CN103124778B - 用于制备半导体的粘合剂组合物及薄膜 - Google Patents

用于制备半导体的粘合剂组合物及薄膜 Download PDF

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CN103124778B
CN103124778B CN201080069341.4A CN201080069341A CN103124778B CN 103124778 B CN103124778 B CN 103124778B CN 201080069341 A CN201080069341 A CN 201080069341A CN 103124778 B CN103124778 B CN 103124778B
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semi
binder composition
film
preparation
conductor
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CN103124778A (zh
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金镇源
金成洙
申光浩
赵庆南
黄教圣
丁畅范
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KCC Corp
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KCC Corp
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Abstract

本发明涉及一种用于制备半导体的粘合剂组合物及薄膜，更详细地涉及一种用于制备半导体的粘合剂组合物及包含该组合物涂布层的用于制备半导体的粘附薄膜，所述用于制备半导体粘合剂的组合物包含含有丙烯腈的丙烯酸树脂、环氧化合物和酚醛树脂的混合物及填料，在半导体制备工序中，所述组合物具有优异的晶片拾取（Pick up）工序特性，并且对晶片、引线框和印刷线路板基板的粘合力优异。

Description

用于制备半导体的粘合剂组合物及薄膜
技术领域
本发明涉及一种用于制备半导体的粘合剂组合物及薄膜，更详细地涉及一种用于制备半导体的粘合剂组合物及包含该组合物涂布层的用于制备半导体的粘合薄膜，所述用于制备半导体粘合剂的组合物包含含有丙烯腈的丙烯酸树脂、环氧化合物和酚醛树脂的混合物及填料，在半导体制备工序中，所述组合物具有优异的晶片拾取（Pick up）工序特性，并且对晶片、引线框和印刷线路板基板（PCB Substrate）的粘合力优异。
背景技术
在半导体制备工序中，粘合剂作为将晶片切割成芯片，再将每个芯片焊接在引线框或软性线路板上的工序材料，虽然在单层芯片封装中使用液体状的粘合剂，但由于半导体制备工序的高度集成化，使用多层芯片层压技术的半导体装配封装占有很大部分。由于在这种多层芯片层压封装上使用液状粘合剂，会使工序难以操作，对于多层芯片层压封装，以薄膜形式使用粘合剂。在蚀刻有电路的晶片的磨削工序后，使用层压机应用这种薄膜状的粘合剂，通过热量发挥其粘合力。其结果为所述粘合剂不同于液状粘合剂，通过以下工序能够层压多层芯片。所述工序包括切割工序，将附着有粘合薄膜的薄膜的晶片切割为芯片；扩张及拾取（pick-up）工序，将切割好的芯片重组为一个个芯片；焊接工序，将拾取工序中重组的芯片装配在基板上。然后实施以下工序,其包括金属接线工序，将通过上述方式层压的芯片和基板进行电气连接；以及环氧成型（molding）工序，用于保护芯片。在如上所述的工序中，将晶片切割制备成芯片形状后，为了用于之后的工序中，将使用粘合薄膜。
