 16如申請專利範圍第3項之半導體用黏著薄膜，其 ，目對於1GG重量份之上述（以？基） &quot;、、里為0. 5重量份以上且30重量份以下。 广如申請專利範圍帛4項之半導 中，相對於100重量份之上述⑴π们者/專艇其 物，卜、里切之上述（A)(甲基）丙烯酸酯共聚 之夭力：1〇基)丙稀酸醋共聚物不同之熱塑性樹脂 外、口里為0.5重量份以上且3〇重量份以下。 18. —種半導體裝置，其特徵在於 第3項之丰遙栌田私—— 用甲明專利粑圍 之+ ¥體用黏者溥膜，將半導體元件積層2段以上。 第項導/裝置’其特徵在於’使用申請專利範圍 20= f著薄膜，將半導體元件積層2段以上。 第5 .g 、/、體裝置’其特徵在於’使用申請專利範圍 2广之:丄導體用黏著薄膜’將半導體元件積層2段以上。 第6馆半導體裝置’其特徵在於，使用申請專利範圍 22、-之種體用黏著薄膜，將半導體元件積層2段以上。 第7項之半導在於’使心請專利範圍 弟7貝之+導體用黏著薄膜，將半導體元件積層^以上。 23· —種半導體裝置，i 第8項之半導-用對一广…在 使用申請專利範圍 24 賴，將半導體元件積層2段以上。 »。.種+ ¥脰裝置，其特徵在於，使用申往專利r· η 弟9項之半導體用黏著薄膜，將轉贼1 %專利轨圍 25.-種半導體裝置二牛積層2段以上。 罝/、特谜在於，使用申請專利範圍 97106760 44 r 200844203 第1 0項之半導體用黏著薄膜，將半導體元件積層2段以 上。 26. —種半導體裝置，其特徵在於，使用申請專利範圍 第11項之半導體用黏著薄膜，將半導體元件積層2段以 97106760 45
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