将制备好的芯片附着在基板上的常规方法有以下方法，即，将液状环氧树脂组合物以一定形状涂布在准备好的引线框或软性线路板（FPCB）上，使用用于保护晶片的粘附片材，装配预先加工好的经过重组的芯片。但是涂布液状环氧树脂组合物的工序难以控制涂布厚度的均匀性，附着芯片时施加的压力容易导致渗漏等。虽然通过调节液状粘合剂组合物的触变指数能够控制其流动性，但难以应用在多层芯片的制备中，因此只局限在单一芯片的制备上。
为了解决上述液状粘合剂所产生的问题，人们提出了将液状粘合剂重组为合适的树脂组合物，提供一种薄片状粘合剂的方法。所述薄片状粘合剂的使用方法如下:薄片状粘合剂被制备成与芯片相类似大小的沟纹（rill）状后，将该粘合薄片切割成芯片大小，使用能够焊接的特殊设备进行切割，并附着在基板上后，附着重组后的芯片。但是，这种工序需要用于切割粘合薄片并进行附着的特殊设备，还需要实施附加工序，，因此其越来越不被利用。
在现有的半导体芯片附着工序中，将粘合薄片预先附着在晶片的背面来进行切割工序，再将芯片焊接在引线框或软性线路板上。在这种焊接工序中，粘合薄膜要具有优异的粘附力，需要在切割工序前，使粘合薄膜与晶片层压时不产生气泡，并且不会因切割工序中所使用的加工用水及洗涤用水和空气而使得粘合薄膜和晶片的背面或切割薄膜之间发生脱层或浸水。此外，在拾取工序中，切割工序中分离的芯片要容易地从切割薄膜中被拾取，在焊接工序中，要对芯片和引线框或软性线路板表现出优异的粘合力。
在要求高处理速度和高端内存的产品的情况下，在半导体芯片制备工序中，芯片与软性线路板之间的用于芯片焊接的粘合薄膜需要具有很好的粘合力。如果在软性线路板和芯片焊接中没有表现出充分的粘合力，则在芯片制备工序中，芯片会从软性线路板上脱离。
韩国授权专利第10-0826420号公开有一种粘合薄膜组合物，该组合物中使用了在主链上具有双键的橡胶类树脂。但是，如该专利的组合物，在树脂的主链上存在双键的情况下，反而会因双键的交联而导致对软性线路板的粘合力降低。
韩国授权专利第10-0447014号公开有一种粘合薄膜，该薄膜中使用了具有高耐热性的聚酰亚胺类粘合剂组合物。但是，该专利的组合物虽然耐热性高，但粘合力低。
发明内容
要解决的技术问题
本发明的目的在于解决上述现有技术中存在的问题，并以提供一种用于制备半导体的粘合剂组合物及包含该组合物涂布层的用于制备半导体的粘合薄膜为技术问题。本发明提供的用于制备半导体的粘附薄膜在半导体制备工序中，具有优异的晶片拾取工序特性，对晶片、引线框、PCB基板的粘合力优异。
技术方案
为了实现上述目的，本发明提供一种用于制备半导体的粘合剂组合物，其包含：15～75重量份的丙烯酸树脂，所述丙烯酸树脂含有15～40重量%的丙烯腈单体单元；5～60重量份的环氧化合物和酚醛树脂的混合物；及10～80重量份的填料。
根据本发明的另一个面，提供一种用于制备半导体的粘合薄膜，其特征在于，其包含本发明的粘合剂组合物的涂布层。
有益效果
在半导体制备工序中使用本发明的粘合剂组合物及粘合薄膜，在进行与晶片的层压时，对晶片具有优异的附着力（attachment）和粘附力（cohesion），能够从切割薄膜获得优异的拾取特性，在焊接工序中具有优异的粘合力（adhesion），从而能够提高半导体封装制备工序的操作性和半导体产品的可靠性。
附图说明
图1是表示在晶片上应用本发明的粘合薄膜状态的一个具体例的概略图。
图2是表示本发明粘附薄膜的一个具体例的层结构的概略图（上侧）及在即将使用之前去除释放薄膜状态的概略图（下侧）。
图3是表示包含本发明的粘附薄膜的切割/芯片焊接薄膜的一个具体例层结构的概略图。
附图标记说明
1.晶片
2.粘合剂组合物涂布层
3.粘附剂层
4.基底层（释放层）
具体实施方式
下面对本发明进行详细的说明。
本发明的粘合剂组合物包含含有丙烯腈的丙烯酸树脂。该丙烯酸树脂成分，以树脂100重量%计，含有15～40重量%的丙烯腈单体单元，更优选含有20～40重量%的丙烯腈单体单元。根据本发明的一个具体例，可以使用将15～40重量份的丙烯腈化合物和60～85重量份的丙烯酸酯化合物进行聚合反应得到的丙烯酸树脂成分。所述丙烯酸酯化合物例如有乙基丙烯酸酯或丁基丙烯酸酯。如果丙烯腈单体单元的含量小于15重量%，会降低与环氧化合物之间的相容性，如果大于40重量%，会存在树脂分子量过于急剧升高的问题。
在本发明中，含有丙烯腈的丙烯酸树脂的重均分子量优选为300,000～2,000,000，更优选为500,000～1,500,000。此外，其玻璃化转变温度优选为-20℃～50℃，更优选为0℃～40℃。丙烯酸树脂的重均分子量如果小于300,000，树脂的粘度过低，在构成粘合薄膜时过于柔软，将难以形成薄膜，如果超过2,000,000，则粘度过高，在薄膜的制备上存在困难。丙烯酸树脂的玻璃化转变温度如果小于-20℃，粘合薄膜的表面润湿性会过高，在加工薄膜时，与粘合薄膜之间的分离性会变差，如果超过50℃时，在半导体封装工序中与晶片的附着力变差，在工序上会发生粘附薄膜的分离。
在本发明的粘合剂组合物中包含15～75重量份的含有上述丙烯腈的丙烯酸树脂。在组合物中，含有丙烯腈的丙烯酸树脂的含量如果小于15重量份，在整体薄膜的物性中的涂布性能会变差，并且存在薄膜非常容易破裂的问题，相反如果大于75重量份，虽然薄膜的形成良好，但由于粘合力的不足，在半导体芯片的制备工序中，可靠性会变差。
本发明的粘合剂组合物包含环氧化合物和酚醛树脂的混合物。
在本发明中可以使用的环氧化合物可以例举通常公知的双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、脂环式环氧树脂、链状脂肪族环氧树脂、苯酚酚醛型环氧树脂、甲酚醛环氧树脂、双酚A甲醛酚醛环氧树脂、双酚缩水甘油醚化合物、萘二酚缩水甘油醚化合物、酚类缩水甘油醚化合物、醇类缩水甘油醚化合物及它们的烷基取代物、卤化物或氢化物、多官能环氧树脂、含杂环的环氧树脂等，可以将其单独地或2种以上组合使用。更具体地，可以例举出市售的EPICOAT807、EPICOAT815、EPICOAT825、EPICOAT827、EPICOAT828、EPICOAT834、EPICOAT1001、EPICOAT1002、EPICOAT1003、EPICOAT1055、EPICOAT1004、EPICOAT1004AF、EPICOAT1007、EPICOAT1009、EPICOAT1003F、EPICOAT1004F（以上为日本环氧树脂株式会社制，商品名）、YD-011、YD-012、YD-013K、YD-014、YD-017、YD-112、YD-113、YD-114、YD-115、YD-127、YD-128（以上为国都化学株式会社（Kuk-do Chemical Co.,Ltd.）制，商品名）、SE-187、SE-187P（以上为新华（Shin-wha）T&C公司制，商品名）等双酚A型环氧树脂、YDF-161、YDF-162、YDF-170（国都化学株式会社制，商品名）、SE-187、SE-187P（以上为新华T&C公司.制，商品名）等双酚F型环氧树脂、EPPN-201、EPPN-501、EPPN-501HY、EPPN-502（以上为日本化药株式会社制，商品名）、YDPN-631、YDPN-636、YDPN-638（以上为（国都化学株式会社制，商品名）等苯酚酚醛型环氧树脂、YDCN-500-1P、YDCN-500-4P、YDCN-500-5P、YDCN-500-7P、YDCN-500-10P、YDCN-500-80P（以上为（国都化学株式会社制，商品名）、EOCN-102S、EOCN-103S、EOCN-104S、EOCN-1012、EOCN-1020、EOCN-1025、EOCN-1027（以上为日本化药株式会社制，商品名）等甲酚醛型环氧树脂等，可以将其单独地或2种以上组合使用。
对本发明中可以使用的酚醛树脂没有特别的限制，优选羟基当量为100eq/kg～300eq/kg的酚醛树脂。
上述环氧化合物和酚醛树脂的混合物中的两者的混合比如下。环氧化合物中的环氧当量：酚醛树脂中的羟基当量优选为1:0.8～1:1.2。如果该混合比超出上述范围，则由于环氧-酚醛固化系统的不足，将导致过度固化或未固化，从而在半导体制备工序后在可靠性评估上存在问题。
在本发明的粘合剂组合物中包含5～60重量份的环氧树脂化合物和酚醛树脂的混合物。当组合物中的环氧树脂化合物和酚醛树脂的混合物的含量小于5重量份时，在高温中的固化物的物性变弱，在长期使用上会存在问题，相反大于60重量份时，薄膜会过于坚硬，在薄膜上的涂布存在困难。
本发明的粘合剂组合物包含填料。作为填料可以使用与上述丙烯酸树脂成分的可混合性低的环氧类高分子化合物、球状或块状的粒子等。
与丙烯酸树脂成分的可混合性低的环氧类高分子化合物，虽然优选重均分子量为50,000以上的环氧类高分子化合物，但并不特别限定于此。根据本发明的一个具体例，双酚A型、F型或A型与F型的混合物可用作环氧类高分子填料，其重均分子量为10,000～100,000。
作为粒状的填料可以例举如二氧化硅（例如，熔融二氧化硅、干式二氧化硅）、氧化铝（例如，球状、角状、板状或薄片状氧化铝）、银、镀金珠、硅珠、炭黑、氢氧化铝、氢氧化镁、氮化硼、二氧化钛、陶瓷等粒子。粒子状填料的平均粒子大小优选为10nm～10μm，更优选为20nm～5μm。粒子状的填料可以使用具有球状或粒子块状形态的填料。根据本发明的一个实施例，在氧化铝的情况下，可以使用以1:3～1:6的重量比混合球状：角状的氧化铝。
在本发明的粘合剂组合物中包含10～80重量份的填料。如果组合物中的填料的含量小于10重量份，会存在粘合剂的强度降低的问题，相反如果大于80重量份，会降低与粘附薄膜之间的粘着力，从而存在工序操作性降低的问题。
在本发明的粘合剂组合物中，除了上述成分以外，还可以进一步包含适量的半导体工序粘合剂组合物通常所使用的成分，例如，丙酮、甲乙酮、甲苯、乙酸乙酯等溶剂。
对本发明的粘合剂组合物的制备方法并无特别的限制，可以使用通常的用于制备粘合剂组合物的设备，由通常的工序制备。根据本发明的一个具体例，可以使用玻珠研磨机等混合设备，在室温至适当升温的温度下，对以上进行说明的含有丙烯腈的丙烯酸树脂、环氧化合物、酚醛树脂、填料及溶剂等其它成分进行分散及混合，从而制备本发明的粘合剂组合物。
根据本发明的另一个面，提供一种用于制备半导体的粘合薄膜，其特征在于，其包含以上说明的本发明的粘合剂组合物的涂布层。
根据本发明的用于制备半导体的粘合薄膜，其特征在于，其包含上述本发明的粘合剂组合物的涂布层，此外根据薄膜结构上的需要可以进一步包含一个以上的基底（薄膜）层（也被称为释放（薄膜）层或保护（薄膜）层）及粘附（薄膜）层。根据本发明的一个具体例的用于制备半导体的粘合薄膜可以具有粘合剂组合物层+粘附层；基底层+粘合剂组合物层+基底层；粘合剂组合物层+基底层；基底层+粘合剂组合物层+粘附层等的层结构，但不限定于此。
对于能够包含在本发明的用于制备半导体的粘合薄膜的基底层材质，并无特别的限制，可以使用制备半导体的粘合薄膜的基底薄膜时通常使用的物质，例如聚对苯二甲酸乙二醇酯、聚烯烃系类聚氯乙烯类物质等。此外，作为粘附层，可以使用制备半导体粘合薄膜时通常使用的粘附性物质，例如有包括光敏低聚物的丙烯酸类物质。
在本发明的用于制备半导体的粘合薄膜中，对于上述粘合剂组合物的涂布层的厚度并无特别限制，一般情况下在5～300μm的范围内，可根据具体的层的结构而有所不同。例如，粘合剂组合物的涂布层的厚度，在与粘附层一起构成的情况下，可以为5～80μm的范围，在两个基底层之间构成的情况下，可以为20～100μm的范围，在与1个基底层一起构成的情况下，可以为40～300μm的范围，但并不限定于此。
对于本发明的粘合薄膜的制备方法并无特别的限制，可以使用通常的用于制备多层粘合薄膜的设备，由通常的工序制备。根据本发明的一个具体例，将本发明的粘合剂组合物涂布在聚对苯二甲酸乙二醇酯材质的基底层上后，将其根据需要与涂布有丙烯酸粘附剂的粘附薄膜贴合，从而制备本发明的粘合薄膜。
下面，通过实施例对本发明进行较为详细的说明。但是，这些实施例只是为了帮助理解本发明，本发明的范围并不限定于这些实施例。
在下面的实施例中，通过下述方法实施对粘合薄膜的物理性质评价。
对粘合力的评价
为了测定本发明的实施例及比较例中制备的粘合薄膜的粘合力，根据JISZ0237标准及KSA1107标准，使用万能试验机进行180°剥离强度试验。
对于照射紫外线后的剥离强度，通过使用紫外线照射装置以150mJ/cm2照射80mW/cm2强度的紫外线后，在常温下放置20分钟，进行180°剥离强度试验。
对晶片和粘合薄膜空隙的确认
使用胶带安装设备（tape mounting device）（DT-MWM1230A，Dynatech Co.,Ltd.），在65℃温度下，通过辊状的杆碾轧本发明实施例中制备的粘合薄膜，从而确认晶片和粘合薄膜之间是否存在空隙。
对碎片（Chipping）及芯片分散（flying）的评价
将制备的粘合薄膜附着在8英寸的200μm的晶片上，之后使用切割装置（Disco公司,DFD6361）实施切割及洗涤工序后，用肉眼及光学显微镜进行观察。切割工序在芯片大小×10mm、进料速度为70mm/s、叶片高度为70μm、叶片转数为30,000rpm的条件下实施，洗涤工序在晶片旋转期间通过喷射超纯水和压缩空气来实施，从而记录芯片边角损伤的不良的碎片（chipping）和芯片飞散的个数。
对拾取特性的评价
使用紫外线照射装置，以150mJ/cm2的量对完成切割及洗涤工序的晶片进行照射后，在常温下放置20分钟，使用管芯连接装置（die-attaching device）（Secron公司,SDB-30US）评价拾取特性。将拾取工序的条件设定成芯片大小为10mm×10mm、插针个数为10个、扩增5mm，在针行程200μm～800μm的范围内，对晶片中央部的100个插针实施拾取工序，将在任意的针行程中，通过一次的拾取工序将所有的插针拾取的情况评价为○、通过2～3次的拾取工序将所有的插针拾取的情况评价为△，将需要其以上拾取工序的情况评价为X。
实施例1～实施例3
如表1中所示，使用玻珠研磨机，将60重量份的调整丙烯腈（AN）单体单元含量而制备的丙烯酸高分子树脂CS-200（Tae-wha股份有限公司制造的商品）、20重量份（10重量份的环氧树脂+10重量份的酚醛树脂）的环氧树脂YDCN-500-4P（国都化学株式会社，商品名，环氧当量为200，软化点62℃）和酚醛树脂MEH-7800SS（Meiwha股份有限公司制,羟基当量为175）的混合物，以及20重量份的作为填料的块状粒子的二氧化硅，分散在20重量份的甲乙酮溶剂中，之后在38μm厚度的聚对苯二甲酸乙二醇酯释放薄膜上，以20μm的干燥厚度进行涂布，从而制备粘合薄膜。
将制得的粘合薄膜与100μm厚度的聚烯烃薄膜进行贴合，所述聚烯烃薄膜以10μm厚度涂布有包含光敏低聚物的丙烯酸粘附剂。使用贴合的薄膜对200μm的晶片实施附着评价，将其结果表示在表5中。
表1
实施例4～实施例8
使用丙烯酸高分子CS-200树脂，所述丙烯酸高分子CS-200树脂的丙烯腈单体单元的含量为20重量%，玻璃化转变温度为10℃，分子量为900,000；使用实施例1～3中所使用的环氧/酚醛树脂混合物；使用平均粒径为20nm的煅制氧化硅（Degussa公司制，商品名为R-972）作为填料；它们的用量如表2所示。采用与实施例1～3相同的方法制备粘合薄膜。采用与实施例1～3相同的方法对粘合薄膜进行评价，将其结果表示在表5中。
表2（单位：重量份）
实施例4 实施例5 实施例6 实施例7 实施例8
丙烯酸树脂 20 30 50 65 75
环氧/酚醛树脂混合物 60 50 30 15 5
填料 20 20 20 20 20
实施例9～实施例15
使用丙烯酸高分子CS-200树脂，所述丙烯酸高分子CS-200树脂的丙烯腈单体单元的含量为20重量%，玻璃化转变温度为10℃，分子量为900,000；使用实施例1～3中所使用的环氧/酚醛树脂混合物；及多种填料；它们的用量如表3所示。采用与实施例1～3相同的方法制备粘合薄膜。采用与实施例1～3相同的方法对粘合薄膜进行评价，将其结果表示在表6中。
表3（单位：重量份）
*：二氧化硅（平均粒径为1.2μm的熔融二氧化硅（Datsumori公司制，商品名SO-31R））
**：高分子量环氧（苯氧基树脂）（国都化学株式会社制，商品名YP-50，YP-70）
***：氧化铝（平均粒径为0.5μm的球状氧化铝（Denka制，商品名ASFP-20）：平均粒径为1μm的角状氧化铝（昭和电工株式会社（Showa Denko Co.,Ltd.）制，商品名A-43-M））的重量比为1:5的混合物）
****：银（平均粒径为1～5μm的银薄片（Konatec公司制，KSDF-50300）
比较例1～6
使用如下表4所示的丙烯酸高分子CS-200树脂、实施例1～3所使用的环氧/酚醛树脂混合物及填料，采用与实施例1～3相同的方法制备粘合薄膜。采用与实施例1～3相同的方法对粘合薄膜进行评价，将其结果表示在表7中。
表4（用量单位：重量份）
表5
粘合力：在用紫外线照射之前的粘合剂组合物层和粘附剂层之间的粘合力
剥离强度*：用紫外线照射后的粘合剂组合物层和粘附剂层之间的粘合力
粘合力**：晶片（Wafer）和粘合薄膜之间的粘合力
粘合力***：软性线路板和粘合薄膜之间的粘合力
表6
粘合力：用紫外线照射之前的粘合剂组合物层和粘附剂层之间的粘合力
剥离强度*：用紫外线照射后的粘合剂组合物层和粘附剂层之间的粘合力
粘合力**：晶片（Wafer）和粘合薄膜之间的粘合力
粘合力***：软性线路板和粘合薄膜之间的粘合力
表7
粘合力：用紫外线照射之前的粘合剂组合物层和粘附剂层之间的粘合力
剥离强度*：用紫外线照射后的粘合剂组合物层和粘附剂层之间的粘合力
粘合力**：晶片（Wafer）和粘附薄膜之间的粘合力
粘合力***：软性线路板和粘附薄膜之间的粘合力
从如上所述的评价结果可知，根据本发明，晶片和软性线路板之间的粘着力得到提高，从而防止在切割晶片工序时发生的芯片损伤，能够得到拾取性优异的粘合薄膜。

Claims (9)

1.一种在半导体制备中用于晶片拾取工序的粘合剂组合物，其包含：15～75重量份的丙烯酸树脂，所述丙烯酸树脂含有15～40重量％的丙烯腈单体单元；5～60重量份的环氧化合物和酚醛树脂的混合物；及10～80重量份的填料；所述含有丙烯腈单元的丙烯酸树脂的重均分子量为500,000～1,500,000；酚醛树脂的羟基当量为100eq/kg～300eq/kg；环氧化合物中的环氧当量：酚醛树脂中的羟基当量为1:0.8～1:1.2。
2.根据权利要求1所述的在半导体制备中用于晶片拾取工序的粘合剂组合物，其特征在于，含有丙烯腈单元的丙烯酸树脂的玻璃化转变温度为-20℃～50℃。
3.根据权利要求1所述的在半导体制备中用于晶片拾取工序的粘合剂组合物，其特征在于，环氧化合物为脂环式环氧树脂、链状脂肪族环氧树脂、苯酚酚醛型环氧树脂、甲酚醛环氧树脂、双酚A甲醛酚醛环氧树脂、酚类缩水甘油醚化合物、醇类缩水甘油醚化合物及它们的烷基取代物、卤化物或氢化物、多官能环氧树脂、含杂环的环氧树脂或它们的混合物。
4.根据权利要求1所述的在半导体制备中用于晶片拾取工序的粘合剂组合物，其特征在于，环氧化合物为萘二酚缩水甘油醚化合物。
5.根据权利要求3所述的在半导体制备中用于晶片拾取工序的粘合剂组合物，其特征在于，所述酚类缩水甘油醚化合物为双酚缩水甘油醚化合物。
6.根据权利要求3所述的在半导体制备中用于晶片拾取工序的粘合剂组合物，其特征在于，所述酚类缩水甘油醚化合物为双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂。
7.根据权利要求1所述的在半导体制备中用于晶片拾取工序的粘合剂组合物，其特征在于，填料为环氧类高分子化合物、球状或块状形态的粒子或它们的混合物。
8.根据权利要求7所述的在半导体制备中用于晶片拾取工序的粘合剂组合物，其特征在于，粒子为二氧化硅、氧化铝、银、镀金珠、硅珠、炭黑、氢氧化铝、氢氧化镁、氮化硼、二氧化钛、陶瓷或它们的混合物。
9.一种用于制备半导体的粘合薄膜，其特征在于，其包含权利要求1～8中任一项所述的在半导体制备中用于晶片拾取工序的粘合剂组合物的涂布层。
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